Integrated Synthesizer and VCO
ADF4360-5
FEATURES
GENERAL DESCRIPTION
Output frequency range: 1200 MHz to 1400 MHz
Divide-by-2 output
3.0 V to 3.6 V power supply
1.8 V logic compatibility
Integer-N synthesizer
Programmable dual-modulus prescaler 8/9, 16/17, 32/33
Programmable output power level
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
The ADF4360-5 is a fully integrated integer-N synthesizer
and voltage-controlled oscillator (VCO). The ADF4360-5 is
designed for a center frequency of 1300 MHz. In addition, a
divide-by-2 option is available, whereby the user gets an RF
output of between 600 MHz and 700 MHz.
Control of all the on-chip registers is through a simple 3-wire
interface. The device operates with a power supply ranging from
3.0 V to 3.6 V and can be powered down when not in use.
APPLICATIONS
Wireless handsets (DECT, GSM, PCS, DCS, WCDMA)
Test equipment
Wireless LANs
CATV equipment
FUNCTIONAL BLOCK DIAGRAM
AVDD
DVDD
CE
RSET
ADF4360-5
MUXOUT
MULTIPLEXER
14-BIT R
COUNTER
REFIN
LOCK
DETECT
CLK
DATA
MUTE
24-BIT
FUNCTION
LATCH
24-BIT
DATA REGISTER
LE
CHARGE
PUMP
CP
PHASE
COMPARATOR
VVCO
VTUNE
CC
CN
INTEGER
REGISTER
RFOUTA
VCO
CORE
13-BIT B
COUNTER
5-BIT A
COUNTER
MULTIPLEXER
N = (BP + A)
RFOUTB
LOAD
LOAD
AGND
DGND
DIVSEL = 1
DIVSEL = 2
÷2
04439-001
PRESCALER
P/P+1
OUTPUT
STAGE
CPGND
Figure 1.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADF4360-5
TABLE OF CONTENTS
Specifications..................................................................................... 3
VCO ............................................................................................. 10
Timing Characteristics..................................................................... 5
Output Stage................................................................................ 11
Absolute Maximum Ratings............................................................ 6
Latch Structure ........................................................................... 12
Transistor Count........................................................................... 6
Power-Up..................................................................................... 16
ESD Caution.................................................................................. 6
Control Latch .............................................................................. 18
Pin Configuration and Function Descriptions............................. 7
N Counter Latch......................................................................... 19
Typical Performance Characteristics ............................................. 8
R Counter Latch ......................................................................... 19
Circuit Description........................................................................... 9
Applications..................................................................................... 20
Reference Input Section............................................................... 9
Direct Conversion Modulator .................................................. 20
Prescaler (P/P + 1)........................................................................ 9
Fixed Frequency LO................................................................... 21
A and B Counters ......................................................................... 9
Interfacing ................................................................................... 21
R Counter ...................................................................................... 9
PCB Design Guidelines for Chip Scale Package........................... 22
PFD and Charge Pump................................................................ 9
Output Matching ........................................................................ 22
MUXOUT and Lock Detect...................................................... 10
Outline Dimensions ....................................................................... 23
Input Shift Register..................................................................... 10
Ordering Guide .......................................................................... 23
REVISION HISTORY
12/04—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Specifications ................................................................ 3
Changes to Timing Characteristics ................................................ 5
Changes to Power-Up Section ...................................................... 16
Added Table 10 ............................................................................... 16
Added Figure 16.............................................................................. 16
Changes to Ordering Guide .......................................................... 23
Updated Outline Dimensions ....................................................... 23
11/03—Revision 0: Initial Version
Rev. A | Page 2 of 24
ADF4360-5
SPECIFICATIONS1
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter
REFIN CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency2
CHARGE PUMP
ICP Sink/Source3
High Value
Low Value
RSET Range
ICP Three-State Leakage Current
Sink and Source Current Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
VINH, Input High Voltage
VINL, Input Low Voltage
IINH/IINL, Input Current
CIN, Input Capacitance
LOGIC OUTPUTS
VOH, Output High Voltage
IOH, Output High Current
VOL, Output Low Voltage
POWER SUPPLIES
AVDD
DVDD
VVCO
AIDD4
DIDD4
IVCO4, 5
IRFOUT4
Low Power Sleep Mode4
RF OUTPUT CHARACTERISTICS5
VCO Output Frequency
VCO Sensitivity
Lock Time6
Frequency Pushing (Open-Loop)
Frequency Pulling (Open-Loop)
Harmonic Content (Second)
Harmonic Content (Third)
Output Power5, 7
Output Power Variation
VCO Tuning Range
B Version
Unit
Conditions/Comments
10/250
MHz min/max
0.7/AVDD
0 to AVDD
5.0
±100
V p-p min/max
V max
pF max
µA max
For f < 10 MHz, use a dc-coupled CMOS-compatible
square wave, slew rate > 21 V/µs.
AC-coupled.
CMOS-compatible.
8
MHz max
2.5
0.312
2.7/10
0.2
2
1.5
2
mA typ
mA typ
kΩ
nA typ
% typ
% typ
% typ
1.5
0.6
±1
3.0
V min
V max
µA max
pF max
DVDD – 0.4
500
0.4
V min
µA max
V max
3.0/3.6
AVDD
AVDD
10
2.5
19.0
3.5 to 11.0
7
V min/V max
1200/1400
31
400
6
15
−13
−19
−13.5/−4.5
±3
1.25/2.5
MHz min/max
MHz/V typ
µs typ
MHz/V typ
kHz typ
dBc typ
dBc typ
dBm typ
dB typ
V min/max
With RSET = 4.7 kΩ.
mA typ
mA typ
mA typ
mA typ
µA typ
Rev. A | Page 3 of 24
1.25 V ≤ VCP ≤ 2.5 V.
1.25 V ≤ VCP ≤ 2.5 V.
VCP = 2.0 V.
CMOS output chosen.
IOL = 500 µA.
ICORE = 10 mA.
RF output stage is programmable.
ICORE = 10 mA.
To within 10 Hz of final frequency.
Into 2.00 VSWR load.
Programmable in 3 dB steps. See Table 7.
For tuned loads, see the Output Matching section.
ADF4360-5
Parameter
NOISE CHARACTERISTICS5
VCO Phase-Noise Performance8
Synthesizer Phase-Noise Floor9
In-Band Phase Noise10, 11
RMS Integrated Phase Error12
Spurious Signals due to PFD Frequency11, 13
Level of Unlocked Signal with MTLD Enabled
B Version
Unit
Conditions/Comments
−110
−133
−141
−146
−172
−163
−147
−87
0.46
−65
−45
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
Degrees typ
dBc typ
dBm typ
@ 100 kHz offset from carrier.
@ 1 MHz offset from carrier.
@ 3 MHz offset from carrier.
@ 10 MHz offset from carrier.
@ 25 kHz PFD frequency.
@ 200 kHz PFD frequency.
@ 8 MHz PFD frequency.
@ 1 kHz offset from carrier.
100 Hz to 100 kHz.
1
Operating temperature range is –40°C to +85°C.
Guaranteed by design. Sample tested to ensure compliance.
3
ICP is internally modified to maintain constant loop gain over the frequency range.
4
TA = 25°C; AVDD = DVDD = VVCO = 3.3 V; P = 32.
5
These characteristics are guaranteed for VCO core power = 10 mA.
6
Jumping from 1.15 GHz to 1.40 GHz. PFD frequency = 200 kHz; loop bandwidth = 10 kHz.
7
Using 50 Ω resistors to VVCO into a 50 Ω load. For tuned loads, see the Output Matching section.
8
The noise of the VCO is measured in open-loop conditions.
9
The synthesizer phase-noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider value).
10
The phase noise is measured with the EVAL-ADF4360-xEB1 Evaluation Board and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the REFIN for the
synthesizer; offset frequency = 1 kHz.
11
fREFIN = 10 MHz; fPFD = 200 kHz; N = 6500; Loop B/W = 10 kHz.
12
fREFIN = 10 MHz; fPFD = 1 MHz; N = 1300; Loop B/W = 25 kHz.
13
The spurious signals are measured with the EVAL-ADF4360-xEB1 Evaluation Board and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the REFIN for
the synthesizer; fREFOUT = 10 MHz @ 0 dBm.
2
Rev. A | Page 4 of 24
ADF4360-5
TIMING CHARACTERISTICS1
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; 1.8 V and 3 V logic levels used; TA = TMIN to TMAX, unless otherwise noted
Table 2.
Parameter
t1
t2
t3
t4
t5
t6
t7
Unit
ns min
ns min
ns min
ns min
ns min
ns min
ns min
Test Conditions/Comments
LE Setup Time
DATA to CLOCK Setup Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Setup Time
LE Pulse Width
See the Power-Up section for the recommended power-up procedure for this device.
t4
t5
CLOCK
t2
DATA
DB23 (MSB)
t3
DB22
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t7
LE
t1
t6
04439-002
1
Limit at TMIN to TMAX (B Version)
20
10
10
25
25
10
20
LE
Figure 2. Timing Diagram
Rev. A | Page 5 of 24
ADF4360-5
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VVCO to GND
VVCO to AVDD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN to GND
Operating Temperature Range
Maximum Junction Temperature
CSP θJA Thermal Impedance
Paddle Soldered
Paddle Not Soldered
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
150°C
50°C/W
88°C/W
215°C
220°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any
other conditions above those included in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of
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