ADG636

厂商：
AD(亚德诺)
封装：
描述：
ADG636 - 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch - Analog Devices

数据手册：

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数据手册
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ADG636 数据手册

a 1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 FEATURES 1 pC Charge Injection 2.7 V to 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: –40 C to +125 C 100 pA (Max @ 25 C) Leakage Currents 85 Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (

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