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ADG713BR-REEL7

ADG713BR-REEL7

  • 厂商:

    AD(亚德诺)

  • 封装:

    SOIC16_150MIL

  • 描述:

    QUAD SPST SWITCH

  • 数据手册
  • 价格&库存
ADG713BR-REEL7 数据手册
a CMOS Low Voltage 4 ⍀ Quad SPST Switches ADG711/ADG712/ADG713 FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance (2.5 ⍀ Typ) Low On Resistance Flatness –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 16-Lead TSSOP and SOIC Packages Fast Switching Times tON 16 ns tOFF 10 ns Typical Power Consumption (< 0.01 ␮W) TTL/CMOS Compatible APPLICATIONS USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAMS S1 IN1 IN1 D1 D1 S2 S2 IN2 IN2 D2 ADG711 ADG712 S2 D2 ADG713 S3 IN3 D3 S4 S4 IN4 D4 D2 S3 IN3 D3 IN4 D1 IN2 S3 IN3 S1 S1 IN1 D3 S4 IN4 D4 D4 SWITCHES SHOWN FOR A LOGIC "1" INPUT The ADG711/ADG712/ADG713 are available in 16-lead TSSOP and 16-lead SOIC packages. The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents, and high bandwidth. PRODUCT HIGHLIGHTS They are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. Fast switching times and high bandwidth make the parts suitable for switching USB 1.1 data signals and video signals. 2. Very Low RON (4.5 W max at 5 V, 8 W max at 3 V). At supply voltage of 1.8 V, RON is typically 35 W over the temperature range. 1. 1.8 V to 5.5 V Single-Supply Operation. The ADG711, ADG712, and ADG713 offer high performance and are fully specified and guaranteed with 3 V and 5 V supply rails. 3. Low On Resistance Flatness. The ADG711, ADG712, and ADG713 contain four independent single-pole/single-throw (SPST) switches. The ADG711 and ADG712 differ only in that the digital control logic is inverted. The ADG711 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the ADG712. The ADG713 contains two switches whose digital control logic is similar to the ADG711, while the logic is inverted on the other two switches. 4. –3 dB Bandwidth >200 MHz. Each switch conducts equally well in both directions when ON. The ADG713 exhibits break-before-make switching action. 8. 16-Lead TSSOP and 16-Lead SOIC Packages. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer (ADG713 only). REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved. (VDD = +5 V  10%, GND = 0 V. All specifications ADG711/ADG712/ADG713–SPECIFICATIONS1 –40C to +85C unless otherwise noted.) Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT(ON)) B Version –40C to +25C +85C 0 V to VDD 2.5 4 4.5 0.05 0.3 0.5 1.0 LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 11 Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = +5.5 V; VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3 ± 0.2 nA typ nA max nA typ nA max nA typ nA max 2.4 0.8 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 VS = 2 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 ± 0.2 ± 0.2 tOFF 6 Break-Before-Make Time Delay, tD (ADG713 Only) Charge Injection 6 3 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –58 –78 dB typ dB typ Channel-to-Channel Crosstalk –90 dB typ Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) 200 10 10 22 MHz typ pF typ pF typ pF typ 0.001 µA typ µA max 16 10 POWER REQUIREMENTS IDD Test Conditions/Comments 1 1.0 VDD = +5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature range: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. A 1 SPECIFICATIONS ADG711/ADG712/ADG713 (VDD = +3 V  10%, GND = 0 V. All specifications –40C to +85C unless otherwise noted.) Parameter B Version –40C to +25C +85C ANALOG SWITCH Analog Signal Range On Resistance (RON) 5 On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) 0 V to VDD 5.5 8 0.1 0.3 2.5 ± 0.01 ± 0.1 ± 0.01 ± 0.1 ± 0.01 ± 0.1 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 13 Unit V Ω typ Ω max Ω typ Ω max Ω typ VS = 0 V to VDD, IS = –10 mA VDD = +3.3 V; VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3 ± 0.2 2.0 0.4 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 2 V; Test Circuit 5 VS = 1.5 V; RS = 0 Ω, CL = 1 nF; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF, f = 10 MHz; Test Circuit 8 RL = 50 Ω, CL = 5 pF; Test Circuit 9 ± 0.2 ± 0.2 tOFF 7 Break-Before-Make Time Delay, tD (ADG713 Only) Charge Injection 7 3 ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation –58 –78 dB typ dB typ Channel-to-Channel Crosstalk –90 dB typ Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) 200 10 10 22 MHz typ pF typ pF typ pF typ 0.001 µA typ µA max 12 1 1.0 NOTES 1 Temperature range: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. A VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA nA typ nA max nA typ nA max nA typ nA max 20 POWER REQUIREMENTS IDD Test Conditions/Comments –3– VDD = +3.3 V Digital Inputs = 0 V or 3 V ADG711/ADG712/ADG713 ABSOLUTE MAXIMUM RATINGS 1 SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 520 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 125°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 42°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV (TA = +25°C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C TSSOP Package, Power Dissipation . . . . . . . . . . . . . 430 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 150°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 27°C/W NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG711/ADG712/ADG713 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ORDERING GUIDE Model ADG711BR ADG711BR-REEL ADG711BR-REEL7 ADG711BRU ADG711BRU-REEL ADG711BRU-REEL7 ADG712BR ADG712BR-REEL ADG712BR-REEL7 ADG712BRU ADG712BRU-REEL ADG712BRU-REEL7 ADG712BRUZ* ADG712BRUZ-REEL* ADG712BRUZ-REEL7* ADG713BR ADG713BR-REEL ADG713BR-REEL7 ADG713BRU ADG713BRU-REEL ADG713BRU-REEL7 Temperature Range –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C Package Description Package Option Standard Small Outline (SOIC) Standard Small Outline (SOIC) Standard Small Outline (SOIC) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Standard Small Outline (SOIC) Standard Small Outline (SOIC) Standard Small Outline (SOIC) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Standard Small Outline (SOIC) Standard Small Outline (SOIC) Standard Small Outline (SOIC) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) Thin Shrink Small Outline (TSSOP) R-16 R-16 R-16 RU-16 RU-16 RU-16 R-16 R-16 R-16 RU-16 RU-16 RU-16 RU-16 RU-16 RU-16 R-16 R-16 R-16 RU-16 RU-16 RU-16 *Z = Pb-free part. –4– REV. A ADG711/ADG712/ADG713 Table I. Truth Table (ADG711/ADG712) ADG711 In ADG712 In Switch Condition 0 1 1 0 ON OFF PIN CONFIGURATION (TSSOP/SOIC) Table II. Truth Table (ADG713) Logic Switch 1, 4 Switch 2, 3 0 1 OFF ON ON OFF IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 NC 4 GND 5 ADG711 ADG712 ADG713 13 VDD 12 NC TOP VIEW S4 6 (Not to Scale) 11 S3 D4 7 10 D3 IN4 8 9 IN3 NC = NO CONNECT TERMINOLOGY VDD Most positive power supply potential. GND S D IN RON ∆RON Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Ohmic resistance between D and S. On resistance match between any two channels, i.e., RONmax–RONmin. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source leakage current with the switch “OFF.” Drain leakage current with the switch “OFF.” Channel leakage current with the switch “ON.” Analog voltage on terminals D, S. “OFF” switch source capacitance. “OFF” switch drain capacitance. “ON” switch capacitance. Delay between applying the digital control input and the output switching on. RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) VD (VS) CS (OFF) CD (OFF) CD, CS (ON) tON REV. A tOFF tD Crosstalk Off Isolation Charge Injection Bandwidth On Response On Loss –5– Delay between applying the digital control input and the output switching off. “OFF” time or “ON” time measured between the 90% points of both switches, when switching from one address state to another. (ADG713 only). A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an “OFF” switch. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by 3 dB. The frequency response of the “ON” switch. The voltage drop across the “ON” switch, seen on the on response vs. frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. ADG711/ADG712/ADG713 –Typical Performance Characteristics 6.0 10m VDD = 5V TA = 25C 5.5 5.0 1m VDD = 2.7V 4.5 100 3.5 VDD = 4.5V VDD = 3V 3.0 ISUPPLY (Amps) RON () 4.0 2.5 2.0 VDD = 5V 4 SW 10 1 SW 1 100n 1.5 1.0 10n 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) 1n 100 5.0 Figure 1. On Resistance as a Function of VD (VS) 10k 100k FREQUENCY (Hz) 1M 10M Figure 4. Supply Current vs. Input Switching Frequency 6.0 –30 VDD = 3V 5.5 5.0 –40 VDD = 5V, 3V +85C –50 4.5 OFF ISOLATION (dB) +25C 4.0 RON () 1k 3.5 3.0 2.5 –40C 2.0 –60 –70 –80 –90 –100 1.5 –110 1.0 –120 0.5 0 0.5 1.0 1.5 2.0 2.5 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) 0 –130 10k 3.0 Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V 100k 1M 10M FREQUENCY (Hz) 100M Figure 5. Off Isolation vs. Frequency 6.0 –30 VDD = 5V 5.5 –40 VDD = 5V, 3V 5.0 –50 4.5 –60 CROSSTALK (dB) RON () 4.0 +85C 3.5 +25C 3.0 2.5 2.0 –70 –80 –90 –100 1.5 –40C –110 1.0 –120 0.5 –130 10k 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) 5.0 Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V 100k 1M 10M FREQUENCY (Hz) 100M Figure 6. Crosstalk vs. Frequency –6– REV. A ADG711/ADG712/ADG713 25 0 TA = 25C 20 15 –2 QINJ (pC) ON RESPONSE (dB) VDD = 5V 10 VDD = 3V VDD = 5V 5 –4 0 –5 –6 10k –10 100k 1M 10M FREQUENCY (Hz) 0 100M Figure 7. On Response vs. Frequency 0.5 1.0 1.5 2.0 2.5 3.0 3.5 SOURCE VOLTAGE (V) Figure 9 illustrates a photodetector circuit with programmable gain. An AD820 is used as the output operational amplifier. With the resistor values shown in the circuit, and using different combinations of the switches, gain in the range of 2 to 16 can be achieved. C1 R1 33k +5V AD820 VOUT +2.5V R2 510k +5V S1 D1 R4 240k R5 240k S2 D2 R6 120k R7 120k S3 D3 R8 120k S4 D4 R9 120k (LSB) IN1 IN2 IN3 R3 510k +2.5V R10 120k (MSB) IN4 GND GAIN RANGE 2 TO 16 Figure 9. Photodetector Circuit with Programmable Gain REV. A 4.5 5.0 Figure 8. Charge Injection vs. Source Voltage APPLICATIONS D1 4.0 –7– ADG711/ADG712/ADG713 Test Circuits IDS V1 IS (OFF) S D VS ID (OFF) S A D S A VS D ID (ON) VS VD A VD RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1F VDD D S 50% 50% VIN ADG712 50% 50% VOUT RL 300 IN VS VIN ADG711 VS CL 35pF VOUT 90% 90% GND t ON t OFF Test Circuit 4. Switching Times VDD VIN 0.1F 50% 0V VDD S1 VS1 VS2 D1 S2 D2 RL2 300 IN1, IN2 VIN CL2 35pF VOUT2 RL1 300 CL1 35pF VOUT1 VOUT1 90% 90% 0V 90% VOUT2 ADG713 50% 90% 0V GND tD tD Test Circuit 5. Break-Before-Make Time Delay, tD SW ON VDD VIN VDD RS VS D S VOUT CL 1nF IN SW OFF VOUT GND VOUT Q INJ = CL  VOUT Test Circuit 6. Charge Injection –8– REV. A ADG711/ADG712/ADG713 VDD VDD 0.1F 0.1F VDD S VIN VS VDD D S VOUT RL 50 IN VS GND VDD VDD VS NC 50 D VIN1 VIN2 D S GND RL 50 VOUT CHANNEL-TO-CHANNEL CROSSTALK = 20  LOG | VS /VOUT | Test Circuit 8. Channel-to-Channel Crosstalk REV. A IN Test Circuit 9. Bandwidth 0.1F –9– VOUT RL 50 GND Test Circuit 7. Off Isolation S VIN D ADG711/ADG712/ADG713 OUTLINE DIMENSIONS 16-Lead Standard Small Outline Package [SOIC] Narrow Body (R-16) Dimensions shown in millimeters and (inches) 10.00 (0.3937) 9.80 (0.3858) 4.00 (0.1575) 3.80 (0.1496) 16 9 1 8 6.20 (0.2441) 5.80 (0.2283) 1.75 (0.0689) 1.35 (0.0531) 1.27 (0.0500) BSC 0.50 (0.0197)  45 0.25 (0.0098) 0.25 (0.0098) 0.10 (0.0039) 8 0.51 (0.0201) SEATING 0.25 (0.0098) 0 1.27 (0.0500) PLANE 0.31 (0.0122) 0.40 (0.0157) 0.17 (0.0067) COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MS-012AC CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 1 8 PIN 1 1.20 MAX 0.15 0.05 0.20 0.09 0.65 BSC 0.30 0.19 COPLANARITY 0.10 SEATING PLANE 8 0 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153AB –10– REV. A ADG711/ADG712/ADG713 Revision History Location Page 3/04—Data Sheet changed from REV. 0 to REV. A. Added APPLICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 REV. A –11– –12– C00042–0–3/04(A)
ADG713BR-REEL7 价格&库存

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