ADG736LBRMZ1

ADG736LBRMZ1

  • 厂商:

    AD(亚德诺)

  • 封装:

  • 描述:

    ADG736LBRMZ1 - CMOS Low Voltage 2.5 OHM Dual SPDT Switch - Analog Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
ADG736LBRMZ1 数据手册
CMOS Low Voltage 2.5 Ω Dual SPDT Switch ADG736L FEATURES 1.8 V to 5.5 V single supply 2.5 Ω (typical) on resistance Low on-resistance flatness Guaranteed leakage performance over −40°C to +85°C −3 dB bandwidth > 200 MHz Rail-to-rail operation 10-lead MSOP package Fast switching times tON 16 ns tOFF 8 ns Typical power consumption ( 200 MHz. Low Power Dissipation. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved. ADG736L TABLE OF CONTENTS Features .............................................................................................. 1 Applications....................................................................................... 1 General Description ......................................................................... 1 Functional Block Diagram .............................................................. 1 Product Highlights ........................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 Pin Configuration and Function Descriptions..............................6 Typical Performance Characteristics ..............................................7 Test Circuits........................................................................................9 Terminology .................................................................................... 10 Applications Information .............................................................. 11 Outline Dimensions ....................................................................... 12 Ordering Guide .......................................................................... 12 REVISION HISTORY 1/07—Revision 0: Initial Version Rev. 0 | Page 2 of 12 ADG736L SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V; all specifications −40°C to +85°C, unless otherwise noted. Table 1. B Version 1 −40°C to 25°C +85°C 0 V to VDD 2.5 4 0.1 0.5 1.2 LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 0.005 ±0.1 DYNAMIC CHARACTERISTICS 2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth (–3 dB) CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 12 16 5 8 7 1 −62 −82 −62 −82 200 9 32 0.001 1.0 1 2 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT (ON)) Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max nA typ nA max nA typ nA max V min V max μA typ μA max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ μA typ μA max Test Conditions/Comments VS = 0 V to VDD, IDS = −10 mA; see Figure 10 VS = 0 V to VDD, IDS = −10 mA VS = 0 V to VDD, IDS = −10 mA VDD = 5.5 V 4.5 0.4 ±0.01 ±0.1 ±0.01 ±0.1 VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 11 VS = VD = 1 V or 4.5 V; see Figure 12 ±0.3 ±0.3 2.4 0.8 VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 3 V; see Figure 13 RL = 300 Ω, CL = 35 pF VS = 3 V; see Figure 13 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 3 V; see Figure 14 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 15 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 16 RL = 50 Ω, CL = 5 pF; see Figure 17 VDD = 5.5 V Digital inputs = 0 V or 5 V Temperature range is −40°C to +85°C for the B version. Guaranteed by design; not subject to production test. Rev. 0 | Page 3 of 12 ADG736L VDD = 3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted. Table 2. B Version 1 −40°C to +85°C 0 V to VDD 5.5 8 0.4 2.5 ±0.01 ±0.1 Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 0.005 ±0.1 DYNAMIC CHARACTERISTICS 2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth (−3 dB) CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 14 20 6 10 7 1 −62 −82 −62 −82 200 9 32 0.001 1.0 1 2 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) 25°C Unit V Ω typ Ω max Ω typ Ω max Ω typ nA typ Test Conditions/Comments 5 0.1 VS = 0 V to VDD, IDS = −10 mA; see Figure 10 VS = 0 V to VDD, IDS = −10 mA VS = 0 V to VDD, IDS = −10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V; see Figure 11 VS = VD = 1 V or 3 V; see Figure 12 ±0.3 ±0.3 2.0 0.4 nA max nA typ nA max V min V max μA typ μA max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ VDD = 3.3 V μA typ μA max Digital inputs = 0 V or 3 V RL = 300 Ω, CL = 35 pF VS = 2 V; see Figure 13 RL = 300 Ω, CL = 35 pF VS = 2 V; see Figure 13 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V; see Figure 14 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 15 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 16 RL = 50 Ω, CL = 5 pF; see Figure 17 VIN = VINL or VINH ±0.01 ±0.1 Temperature range is −40°C to +85°C for the B version. Guaranteed by design; not subject to production test. Rev. 0 | Page 4 of 12 ADG736L ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to GND Analog, Digital Inputs 1 Continuous Current, S or D Peak Current, S or D Operating Temperature Range Industrial (B Version) Storage Temperature Range Junction Temperature MSOP Package, Power Dissipation θJA Thermal Impedance Lead Temperature (Soldering, 10 sec) IR Reflow (Peak Temperature,
ADG736LBRMZ1
1. 物料型号: - 型号为ADG736L,是一款CMOS低压双SPDT开关。

2. 器件简介: - ADG736L是一个单片设备,包含两个独立可选的CMOS单刀双掷(SPDT)开关。该开关使用亚微米工艺设计,提供低功耗、高开关速度、低导通电阻、低漏电流和宽输入信号带宽。

3. 引脚分配: - IN1:逻辑控制输入。 - S1A:源极终端,可以是输入或输出。 - GND:地(0V)参考。 - S2A:源极终端,可以是输入或输出。 - IN2:逻辑控制输入。 - D2:漏极终端,可以是输入或输出。 - S2B:源极终端,可以是输入或输出。 - VDD:最高电源供电潜力。 - S1B:源极终端,可以是输入或输出。 - D1:漏极终端,可以是输入或输出。

4. 参数特性: - 供电电压范围:1.8V至5.5V。 - 导通电阻( RON ):典型值为2.5Ω。 - 工作温度范围:-40°C至+85°C。 - 漏电流:关闭时±0.01 nA(典型值),开时±0.1 nA(典型值)。 - 动态特性:tON为16ns(典型值),tOFF为8ns(典型值)。 - 带宽(-3dB):>200MHz。

5. 功能详解: - ADG736L具有低于-3dB的200MHz带宽,低导通电阻平坦度,低功耗,以及铁路至铁路操作能力。它适用于电池供电系统、通信系统、采样保持系统、音频信号路由等应用。

6. 应用信息: - 应用包括USB 1.1信号切换电路、手机、PDA、电池供电系统、通信系统、采样保持系统、音频信号路由以及作为机械式簧片继电器的替代品。

7. 封装信息: - ADG736L提供10引脚MSOP封装,符合JEDEC标准MO-187-BA。封装选项包括RM-10,有铅(SOY)和无铅(SOZ)版本。
ADG736LBRMZ1 价格&库存

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