ADG749BKS-R2

a CMOS 1.8 V to 5.5 V, 2.5
2:1 MUX/SPDT Switch in SC70 Package ADG749 FEATURES 1.8 V to 5.5 V Single Supply 5
(Max) On Resistance 0.75
(Typ) On Resistance Flatness Automotive Temperature Range: –40C to +125C –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 6-Lead SC70 Package Fast Switching Times: tON = 12 ns tOFF = 6 ns Typical Power Consumption (< 0.01 W) TTL/CMOS Compatible FUNCTIONAL BLOCK DIAGRAM ADG749 S2 D S1 IN *SWITCHES SHOWN FOR A LOGIC “1” INPUT APPLICATIONS Battery-Powered Systems Communication Systems Sample-and-Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG749 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. 1. 1.8 V to 5.5 V Single-Supply Operation. The ADG749 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails. The ADG749 can operate from a single-supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. 2. Very Low RON (5 Ω Max at 5 V and 10 Ω Max at 3 V). At 1.8 V operation, RON is typically 40 Ω over the temperature range. Each switch of the ADG749 conducts equally well in both directions when on. The ADG749 exhibits break-before-make switching action. 3. Automotive Temperature Range: –40C to 125C. Because of the advanced submicron process, –3 dB bandwidths of greater than 200 MHz can be achieved. The ADG749 is available in a 6-lead SC70 package. 4. On Resistance Flatness (RFLAT(ON)) (0.75 Ω typ). 5. –3 dB Bandwidth > 200 MHz. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. Fast tON /tOFF. 8. Tiny 6-lead SC70 package. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 ADG749–SPECIFICATIONS1 (V DD Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) 25C LEAKAGE CURRENTS2 Source Off Leakage IS (Off) Channel On Leakage ID, IS (On) B Version –40C to –40C to +85C +125C 0 V to VDD 2.5 5 On Resistance Match Between Channels (∆RON) On Resistance Flatness (RFLAT(ON)) = 5 V  10%, GND = 0 V.) 6 7 0.1 0.8 0.8 1.2 1.5 0.75 ± 0.01 ± 0.25 ± 0.01 ± 0.25 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 7 Unit Test Conditions/Comments V Ω typ Ω max VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 Ω typ Ω max Ω typ Ω max VS = 0 V to VDD, IS = –10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V or VS = VD = 4.5 V; Test Circuit 3 ± 0.35 1 ± 0.35 5 nA typ nA max nA typ nA max 2.4 0.8 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF; Test Circuit 8 tOFF 3 Break-Before-Make Time Delay, tD 8 Off Isolation –67 –87 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (OFF) CD, CS (ON) 200 7 27 MHz typ pF typ pF typ 12 6 1 VDD = 5.5 V Digital Inputs = 0 V or 5.5 V POWER REQUIREMENTS IDD VS = 0 V to VDD, IS = –10 mA 0.001 1.0 µA typ µA max NOTES 1 Temperature range is as follows: B Version: –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. A ADG749 SPECIFICATIONS1 (V DD = 3 V ⴞ 10%, GND = 0 V.) Parameter 25ⴗC ANALOG SWITCH Analog Signal Range On Resistance (RON) 6 B Version –40ⴗC to –40ⴗC to +85ⴗC +125ⴗC 0 V to VDD On Resistance Match Between Channels (∆RON) 7 10 0.1 0.8 2.5 On Resistance Flatness (RFLAT(ON)) 12 0.8 Unit Test Conditions/Comments V Ω typ Ω max VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 Ω typ Ω max Ω typ 2 LEAKAGE CURRENTS Source Off Leakage IS (Off) Channel On Leakage ID, IS (On) ± 0.01 ± 0.25 ± 0.01 ± 0.25 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 10 VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V or VS = VD = 3 V; Test Circuit 3 ± 0.35 1 ± 0.35 5 2.0 0.8 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V; Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF; Test Circuit 8 tOFF 4 Break-Before-Make Time Delay, tD 8 Off Isolation –67 –87 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (Off) CD, CS (On) 200 7 27 MHz typ pF typ pF typ 8 1 POWER REQUIREMENTS VDD = 3.3 V Digital Inputs = 0 V or 3.3 V 0.001 1.0 NOTES 1 Temperature range is as follows: B Version: –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. A VS = 0 V to VDD, IS = –10 mA nA typ nA max nA typ nA max 15 IDD VS = 0 V to VDD, IS = –10 mA –3– µA typ µA max ADG749 ABSOLUTE MAXIMUM RATINGS 1 TERMINOLOGY (TA = 25°C, unless otherwise noted) VDD GND S D IN RON ∆RON VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV RFLAT(ON) IS (Off) ID, IS (On) VD (VS) CS (Off) CD, CS (On) tON 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. tOFF tD Crosstalk Table I. Truth Table ADG749 IN Switch S1 Switch S2 0 1 ON OFF OFF ON Off Isolation Bandwidth On Response Insertion Loss PIN CONFIGURATION IN 1 VDD 2 GND 3 ADG749 TOP VIEW (Not to Scale) 6 S2 5 D 4 S1 Most Positive Power Supply Potential Ground (0 V) Reference Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input Ohmic Resistance between D and S On Resistance Match between any Two Channels i.e., RON max – RON min Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch Off Channel Leakage Current with the Switch On Analog Voltage on Terminals D and S Off Switch Source Capacitance On Switch Capacitance Delay between applying the digital control input and the output switching on. Delay between applying the digital control input and the output switching off. Off time or on time measured between the 90% points of both switches, when switching from one address state to another. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an off switch. The frequency at which the output is attenuated by –3 dBs. The Frequency Response of the On Switch Loss due to On Resistance of the Switch ORDERING GUIDE Model Temperature Range Package Description Package Option Branding Information* ADG749BKS –40°C to +125°C SC70 (6-Lead Plastic Surface Mount) KS-6 SHB *Branding on this package is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG749 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– WARNING! ESD SENSITIVE DEVICE REV. A Typical Performance Characteristics– ADG749 0.15 6.0 5.5 VDD = 2.7V VDD = 5V VD = 4.5V/1V VS = 1V/4.5V TA = 25C 5.0 0.10 RON –
4.0 VDD = 4.5V VDD = 3.0V 3.5 CURRENT – nA 4.5 3.0 2.5 VDD = 5.0V 2.0 ID, I S (ON) 0.05 0 1.5 1.0 IS (OFF) 0.5 –0.05 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 70 80 90 TPC 4. Leakage Currents vs. Temperature TPC 1. On Resistance vs. VD (VS) Single Supplies 0.15 6.0 VDD = 3V VD = 3V/1V VS = 1V/3V VDD = 3V 5.5 5.0 +85C 4.5 0.10 +25C CURRENT – nA 4.0 –40C RON –
30 40 50 60 TEMPERATURE – C 3.5 3.0 2.5 2.0 0.05 1.5 ID, I S (ON) 0 1.0 0.5 0 IS (OFF) –0.05 0 0.5 1.0 1.5 2.0 2.5 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 3.0 TPC 2. On Resistance vs. VD (VS) for Different Temperatures VDD = 3 V 0 10 20 30 40 50 60 TEMPERATURE – C 70 80 90 TPC 5. Leakage Currents vs. Temperature 6.0 10m 5.5 VDD = 5V VDD = 5V 1m 5.0 4.5 100 3.5 I SUPPLY – A RON –
4.0 +85C 3.0 2.5 +25C 2.0 –40C 10 1 100n 1.5 1.0 10n 0.5 0 1n 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V TPC 3. On Resistance vs. VD (VS) for Different Temperatures, VDD = 5 V REV. A 1 10 100 1k 10k 100k FREQUENCY – Hz 1M 10M 100M TPC 6. Supply Current vs. Input Switching Frequency –5– ADG749 –30 0 VDD = 5V, 3V –40 VDD = 5V –60 ON RESPONSE – dB OFF ISOLATION – dB –50 –70 –80 –90 –100 –2 –4 –110 –120 –130 10k 100k –6 10k 100M 0 1M 10M FREQUENCY – Hz TPC 7. Off Isolation vs. Frequency 100k 10M 1M FREQUENCY – Hz 100M TPC 9. On Response vs. Frequency 12 –30 VDD = 5V, 3V –40 10 VDD = 5V 8 –60 6 –70 QINJ – pC CROSSTALK – dB –50 –80 –90 VDD = 3V 4 2 –100 0 –110 –2 –120 –130 10k –4 100k 1M FREQUENCY – Hz 10M 0 100M 0 1 2 3 5 4 VS – V TPC 8. Crosstalk vs. Frequency TPC 10. Charge Injection vs. Source Voltage –6– REV. A ADG749 Test Circuits Test Circuits 1 to 8 define the test conditions used in the product specification table. IDS V1 S IS (OFF) D A VS ID (OFF) S D ID (ON) S A VS RON = V1/I DS VD Test Circuit 1. On Resistance A VS Test Circuit 2. Off Leakage 0.1F D VD Test Circuit 3. On Leakage VDD VIN 50% 50% VDD S D RL 300
IN VS GND 90% 90% VOUT VOUT CL 35pF tOFF tON Test Circuit 4. Switching Times 0.1F VIN VDD S1 VS1 VDD D S2 VS2 D2 RL2 300
IN CL2 35pF VOUT 50% 0V 50% VOUT 50% 0V tD GND VIN 50% tD Test Circuit 5. Break-Before-Make Time Delay, tD VDD 0.1F VDD VDD 0.1F 0.1F NETWORK ANALYZER NETWORK ANALYZER VDD S IN 50
50
VS D VIN GND RL 50
VOUT VOUT OFF ISOLATION = 20 LOG VS Test Circuit 6. Off Isolation REV. A VOUT VDD RL 50
S1 D S2 50
VS NETWORK ANALYZER VDD S R 50
50
IN VS D IN VIN GND GND CHANNEL-TO-CHANNEL VOUT CROSSTALK = 20 LOG VS Test Circuit 7. Channel-to-Channel Crosstalk –7– INSERTION LOSS = 20 LOG RL 50
VOUT VOUT WITH SWITCH VOUT WITHOUT SWITCH Test Circuit 8. Bandwidth ADG749 The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). APPLICATIONS INFORMATION The ADG749 belongs to Analog Devices’ new family of CMOS switches. This series of general-purpose switches has improved switching times, lower on resistance, higher bandwidths, low power consumption, and low leakage currents. ADG749 Supply Voltages Functionality of the ADG749 extends from 1.8 V to 5.5 V single supply, which makes it ideal for battery-powered instruments, where power efficiency and performance are important design parameters. The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth, a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the ADG749 can be seen in TPC 9. It is important to note that the supply voltage effects the input signal range, the on resistance, and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. Off Isolation For VDD = 1.8 V operation, RON is typically 40 Ω over the temperature range. Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load when the switch is off, as shown in Figure 2. On Response vs. Frequency Figure 1 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk, and system bandwidth. CDS VOUT VIN CDS D S RON VIN CLOAD CD CLOAD RLOAD Figure 2. Off Isolation Is Affected by External Load Resistance and Capacitance VOUT CD D S RLOAD The larger the value of CDS, the larger the values of feedthrough that will be produced. The typical performance characteristic graph of TPC 7 illustrates the drop in off isolation as a function of frequency. From dc to roughly 200 kHz, the switch shows better than –95 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than –67 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest CDS possible. The values of load resistance and capacitance also affect off isolation, since they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. Figure 1. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 1) is of the form A(s) shown below.  s(RON CDS ) + 1  A(s) = RT    s(RT RON CT ) + 1  where: RT = RLOAD ( RLOAD + RON )   s(RLOAD CDS ) A(s) =    s(RLOAD ) (CLOAD + CD + CDS ) + 1  CT = CLOAD + CD + CDS –8– REV. A ADG749 OUTLINE DIMENSIONS 6-Lead Plastic Surface Mount Package [SC70] (KS-6) Dimensions shown in millimeters 2.00 BSC 6 5 4 2 3 2.10 BSC 1.25 BSC 1 PIN 1 0.65 BSC 1.30 BSC 1.00 0.90 0.70 0.10 MAX COPLANARITY 1.10 MAX 0.22 0.08 0.30 0.15 SEATING PLANE 8 4 0 COMPLIANT TO JEDEC STANDARDS MO-203AB REV. A –9– 0.46 0.36 0.26 ADG749 Revision History Location Page 7/02—Data Sheet changed from REV. 0 to REV. A. Changes to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Additions to PRODUCT HIGHLIGHTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Changes to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Edits to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Changes to TERMINOLOGY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Edits to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Added new TPCs 4 and 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Added TPC 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 TEST CIRCUITS 6, 7, and 8 replaced . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Updated KS-6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 –10– REV. A –11– –12– PRINTED IN U.S.A. C02075–0–7/02(A)