ADG774BR

a FEATURES Low Insertion Loss and On Resistance: 2.2
Typical On Resistance Flatness 0.5
Typical Automotive Temperature Range –40C to +125C –3 dB Bandwidth = 240 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: 0.5% Low Quiescent Supply Current (1 nA Typical) Fast Switching Times tON 7 ns tOFF 4 ns TTL/CMOS Compatible CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux ADG774 FUNCTIONAL BLOCK DIAGRAM ADG774 S1A D1 S1B S2A D2 S2B S3A D3 S3B S4A D4 S4B 1 OF 2 DECODER APPLICATIONS USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communications Systems Data Acquisition Systems Token Ring 4 Mbps/16 Mbps Audio and Video Switching Relay Replacement GENERAL DESCRIPTION The ADG774 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than 0.5 Ω with an input signal ranging from 0 V to 5 V. The bandwidth of the ADG774 is greater than 200 MHz; this, coupled with low distortion (typically 0.5%), makes the part suitable for switching USB 1.1 data signals and fast Ethernet signals. The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, also makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments. EN IN The ADG774 operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table. These switches conduct equally well in both directions when ON, and have an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG774 switches exhibit break-before-make switching action. PRODUCT HIGHLIGHTS 1. Wide –3 dB Bandwidth, 240 MHz. 2. Ultralow Power Dissipation. 3. Extended Signal Range. The ADG774 is fabricated on a CMOS process giving an increased signal range that fully extends to the supply rails. 4. Low Leakage Over Temperature. 5. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer. 6. Crosstalk Typically –70 dB @ 30 MHz. 7. Off Isolation Typically –60 dB @ 10 MHz. REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved. ADG774–SPECIFICATIONS SINGLE SUPPLY (V DD = 5 V  10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.) Parameter +25C ANALOG SWITCH Analog Signal Range On Resistance (RON) 2.2 On Resistance Match between Channels (
RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH B Version1 –40C to –40C to +85C +125C 5 0 V to VDD V Ω typ 7 Ω max 0.5 0.5 1 1 ±1 ± 1.5 ±1 ± 1.5 ±1 ± 1.5 nA typ nA max nA typ nA max nA typ nA max VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V; Test Circuit 2 VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V; Test Circuit 2 VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3 2.0 0.8 V min V max ± 0.5 µA typ µA max VIN = VINL or VINH ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ RL = 100 Ω, CL = 35 pF, VS = +3 V; Test Circuit 4 RL = 100 Ω, CL = 35 pF, VS = +3 V; Test Circuit 4 RL = 100 Ω, CL = 35 pF, VS1 = VS2 = +5 V; Test Circuit 5 RL = 100 Ω, f = 10 MHz; Test Circuit 7 RL = 100 Ω, f = 10 MHz; Test Circuit 8 RL = 100 Ω; Test Circuit 6 RL = 100 Ω CL = 1 nF; Test Circuit 9 f = 1 kHz f = 1 kHz f = 1 MHz 0.001 7 15 4 8 5 1 –65 –75 240 0.5 10 10 20 30 tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth –3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) 20 9 POWER REQUIREMENTS IDD 1 1 1 100 1 µA max µA typ µA typ mA max 0.001 IIN IO VD = 0 V to VDD, IS = –10 mA VD = 0 V to VDD, IS = –10 mA 0.5 DYNAMIC CHARACTERISTICS2 tON Test Conditions/Comments Ω typ Ω max Ω typ Ω max 0.15 ± 0.01 ± 0.5 ± 0.01 ± 0.5 ± 0.01 ± 0.5 Unit VD = 0 V to VDD, IS = –1 mA VDD = +5.5 V Digital Inputs = 0 V or VDD VIN = +5 V VS/VD = 0 V NOTES 1 Temperature range: B Version, –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. C ADG774 SINGLE SUPPLY (VDD = 3 V  10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.) Parameter +25C ANALOG SWITCH Analog Signal Range On Resistance (RON) 4 On Resistance Match between Channels (
RON) B Version1 –40C to –40C to +85C +125C LEAKAGE CURRENTS Source OFF Leakage IS (OFF) 8 0.5 0.5 4 4 ±1 ± 1.5 ±1 ± 1.5 ±1 ± 1.5 nA typ nA max nA typ nA max nA typ nA max 2.0 0.8 V min V max ± 0.5 µA typ µA max VIN = VINL or VINH ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ RL = 100 Ω, CL = 35 pF, VS = +1.5 V; Test Circuit 4 RL = 100 Ω, CL = 35 pF, VS = +1.5 V; Test Circuit 4 RL = 100 Ω, CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 RL = 50 Ω, f = 10 MHz; Test Circuit 7 RL = 50 Ω, f = 10 MHz; Test Circuit 8 RL = 50 Ω; Test Circuit 6 RL = 50 Ω CL = 1 nF; Test Circuit 9 f = 1 kHz f = 1 kHz f = 1 MHz Ω typ Ω max Ω typ Ω max Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 2 ± 0.01 ± 0.5 ± 0.01 ± 0.5 ± 0.01 ± 0.5 0.001 DYNAMIC CHARACTERISTICS2 tON 8 16 5 10 5 1 –65 –75 240 2 3 10 20 30 tOFF Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth –3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) 21 11 POWER REQUIREMENTS IDD 1 1 1 100 1 µA max µA typ µA typ mA max 0.001 IIN IO Test Conditions/Comments 0 V to VDD V Ω typ 9 Ω max 0.15 On Resistance Flatness (RFLAT(ON)) Unit VD = 0 V to VDD, IS = –10 mA VD = 0 V to VDD, IS = –10 mA VD = 0 V to VDD, IS = –10 mA VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3 VDD = +3.3 V Digital Inputs = 0 V or VDD VIN = +3 V VS/VD = 0 V NOTES 1 Temperature range: B Version, –40°C to +125°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. Table I. Truth Table REV. C EN IN D1 D2 D3 D4 Function 1 0 0 X 0 1 Hi-Z S1A S1B Hi-Z S2A S2B Hi-Z S3A S3B Hi-Z S4A S4B DISABLE IN = 0 IN = 1 –3– ADG774 ABSOLUTE MAXIMUM RATINGS 1 QSOP Package, Power Dissipation . . . . . . . . . . . . . . . 566 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . 149.97°C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C I R Reflow, Peak Temperature (