300 MHz to 1100 MHz Balanced Mixer,
LO Buffer, and RF Balun
ADL5369
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
RF frequency range of 300 MHz to 1100 MHz
IF frequency range of 30 MHz to 450 MHz
Power conversion loss: 6.2 dB
SSB noise figure of 7.2 dB
Input IP3 of 28 dBm
Typical LO interface return loss of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Typical single-supply operation: 3.3 V to 5 V
Exposed pad, 5 mm × 5 mm, 20-lead LFCSP
VCMI
IFOP
IFON
PWDN
COMM
20
19
18
17
16
ADL5369
VPMX 1
15 LOI2
RFIN 2
14 VPSW
RFCT 3
13 VGS1
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
COMM 4
12 VGS0
COMM 5
11 LOI1
6
7
8
9
10
VLO3
LGM3
VLO2
LOSW
NIC
NIC = NOT INTERNALLY CONNECTED.
13361-001
BIAS
GENERATOR
Figure 1.
GENERAL DESCRIPTION
The ADL5369 uses a highly linear, doubly balanced passive mixer
core along with integrated radio frequency (RF) and local oscillator
(LO) balancing circuitry to allow single-ended operation. The
ADL5369 incorporates an RF balun, allowing optimal performance
over a 300 MHz to 1100 MHz RF input frequency range. The
balanced passive mixer arrangement provides good LO to RF
leakage, typically better than −25 dBm, and excellent intermodulation performance. The balanced mixer core also provides
extremely high input linearity, allowing the device to be used in
demanding cellular applications where in-band blocking signals
may otherwise result in the degradation of dynamic performance. The passive mixer core yields a typical power conversion loss
of 6.2 dB.
The ADL5369 provides two switched LO paths that can be
used in time division duplex (TDD) applications where it is
desirable to rapidly switch between two local oscillators. LO
current can be externally set using a resistor to minimize dc
current commensurate with the desired level of performance.
For low voltage applications, the ADL5369 is capable of operation
at voltages down to 3.3 V with substantially reduced current.
Under low voltage operation, an additional logic pin is provided
to power down (20 dB over a limited bandwidth
Typ
Unit
1100
dB
Ω
MHz
450
5.5
Ω||pF
MHz
V
10
50
300
Differential impedance, f = 93 MHz
Externally generated
Max
35.2||11.9
30
3.3
−6
5.0
0
16.5
50
330
+10
1550
1.0
0.4
1.4
Device enabled, IF output to 90% of its final level
Device disabled, supply current < 5 mA
Device enabled
Device disabled
Apply the supply voltage from the external circuit through the choke inductors.
PWDN function is intended for use with VS ≤ 3.6 V only.
Rev. A | Page 3 of 23
160
220
0.0
70
dBm
dB
Ω
MHz
V
V
V
ns
ns
μA
μA
ADL5369
Data Sheet
5 V PERFORMANCE
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, R9 = 1.7 kΩ, unless
otherwise noted.
Table 3.
Parameter
DYNAMIC PERFORMANCE
Power Conversion Loss
Voltage Conversion Loss
Single Sideband (SSB) Noise Figure
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
Input 1 dB Compression Point (IP1dB)1
LO to IF Leakage
LO to RF Leakage
RF to IF Isolation
IF/2 Spurious
IF/3 Spurious
POWER SUPPLY
Positive Supply Voltage
Total Quiescent Current
1
Test Conditions/Comments
Min
Typ
Including 1:1 IF port transformer and printed circuit board (PCB) loss
ZSOURCE = 50 Ω, differential ZLOAD = 50 Ω differential
fRF1 = 449.5 MHz, fRF2 = 451.5 MHz, fLO = 543 MHz, each RF tone
at 0 dBm
fRF1 = 500 MHz, fRF2 = 450 MHz, fLO = 543 MHz, each RF tone
at −10 dBm
Exceeding 20 dBm RF power results in damage to the device
Unfiltered IF output
Max
6.2
1.4
7.2
28
dB
dB
dB
dBm
56
dBm
20
dBm
dBm
dBm
dBc
dBc
dBc
5.5
V
mA
−16
−27
−42
−57
−60
0 dBm input power
0 dBm input power
4.5
5
84
VS = 5 V
Unit
Exceeding 20 dBm RF power results in damage to the device.
3.3 V PERFORMANCE
VS = 3.3 V, IS = 55 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
Table 4.
Parameter
DYNAMIC PERFORMANCE
Power Conversion Loss
SSB Noise Figure
IIP3
IIP2
POWER INTERFACE
Supply Voltage
Quiescent Current
Power-Down Current
Test Conditions/Comments
Min
Including 1:1 IF port transformer and PCB loss
fRF1 = 449.5 MHz, fRF2 = 451.5 MHz, fLO = 543 MHz, each RF
tone at −10 dBm
fRF1 = 500 MHz, fRF2 = 450 MHz, fLO = 543 MHz, each RF tone
at −10 dBm
3.0
Resistor programmable
Device disabled
Rev. A | Page 4 of 23
Typ
Max
Unit
6.5
7.4
24
dB
dB
dBm
53
dBm
3.3
55
150
3.6
V
mA
μA
Data Sheet
ADL5369
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 5.
Parameter
VS
RF Input Level
LO Input Level
IFOP, IFON Bias Voltage
VGS0, VGS1, LOSW, PWDN
Internal Power Dissipation
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
5.5 V
20 dBm
13 dBm
6.0 V
5.5 V
0.6 W
150°C
−40°C to +85°C
−65°C to +150°C
260°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
θJA is the junction to ambient thermal resistance (°C/W), θJB is
the junction to board thermal resistance (°C/W), and θJC is the
junction to case thermal resistance (°C/W). θJC is determined by
the mechanical design of the ADL5369 and is optimized to the
lowest possible value. θJA and θJB are functions of the design of
the PCB, and are under the control of the user. The data shown
in Table 6 is based on a JEDEC standard design and is provided
for comparison purposes.
Table 6. Thermal Resistance
Package Type
20-Lead LFCSP
1
θJA1
25
θJB1
14.74
θJC1
1.08
Unit
°C/W
See JEDEC Standard JESD51-2 for information on optimizing thermal
impedance (PCB with 3 × 3 vias).
Junction to Board Thermal Impedance
The junction to board thermal impedance (θJB) is the thermal
impedance from the die to or near the component lead of the
ADL5369. For the ADL5369, θJB was determined experimentally to
be 14.74°C/W with the device mounted on a 4-layer circuit board
(two of the layers being ground planes) in a configuration
similar to that of the ADL5369-EVALZ evaluation board. Board
size and complexity (number of layers) affect θJB; more layers tend
to reduce the thermal impedance slightly.
If the board temperature is known, use the junction to board
thermal impedance to calculate die temperature (also known as
junction temperature) to ensure that it does not exceed the specified limit of 150°C. For example, if the board temperature is
85°C, the die temperature is given by the equation
TJ = TB + (PDISS × θJB)
where:
TJ is the junction temperature.
TB is the board temperature measured at or near the component
lead.
PDISS is the power dissipated from the device.
The typical worst case power dissipation for the ADL5369 is
522 mW (5.5 V × 95 mA). Therefore, TJ is
TJ = 85°C + (0.522 W × 14.74°C/W) = 92.70°C
ESD CAUTION
Rev. A | Page 5 of 23
ADL5369
Data Sheet
20
19
18
17
16
VCMI
IFOP
IFON
PWDN
COMM
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
ADL5369
TOP VIEW
(Not to Scale)
15
14
13
12
11
LOI2
VPSW
VGS1
VGS0
LOI1
NOTES
1. NIC = NOT INTERNALLY CONNECTED.
2. EXPOSED PAD MUST BE SOLDERED TO GROUND.
13361-002
VLO3
LGM3
VLO2
LOSW
NIC
6
7
8
9
10
VPMX
RFIN
RFCT
COMM
COMM
Figure 2. Pin Configuration
Table 7. Pin Function Descriptions
Pin No.
1
2
3
4, 5, 16
6, 8
7
9
10
11, 15
12, 13
14
17
18, 19
20
Mnemonic
VPMX
RFIN
RFCT
COMM
VLO3, VLO2
LGM3
LOSW
NIC
LOI1, LOI2
VGS0, VGS1
VPSW
PWDN
IFON, IFOP
VCMI
EPAD (EP)
Description
Positive Supply Voltage for the IF Amplifier.
RF Input. This pin must be ac-coupled.
RF Balun Center Tap (AC Ground).
Device Common (DC Ground).
Positive Supply Voltages for LO Amplifier.
LO Amplifier Bias Control.
LO Switch. LOI1 is selected for 0 V, or LOI2 is selected for 3 V.
Not Internally Connected.
LO Inputs. These pins must be ac-coupled.
Mixer Gate Bias Controls (3 V Logic). Ground these pins for the nominal setting.
Positive Supply Voltage for LO Switch.
Power-Down. Connect this pin to ground for normal operation or connect this pin to 3.0 V for disable mode.
Differential IF Outputs.
No Connect. This pin can be grounded.
Exposed Pad. The exposed pad must be soldered to ground.
Rev. A | Page 6 of 23
Data Sheet
ADL5369
TYPICAL PERFORMANCE CHARACTERISTICS
5 V PERFORMANCE CHARACTERISTICS
RF Frequency
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
0.100
SUPPLY CURRENT (A)
0.095
90
–40°C
+25°C
+85°C
80
–40°C
+25°C
+85°C
70
INPUT IP2 (dBm)
0.090
0.085
0.080
60
50
40
0.075
500
600
700
800
900
1000
1100
20
300
RF FREQUENCY (MHz)
400
SSB NOISE FIGURE (dB)
4
2
500
600
700
800
900
1000
1100
–40°C
+25°C
+85°C
12
10
8
6
4
0
300
13361-004
400
30
25
20
600
700
800
900
RF FREQUENCY (MHz)
1000
1100
13361-005
15
500
500
600
700
800
900
1000
Figure 7. SSB Noise Figure vs. RF Frequency
–40°C
+25°C
+85°C
400
400
RF FREQUENCY (MHz)
Figure 4. Power Conversion Loss vs. RF Frequency
INPUT IP3 (dBm)
1100
2
RF FREQUENCY (MHz)
10
300
1000
Figure 5. Input IP3 vs. RF Frequency
Rev. A | Page 7 of 23
1100
13361-007
CONVERSION LOSS (dB)
6
35
900
14
8
40
800
16
10
0
300
700
Figure 6. Input IP2 vs. RF Frequency
–40°C
+25°C
+85°C
12
600
RF FREQUENCY (MHz)
Figure 3. Supply Current vs. RF Frequency
14
500
13361-006
400
13361-003
0.070
300
30
ADL5369
Data Sheet
Temperature
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
0.100
4.75V
5V
5.25V
4.75V
5V
5.25V
57
0.085
0.080
55
53
51
0.075
49
0.070
47
0.065
–40
–20
0
20
40
60
80
45
–45
TEMPERATURE (°C)
–25
10
4.75V
5V
5.25V
9
6.5
6.0
5.5
5.0
20
40
60
80
6
4.75V
5V
5.25V
30
29
28
27
26
0
20
40
TEMPERATURE (°C)
60
80
13361-010
25
–20
–20
0
20
40
60
Figure 12. SSB Noise Figure vs. Temperature
31
IPNUT IP3 (dBm)
7
TEMPERATURE (°C)
32
24
–40
4.75V
5V
5.25V
8
4
–40
Figure 9. Power Conversion Loss vs. Temperature
33
75
Figure 10. Input IP3 vs. Temperature
Rev. A | Page 8 of 23
80
13361-012
0
13361-009
–20
TEMPERATURE (°C)
34
55
5
4.5
4.0
–40
35
Figure 11. Input IP2 vs. Temperature
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
7.0
15
TEMPERATURE (°C)
Figure 8. Supply Current vs. Temperature
8.0
–5
13361-011
INPUT IP2 (dBm)
0.090
13361-008
SUPPLY CURRENT (A)
0.095
59
Data Sheet
ADL5369
IF Frequency
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
0.100
0.095
60
0.090
INPUT IP2 (dBm)
0.085
0.080
0.075
–40°C
+25°C
+85°C
55
50
45
80
130
180
230
280
330
380
35
30
13361-013
0.070
30
430
IF FREQUENCY (MHz)
80
330
380
430
380
430
12
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
280
14
8
6
4
2
10
8
6
4
2
80
130
180
230
280
330
380
430
IF FREQUENCY (MHz)
0
30
13361-014
0
30
26.0
25.5
–40°C
+25°C
+85°C
24.5
24.0
23.5
23.0
22.5
22.0
130
180
230
280
330
IF FREQUENCY (MHz)
380
430
13361-015
21.5
80
130
180
230
280
330
Figure 17. SSB Noise Figure vs. IF Frequency
25.0
21.0
30
80
IF FREQUENCY (MHz)
Figure 14. Power Conversion Loss vs. IF Frequency
INPUT IP3 (dBm)
230
Figure 16. Input IP2 vs. IF Frequency
–40°C
+25°C
+85°C
10
180
IF FREQUENCY (MHz)
Figure 13. Supply Current vs. IF Frequency
12
130
13361-016
40
13361-017
SUPPLY CURRENT (A)
65
–40°C
+25°C
+85°C
Figure 15. Input IP3 vs. IF Frequency
Rev. A | Page 9 of 23
ADL5369
Data Sheet
LO Power and Spurious Performance
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
–30
6.0
5.5
–50
–60
–70
5.0
–80
4.5
–90
–4
–2
0
2
4
6
8
10
LO POWER (dBm)
–100
300
34
600
700
800
900
1000
1100
1100
Figure 21. IF/2 Spurious vs. RF Frequency
–20
–40°C
+25°C
+85°C
–30
33
IF/3 SPURIOUS (dBc)
32
INPUT IP3 (dBm)
500
RF FREQUENCY (MHz)
Figure 18. Power Conversion Loss vs. LO Power
35
400
13361-021
IF/2 SPURIOUS (dBc)
6.5
4.0
–6
–40°C
+25°C
+85°C
–40
7.0
13361-018
CONVERSION LOSS (dB)
7.5
–20
–40°C
+25°C
+85°C
13361-022
8.0
31
30
29
28
–40°C
+25°C
+85°C
–40
–50
–60
–70
27
–80
25
–6
–4
–2
0
2
4
6
8
10
LO POWER (dBm)
13361-019
26
Figure 19. Input IP3 vs. LO Power
60
59
–40°C
+25°C
+85°C
56
55
54
53
52
51
–2
0
2
4
6
LO POWER (dBm)
8
10
13361-020
INPUT IP2 (dBm)
57
–4
400
500
600
700
800
900
1000
RF FREQUENCY (MHz)
Figure 22. IF/3 Spurious vs. RF Frequency
58
50
–6
–90
300
Figure 20. Input IP2 vs. LO Power
Rev. A | Page 10 of 23
Data Sheet
ADL5369
Conversion Loss Distribution, Input IP3 Distribution, and Return Loss
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
80
–5
RF RETURN LOSS (dB)
0
60
40
20
–10
–15
5.8
6.0
6.2
6.4
–25
300
13361-024
0
6.6
CONVERSION LOSS (dB)
400
500
600
700
800
900
1000
1100
13361-027
–20
1200
13361-028
PERCENTAGE (%)
100
RF FREQUENCY (MHz)
Figure 26. RF Port Return Loss, Fixed IF vs. Frequency
Figure 23. Conversion Loss Distribution
0
100
–5
LO RETURN LOSS (dB)
PERCENTAGE (%)
80
60
40
–10
SELECTED
–15
UNSELECTED
–20
–25
20
–30
24
25
26
27
28
29
30
31
32
INPUT IP3 (dBm)
–35
300
13361-023
0
18
25
16
20
14
15
12
100
150
200
IF FREQUENCY (MHz)
250
10
300
CAPACITANCE (pF)
30
13361-026
RESISTANCE (Ω)
35
50
600
700
800
900
1000
1100
Figure 27. LO Return Loss vs. LO Frequency, Selected and Unselected
22
R11 LO1
R11 LO2
C11 (pF )LO1
C11 (pF) LO2 20
10
500
LO FREQUENCY (MHz)
Figure 24. Input IP3 Distribution
40
400
Figure 25. IF Port Return Loss
Rev. A | Page 11 of 23
ADL5369
Data Sheet
Isolation, Leakage, Power Conversion Loss, Input IP3, and SSB Noise Figure
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
70
65
–25
LO TO RF LEAKAGE (dBm)
60
55
50
–35
500
600
700
800
900
1000
1100
RF FREQUENCY (MHz)
–45
393
13361-029
400
2 LO LEAKAGE (dBm)
–55
–60
1193
–30
–35
2LO TO IF
–40
–45
2LO TO RF
500
600
700
800
900
1000
1100
–55
393
13361-030
400
RF FREQUENCY (MHz)
493
593
693
793
893
993
1093
1193
1193
LO FREQUENCY (MHz)
Figure 29. RF to IF Isolation vs. RF Frequency
Figure 32. 2LO Leakage vs. LO Frequency
–20
–40°C
+25°C
+85°C
–25
–10
3LO LEAKAGE (dBm)
–30
–15
–20
–25
–30
–35
3LO TO RF
–40
–45
3LO TO IF
–35
–50
–40
–55
493
593
693
793
893
993
1093
LO FREQUENCY (MHz)
1193
13361-031
LO TO IF LEAKAGE (dBm)
1093
–50
–65
–45
393
993
13361-033
RF TO IF ISOLATION (dBc)
–50
–5
893
–25
–45
0
793
–20
–40
–70
300
693
Figure 31. LO to RF Leakage vs. LO Frequency
–40°C
+25°C
+85°C
–35
593
LO FREQUENCY (MHz)
Figure 28. LO Switch Isolation vs. RF Frequency
–30
493
13361-032
–40
45
40
300
–30
13361-034
LO SWITCH ISOLATION (dB)
–20
–40°C
+25°C
+85°C
Figure 30. LO to IF Leakage vs. LO Frequency
–60
393
493
593
693
793
893
993
1093
LO FREQUENCY (MHz)
Figure 33. 3LO Leakage vs. LO Frequency
Rev. A | Page 12 of 23
Data Sheet
ADL5369
40
17
9
6
5
11
4
9
3
NOISE FIGURE
2
VGS = 0,
VGS = 0,
VGS = 1,
VGS = 1,
1
0
300
400
500
600
700
800
900
1000
30
NOISE FIGURE (dB)
13
CONVERSION LOSS
SSB NOISE FIGURE (dB)
7
RF FREQUENCY (MHz)
Figure 34. Power Conversion Loss and SSB Noise Figure vs. RF Frequency
35
30
0
1
0
1
20
15
10
5
400
500
600
700
800
900
RF FREQUENCY (MHz)
1000
1100
13361-036
INPUT IP3 (dBm)
25
0
300
20
15
5
5
1100
VGS = 0,
VGS = 0,
VGS = 1,
VGS = 1,
25
10
7
0
1
0
1
13361-035
CONVERSION LOSS (dB)
35
15
8
Figure 35. Input IP3 vs. RF Frequency
Rev. A | Page 13 of 23
0
–30
–25
–20
–15
–10
–5
0
BLOCKER POWER (dBm)
Figure 36. SSB Noise Figure vs.10 MHz Offset Blocker Level
5
13361-037
10
ADL5369
Data Sheet
3.3 V PERFORMANCE CHARACTERISTICS
VS = 3.3 V, IS = 56 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
0.08
80
–40°C
+25°C
+85°C
70
–40°C
+25°C
+85°C
60
INPUT IP2 (dBm)
SUPPLY CURRENT (A)
0.07
0.06
0.05
50
40
30
0.04
400
500
600
700
800
900
1000
1100
RF FREQUENCY (MHz)
10
300
13361-038
0.03
300
400
12
600
700
800
900
1000
1100
RF FREQUENCY (MHz)
Figure 40. Input IP2 vs. RF Frequency
Figure 37. Supply Current vs. RF Frequency
14
500
13361-041
20
18
–40°C
+25°C
+85°C
16
–40°C
+25°C
+85°C
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
14
10
8
6
4
12
10
8
6
4
2
500
600
700
800
900
1000
1100
RF FREQUENCY (MHz)
–40°C
+25°C
+85°C
25
20
15
400
500
600
700
800
RF FREQUENCY (MHz)
900
1000
13361-040
INPUT IP3 (dBm)
30
10
300
400
500
600
700
800
900
1000
RF FREQUENCY (MHz)
Figure 41. SSB Noise Figure vs. RF Frequency
Figure 38. Power Conversion Loss vs. RF Frequency
35
0
300
Figure 39. Input IP3 vs. RF Frequency
Rev. A | Page 14 of 23
1100
13361-042
400
13361-039
0
300
2
Data Sheet
ADL5369
UPCONVERSION CHARACTERISTICS
TA = 25°C, fIF = 93 MHz, fLO = 543 MHz, LO power = 0 dBm, RF power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ, and ZO = 50 Ω, unless
otherwise noted.
16
14
25
10
8
6
20
15
10
4
500
600
700
800
RF FREQUENCY (MHz)
900
1000
1100
13361-043
400
Figure 42. Power Conversion Loss vs. RF Frequency, VS = 5 V, Upconversion
Rev. A | Page 15 of 23
0
300
400
500
600
700
800
900
1000
1100
RF FREQUENCY (MHz)
Figure 43. Input IP3 vs. RF Frequency, VS = 5 V, Upconversion
13361-044
5
2
0
300
–40°C
+25°C
+85°C
30
12
INPUT IP3 (dBm)
CONVERSION LOSS (dB)
35
–40°C
+25°C
+85°C
ADL5369
Data Sheet
SPURIOUS PERFORMANCE
All spur tables are (N × fRF) − (M × fLO) and were measured using the standard evaluation board. Mixer spurious products are measured
in dBc from the IF output power level. Data was measured only for frequencies less than 6 GHz. Typical noise floor of the measurement
system = −100 dBm.
5 V Performance
VS = 5 V, IS = 84 mA, TA = 25°C, fRF = 450 MHz, fLO = 543 MHz, LO power = 0 dBm, RF power = 0 dBm, VGS0 = VGS1 = 0 V, R9 = 1.7 kΩ,
and ZO = 50 Ω, unless otherwise noted.
M
0
N
0
1
2
3
4
5
6
7
8
9
10
11
12
−41.537
−71.919
−95.982
