ADM660ARZ

CMOS Switched-Capacitor Voltage Converters ADM660/ADM8660 TYPICAL CIRCUIT CONFIGURATIONS FEATURES ADM660: Inverts or Doubles Input Supply Voltage ADM8660: Inverts Input Supply Voltage 100 mA Output Current Shutdown Function (ADM8660) 2.2 ␮F or 10 ␮F Capacitors 0.3 V Drop at 30 mA Load +1.5 V to +7 V Supply Low Power CMOS: 600 ␮A Quiescent Current Selectable Charge Pump Frequency (25 kHz/120 kHz) Pin Compatible Upgrade for MAX660, MAX665, ICL7660 Available in 16-Lead TSSOP Package +1.5V TO +7V INPUT FC A Frequency Control (FC) input pin is used to select either 25 kHz or 120 kHz charge-pump operation. This is used to optimize capacitor size and quiescent current. With 25 kHz selected, a 10 µF external capacitor is suitable, while with 120 kHz the capacitor may be reduced to 2.2 µF. The oscillator frequency on the ADM660 can also be controlled with an external capacitor connected to the OSC input or by driving this input with an external clock. In applications where a higher supply voltage is desired it is possible to use the ADM660 to double the input voltage. With input voltages from 2.5 V to 7 V, output voltages from 5 V to 14 V are achievable with up to 100 mA output current. The ADM8660 features a low power shutdown (SD) pin instead of the external oscillator (OSC) pin. This can be used to disable the device and reduce the quiescent current to 300 nA. LV GND CAP– OUT C2 +10␮F INVERTED NEGATIVE OUTPUT Voltage Inverter Configuration (ADM660) +1.5V TO +7V INPUT FC ADM8660 V+ CAP+ C1 + 10␮F GENERAL DESCRIPTION Input voltages ranging from +1.5 V to +7 V can be inverted into a negative –1.5 V to –7 V output supply. This inverting scheme is ideal for generating a negative rail in single power supply systems. Only two small external capacitors are needed for the charge pump. Output currents up to 50 mA with greater than 90% efficiency are achievable, while 100 mA achieves greater than 80% efficiency. OSC CAP+ C1 + 10␮F APPLICATIONS Handheld Instruments Portable Computers Remote Data Acquisition Op Amp Power Supplies The ADM660/ADM8660 is a charge-pump voltage converter that can be used to either invert the input supply voltage giving VOUT = –VIN or double it (ADM660 only) giving VOUT = 2 ⫻ VIN. V+ ADM660 LV GND OUT CAP– SHUTDOWN CONTROL C2 +10␮F SD INVERTED NEGATIVE OUTPUT Voltage Inverter Configuration with Shutdown (ADM8660) The ADM660 is a pin compatible upgrade for the MAX660, MAX665, ICL7660, and LTC1046. The ADM660/ADM8660 is available in 8-lead DIP and narrow-body SOIC. The ADM660 is also available in a 16-lead TSSOP package. ADM660/ADM8660 Options Option ADM660 ADM8660 Inverting Mode Doubling Mode External Oscillator Shutdown Package Options R-8 N-8 RU-16 Y Y Y N Y N N Y Y Y Y Y Y N REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/461-3113 © 2011 Analog Devices, Inc. All rights reserved. (V+ = +5 V, C1, C2 = 10␮F,* T = T noted.) ADM660/ADM8660–SPECIFICATIONS otherwise A Parameter Min Typ Unit Test Conditions/Comments 7.0 7.0 7.0 V V V RL = 1 kW Inverting Mode, LV = Open Inverting Mode, LV = GND Doubling Mode, LV = OUT 0.6 2.5 1 4.5 mA mA No Load FC = Open (ADM660), GND (ADM8660) FC = V+, LV = Open 9 9 15 15 16.5 mA W W W IL = 100 mA IL = 100 mA, TA = 25∞C IL = 100 mA, TA = –40∞C to +85∞C 25 120 ±5 ± 25 kHz kHz mA mA FC = Open (ADM660), GND (ADM8660) FC = V+ FC = Open (ADM660), GND (ADM8660) FC = V+ 94 94 % % RL = 1 kW Connected from V+ to OUT RL = 1 kW Connected from V+ to OUT, TA = +25∞C RL = 1 kW Connected from V+ to OUT, TA = –40∞C to +85∞C 3.5 1.5 2.5 Supply Current 100 Charge-Pump Frequency OSC Input Current Power Efficiency (FC = Open) (ADM660) Power Efficiency (FC = Open) (ADM8660) 90 90 Power Efficiency (FC = Open) (ADM8660) 88.5 Power Efficiency (FC = Open) (ADM660) Power Efficiency (FC = Open) (ADM8660) 90 90 Power Efficiency (FC = Open) (ADM8660) 88.5 Power Efficiency (FC = Open) Voltage Conversion Efficiency 99 Shutdown Supply Current, ISHDN Shutdown Input Voltage, VSHDN 2.4 % 81.5 % RL = 500 W Connected from OUT to GND RL = 500 W Connected from OUT to GND, TA = +25∞C RL = 500 W Connected from OUT to GND, TA = –40∞C to +85∞C IL = 100 mA to GND 99.96 % No Load mA V V ms ADM8660, SHDN = V+ SHDN High = Disabled SHDN Low = Enabled IL = 100 mA 93 93 % % % 0.3 5 0.8 Shutdown Exit Time unless Max Input Voltage, V+ Output Current Output Resistance (ADM660) Output Resistance (ADM8660) Output Resistance (ADM8660) MIN to TMAX, 500 *C1 and C2 are low ESR (2000 V (TA = +25°C, unless otherwise noted.) Input Voltage (V+ to GND, GND to OUT) . . . . . . . . +7.5 V LV Input Voltage . . . . . . . . . . (OUT – 0.3 V) to (V+, +0.3 V) FC and OSC Input Voltage . . . . . . . . . . . (OUT – 0.3 V) or (V+, –6 V) to (V+, +0.3 V) OUT, V+ Output Current (Continuous) . . . . . . . . . . . 120 mA Output Short Circuit Duration to GND . . . . . . . . . . . 10 secs Power Dissipation, N-8 . . . . . . . . . . . . . . . . . . . . . . . 625 mW (Derate 8.3 mW/°C above +50°C) θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 120°C/W Power Dissipation, R-8 . . . . . . . . . . . . . . . . . . . . . . . 450 mW (Derate 6 mW/°C above +50°C) θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 170°C/W *This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM660/ADM8660 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. C –3– ADM660/ADM8660 PIN CONNECTIONS 8-Lead FC 1 CAP+ 2 8 V+ ADM660 FC 1 7 OSC CAP+ 2 7 SD TOP VIEW GND 3 (Not to Scale) 6 LV TOP VIEW GND 3 (Not to Scale) 6 LV CAP– 4 8 V+ ADM8660 5 OUT 5 OUT CAP– 4 16-Lead NC 1 16 NC NC 2 15 NC FC 3 ADM660 14 V+ GND 5 TOP VIEW 13 OSC (Not to Scale) 12 LV CAP– 6 11 OUT CAP+ 4 NC 7 10 NC NC 8 9 NC NC = NO CONNECT PIN FUNCTION DESCRIPTIONS Inverter Configuration Doubler Configuration (ADM660 Only) Mnemonic Function Mnemonic Function FC Frequency Control Input for Internal Oscillator and Charge Pump. With FC = Open (ADM660) or connected to GND (ADM8660), fCP = 25 kHz; with FC = V+, fCP = 120 kHz. FC Frequency Control Input for Internal Oscillator and Charge Pump. With FC = Open, fCP = 25 kHz; with FC = V+, fCP = 120 kHz. CAP+ Positive Charge-Pump Capacitor Terminal. CAP+ Positive Charge-Pump Capacitor Terminal. GND Positive Input Supply. GND Power Supply Ground. CAP– Negative Charge-Pump Capacitor Terminal. CAP– Negative Charge-Pump Capacitor Terminal. OUT Output, Negative Voltage. OUT Ground. LV Low Voltage Operation Input. Connect to GND when input voltage is less than 3.5 V. Above 3.5 V, LV may be connected to GND or left unconnected. LV Low Voltage Operation Input. Connect to OUT. OSC Must be left unconnected in this mode. V+ Doubled Positive Output. OSC ADM660: Oscillator Control Input. OSC is connected to an internal 15 pF capacitor. An external capacitor may be connected to slow the oscillator. An external oscillator may also be used to overdrive OSC. The charge-pump frequency is equal to 1/2 the oscillator frequency. SD ADM8660: Shutdown Control Input. This input, when high, is used to disable the charge pump thereby reducing the power consumption. V+ Positive Power Supply Input. –4– REV. C Typical Performance Characteristics–ADM660/ADM8660 100 3.0 IL = 10mA 90 VOLTAGE DOUBLER LV = OUT POWER EFFICIENCY – % SUPPLY CURRENT – mA 2.5 2.0 1.5 1.0 LV = GND 70 60 IL = 50mA 50 IL = 80mA 0.5 40 LV = OPEN 30 0 1.5 3.5 7 5.5 SUPPLY VOLTAGE – Volts .5 TPC 1. Power Supply Current vs. Voltage 1k 10k 100k CHARGE-PUMP FREQUENCY – Hz 3.5 3.0 EFFICIENCY 40 –4.2 VOUT EFFICIENCY – % 60 –3.8 SUPPLY CURRENT – mA 80 –3.4 2.5 2.0 LV = GND VOLTAGE DOUBLER 1.5 1.0 20 –4.6 0.5 0 20 40 60 LOAD CURRENT – mA 0 0 100 –5.0 80 TPC 2. Output Voltage and Efficiency vs. Load Current 100 10 CHARGE-PUMP FREQUENCY – kHz 1 1000 120 V+ = +6.5V 100 1.2 V+ = +5.5V V+ = +4.5V V+ = +3.5V V+ = +2.5V EFFICIENCY – % OUTPUT VOLTAGE DROP FROM SUPPLY VOLTAGE – Volts LV = GND VOLTAGE INVERTER TPC 5. Power Supply Current vs. Charge-Pump Frequency 1.6 V+ = +4.5V 0.8 V+ = +1.5V V+ = +5.5V 80 V+ = +3.5V 60 V+ = +1.5V V+ = +2.5V 40 0.4 20 0 0 20 40 60 LOAD CURRENT – mA 80 0 100 TPC 3. Output Voltage Drop vs. Load Current REV. C 1M TPC 4. Efficiency vs. Charge-Pump Frequency 100 –3.0 OUTPUT VOLTAGE – Volts IL = 1mA 80 0 20 40 60 LOAD CURRENT – mA 80 100 TPC 6. Power Efficiency vs. Load Current –5– ADM660/ADM8660 35 5.0 LOAD = 1mA CHARGE-PUMP FREQUENCY – kHz 4.5 LOAD = 10mA OUTPUT VOLTAGE – Volts 4.0 3.5 LOAD = 50mA 3.0 2.5 2.0 LOAD = 80mA 1.5 1.0 30 25 20 LV = GND FC = OPEN C1, C2 = 10␮F 15 10 5 0.5 0 1 10 100 CHARGE-PUMP FREQUENCY – kHz 0 –40 1000 TPC 7. Output Voltage vs. Charge-Pump Frequency CHARGE-PUMP FREQUENCY – kHz OUTPUT SOURCE RESISTANCE – ⍀ 20 15 10 5 2.5 3.5 4.5 SUPPLY VOLTAGE – Volts 5.5 60 80 FC = V+ LV = GND 100 10 FC = OPEN LV = GND 1 0.1 1 6.5 TPC 8. Output Source Resistance vs. Supply Voltage 10 100 CAPACITANCE – pF 1k TPC 11. Charge-Pump Frequency vs. External Capacitance 30 140 LV = GND LV = GND CHARGE-PUMP FREQUENCY – kHz CHARGE-PUMP FREQUENCY – kHz 20 40 TEMPERATURE – C 1k 25 LV = OPEN 20 FC = OPEN OSC = OPEN C1, C2 = 10␮F 10 0 1.5 0 TPC 10. Charge-Pump Frequency vs. Temperature 30 0 1.5 –20 2.5 3.5 4.5 5.5 SUPPLY VOLTAGE – Volts 120 100 LV = OPEN 80 60 20 0 3 6.5 TPC 9. Charge-Pump Frequency vs. Supply Voltage FC = V+ OSC = OPEN C1,C2 = 2.2␮F 40 3.5 4 4.5 5 5.5 6 SUPPLY VOLTAGE – Volts 6.5 7 TPC 12. Charge-Pump Frequency vs. Supply Voltage –6– REV. C ADM660/ADM8660 160 60 OUTPUT SOURCE RESISTANCE – ⍀ CHARGE-PUMP FREQUENCY – kHz 140 120 100 80 LV = GND FC = V+ C1, C2 = 2.2␮F 60 40 20 0 –40 –20 0 20 40 60 TEMPERATURE – C 80 50 40 30 V+ = +1.5V 20 V+ = +3V 10 V+ = +5V 0 –40 100 TPC 13. Charge-Pump Frequency vs. Temperature –20 0 20 40 60 TEMPERATURE – C 80 100 TPC 14. Output Resistance vs. Temperature GENERAL INFORMATION Switched Capacitor Theory of Operation The ADM660/ADM8660 is a switched capacitor voltage converter that can be used to invert the input supply voltage. The ADM660 can also be used in a voltage doubling mode. The voltage conversion task is achieved using a switched capacitor technique using two external charge storage capacitors. An onboard oscillator and switching network transfers charge between the charge storage capacitors. The basic principle behind the voltage conversion scheme is illustrated in Figures 1 and 2. As already described, the charge pump on the ADM660/ADM8660 uses a switched capacitor technique in order to invert or double the input supply voltage. Basic switched capacitor theory is discussed below. CAP+ S1 V+ A switched capacitor building block is illustrated in Figure 3. With the switch in position A, capacitor C1 will charge to voltage V1. The total charge stored on C1 is q1 = C1V1. The switch is then flipped to position B discharging C1 to voltage V2. The charge remaining on C1 is q2 = C1V2. The charge transferred to the output V2 is, therefore, the difference between q1 and q2, so ∆q = q1–q2 = C1 (V1–V2). S3 + C1 S4 S2 + CAP– Φ1 OUT = –V+ C2 Φ2 +2 OSCILLATOR V1 A B V2 C2 C1 Figure 1. Voltage Inversion Principle CAP+ S1 V+ Figure 3. Switched Capacitor Building Block S3 + + C1 S4 S2 VOUT = 2V+ As the switch is toggled between A and B at a frequency f, the charge transfer per unit time or current is: C2 V+ CAP– Φ1 I = f (∆q) = f (C1)(V1 – V 2) Φ2 +2 OSCILLATOR Therefore, I = (V1 – V 2)/(1 / fC1) = (V1 – V 2)/(R EQ ) Figure 2. Voltage Doubling Principle Figure 1 shows the voltage inverting configuration, while Figure 2 shows the configuration for voltage doubling. An oscillator generating antiphase signals φ1 and φ2 controls switches S1, S2, and S3, S4. During φ1, switches S1 and S2 are closed charging C1 up to the voltage at V+. During φ2, S1 and S2 open and S3 and S4 close. With the voltage inverter configuration during φ2, the positive terminal of C1 is connected to GND via S3 and the negative terminal of C1 connects to VOUT via S4. The net result is voltage inversion at VOUT wrt GND. Charge on C1 is transferred to C2 during φ2. Capacitor C2 maintains this voltage during φ1. The charge transfer efficiency depends on the onresistance of the switches, the frequency at which they are being switched, and also on the equivalent series resistance (ESR) of the external capacitors. The reason for this is explained in the following section. For maximum efficiency, capacitors with low ESR are, therefore, recommended. where REQ = 1/fC1 The switched capacitor may, therefore, be replaced by an equivalent resistance whose value is dependent on both the capacitor size and the switching frequency. This explains why lower capacitor values may be used with higher switching frequencies. It should be remembered that as the switching frequency is increased the power consumption will increase due to some charge being lost at each switching cycle. As a result, at high frequencies, the power efficiency starts decreasing. Other losses include the resistance of the internal switches and the equivalent series resistance (ESR) of the charge storage capacitors. REQ V2 V1 C2 RL REQ = 1/fC1 The voltage doubling configuration reverses some of the connections, but the same principle applies. REV. C RL Figure 4. Switched Capacitor Equivalent Circuit –7– ADM660/ADM8660 Inverting Negative Voltage Generator Table II. ADM8660 Charge-Pump Frequency Selection Figures 5 and 6 show the ADM660/ADM8660 configured to generate a negative output voltage. Input supply voltages from 1.5 V up to 7 V are allowable. For supply voltage less than 3 V, LV must be connected to GND. This bypasses the internal regulator circuitry and gives best performance in low voltage applications. With supply voltages greater than 3 V, LV may be either connected to GND or left open. Leaving it open facilitates direct substitution for the ICL7660. FC OSC Charge Pump GND V+ GND or V+ GND Open Open Ext Cap Ext CLK 25 kHz 10 µF 120 kHz 2.2 µF See Typical Characteristics Ext CLK Frequency/2 +1.5V TO +7V INPUT +1.5V TO +7V INPUT FC ADM660 FC V+ GND OUT C2 CMOS GATE V+ LV CAP– INVERTED NEGATIVE OUTPUT CLK OSC OSC GND C1 LV CAP– ADM660 ADM8660 CAP+ + OSC CAP+ C1 + 10␮F C1, C2 INVERTED NEGATIVE OUTPUT OUT + C2 +10␮F Figure 7. ADM660/ADM8660 External Oscillator Figure 5. ADM660 Voltage Inverter Configuration Voltage Doubling Configuration Figure 8 shows the ADM660 configured to generate increased output voltages. As in the inverting mode, only two external capacitors are required. The doubling function is achieved by reversing some connections to the device. The input voltage is applied to the GND pin and V+ is used as the output. Input voltages from 2.5 V to 7 V are allowable. In this configuration, pins LV, OUT must be connected to GND. +1.5V TO +7V INPUT ADM8660 V+ CAP+ C1 + GND 10␮F LV CAP– SHUTDOWN CONTROL OUT C2 +10␮F SD INVERTED NEGATIVE OUTPUT The unloaded output voltage in this configuration is 2 (VIN). Output resistance and ripple are similar to the voltage inverting configuration. Figure 6. ADM8660 Voltage Inverter Configuration OSCILLATOR FREQUENCY Note that the ADM8660 cannot be used in the voltage doubling configuration. The internal charge-pump frequency may be selected to be either 25 kHz or 120 kHz using the Frequency Control (FC) input. With FC unconnected (ADM660) or connected to GND (ADM8660), the internal charge pump runs at 25 kHz while, if FC is connected to V+, the frequency is increased by a factor of five. Increasing the frequency allows smaller capacitors to be used for equivalent performance or, if the capacitor size is unchanged, it results in lower output impedance and ripple. FC +2.5V TO +7V INPUT Open Open Ext Cap Ext CLK 25 kHz 10 µF 120 kHz 2.2 µF See Typical Characteristics Ext CLK Frequency/2 GND CAP– LV OUT Capacitor Selection The optimum capacitor value selection depends the charge-pump frequency. With 25 kHz selected, 10 µF capacitors are recommended, while with 120 kHz selected, 2.2 µF capacitors may be used. Other frequencies allow other capacitor values to be used. For maximum efficiency in all cases, it is recommended that capacitors with low ESR are used for the charge-pump. Low ESR capacitors give both the lowest output resistance and lowest ripple voltage. High output resistance degrades the overall power efficiency and causes voltage drops, especially at high output Table I. ADM660 Charge-Pump Frequency Selection Open V+ Open or V+ Open 10␮F The ADM8660 contains a shutdown input that can be used to disable the device and thus reduce the power consumption. A logic high level on the SD input shuts the device down reducing the quiescent current to 0.3 µA. During shutdown, the output voltage goes to 0 V. Therefore, ground referenced loads are not powered during this state. When exiting shutdown, it takes several cycles (approximately 500 µs) for the charge pump to reach its final value. If the shutdown function is not being used, then SD should be hardwired to GND. Note that overdriving is permitted only in the voltage inverter configuration. Charge Pump 10␮F DOUBLED POSITIVE OUTPUT Shutdown Input If an external clock is used to overdrive the oscillator, its levels should swing to within 100 mV of V+ and GND. A CMOS driver is, therefore, suitable. When OSC is overdriven, FC has no effect but LV must be grounded. OSC CAP+ V+ OSC Figure 8. Voltage Doubler Configuration If a charge-pump frequency other than the two fixed values is desired, this is made possible by the OSC input, which can either have a capacitor connected to it or be overdriven by an external clock. Refer to the Typical Performance Characteristics, which shows the variation in charge-pump frequency versus capacitor size. The charge-pump frequency is one-half the oscillator frequency applied to the OSC pin. FC + ADM660 + FC C1, C2 –8– REV. C ADM660/ADM8660 current levels. The ADM660/ADM8660 is tested using low ESR, 10 µF, capacitors for both C1 and C2. Smaller values of C1 increase the output resistance, while increasing C1 will reduce the output resistance. The output resistance is also dependent on the internal switches on resistance as well as the capacitors ESR, so the effect of increasing C1 becomes negligible past a certain point. Capacitor C2 The output capacitor size C2 affects the output ripple. Increasing the capacitor size reduces the peak-to-peak ripple. The ESR affects both the output impedance and the output ripple. Reducing the ESR reduces the output impedance and ripple. For convenience it is recommended that both C1 and C2 be the same value. Figure 9 shows how the output resistance varies with oscillator frequency for three different capacitor values. At low oscillator frequencies, the output impedance is dominated by the 1/fC term. This explains why the output impedance is higher for smaller capacitance values. At high oscillator frequencies, the 1/fC term becomes insignificant and the output impedance is dominated by the internal switches on resistance. From an output impedance viewpoint, therefore, there is no benefit to be gained from using excessively large capacitors. Table III. Capacitor Selection OUTPUT RESISTANCE – ⍀ 400 300 C1 = C2 = 1␮F 200 C1 = C2 = 10␮F 10 µF 2.2 µF Bypass Capacitor 100 The ac impedance of the ADM660/ADM8660 may be reduced by using a bypass capacitor on the input supply. This capacitor should be connected between the input supply and GND. It will provide instantaneous current surges as required. Suitable capacitors of 0.1 µF or greater may be used. 100 Figure 9. Output Impedance vs. Oscillator Frequency REV. C 25 kHz 120 kHz While higher switching frequencies allow smaller capacitors to be used for equivalent performance, or improved performance with the same capacitors, there is a trade-off to consider. As the oscillator frequency is increased, the quiescent current increases. This happens as a result of a finite charge being lost at each switching cycle. The charge loss per unit cycle at very high frequencies can be significant, thereby reducing the power efficiency. Since the power efficiency is also degraded at low oscillator frequencies due to an increase in output impedance, this means that there is an optimum frequency band for maximum power transfer. Refer to the Typical Performance Characteristics section. C1 = C2 = 2.2␮F 1 10 OSCILLATOR FREQUENCY – kHz Capacitor C1, C2 Power Efficiency and Oscillator Frequency Trade-Off 500 0 0.1 Charge-Pump Frequency –9– ADM660/ADM8660 OUTLINE DIMENSIONS 0.400 (10.16) 0.365 (9.27) 0.355 (9.02) 8 5 1 4 0.280 (7.11) 0.250 (6.35) 0.240 (6.10) 0.100 (2.54) BSC 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.060 (1.52) MAX 0.210 (5.33) MAX 0.015 (0.38) MIN 0.150 (3.81) 0.130 (3.30) 0.115 (2.92) SEATING PLANE 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.195 (4.95) 0.130 (3.30) 0.115 (2.92) 0.015 (0.38) GAUGE PLANE 0.014 (0.36) 0.010 (0.25) 0.008 (0.20) 0.430 (10.92) MAX 0.005 (0.13) MIN 0.070 (1.78) 0.060 (1.52) 0.045 (1.14) 070606-A COMPLIANT TO JEDEC STANDARDS MS-001 CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS. Figure 10. 8-Lead Plastic Dual In-Line Package [PDIP] Narrow Body (N-8) Dimensions shown in inches and (millimeters) 5.00 (0.1968) 4.80 (0.1890) 1 5 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY 0.10 SEATING PLANE 6.20 (0.2441) 5.80 (0.2284) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) 0.50 (0.0196) 0.25 (0.0099) 45° 8° 0° 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 012407-A 8 4.00 (0.1574) 3.80 (0.1497) Figure 11. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) –10– REV. C ADM660/ADM8660 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 1 8 PIN 1 1.20 MAX 0.15 0.05 0.20 0.09 0.30 0.19 0.65 BSC COPLANARITY 0.10 SEATING PLANE 8° 0° 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 12. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters ORDERING GUIDE Model1 ADM660ANZ ADM660ARZ ADM660ARZ-REEL ADM660ARUZ ADM660ARUZ-REEL ADM660ARUZ-REEL7 ADM8660ANZ ADM8660ARZ ADM8660ARZ-REEL 1 Temperature Range −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C Package Description 8-Lead Plastic Dual In-Line Package [PDIP] 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 8-Lead Plastic Dual In-Line Package [PDIP] 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] Z = RoHS Compliant Part REVISION HISTORY 4/11—Rev. B to Rev. C Changes to Ordering Guide .......................................................... 11 12/02—Rev. A to Rev. B Renumbered TPCs and Figures ........................................ Universal Edits to Specifications ...................................................................... 2 Updated Absolute Maximum Ratings ........................................... 3 Updated Outline Dimensions ....................................................... 10 ©2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D00082-0-4/11(C) REV. C –11– Package Option N-8 R-8 R-8 RU-16 RU-16 RU-16 N-8 R-8 R-8