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ADP195ACPZ-R7

ADP195ACPZ-R7

  • 厂商:

    AD(亚德诺)

  • 封装:

    UDFN6

  • 描述:

    IC PWR SWITCH P-CHAN 1:1 6LFCSP

  • 数据手册
  • 价格&库存
ADP195ACPZ-R7 数据手册
FEATURES Ultralow on resistance (RDSON) 50 mΩ @ 3.6 V 55 mΩ @ 2.5 V 65 mΩ @ 1.8 V 100 mΩ @ 1.2 V Input voltage range: 1.1 V to 3.6 V 1.1 A maximum continuous operating current Low enable control logic threshold can be operated from 1.2 V to 3.3 V Low 1 μA (typical) ground current @ 1.8 V Low 4 μA (maximum) reverse current @ 3.6 V Ultralow shutdown current: 0.7 μA (typical) @ 1.8 V Reverse current blocking Tiny 4-ball wafer level chip scale package (WLCSP) 1.0 mm × 1.0 mm, 0.5 mm pitch Tiny 6-lead lead frame chip scale package (LFCSP) 2.0 mm × 2.0 mm × 0.55 mm, 0.65 mm pitch APPLICATIONS Mobile phones Digital cameras and audio devices GPS devices Personal media players Portable and battery-powered equipment TYPICAL APPLICATIONS CIRCUIT REVERSE POLARITY PROTECTION ADP195 VIN + – VOUT GND ON EN OFF LEVEL SHIFT AND SLEW RATE CONTROL LOAD 08679-001 Data Sheet Logic Controlled, High-Side Power Switch with Reverse Current Blocking ADP195 Figure 1. GENERAL DESCRIPTION The ADP195 is a high-side load switch designed for operation between 1.1 V to 3.6 V and protected against reverse current flow from output to input. This load switch provides power domain isolation helping extended power domain isolation. The device contains a low on-resistance, P-channel MOSFET that supports over 1.1 A of continuous current and minimizes power loss. The low 1 μA of quiescent current and ultralow shutdown current make the ADP195 ideal for battery-operated portable equipment. The built-in level shifter for enable logic makes the ADP195 compatible with many processors and GPIO controllers. In addition to operating performance, the ADP195 occupies minimal printed circuit board (PCB) space with an area of less than 1.0 mm2 and a height of 0.60 mm. It is available in an ultrasmall 1 mm × 1 mm, 4-ball, 0.5 mm pitch WLCSP. A 6-lead 2 mm × 2 mm × 0.55 mm, 0.65 mm pitch LFCSP is also available. Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010–2012 Analog Devices, Inc. All rights reserved. ADP195 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1  Pin Configurations and Function Descriptions ............................5  Applications....................................................................................... 1  Typical Performance Characteristics ..............................................6  Typical Applications Circuit............................................................ 1  Theory of Operation .........................................................................9  General Description ......................................................................... 1  Applications Information .............................................................. 10  Revision History ............................................................................... 2  Ground Current.......................................................................... 10  Specifications..................................................................................... 3  Enable Feature ............................................................................ 10  Timing Diagram ........................................................................... 3  Timing ......................................................................................... 11  Absolute Maximum Ratings............................................................ 4  Outline Dimensions ....................................................................... 12  Thermal Data ................................................................................ 4  Ordering Guide .......................................................................... 12  Thermal Resistance ...................................................................... 4  ESD Caution.................................................................................. 4  REVISION HISTORY 1/12—Rev. B to Rev. C Changes to General Description Section ...................................... 1 Changes to Table 2............................................................................ 4 Updated Outline Dimensions ....................................................... 12 2/11—Rev. A to Rev. B Added 6-Lead LFCSP.........................................................Universal Changes to Features, Applications, and General Description Sections .............................................................................................. 1 Added VIN to VOUT Resistance, LFCSP Parameter, Table 1.......... 3 Changes to Table 2 and Table 3....................................................... 4 Added Figure 4; Renumbered Sequentially .................................. 5 Added Table 5; Renumbered Sequentially .................................... 5 Added Figure 6, Figure 8, and Figure 10 ....................................... 6 Changes to Theory of Operation Section...................................... 9 Updated Outline Dimensions ....................................................... 12 Changes to Ordering Guide .......................................................... 12 7/10—Rev. 0 to Rev. A Changes to Features and Applications Sections ............................1 Changed 10 μA Ground Current to 1 μA Ground Current in General Description Section............................................................1 Changes to Table 2 and Thermal Resistance Section ...................4 Added Thermal Data Section .........................................................4 3/10—Revision 0: Initial Version Rev. C | Page 2 of 12 Data Sheet ADP195 SPECIFICATIONS VIN = 1.8 V, VEN = VIN, IOUT = 200 mA, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT VOLTAGE RANGE EN INPUT EN Input Threshold Symbol VIN Conditions TJ = −40°C to +85°C Min 1.1 VIH 0.29 0.45 EN Input Pull-Down Current VIN Shutdown Current REVERSE BLOCKING VOUT Current Hysteresis CURRENT Ground Current IEN 1.1 V ≤ VIN < 1.8 V, TJ = −40°C to +85°C 1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C VIN = 1.8 V VEN = 0 V, VIN = 0 V, VOUT = 3.6 V Off State Current VIN to VOUT RESISTANCE WLCSP VEN = 0 V, VIN = 0 V, VOUT = 3.6 V |VIN − VOUT| IGND VOUT = 0, includes VEN pull-down and reverse blocking bias current, VIN = 3.6 V, TJ = −40°C to +85°C VOUT = 0, includes VEN pull-down and reverse blocking bias current, VIN = 1.8 V VEN = GND (includes reverse blocking bias current), VOUT = 0 V VEN = GND, TJ = −40°C to +85°C, VOUT = 0 V IOFF Max 3.6 Unit V 1.0 1.2 V 500 −10 nA nA 4 75 μA mV 10 1 μA μA 0.7 5 μA μA RDSON LFCSP VOUT TURN-ON DELAY TIME Turn-On Delay Time Typ tON_DLY VIN = 3.6 V, ILOAD = 200 mA, VEN = 3.6 V VIN = 2.5 V, ILOAD = 200 mA, VEN = 2.5 V VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.8 V VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.8 V, TJ = −40°C to +85°C VIN = 1.5 V, ILOAD = 200 mA, VEN = 1.5 V VIN = 1.2 V, ILOAD = 200 mA, VEN = 1.2 V VIN = 3.6 V, ILOAD = 200 mA, VEN = 3.6 V VIN = 2.5 V, ILOAD = 200 mA, VEN = 2.5 V VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.8 V VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.8 V, TJ = −40°C to +85°C VIN = 1.5 V, ILOAD = 200 mA, VEN = 1.5 V VIN = 1.2 V, ILOAD = 200 mA, VEN = 1.2 V 0.050 0.055 0.065 0.097 0.125 Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω VIN = 1.8 V, ILOAD = 200 mA, VEN = 1.8 V, CLOAD = 1 μF VIN = 3.6 V, ILOAD = 200 mA, VEN = 3.6 V, CLOAD = 1 μF 5 1.5 μs μs TIMING DIAGRAM VEN TURN-ON DELAY 90% TURN-OFF DELAY VOUT TURN-ON RISE TURN-OFF FALL Figure 2. Timing Diagram Rev. C | Page 3 of 12 08679-002 10% 0.095 0.075 0.100 0.070 0.078 0.090 0.130 ADP195 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2. Parameter VIN, VIN1, VIN2 to GND VOUT, VOUT1, VOUT2 to GND EN to GND Continuous Drain Current TA = 25°C TA = 85°C Continuous Diode Current Storage Temperature Range Operating Junction Temperature Range Operating Ambient Temperature Range Soldering Conditions Rating −0.3 V to +4.0 V −0.3 V to +4.0 V −0.3 V to +4.0 V ±2 A ±1.1 A −50 mA −65°C to +150°C −40°C to +125°C −40°C to +85°C JEDEC J-STD-020 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL DATA Absolute maximum ratings apply individually only, not in combination. The ADP195 can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that TJ is within the specified temperature limits. In applications with high power dissipation and poor PCB thermal resistance, the maximum ambient temperature may need to be derated. In applications with moderate power dissipation and low PCB thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. The junction temperature (TJ) of the device is dependent on the ambient temperature (TA), the power dissipation of the device (PD), and the junction-to-ambient thermal resistance of the package (θJA). Maximum junction temperature (TJ) is calculated from the ambient temperature (TA) and power dissipation (PD) using the formula Junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board design is required. The value of θJA may vary, depending on PCB material, layout, and environmental conditions. The specified values of θJA are based on a 4-layer, 4 inch × 3 inch PCB. See JESD51-7 and JESD51-9 for detailed information regarding board construction. For additional information, see the AN-617 application note, MicroCSPTM Wafer Level Chip Scale Package. ΨJB is the junction-to-board thermal characterization parameter with units of °C/W. ΨJB of the package is based on modeling and calculation using a 4-layer board. The JESD51-12 document, Guidelines for Reporting and Using Electronic Package Thermal Information, states that thermal characterization parameters are not the same as thermal resistances. ΨJB measures the component power flowing through multiple thermal paths rather than through a single path, as in thermal resistance (θJB). Therefore, ΨJB thermal paths include convection from the top of the package as well as radiation from the package, factors that make ΨJB more useful in real-world applications. Maximum junction temperature (TJ) is calculated from the board temperature (TB) and the power dissipation (PD) using the formula TJ = TB + (PD × ΨJB) See JESD51-8, JESD51-9, and JESD51-12 for more detailed information about ΨJB. THERMAL RESISTANCE θJA and ΨJB are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance Package Type 4-Ball, 0.5 mm Pitch WLCSP 6-Lead, 2 mm × 2 mm LFCSP ESD CAUTION TJ = TA + (PD × θJA) Rev. C | Page 4 of 12 θJA 260 72.1 ΨJB 58.4 24.0 Unit °C/W °C/W Data Sheet ADP195 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS 2 VIN VOUT VOUT1 1 A VOUT2 2 TOP VIEW (Not to Scale) EN GND GND 3 08679-003 B 6 VIN1 ADP195 TOP VIEW (Not to Scale) 5 VIN2 4 EN 08679-104 1 NOTES 1. THE EXPOSED PAD MUST BE CONNECTED TO GND. Figure 3. 4-Ball WLCSP Pin Configuration Figure 4. 6-Lead LFCSP Pin Configuration Table 4. WLCSP Pin Function Descriptions Pin No. A1 A2 B1 B2 Mnemonic VIN VOUT EN GND Description Input Voltage. Output Voltage. Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch. Ground. Table 5. LFCSP Pin Function Descriptions Pin No. 1 2 3 4 5 6 EP Mnemonic VOUT1 VOUT2 GND EN VIN2 VIN1 EP Description Output Voltage. Connect VOUT1 and VOUT2 together. Output Voltage. Connect VOUT1 and VOUT2 together. Ground. Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch. Input Voltage. Connect VIN1 and VIN2 together. Input Voltage. Connect VIN1 and VIN2 together. The exposed pad must be connected to ground. Rev. C | Page 5 of 12 ADP195 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS VIN = 1.8 V, VEN = VIN, CIN = COUT = 1 μF, TA = 25°C, unless otherwise noted. 0.10 0.16 IOUT = 10mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA 0.14 0.12 RDSON (Ω) RDSON (Ω) 0.08 0.06 0.04 0.10 0.08 IOUT = 10mA IOUT = 50mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA 0.06 0.04 0.02 –40 0 25 85 0 1.2 08679-004 0 0.02 125 TEMPERATURE (°C) 0.12 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 VIN = 1.2 VIN = 1.6 VIN = 1.8 VIN = 2.2 VIN = 2.4 VIN = 2.6 VIN = 3.0 VIN = 3.6 0.11 0.10 0.10 0.09 VOLTAGE DROP (V) 0.08 RDSON (Ω) 1.8 Figure 8. RDSON vs. Input Voltage (VIN), LFCSP 0.12 0.04 1.6 VIN (V) Figure 5. RDSON vs. Temperature, WLCSP 0.06 1.4 08679-108 0.12 IOUT = 10mA IOUT = 50mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.02 –5°C 25°C 85°C 0 08679-106 –40°C 125°C TEMPERATURE (°C) 0 0.16 500 600 700 800 900 1000 0.16 IOUT = 10mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA 0.14 VIN = 1.2 VIN = 1.6 VIN = 1.8 VIN = 2.0 VIN = 2.4 VIN = 2.8 VIN = 3.0 VIN = 3.2 VIN = 3.4 VIN = 3.6 0.12 VOLTAGE DROP (V) 0.12 0.10 0.08 0.06 0.10 0.08 0.06 0.04 0.04 0.02 0.02 1.6 2.0 2.4 2.8 3.2 VIN (V) 3.6 08679-005 RDSON (Ω) 400 Figure 9. Voltage Drop vs. Load Current, WLCSP 0.14 0 1.2 300 0 0 200 400 600 800 LOAD (mA) Figure 10. Voltage Drop vs. Load Current, LFCSP Figure 7. RDSON vs. Input Voltage (VIN), WLCSP Rev. C | Page 6 of 12 1000 08679-110 0.18 200 LOAD (mA) Figure 6. RDSON vs. Temperature, LFCSP 0.20 100 08679-006 0.01 0 Data Sheet ADP195 VEN VEN VOUT 1 1 VOUT 2 2 LOAD CURRENT LOAD CURRENT CH2 2V BW M4µs T 10% A CH1 2.32V 08679-007 CH1 2V BW CH3 1A Ω BW CH1 2V BW CH2 1V CH3 100mA Ω BW Figure 11. Typical Rise Time and Inrush Current, VIN = 3.6 V, No Load 6 5 GROUND CURRENT (µA) VOUT 2 LOAD CURRENT A CH1 2.32V IOUT = 10mA IOUT = 100mA IOUT = 200mA IOUT = 300mA IOUT = 500mA 4 3 2 BW M4µs T 10% A CH1 2.32V 0 20 16 GROUND CURRENT (µA) 1 VOUT 2 85 125 IOUT = 10mA IOUT = 100mA IOUT = 200mA IOUT = 500mA IOUT = 1000mA 12 8 4 LOAD CURRENT A CH1 2.32V 0 1.2 08679-010 M10µs T 10% 25 Figure 15. Ground Current vs. Temperature VEN BW 0 TEMPERATURE (°C) Figure 12. Typical Rise Time and Inrush Current, VIN = 3.6 V, Load = 200 mA CH1 2V BW CH2 1V CH3 100mA Ω BW –40 1.6 2.0 2.4 2.8 3.2 VIN (V) Figure 13. Typical Rise Time and Inrush Current, VIN = 1.2 V, No Load Figure 16. Ground Current vs. Input Voltage (VIN) Rev. C | Page 7 of 12 3.6 08679-012 CH2 2V 08679-009 CH1 2V BW CH3 1A Ω BW 08679-008 1 3 3 M10µs T 10% Figure 14. Typical Rise Time and Inrush Current, VIN = 1.2 V, Load = 200 mA VEN 1 BW 08679-011 3 3 ADP195 SHUTDOWN CURRENT (µA) 4 3 9 VIN = 1.2V VIN = 1.4V VIN = 2.0V VIN = 2.4V VIN = 2.8V VIN = 3.2V VIN = 3.4V VIN = 3.6V 8 SHUTDOWN CURRENT (µA) 5 Data Sheet 2 1 7 6 5 VIN = 1.2V VIN = 1.4V VIN = 1.6V VIN = 1.8V VIN = 2.0V VIN = 2.2V VIN = 2.6V VIN = 3.0V VIN = 3.2V VIN = 3.6V 4 3 2 0 –15 10 35 60 85 110 TEMPERATURE (°C) 0 –40 08679-013 2.0 4.0 VIN = 1.2V VIN = 1.4V VIN = 2.0V VIN = 2.4V VIN = 2.8V VIN = 3.2V VIN = 3.4V VIN = 3.6V 1.5 1.0 0.5 85 110 VIN = 2.8V VIN = 3.2V VIN = 3.4V VIN = 3.6V 3.0 2.5 2.0 1.5 1.0 0.5 0 –0.5 –40 60 VIN = 1.2V VIN = 1.4V VIN = 2.0V VIN = 2.4V 3.5 SHUTDOWN CURRENT (µA) 2.5 35 Figure 19. Reverse Output Shutdown Current vs. Temperature –15 10 35 60 85 110 TEMPERATURE (°C) 08679-014 SHUTDOWN CURRENT (µA) 3.0 10 TEMPERATURE (°C) Figure 17. Shutdown Current vs. Temperature 3.5 –15 0 –40 –15 10 35 60 85 110 TEMPERATURE (°C) Figure 20. Reverse Shutdown Current vs. Temperature Figure 18. Reverse Input Shutdown Current vs. Temperature Rev. C | Page 8 of 12 08679-016 –1 –40 08679-015 1 Data Sheet ADP195 THEORY OF OPERATION ADP195 quiescent current device with a nominal 4 MΩ pull-down resistor on its enable pin (EN). REVERSE POLARITY PROTECTION VIN VOUT The reverse current protection circuitry prevents current flow backward through the ADP195 when the output voltage is greater than the input voltage. A comparator senses the difference between the input and output voltages. When the difference between the input voltage and output voltage exceeds 75 mV, the body of the pFET is switched to VOUT and is turned off or opened; that is, the gate is connected to VOUT. GND LEVEL SHIFT AND SLEW RATE CONTROL 08679-025 EN Figure 21. Functional Block Diagram The ADP195 is a high-side PMOS load switch. It is designed for supply operation between 1.1 V to 3.6 V. The PMOS load switch is designed for low on resistance, 65 mΩ at VIN = 1.8 V and supports greater than 1 A of continuous current. It is a low The packaging is a space-saving 1.0 mm × 1.0 mm, 4-ball WLCSP. The ADP195 is also available in a 2 mm × 2 mm × 0.55 mm, 0.65 mm pitch LFCSP. Rev. C | Page 9 of 12 ADP195 Data Sheet APPLICATIONS INFORMATION GROUND CURRENT ENABLE FEATURE The major source for ground current in the ADP195 is an internal 4 MΩ pull-down on the enable pin. Figure 22 shows the typical ground current when VEN = VIN and varies from 1.2 V to 3.6 V. The ADP195 uses the EN pin to enable and disable the VOUT pin under normal operating conditions. As shown in Figure 24, when a rising voltage on VEN crosses the active threshold, VOUT turns on. When a falling voltage on VEN crosses the inactive threshold, VOUT turns off. 10 VIN = 1.2V VIN = 1.6V VIN = 2.0V VIN = 2.4V 2.0 1.8 1.6 6 1.4 VOUT (V) GROUND CURRENT (µA) 8 VIN = 2.8V VIN = 3.2V VIN = 3.4V VIN = 3.6V 4 2 1.2 1.0 0.8 0.6 50 100 150 200 250 300 350 400 450 500 LOAD (mA) 0.2 0 Figure 22. Ground Current vs. Load Current As shown in Figure 23, an increase in quiescent current can occur when VEN ≠ VIN. This is caused by the CMOS logic nature of the level shift circuitry as it translates an VEN signal ≥ 1.2 V to a logic high. This increase is a function of the VIN − VEN delta. 16 VIN = 1.2V VIN = 1.5V VIN = 1.8V VIN = 2.5V VIN = 3.6V 14 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VEN (V) 0.8 0.9 1.0 1.1 1.2 Figure 24. Typical EN Operation As shown in Figure 24, the EN pin has hysteresis built in. This prevents on/off oscillations that can occur due to noise on the EN pin as it passes through the threshold points. The EN pin active/inactive thresholds derive from the VIN voltage; therefore, these thresholds vary with the changing input voltage. Figure 25 shows the typical EN active/inactive thresholds when the input voltage varies from 1.2 V to 3.6 V. 10 1.15 6 4 2 0.65 EN INACTIVE 0.55 VIN (V) Figure 25. Typical EN Thresholds vs. Input Voltage (VIN) Rev. C | Page 10 of 12 3.60 08679-020 3.45 3.30 3.15 3.00 0.35 2.85 0.45 2.70 Figure 23. Typical Ground Current when VEN ≠ VIN 3.6 2.55 3.2 2.25 2.8 2.40 2.4 2.10 2.0 VEN (V) 1.95 1.6 1.80 1.2 0.75 1.65 0.8 EN ACTIVE 0.85 1.50 0.4 0.95 1.35 0 1.05 1.20 0 TYPICAL EN THRESHOLDS (V) 8 08679-018 IGND (µA) 0 08679-019 0 08679-017 0.4 0 Data Sheet ADP195 TIMING VEN Turn-on delay is defined as the delta between the time that VEN reaches >1.2 V until VOUT rises to ~10% of its final value. The ADP195 includes circuitry to have typical 5 μs turn-on delay at 3.6 V VIN to limit the VIN inrush current. As shown in Figure 26, the turn-on delay is dependent on the input voltage. 5.0 2 VEN VIN = 1.2V VIN = 1.8V VIN = 2.5V VIN = 3.6V 4.5 4.0 LOAD CURRENT 3 3.5 CH1 2V BW CH2 1V CH3 200mA Ω BW 2.5 2.0 A CH1 2.32V Figure 28. Typical Rise Time and Inrush Current, CLOAD = 1 μF, VIN = 1.8 V, Load = 200 mA 1.5 The turn-off time is defined as the delta between the time from 90% to 10% of VOUT reaching its final value. It is also dependent on the RC time constant. 1.0 0 5 10 15 20 25 30 35 40 TIME (µs) 08679-021 0.5 0 M4µs T 10% 08679-023 3.0 5.0 VEN VOUT AT 200mA VOUT AT 100mA 4.5 Figure 26. Typical Turn-On Delay Time with Varying Input Voltage 4.0 3.5 VOLTAGE (V) The rise time is defined as the delta between the time from 10% to 90% of VOUT reaching its final value. It is dependent on the RC time constant where C = load capacitance (CLOAD) and R = RDSON||RLOAD. Because RDSON is usually smaller than RLOAD, an adequate approximation for RC is RDSON × CLOAD. An input or load capacitor is not needed for the ADP195; however, capacitors can be used to suppress noise on the board. If significant load capacitance is connected, inrush current is a concern. 3.0 2.5 2.0 1.5 1.0 0.5 0 VEN 0 20 40 60 TIME (µs) VOUT 1 Figure 29. Typical Turn-Off Time 2 LOAD CURRENT CH1 2V BW CH2 1V CH3 200mA Ω BW BW M4µs T 10% A CH1 2.32V 08679-022 3 Figure 27. Typical Rise Time and Inrush Current, CLOAD = 1 μF, VIN = 1.8 V, No Load Rev. C | Page 11 of 12 80 100 08679-024 VOLTAGE (V) VOUT 1 ADP195 Data Sheet OUTLINE DIMENSIONS 0.640 0.595 0.550 0.370 0.355 0.340 0.990 0.950 0.910 SEATING PLANE 1 A 0.340 0.320 0.300 1.065 1.025 0.985 BALL A1 IDENTIFIER 2 B 0.50 REF BOTTOM VIEW 0.270 0.240 0.210 (BALL SIDE UP) 0.05 NOM COPLANARITY 110309-A TOP VIEW (BALL SIDE DOWN) Figure 30. 4-Ball Wafer Level Chip Scale Package [WLCSP] (CB-4-4) Dimensions shown in millimeters 1.70 1.60 1.50 2.00 BSC SQ 0.65 BSC 6 4 1.10 1.00 0.90 EXPOSED PAD 0.425 0.350 0.275 3 TOP VIEW 0.60 0.55 0.50 SEATING PLANE 0.05 MAX 0.02 NOM 0.35 0.30 0.25 1 BOTTOM VIEW PIN 1 INDICATOR (R 0.15) FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 0.20 REF 07-11-2011-B PIN 1 INDEX AREA 0.175 REF Figure 31. 6-Lead Lead Frame Chip Scale Package [LFCSP_UD] 2.00 x 2.00 mm Body, Ultra Thin, Dual Lead (CP-6-3) Dimensions shown in millimeters ORDERING GUIDE Model 1 ADP195ACBZ-R7 ADP195ACPZ-R7 ADP195-EVALZ ADP195-CP-EVALZ 1 Temperature Range −40°C to +85°C −40°C to +85°C Package Description 4-Ball Wafer Level Chip Scale Package [WLCSP] 6-Lead Lead Frame Chip Scale Package [LFCSP_UD] Evaluation Board Evaluation Board Z = RoHS Compliant Part. ©2010–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D08679-0-1/12(C) Rev. C | Page 12 of 12 Package Option CB-4-4 CP-6-3 Branding 5Y LJ6
ADP195ACPZ-R7 价格&库存

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ADP195ACPZ-R7
  •  国内价格
  • 1+7.08102
  • 10+6.06075
  • 30+5.42625
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  • 500+4.47704
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库存:7