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ADR292GT9

ADR292GT9

  • 厂商:

    AD(亚德诺)

  • 封装:

    TO226-3

  • 描述:

    IC VREF SERIES 0.15% TO92-3

  • 数据手册
  • 价格&库存
ADR292GT9 数据手册
a Low Noise Micropower Precision Voltage References ADR290/ADR291/ADR292 PIN CONFIGURATIONS 8-Lead Narrow Body SO (R Suffix) FEATURES Voltage Options 2.048 V, 2.500 V and 4.096 V 2.7 V to 15 V Supply Range Supply Current 12 mA max Initial Accuracy 62 mV max Temperature Coefficient 8 ppm/8C max Low-Noise 6 mV p-p (0.1 – 10 Hz) High Output Current 5 mA min Temperature Range 2408C to 11258C REF02/REF19x Pinout ADR29x 7 TOP VIEW (Not to Scale) 6 VOUT 3 GND 4 OBS 5 8-Lead TSSOP (RU Suffix) APPLICATIONS Portable Instrumentation Precision Reference for 3 V and 5 V Systems A/D and D/A Converter Reference Solar Powered Applications Loop-Current Powered Instruments GENERAL DESCRIPTION 8 1 VIN 2 OLE 8 1 VIN 2 ADR29x 7 TOP VIEW 3 (Not to Scale) 6 VOUT GND 4 5 TE 3-Pin TO-92 (T9 Suffix) The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET™ architecture offers significant performance improvements over traditional bandgap and Zenerbased references. Improvements include: one quarter the voltage noise output of bandgap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis and excellent long-term stability. PIN 1 VIN PIN 2 PIN 3 GND VOUT BOTTOM VIEW The ADR29x family are series voltage references providing stable and accurate output voltages from supplies as low as 2.7 V. Output voltage options are 2.048 V, 2.5 V and 4.096 V for the ADR290, ADR291 and ADR292 respectively. Quiescent current is only 12 µA, making these devices ideal for battery powered instrumentation. Three electrical grades are available offering initial output accuracies of ± 2 mV, ± 3 mV and ± 6 mV max for the ADR290 and ADR291 and ± 3 mV, ± 4 mV and ±6 mV max for the ADR292. Temperature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C and 25 ppm/°C max, respectively. Line regulation and load regulation are typically 30 ppm/V and 30 ppm/mA, maintaining the reference’s overall high performance. For a device with 5.0 V output, refer to the ADR293 data sheet. Part Number Nominal Output Voltage (V) ADR290 ADR291 ADR292 2.048 2.500 4.096 The ADR290, ADR291 and ADR292 references are specified over the extended industrial temperature range of –40°C to +125°C. Devices are available in the 8-lead SOIC, 8-lead TSSOP and the TO-92 package. XFET is a trademark of Analog Devices, Inc. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 World Wide Web Site: http://www.analog.com Fax: 617/326-8703 © Analog Devices, Inc., 1997 ADR290/ADR291/ADR292 ADR290–SPECIFICATIONS Electrical Specifications (V = 12.7 V, T = 1258C unless otherwise noted) A S Parameter Symbol Conditions Min Typ INITIAL ACCURACY “E” Grade “F” Grade “G” Grade VO IOUT = 0 mA 2.046 2.045 2.042 2.048 2.050 2.051 2.054 V V V LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 2.7 V to 15 V, IOUT = 0 mA 30 40 100 125 ppm/V ppm/V 100 125 ppm/mA ppm/mA OBS Max Units LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 30 40 LONG TERM STABILITY ∆VO 1000 hrs @ +25°C, VS = +15 V 0.2 ppm NOISE VOLTAGE eN 0.1 Hz to 10 Hz 6 µV p-p WIDEBAND NOISE DENSITY en at 1 kHz 420 nV/√Hz OLE Electrical Specifications (V = 12.7 V, T = 2258C ≤ T ≤ 1858C unless otherwise noted) S A A Parameter Symbol Conditions TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 2.7 V to 15 V, IOUT = 0 mA LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA TE Min Typ Max Units 3 6 10 8 15 25 ppm/°C ppm/°C ppm/°C 35 50 125 150 ppm/V ppm/V 20 30 125 150 ppm/mA ppm/mA Typ Max Units Electrical Specifications (V = 12.7 V, T = 2408C ≤ T ≤ 11258C unless otherwise noted) A S A Parameter Symbol Conditions Min TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA 3 5 10 10 20 30 ppm/°C ppm/°C ppm/°C LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 2.7 V to 15 V, IOUT = 0 mA 40 70 200 250 ppm/V ppm/V LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 20 30 200 300 ppm/mA ppm/mA SUPPLY CURRENT @ +25°C 8 12 12 15 µA µA THERMAL HYSTERESIS TO-92, SO-8, TSSOP-8 50 ppm NOTE Specifications subject to change without notice. –2– REV. 0 ADR291–SPECIFICATIONS ADR290/ADR291/ADR292 Electrical Specifications (V = 13.0 V, T = 1258C unless otherwise noted) A S Parameter Symbol Conditions Min Typ INITIAL ACCURACY “E” Grade “F” Grade “G” Grade VO IOUT = 0 mA 2.498 2.497 2.494 2.500 2.502 2.503 2.506 V V V LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 3.0 V to 15 V, IOUT = 0 mA 30 40 100 125 ppm/V ppm/V LOAD REGULATION “E/F“ Grades “G“ Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 30 40 100 125 ppm/mA ppm/mA LONG TERM STABILITY ∆VO 1000 hrs @ +25°C, VS = +15 V 0.2 ppm NOISE VOLTAGE eN 0.1 Hz to 10 Hz 8 µV p-p WIDEBAND NOISE DENSITY en at 1 kHz 480 nV/√Hz OBS OLE Max Units Electrical Specifications (V = 13.0 V, T = 2258C ≤ T ≤ 1858C unless otherwise noted) S A A Parameter Symbol Conditions TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 3.0 V to 15 V, IOUT = 0 mA LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA Min Typ Max Units TE 3 5 10 8 15 25 ppm/°C ppm/°C ppm/°C 35 50 125 150 ppm/V ppm/V 20 30 125 150 ppm/mA ppm/mA Typ Max Units Electrical Specifications (V = 13.0 V, T = 2408C ≤ T ≤ 11258C unless otherwise noted) A S A Parameter Symbol Conditions TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA 3 5 10 10 20 30 ppm/°C ppm/°C ppm/°C LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 3.0 V to 15 V, IOUT = 0 mA 40 70 200 250 ppm/V ppm/V LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 20 30 200 300 ppm/mA ppm/mA SUPPLY CURRENT @ +25°C 9 12 12 15 µA µA THERMAL HYSTERESIS TO-92, SO-8, TSSOP-8 50 NOTE Specifications subject to change without notice. REV. 0 –3– Min ppm ADR290/ADR291/ADR292 ADR292–SPECIFICATIONS Electrical Specifications (VS = 15 V, TA = 1258C unless otherwise noted) Parameter Symbol Conditions Min Typ INITIAL ACCURACY “E” Grade “F” Grade “G” Grade VO IOUT = 0 mA 4.093 4.092 4.090 4.096 4.099 4.100 4.102 V V V LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 4.5 V to 15 V, IOUT = 0 mA 30 40 100 125 ppm/V ppm/V 100 125 ppm/mA ppm/mA OBS Max Units LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 30 40 LONG TERM STABILITY ∆VO 1000 hrs @ +25°C, VS = +15 V 0.2 ppm NOISE VOLTAGE eN 0.1 Hz to 10 Hz µV p-p WIDEBAND NOISE DENSITY eN OLE 12 at 1 kHz 640 nV/√Hz Electrical Specifications (VS = 15 V, TA = 2258C ≤ TA ≤ 1858C unless otherwise noted) Parameter Symbol Conditions TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 4.5 V to 15 V, IOUT = 0 mA LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA Electrical Specifications TE Min Typ Max Units 3 5 10 8 15 25 ppm/°C ppm/°C ppm/°C 35 50 125 150 ppm/V ppm/V 20 30 125 150 ppm/mA ppm/mA Typ Max Units (VS = 15 V, TA = 2408C ≤ TA ≤ 11258C unless otherwise noted) Parameter Symbol Conditions Min TEMPERATURE COEFFICIENT “E” Grade “F” Grade “G” Grade TCVO/°C IOUT = 0 mA 3 5 10 10 20 30 ppm/°C ppm/°C ppm/°C LINE REGULATION “E/F” Grades “G” Grade ∆VO/∆VIN 4.5 V to 15 V, IOUT = 0 mA 40 70 200 250 ppm/V ppm/V LOAD REGULATION “E/F” Grades “G” Grade ∆VO/∆ILOAD VS = 5.0 V, 0 mA to 5 mA 20 30 200 300 ppm/mA ppm/mA SUPPLY CURRENT @ +25°C 10 12 15 18 µA µA THERMAL HYSTERESIS TO-92, SO-8, TSSOP-8 50 ppm NOTE Specifications subject to change without notice. –4– REV. 0 ADR290/ADR291/ADR292 WAFER TEST LIMITS (@ I LOAD = 0 mA, TA = 1258C unless otherwise noted) Parameter Symbol Conditions INITIAL ACCURACY ADR290 ADR291 ADR292 VO VO VO LINE REGULATION ∆VO/∆VIN LOAD REGULATION ∆VO/∆ILOAD SUPPLY CURRENT OBS Limits Units 2.042/2.054 2.494/2.506 4.090/4.102 V V V VO + 1 V < VIN < 15 V, IOUT = 0 mA 125 ppm/V 0 to 5 mA, VIN = VO + 1 V 125 ppm/mA ADR290, ADR291, no load ADR292, no load 12 15 µA µA NOTES Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. Specifications subject to change without notice. 1 OLE DICE CHARACTERISTICS Die Size 0.074 3 0.052 inch, 3848 sq. mils (1.88 3 1.32 mm, 2.48 sq. mm) Transistor Count: 52 4 TE 3 2 For additional DICE ordering information, refer to databook. REV. 0 –5– 1. V IN 2. GND 3. VOUT(FORCE) 4. VOUT(SENSE) ADR290/ADR291/ADR292 ABSOLUTE MAXIMUM RATINGS* *CAUTION Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite Storage Temperature Range T9, R, RU Package . . . . . . . . . . . . . . . . . 265°C to 1150°C Operating Temperature Range ADR290/ADR291/ADR292 . . . . . . . . . . . 240°C to 1125°C Junction Temperature Range T9, R, RU Package . . . . . . . . . . . . . . . . . 265°C to 1125°C Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 1300°C 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation at or above this specification is not implied. Exposure to the above maximum rating conditions for extended periods may affect device reliability. Package Type uJA1 uJC Units 8-Lead SOIC (R) 8-Lead TO-92 (T9) 3-Pin TSSOP (RU) 158 162 240 43 120 43 °C/W °C/W °C/W OBS 2. Remove power before inserting or removing units from their sockets. 3. Ratings apply to both DICE and packaged parts, unless otherwise noted NOTE 1 θJA is specified for worst case conditions, i.e. θJA is specified for device in socket for PDIP, and θJA is specified for a device soldered in circuit board for SOIC packages. Model OLE ORDERING GUIDE Temperature Range Package ADR290ER, ADR290FR, ADR290GR ADR290ER-REEL, ADR290FR-REEL, ADR290GR-REEL ADR290ER-REEL7, ADR290FR-REEL7, ADR290GR-REEL7 ADR290GT9 ADR290GT9-REEL ADR290GRU-REEL ADR290GRU-REEL7 ADR290GBC 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 125°C 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC 3-Pin TO-92 3-Pin TO-92 8-Lead TSSOP 8-Lead TSSOP DICE ADR291ER, ADR291FR, ADR291GR ADR291ER-REEL, ADR291FR-REEL, ADR291GR-REEL ADR291ER-REEL7, ADR291FR-REEL7, ADR291GR-REEL7 ADR291GT9 ADR291GT9-REEL ADR291GRU-REEL ADR291GRU-REEL7 ADR291GBC 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 125°C ADR292ER, ADR292FR, ADR292GR ADR292ER-REEL, ADR292FR-REEL, ADR292GR-REEL ADR292ER-REEL7, ADR292FR-REEL7, ADR292GR-REEL7 ADR292GT9 ADR292GT9-REEL ADR292GRU-REEL ADR292GRU-REEL7 ADR292GBC 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 240°C to 1125°C 125°C CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADR290/ADR291/ADR292 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –6– TE 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC 3-Pin TO-92 3-Pin TO-92 8-Lead TSSOP 8-Lead TSSOP DICE 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC 3-Pin TO-92 3-Pin TO-92 8-Lead TSSOP 8-Lead TSSOP DICE WARNING! ESD SENSITIVE DEVICE REV. 0 ADR290/ADR291/ADR292 2.054 14 VS = 5V 3 TYPICAL PARTS 12 QUIESCENT CURRENT – OUTPUT VOLTAGE – V A 2.052 2.050 2.048 2.046 2.044 2.042 –50 10 TA = +125 C 8 TA = +25 C TA = –40 C 6 4 2 OBS –25 0 25 50 75 100 0 125 0 2 4 TEMPERATURE – C Figure 1. ADR290 VOUT vs. Temperature VS = 5V 16 14 2.502 2.500 2.498 A 12 QUIESCENT CURRENT – OUTPUT VOLTAGE – V 14 3 TYPICAL PARTS 2.504 2.496 10 8 6 4 2 –25 12 Figure 4. ADR290 Quiescent Current vs. Input Voltage OLE 2.506 2.494 –50 6 8 10 INPUT VOLTAGE – V 0 25 50 75 100 0 125 0 2 4 TEMPERATURE – C Figure 2. ADR291 VOUT vs. Temperature TA = +125 C TE TA = +25 C TA = –40 C 6 8 10 INPUT VOLTAGE – V 12 14 16 Figure 5. ADR291 Quiescent Current vs. Input Voltage 4.102 16 VS = 5V 3 TYPICAL PARTS 14 QUIESCENT CURRENT – OUTPUT VOLTAGE – V A 4.100 4.098 4.096 4.094 12 TA = +125 C 10 TA = +25 C TA = –40 C 8 6 4 4.092 2 4.090 –50 –25 0 25 50 75 100 0 125 TEMPERATURE – C Figure 3. ADR292 VOUT vs. Temperature REV. 0 0 2 4 6 8 10 INPUT VOLTAGE – V 12 14 16 Figure 6. ADR292 Quiescent Current vs. Input Voltage –7– ADR290/ADR291/ADR292 0.7 14 VS = 5V 0.6 ADR291 SUPPLY CURRENT – A ADR292 DIFFERENTIAL VOLTAGE – V 12 10 8 ADR290 6 TA = –40 C 0.5 TA = +125 C 0.4 0.3 TA = +25 C 0.2 0.1 4 –50 OBS –25 0 25 50 75 100 0 125 0 0.5 1.0 1.5 TEMPERATURE – C Figure 7. ADR290/ADR291/ADR292 Supply Current vs. Temperature IOUT = 0mA 80 60 ADR292 40 ADR290 25 50 75 100 TA = +125 C 0.5 0.4 0.3 0.2 0.1 ADR291 0 Figure 8. ADR290/ADR291/ADR292 Line Regulation vs. Temperature TE TA = +25 C TA = –40 C 0 125 0 0.5 1.0 1.5 TEMPERATURE – C 2.0 2.5 3.0 3.5 LOAD CURRENT – mA 4.0 4.5 5.0 Figure 11. ADR291 Minimum Input-Output Voltage Differential vs. Load Current 0.7 100 ADR290: VS = 2.7V TO 7.0V ADR291: VS = 3.0V TO 7.0V ADR292: VS = 4.5V TO 9.0V IOUT = 0mA 0.6 80 DIFFERENTIAL VOLTAGE – V LINE REGULATION – ppm/V 5.0 0.6 20 –25 4.5 0.7 DIFFERENTIAL VOLTAGE – V LINE REGULATION – ppm/V ADR290: VS = 2.7V TO 15V ADR291: VS = 3.0V TO 15V ADR292: VS = 4.5V TO 15V 4.0 Figure 10. ADR290 Minimum Input-Output Voltage Differential vs. Load Current OLE 100 0 –50 2.0 2.5 3.0 3.5 LOAD CURRENT – mA 60 ADR290 ADR291 40 ADR292 20 TA = +125 C 0.5 TA = +25 C 0.4 0.3 0.2 TA = –40 C 0.1 0 –50 –25 0 25 50 75 100 0 125 0 TEMPERATURE – C Figure 9. ADR290/ADR291/ADR292 Line Regulation vs. Temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 LOAD CURRENT – mA 4.0 4.5 5.0 Figure 12. ADR292 Minimum Input-Output Voltage Differential vs. Load Current –8– REV. 0 ADR290/ADR291/ADR292 500 200 250 V 160 ∆ VOUT FROM NOMINAL – LINE REGULATION – ppm/mA VS = 5V 120 IOUT = 1mA 80 40 0 TA = +25 C –250 TA = +125 C –500 TA = –40 C –750 IOUT = 5mA 0 –50 OBS 0 –25 25 50 75 100 –1000 0.1 125 TEMPERATURE – C OLE 160 IOUT = 1mA 120 –250 V LOAD REGULATION – ppm/mA VS = 5V 0 ∆ VOUT FROM NOMINAL – 200 IOUT = 5mA 80 40 0 25 50 75 100 –750 –100 –1250 –1500 –2000 0.1 125 TEMPERATURE – C TE TA = –40 C TA = +125 C 1 SOURCING LOAD CURRENT – mA 10 Figure 17. ADR291 ∆VOUT from Nominal vs. Load Current Figure 14. ADR291 Load Regulation vs. Temperature 0 200 VS = 5V –500 V 160 ∆ VOUT FROM NOMINAL – LOAD REGULATION – ppm/mA TA = +25 C –500 –1750 –25 10 Figure 16. ADR290 ∆VOUT from Nominal vs. Load Current Figure 13. ADR290 Load Regulation vs. Temperature 0 –50 1 SOURCING LOAD CURRENT – mA 120 IOUT = 1mA IOUT = 5mA 80 –1000 –1500 TA = +25 C TA = –40 C TA = +125 C –2000 –2500 –3000 40 –3500 0 –50 –25 0 25 50 75 100 –4000 0.1 125 TEMPERATURE – C 10 Figure 18. ADR292 ∆VOUT from Nominal vs. Load Current Figure 15. ADR292 Load Regulation vs. Temperature REV. 0 1 SOURCING LOAD CURRENT – mA –9– ADR290/ADR291/ADR292 1000 50 ADR292 900 VS = 5V IL = 0 mA VIN = 15V TA = 25 C 40 OUTPUT IMPEDANCE – Ω VOLTAGE NOISE DENSITY – µV/√Hz 800 700 ADR291 600 500 400 300 ADR290 200 20 10 100 0 10 OBS 100 FREQUENCY – Hz 0 1000 Figure 19. Voltage Noise Density VS = 5V 100 80 60 40 0 10 1k 10k OLE 50 VS = 5V IL = 0 mA 40 30 20 10 20 0 10 100 FREQUENCY – Hz Figure 22. ADR290 Output Impedance vs. Frequency OUTPUT IMPEDANCE – Ω 120 RIPPLE REJECTION – dB 30 100 FREQUENCY – Hz 0 1000 Figure 20. ADR290/ADR291/ADR292 Ripple Rejection vs. Frequency 0 10 TE 100 FREQUENCY – Hz 1k 10k Figure 23. ADR291 Output Impedance vs. Frequency 50 VS = 5V IL = 0 mA 1s 40 OUTPUT IMPEDANCE – Ω 100 90 2µVP–P 10 30 20 10 0% TIME – sec 0 Figure 21. ADR290 0.1 Hz to 10 Hz Noise 0 10 100 FREQUENCY – Hz 1k 10k Figure 24. ADR292 Output Impedance vs. Frequency –10– REV. 0 ADR290/ADR291/ADR292 IL = 5mA 1ms 500µs IL = 5mA OFF ON 100 90 100 90 10 10 0% 0% 1V 1V OBS Figure 25. ADR291 Load Transient IL = 5mA CL = 1nF OFF 100 90 ON 10 Figure 28. ADR291 Turn-On Time OLE 1ms IL = 0mA 100 90 10 0% 0% 1V Figure 26. ADR291 Load Transient IL = 5mA CL = 100nF OFF TE 1V Figure 29. ADR291 Turn-Off Time 5ms 100 90 ON 10 0% 1V Figure 27. ADR291 Load Transient REV. 0 10ms –11– ADR290/ADR291/ADR292 THEORY OF OPERATION Device Power Dissipation Considerations The ADR29x series of references uses a new reference generation technique known as XFET™ (eXtra implanted junction FET). This technique yields a reference with low noise, low supply current and very low thermal hysteresis. The ADR29x family of references is guaranteed to deliver load currents to 5 mA with an input voltage that ranges from 2.7 V to 15 V (minimum supply voltage depends on output voltage option). When these devices are used in applications with large input voltages, care should be exercised to avoid exceeding the published specifications for maximum power dissipation or junction temperature that could result in premature device failure. The following formula should be used to calculate a device’s maximum junction temperature or dissipation: The core of the XFET™ reference consists of two junction fieldeffect transistors, one of which has an extra channel implant to raise its pinch-off voltage. By running the two JFETS at the same drain current, the difference in pinch-off voltage can be amplified and used to form a highly stable voltage reference. The intrinsic reference voltage is around 0.5 V with a negative temperature coefficient of about –120 ppm/K. This slope is essentially locked to the dielectric constant of silicon and can be closely compensated by adding a correction term generated in the same fashion as the proportional-to-temperature (PTAT) term used to compensate bandgap references. The big advantage over a bandgap reference is that the intrinsic temperature coefficient is some thirty times lower (therefore less correction is needed) and this results in much lower noise since most of the noise of a bandgap reference comes from the temperature compensation circuitry. PD = OBS Basic Voltage Reference Connections References, in general, require a bypass capacitor connected from the VOUT pin to the GND pin. The circuit in Figure 31 illustrates the basic configuration for the ADR29x family of references. Note that the decoupling capacitors are not required for circuit stability. OLE NC  R1 + R2 + R3  VOUT = ∆VP   + I PTAT R3 R1   )( ) I1 TE 8 NC 7 NC ADR29x The process used for the XFET reference also features vertical NPN and PNP transistors, the latter of which are used as output devices to provide a very low drop-out voltage. VIN 1 2 where ∆VP is the difference in pinch-off voltage between the two FETs, and IPTAT is the positive temperature coefficient correction current. The various versions of the ADR29x family are created by on-chip adjustment of R1 and R3 to achieve 2.048 V, 2.500 V or 4.096 V at the reference output. I1 θ JA In this equation, TJ and TA are the junction and ambient temperatures, respectively, PD is the device power dissipation, and θJA is the device package thermal resistance. The simplified schematic below shows the basic topology of the ADR29x series. The temperature correction term is provided by a current source with value designed to be proportional to absolute temperature. The general equation is: ( TJ − TA NC + 10µF 3 0.1µF 4 OUTPUT 6 5 NC 0.1µF Figure 31. Basic Voltage Reference Configuration Noise Performance The noise generated by the ADR29x family of references is typically less than 12 µV p-p over the 0.1 Hz to 10 Hz band. Figure 21 shows the 0.1 Hz to 10 Hz noise of the ADR290 which is only 6 µV p-p. The noise measurement is made with a bandpass filter made of a 2-pole high-pass filter with a corner frequency at 0.1 Hz and a 2-pole low-pass filter with a corner frequency at 10 Hz. Turn-On Time * VOUT ∆VP R1 IPTAT R2 Upon application of power (cold start), the time required for the output voltage to reach its final value within a specified error band is defined as the turn-on settling time. Two components normally associated with this are the time for the active circuits to settle, and the time for the thermal gradients on the chip to stabilize. Figure 28 shows the turn-on settling time for the ADR291. R3 *EXTRA CHANNEL IMPLANT VOUT 5 R11 R2 1R3 R1 GND 3 ∆VP1 I PTAT 3R3 Figure 30. ADR290/ADR291/ADR292 Simplified Schematic APPLICATIONS SECTION A Negative Precision Reference without Precision Resistors In many current-output CMOS DAC applications, where the output signal voltage must be of the same polarity as the reference voltage, it is often required to reconfigure a current-switching DAC into a voltage-switching DAC through the use of a 1.25 V reference, an op amp and a pair of resistors. Using a current-switching DAC directly requires the need for an additional operational amplifier at the output to reinvert the signal. A negative voltage reference is then desirable from the point that –12– REV. 0 ADR290/ADR291/ADR292 an additional operational amplifier is not required for either reinversion (current-switching mode) or amplification (voltageswitching mode) of the DAC output voltage. In general, any positive voltage reference can be converted into a negative voltage reference through the use of an operational amplifier and a pair of matched resistors in an inverting configuration. The disadvantage to that approach is that the largest single source of error in the circuit is the relative matching of the resistors used. The circuit illustrated in Figure 32 avoids the need for tightly matched resistors with the use of an active integrator circuit. In this circuit, the output of the voltage reference provides the input drive for the integrator. The integrator, to maintain circuit equilibrium adjusts its output to establish the proper relationship between the reference’s VOUT and GND. Thus, any negative output voltage desired can be chosen by simply substituting for the appropriate reference IC. One caveat with this approach should be mentioned: although rail-to-rail output amplifiers work best in the application, these operational amplifiers require a finite amount (mV) of headroom when required to provide any load current. The choice for the circuit’s negative supply should take this issue into account. OBS VIN 2 ADR29x 1kΩ VOUT +5V 2 ADR29x 6 VOUT R1 GND 100kΩ 1µF 1µF 4 ISY ADJUST P1 IOUT 6 RSET RL Figure 33. A Precision Current Source High Voltage Floating Current Source OLE The circuit of Figure 34 can be used to generate a floating current source with minimal self heating. This particular configuration can operate on high supply voltages determined by the breakdown voltage of the N-channel JFET. 100Ω GND 4 1µF 6 VIN A1 VIN –VREF TE +VS E231 SILICONIX –5V ADR290 2N3904 A1 = 1/2 OP291, 1/2 OP295 OP90 Figure 32. A Negative Precision Voltage Reference Uses No Precision Resistors GND 2.10k A Precision Current Source Many times in low power applications, the need arises for a precision current source that can operate on low supply voltages. As shown in Figure 33, any one of the devices in the ADR29x family of references can be configured as a precision current source. The circuit configuration illustrated is a floating current source with a grounded load. The reference’s output voltage is bootstrapped across RSET, which sets the output current into the load. With this configuration, circuit precision is maintained for load currents in the range from the reference’s supply current, typically 12 µA to approximately 5 mA. REV. 0 –VS Figure 34. High Voltage Floating Current Source Kelvin Connections In many portable instrumentation applications, where PC board cost and area go hand-in-hand, circuit interconnects are very often of dimensionally minimum width. These narrow lines can cause large voltage drops if the voltage reference is required to provide load currents to various functions. In fact, a circuit’s interconnects can exhibit a typical line resistance of 0.45 mW/square (1 oz. Cu, for example). Force and sense connections also referred to as Kelvin connections, offer a convenient method of eliminating the effects of voltage drops in circuit wires. Load currents flowing through wiring resistance produce an error (VERROR = R 3 IL ) at the load. However, the Kelvin connection of Figure 35, overcomes the problem by including the wiring resistance within the forcing loop of the op amp. Since the op amp senses the load voltage, op amp loop control forces the output to compensate for the wiring error and to produce the correct voltage at the load. –13– ADR290/ADR291/ADR292 Voltage Regulator For Portable Equipment VIN RLW The ADR29x family of references is ideal for providing a stable, low cost and low power reference voltage in portable equipment power supplies. Figure 37 shows how the ADR290/ADR291/ ADR292 can be used in a voltage regulator that not only has low output noise (as compared to switch mode design) and low power, but also a very fast recovery after current surges. Some precautions should be taken in the selection of the output capacitors. Too high an ESR (Effective Series Resistance) could endanger the stability of the circuit. A solid tantalum capacitor, 16 V or higher, and an aluminum electrolytic capacitor, 10 V or higher, are recommended for C1 and C2, respectively. Also, the path from the ground side of C1 and C2 to the ground side of R1 should be kept as short as possible. +VOUT SENSE 2 VIN RLW ADR29x A1 6 VOUT GND +VOUT FORCE RL 1µF 100kΩ 4 A1 = 1/2 OP295 Figure 35. Advantage of Kelvin Connection OBS Low Power, Low Voltage Reference For Data Converters The ADR29x family has a number of features that makes it ideally suited for use with A/D and D/A converters. The low supply voltage required makes it possible to use the ADR29x with today’s converters that run on 3 V supplies without having to add a higher supply voltage for the reference. The low quiescent current (12 µA max) and low noise, tight temperature coefficient, combined with the high accuracy of the ADR29x makes it ideal for low power applications such as hand-held, battery operated equipment. CHARGER INPUT 0.1µF R3 510kΩ 2 VIN OLE V OUT 6 6V LEAD-ACID BATTERY + 2 7 3 4 ADR29x TEMP 3 GND 4 OP-20 +5V, 100mA TE R2 R1 402kΩ 402kΩ 1% 1% One such ADC for which the ADR291 is well suited is the AD7701. Figure 36 shows the ADR291 used as the reference for this converter. The AD7701 is a 16-bit A/D converter with on-chip digital filtering intended for the measurement of wide dynamic range, low frequency signals such as those representing chemical, physical or biological processes. It contains a charge balancing (sigma-delta) ADC, calibration microcontroller with on-chip static RAM, a clock oscillator and a serial communications port. IRF9530 6 C1 68µF TANT + + C2 1000µF ELECT Figure 37. Voltage Regulator for Portable Equipment This entire circuit runs on ± 5 V supplies. The power dissipation of the AD7701 is typically 25 mW and, when combined with the power dissipation of the ADR291 (60 µW), the entire circuit still consumes about 25 mW. +5V ANALOG SUPPLY 0.1µF 10µF AVDD V IN VOUT 0.1µF DV DD VREF ADR291 AD7701 BP/UP DRDY DATA READY CS SCLK READ (TRANSMIT) SDATA SERIAL CLOCK SERIAL DATA CAL CALIBRATE ANALOG INPUT AIN ANALOG GROUND AGND CLKIN CLKOUT 0.1µF 0.1µF SC1 SC2 DGND AVSS –5V ANALOG SUPPLY 0.1µF MODE GND RANGE SELECT SLEEP 0.1µF DVSS 10µF Figure 36. Low Power, Low Voltage Supply Reference for the AD7701 –14– REV. 0 ADR290/ADR291/ADR292 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead Narrow Body SO (R Suffix) 0.1968 (5.00) 0.1890 (4.80) 0.2440 (6.20) 0.2284 (5.80) OBS 8 5 1 4 0.1574 (4.00) 0.1497 (3.80) 0.102 (2.59) 0.094 (2.39) PIN 1 0.0196 (0.50) x 45° 0.0099 (0.25) 0.0098 (0.25) 0.0040 (0.10) 8° 0° 0.0500 0.0192 (0.49) SEATING (1.27) 0.0138 (0.35) 0.0098 (0.25) PLANE BSC 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) OLE 8-Lead TSSOP (RU Suffix) 0.122 (3.10) 0.114 (2.90) 8 TE 0.256 (6.50) 0.246 (6.25) 0.177 (4.50) 0.169 (4.30) 5 1 4 PIN 1 0.0256 (0.65) BSC 0.006 (0.15) 0.002 (0.05) 0.0433 (1.10) MAX SEATING PLANE 0.0118 (0.30) 0.0075 (0.19) 0.0079 (0.20) 0.0035 (0.090) 8° 0° 0.028 (0.70) 0.020 (0.50) 3-Pin TO-92 (T9 Suffix) 0.205 (5.20) 0.175 (4.96) 0.135 (3.43) MIN 0.210 (5.33) 0.170 (4.38) 0.050 (1.27) MAX SEATING PLANE 0.019 (0.482) 0.016 (0.407) SQUARE 0.500 (12.70) MIN 0.055 (1.39) 0.045 (1.15) 0.105 (2.66) 0.095 (2.42) 0.105 (2.66) 0.080 (2.42) 0.105 (2.66) 0.080 (2.42) 1 2 3 BOTTOM VIEW REV. 0 –15– 0.165 (4.19) 0.125 (3.94) PRINTED IN U.S.A. OBS OLE TE –16– C3151–12–7/97
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