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ADR430ARMZ

ADR430ARMZ

  • 厂商:

    AD(亚德诺)

  • 封装:

    MSOP-8_3X3MM

  • 描述:

    IC VREF SERIES 0.15% 8MSOP

  • 详情介绍
  • 数据手册
  • 价格&库存
ADR430ARMZ 数据手册
FEATURES PIN CONFIGURATIONS ADR430/ADR431 ADR433/ADR434 ADR435 DNC 1 8 DNC VIN 2 7 COMP TOP VIEW (Not to Scale) NIC 3 GND 4 6 VOUT 5 TRIM NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. 04500-001 Low noise (0.1 Hz to 10.0 Hz): 3.5 µV p-p at 2.500 V output No external capacitor required Low temperature coefficient A grade: 10 ppm/°C maximum B grade: 3 ppm/°C maximum Load regulation: 15 ppm/mA Line regulation: 20 ppm/V Wide operating range ADR430: 4.1 V to 18 V ADR431: 4.5 V to 18 V ADR433: 5.0 V to 18 V ADR434: 6.1 V to 18 V ADR435: 7.0 V to 18 V High output source and sink current: 30 mA and −20 mA Wide temperature range: −40°C to +125°C Figure 1. 8-Lead MSOP (RM-8) ADR430/ADR431 ADR433/ADR434 ADR435 DNC 1 8 DNC COMP TOP VIEW 6 VOUT (Not to Scale) 5 TRIM GND 4 VIN 2 APPLICATIONS 7 NIC 3 Precision data acquisition systems High resolution data converters Medical instruments Industrial process control systems Optical control circuits Precision instruments NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. 04500-041 Data Sheet Ultralow Noise XFET Voltage References with Current Sink and Source Capability ADR430/ADR431/ADR433/ADR434/ADR435 Figure 2. 8-Lead SOIC_N (R-8) GENERAL DESCRIPTION The ADR430/ADR431/ADR433/ADR434/ADR4351 series is a family of XFET® voltage references featuring low noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., temperature drift curvature correction and extra implanted junction FET (XFET) technology, voltage change vs. temperature nonlinearity in the ADR430/ADR431/ADR433/ ADR434/ADR435 is minimized. The XFET references operate at lower current (800 µA) and lower supply voltage headroom (2 V) than buried Zener references. Buried Zener references require more than 5 V of headroom for operation. The ADR430/ADR431/ADR433/ ADR434/ADR435 XFET references are low noise solutions for 5 V systems. The ADR430/ADR431/ADR433/ADR434/ADR435 family has the capability to source up to 30 mA of output current and sink up to −20 mA. It also comes with a trim terminal to adjust the output voltage over a ±0.5% range without compromising performance. 1 The ADR430/ADR431/ADR433/ADR434/ADR435 are available in 8-lead MSOP and 8-lead narrow SOIC packages. All versions are specified over the extended industrial temperature range of −40°C to +125°C. Table 1. Selection Guide Model ADR430A ADR430B ADR431A ADR431B ADR433A ADR433B ADR434A ADR434B ADR435A ADR435B Output Voltage (V) 2.048 2.048 2.500 2.500 3.000 3.000 4.096 4.096 5.000 5.000 Initial Accuracy (mV) ±3 ±1 ±3 ±1 ±4 ±1.5 ±5 ±1.5 ±6 ±2 Temperature Coefficient (ppm/°C) 10 3 10 3 10 3 10 3 10 3 Protected by U.S. Patent Number 5,838,192. Rev. N Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2003–2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Noise Performance ..................................................................... 16 Applications ....................................................................................... 1 High Frequency Noise ............................................................... 16 Pin Configurations ........................................................................... 1 Turn-On Settling Time .............................................................. 17 General Description ......................................................................... 1 Applications Information .............................................................. 18 Revision History ............................................................................... 2 Output Adjustment .................................................................... 18 Specifications..................................................................................... 4 ADR430 Electrical Characteristics............................................. 4 Reference for Converters in Optical Network Control Circuits......................................................................................... 18 ADR431 Electrical Characteristics............................................. 5 High Voltage Floating Current Source .................................... 18 ADR433 Electrical Characteristics............................................. 6 Kelvin Connection ..................................................................... 18 ADR434 Electrical Characteristics............................................. 7 Dual Polarity References ........................................................... 19 ADR435 Electrical Characteristics............................................. 8 Programmable Current Source ................................................ 19 Absolute Maximum Ratings............................................................ 9 Programmable DAC Reference Voltage .................................. 20 Thermal Resistance ...................................................................... 9 Precision Voltage Reference for Data Converters .................. 20 ESD Caution .................................................................................. 9 Precision Boosted Output Regulator ....................................... 21 Pin Configurations and Function Descriptions ......................... 10 Outline Dimensions ....................................................................... 22 Typical Performance Characteristics ........................................... 11 Ordering Guide .......................................................................... 23 Theory of Operation ...................................................................... 16 Basic Voltage Reference Connections ...................................... 16 REVISION HISTORY 2/2018—Rev. M to Rev. N Changed VO to VOUT and ADR43x to ADR430/ADR431/ ADR433/ADR434/ADR435 ......................................... Throughout Changes to Figure 1, Figure 2, and General Description Section ................................................................................................ 1 Changes to Output Current Capacity Parameter and Trim Range Parameter, Table 2................................................................. 4 Changes to Output Current Capacity Parameter and Trim Range Parameter, Table 3................................................................. 5 Changes to Output Current Capacity Parameter and Trim Range Parameter, Table 4................................................................. 6 Changes to Output Current Capacity Parameter and Trim Range Parameter, Table 5................................................................. 7 Changes to Output Current Capacity Parameter and Trim Range Parameter, Table 6................................................................. 8 Added Pin Configuration and Function Descriptions Section, Figure 3, Figure 4, and Table 9; Renumbered Sequentially ....... 10 Changes to Figure 14 and Figure 16 ............................................. 12 Changes to Figure 19 Caption and Figure 21 Caption .............. 13 Changes to Theory of Operation Section, Figure 32, Noise Performance Section, and High Frequency Noise Section ....... 16 Changes to Figure 33 Caption, Figure 34, and Turn-On Settling Time Section.................................................................................... 17 Changes to Reference for Converters in Optical Network Control Circuits Section and Programmable Current Source Section .............................................................................................. 19 Changes to Table 10 and Precision Boosted Output Regulator Section.............................................................................................. 20 Changes to Precision Boosted Output Regulator Section......... 21 6/2015—Rev. L to Rev. M Changes to Ordering Guide .......................................................... 22 7/2014—Rev. K to Rev. L Changes to Default Conditions, Typical Performance Characteristics Section .................................................................. 10 Changes to Ordering Guide .......................................................... 22 5/2014—Rev. J to Rev. K Deleted ADR439 (Throughout) ......................................................1 Changes to Features Section and Table 1 .......................................1 Deleted Table 7; Renumbered Sequentially ...................................9 Changes to Ordering Guide .......................................................... 22 7/2011—Rev. I to Rev. J Changes to Figure 1 and Figure 2 ....................................................1 Changes to Ordering Guide .......................................................... 23 5/2011—Rev. H to Rev. I Added Endnote 1 in Table 2 .............................................................4 Added Endnote 1 in Table 3 .............................................................5 Added Endnote 1 in Table 4 .............................................................6 Rev. N | Page 2 of 23 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 Added Endnote 1 in Table 5............................................................. 7 Added Endnote 1 in Table 6............................................................. 8 Added Endnote 1 in Table 7............................................................. 9 Deleted Negative Precision Reference Without Precision Resistors Section ..............................................................................17 Deleted Figure 36; Renumbered Sequentially .............................18 2/2011—Rev. G to Rev. H Updated Outline Dimensions ........................................................21 Changes to Ordering Guide ...........................................................22 7/2010—Rev. F to Rev. G Changes to Storage Temperature Range in Table 9....................... 9 6/2010—Rev. E to Rev. F Updated Pin Name NC to COMP Throughout ............................ 1 Changes to Figure 1 and Figure 2.................................................... 1 Changes to Figure 30 and High Frequency Noise Section ........15 Updated Outline Dimensions ........................................................21 Changes to Ordering Guide ...........................................................22 1/2009—Rev. D to Rev. E Added High Frequency Noise Section and Equation 3; Renumbered Sequentially ..............................................................15 Inserted Figure 31, Figure 32, and Figure 33; Renumbered Sequentially ......................................................................................16 Changes to the Ordering Guide ....................................................22 12/2007—Rev. C to Rev. D Changes to Initial Accuracy and Ripple Rejection Ratio Parameters in Table 2 through Table 7 ........................................... 3 Changes to Table 9 ............................................................................ 9 Changes to Theory of Operation Section .................................... 15 Updated Outline Dimensions........................................................ 20 8/2006—Rev. B to Rev. C Updated Format ................................................................. Universal Changes to Table 1 ............................................................................ 1 Changes to Table 3 ............................................................................ 4 Changes to Table 4 ............................................................................ 5 Changes to Table 7 ............................................................................ 8 Changes to Figure 26 ...................................................................... 14 Changes to Figure 31 ...................................................................... 16 Updated Outline Dimensions........................................................ 20 Changes to Ordering Guide ........................................................... 21 9/2004—Rev. A to Rev. B Added New Grade .............................................................. Universal Changes to Specifications ................................................................ 3 Replaced Figure 3, Figure 4, Figure 5 ........................................... 10 Updated Ordering Guide ............................................................... 21 6/2004—Rev. 0 to Rev. A Changes to Format ............................................................. Universal Changes to the Ordering Guide .................................................... 20 12/2003—Revision 0: Initial Version Rev. N | Page 3 of 23 ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet SPECIFICATIONS ADR430 ELECTRICAL CHARACTERISTICS VIN = 4.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted. Table 2. Parameter OUTPUT VOLTAGE A Grade B Grade INITIAL ACCURACY1 A Grade Symbol VOUT Test Conditions/Comments Min Typ Max Unit 2.045 2.047 2.048 2.048 2.051 2.049 V V ±3 ±0.15 ±1 ±0.05 mV % mV % 10 3 20 15 15 ppm/°C ppm/°C ppm/V ppm/mA ppm/mA VOERR B Grade TEMPERATURE COEFFICIENT A Grade B Grade LINE REGULATION LOAD REGULATION TCVOUT OUTPUT CURRENT CAPACITY Sourcing Sinking QUIESCENT CURRENT VOLTAGE NOISE VOLTAGE NOISE DENSITY TURN-ON SETTLING TIME LONG-TERM STABILITY2 OUTPUT VOLTAGE HYSTERESIS RIPPLE REJECTION RATIO SHORT CIRCUIT TO GND SUPPLY VOLTAGE OPERATING RANGE SUPPLY VOLTAGE HEADROOM TRIM RANGE IL 1 2 ∆VOUT/∆VIN ∆VOUT/∆IL IIN eN p-p eN tR ∆VOUT VOUT_HYS RRR ISC VIN −40°C < TA < +125°C −40°C < TA < +125°C VIN = 4.1 V to 18 V, −40°C < TA < +125°C IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 2 1 5 30 −20 560 3.5 60 10 40 20 –70 40 No load, −40°C < TA < +125°C 0.1 Hz to 10.0 Hz 1 kHz CL = 0 µF 1000 hours fIN = 1 kHz 4.1 VIN − VOUT 2 −5 18 mA mA µA µV p-p nV/√Hz µs ppm ppm dB mA V +5 V % 800 Initial accuracy does not include shift due to solder heat effect. The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period. Rev. N | Page 4 of 23 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 ADR431 ELECTRICAL CHARACTERISTICS VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted. Table 3. Parameter OUTPUT VOLTAGE A Grade B Grade INITIAL ACCURACY1 A Grade Symbol VOUT Test Conditions/Comments Min Typ Max Unit 2.497 2.499 2.500 2.500 2.503 2.501 V V ±3 ±0.12 ±1 ±0.04 mV % mV % 10 3 20 15 15 ppm/°C ppm/°C ppm/V ppm/mA ppm/mA VOERR B Grade TEMPERATURE COEFFICIENT A Grade B Grade LINE REGULATION LOAD REGULATION OUTPUT CURRENT CAPACITY Sourcing Sinking QUIESCENT CURRENT VOLTAGE NOISE VOLTAGE NOISE DENSITY TURN-ON SETTLING TIME LONG-TERM STABILITY2 OUTPUT VOLTAGE HYSTERESIS RIPPLE REJECTION RATIO SHORT CIRCUIT TO GND SUPPLY VOLTAGE OPERATING RANGE SUPPLY VOLTAGE HEADROOM TRIM RANGE 1 2 TCVOUT ∆VOUT/∆VIN ∆VOUT/∆IL −40°C < TA < +125°C −40°C < TA < +125°C VIN = 4.5 V to 18 V, −40°C < TA < +125°C IL = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C IL = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 2 1 5 IL IIN eN p-p eN tR ∆VOUT VOUT_HYS RRR ISC VIN 30 −20 580 3.5 80 10 40 20 −70 40 4.5 18 mA mA µA µV p-p nV/√Hz µs ppm ppm dB mA V 2 −5 +5 V % No load, −40°C < TA < +125°C 0.1 Hz to 10.0 Hz 1 kHz CL = 0 µF 1000 hours fIN = 1 kHz VIN − VOUT 800 Initial accuracy does not include shift due to solder heat effect. The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period. Rev. N | Page 5 of 23 ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet ADR433 ELECTRICAL CHARACTERISTICS VIN = 5.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted. Table 4. Parameter OUTPUT VOLTAGE A Grade B Grade INITIAL ACCURACY1 A Grade Symbol VOUT Test Conditions/Comments Min Typ Max Unit 2.996 2.9985 3.000 3.000 3.004 3.0015 V V ±4 ±0.13 ±1.5 ±0.05 mV % mV % 10 3 20 15 15 ppm/°C ppm/°C ppm/V ppm/mA ppm/mA VOERR B Grade TEMPERATURE COEFFICIENT A Grade B Grade LINE REGULATION LOAD REGULATION TCVOUT OUTPUT CURRENT CAPACITY Sourcing Sinking QUIESCENT CURRENT VOLTAGE NOISE VOLTAGE NOISE DENSITY TURN-ON SETTLING TIME LONG-TERM STABILITY2 OUTPUT VOLTAGE HYSTERESIS RIPPLE REJECTION RATIO SHORT CIRCUIT TO GND SUPPLY VOLTAGE OPERATING RANGE SUPPLY VOLTAGE HEADROOM TRIM RANGE IL 1 2 ∆VOUT/∆VIN ∆VOUT/∆IL IIN eN p-p eN tR ∆VOUT VOUT_HYS RRR ISC VIN −40°C < TA < +125°C −40°C < TA < +125°C VIN = 5 V to 18 V, −40°C < TA < +125°C IL = 0 mA to 10 mA, VIN = 6 V, −40°C < TA < +125°C IL = −10 mA to 0 mA, VIN = 6 V, −40°C < TA < +125°C 2 1 5 30 −20 590 3.75 90 10 40 20 −70 40 5.0 18 mA mA µA µV p-p nV/√Hz µs ppm ppm dB mA V 2 −5 +5 V % No load, −40°C < TA < +125°C 0.1 Hz to 10.0 Hz 1 kHz CL = 0 µF 1000 hours fIN = 1 kHz VIN − VOUT 800 Initial accuracy does not include shift due to solder heat effect. The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period. Rev. N | Page 6 of 23 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 ADR434 ELECTRICAL CHARACTERISTICS VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted. Table 5. Parameter OUTPUT VOLTAGE A Grade B Grade INITIAL ACCURACY1 A Grade Symbol VOUT Test Conditions/Comments Min Typ Max Unit 4.091 4.0945 4.096 4.096 4.101 4.0975 V V ±5 ±0.12 ±1.5 ±0.04 mV % mV % 10 3 20 15 15 ppm/°C ppm/°C ppm/V ppm/mA ppm/mA VOERR B Grade TEMPERATURE COEFFICIENT A Grade B Grade LINE REGULATION LOAD REGULATION OUTPUT CURRENT CAPACITY Sourcing Sinking QUIESCENT CURRENT VOLTAGE NOISE VOLTAGE NOISE DENSITY TURN-ON SETTLING TIME LONG-TERM STABILITY2 OUTPUT VOLTAGE HYSTERESIS RIPPLE REJECTION RATIO SHORT CIRCUIT TO GND SUPPLY VOLTAGE OPERATING RANGE SUPPLY VOLTAGE HEADROOM TRIM RANGE 1 2 TCVOUT ∆VOUT/∆VIN ∆VOUT/∆IL −40°C < TA < +125°C −40°C < TA < +125°C VIN = 6.1 V to 18 V, −40°C < TA < +125°C IL = 0 mA to 10 mA, VIN = 7 V, −40°C < TA < +125°C IL = −10 mA to 0 mA, VIN = 7 V, −40°C < TA < +125°C 2 1 5 IL IIN eN p-p eN tR ∆VOUT VOUT_HYS RRR ISC VIN 30 −20 595 6.25 100 10 40 20 −70 40 6.1 18 mA mA µA µV p-p nV/√Hz µs ppm ppm dB mA V 2 −5 +5 V % No load, −40°C < TA < +125°C 0.1 Hz to 10.0 Hz 1 kHz CL = 0 µF 1000 hours fIN = 1 kHz VIN − VOUT 800 Initial accuracy does not include shift due to solder heat effect. The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period. Rev. N | Page 7 of 23 ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet ADR435 ELECTRICAL CHARACTERISTICS VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted. Table 6. Parameter OUTPUT VOLTAGE A Grade B Grade INITIAL ACCURACY1 A Grade Symbol VOUT Test Conditions/Comments Min Typ Max Unit 4.994 4.998 5.000 5.000 5.006 5.002 V V ±6 ±0.12 ±2 ±0.04 mV % mV % 10 3 20 15 15 ppm/°C ppm/°C ppm/V ppm/mA ppm/mA VOERR B Grade TEMPERATURE COEFFICIENT A Grade B Grade LINE REGULATION LOAD REGULATION TCVOUT OUTPUT CURRENT CAPACITY Sourcing Sinking QUIESCENT CURRENT VOLTAGE NOISE VOLTAGE NOISE DENSITY TURN-ON SETTLING TIME LONG-TERM STABILITY2 OUTPUT VOLTAGE HYSTERESIS RIPPLE REJECTION RATIO SHORT CIRCUIT TO GND SUPPLY VOLTAGE OPERATING RANGE SUPPLY VOLTAGE HEADROOM TRIM RANGE IL 1 2 ∆VOUT/∆VIN ∆VOUT/∆IL IIN eN p-p eN tR ∆VOUT VOUT_HYS RRR ISC VIN VIN − VOUT −40°C < TA < +125°C −40°C < TA < +125°C VIN = 7 V to 18 V, −40°C < TA < +125°C IL = 0 mA to 10 mA, VIN = 8 V, −40°C < TA < +125°C IL = −10 mA to 0 mA, VIN = 8 V, −40°C < TA < +125°C 2 1 5 30 −20 620 8 115 10 40 20 −70 40 No load, −40°C < TA < +125°C 0.1 Hz to 10 Hz 1 kHz CL = 0 µF 1000 hours fIN = 1 kHz 7.0 2 −5 800 18 +5 Initial accuracy does not include shift due to solder heat effect. The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period. Rev. N | Page 8 of 23 mA mA µA µV p-p nV/√Hz µs ppm ppm dB mA V V % Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. THERMAL RESISTANCE Table 7. θJA is specified for the worst case conditions, that is, a device soldered in a circuit board for surface-mount packages. Parameter Supply Voltage Output Short-Circuit Duration to GND Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature, Soldering (60 sec) Rating 20 V Indefinite −65°C to +150°C −40°C to +125°C −65°C to +150°C 300°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Table 8. Thermal Resistance Package Type 8-Lead SOIC_N (R) 8-Lead MSOP (RM) ESD CAUTION Rev. N | Page 9 of 23 θJA 130 142 θJC 43 44 Unit °C/W °C/W ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS ADR430/ADR431 ADR433/ADR434 ADR435 ADR430/ADR431 ADR433/ADR434 ADR435 DNC 7 COMP NIC 3 TOP VIEW (Not to Scale) GND 4 6 VOUT 5 TRIM NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. DNC 1 8 DNC COMP TOP VIEW 6 VOUT (Not to Scale) 5 TRIM GND 4 VIN 2 7 NIC 3 NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. Figure 3. 8-Lead MSOP Pin Configuration 04500-141 8 VIN 2 04500-101 DNC 1 Figure 4. 8-Lead SOIC Pin Configuration Table 9. Pin Function Descriptions Pin No. 1 2 3 4 5 6 7 8 Mnemonic DNC VIN NIC GND TRIM VOUT COMP DNC Description Do Not Connect. Do not connect to this pin. Input Voltage Connection. Not Internally Connected. This pin is not connected internally. Ground. Output Voltage Trim. Output Voltage. Compensation Input. Connect a series resistor and capacitor network from COMP to VOUT to reduce overall noise. Do Not Connect. Do not connect to this pin. Rev. N | Page 10 of 23 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 TYPICAL PERFORMANCE CHARACTERISTICS Default conditions: VIN = 7 V, TA = 25°C, CIN = COUT = 0.1 μF, unless otherwise noted. 0.8 2.5009 SUPPLY CURRENT (mA) OUTPUT VOLTAGE (V) 2.5007 2.5005 2.5003 2.5001 2.4999 0.7 +125°C 0.6 +25°C –40°C 0.5 0.4 2.4997 20 35 50 65 80 95 110 125 TEMPERATURE (°C) 4 8 10 12 14 16 125 18 INPUT VOLTAGE (V) Figure 5. ADR431 Output Voltage vs. Temperature Figure 8. ADR435 Supply Current vs. Input Voltage 4.0980 700 4.0975 650 SUPPLY CURRENT (µA) OUTPUT VOLTAGE (V) 6 04500-018 5 04500-019 –10 04500-020 0.3 –25 04500-015 2.4995 –40 4.0970 4.0965 4.0960 4.0955 600 550 500 450 –25 –10 5 20 35 50 65 80 95 110 TEMPERATURE (°C) 125 400 –40 04500-016 4.0950 –40 –25 –10 5 20 35 50 65 80 95 110 TEMPERATURE (°C) Figure 6. ADR434 Output Voltage vs. Temperature Figure 9. ADR435 Supply Current vs. Temperature 0.60 5.0025 +125°C 0.58 5.0020 SUPPLY CURRENT (mA) 5.0010 5.0005 5.0000 0.54 0.52 +25°C 0.50 0.48 0.46 –40°C 0.44 4.9995 0.42 4.9990 –40 0.40 –25 –10 5 20 35 50 65 80 95 110 TEMPERATURE (°C) 125 04500-017 OUTPUT VOLTAGE (V) 0.56 5.0015 Figure 7. ADR435 Output Voltage vs. Temperature 6 8 10 12 14 16 INPUT VOLTAGE (V) Figure 10. ADR431 Supply Current vs. Input Voltage Rev. N | Page 11 of 23 ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet 2.5 SUPPLY VOLTAGE HEADROOM (V) SUPPLY CURRENT (µA) 580 550 520 490 460 400 –40 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) –40°C 1.5 +25°C 1.0 +125°C 0.5 0 –10 04500-021 430 2.0 –5 0 5 10 LOAD CURRENT (mA) Figure 11. ADR431 Supply Current vs. Temperature 04500-024 610 Figure 14. ADR431 Supply Voltage Headroom vs. Load Current over Temperature 15 1.9 IL = 0mA to 10mA NO LOAD 12 MINIMUM HEADROOM (V) LOAD REGULATION (ppm/mA) 1.8 9 6 1.7 1.6 1.5 1.4 1.3 1.2 3 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) 1.0 –40 04500-022 0 –40 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) Figure 12. ADR431 Load Regulation vs. Temperature 04500-025 1.1 Figure 15. ADR431 Minimum Headroom vs. Temperature 2.5 15 9 6 3 0 –40 –25 –10 5 20 35 50 65 80 95 110 TEMPERATURE (°C) 125 2.0 –40°C 1.5 +25°C 1.0 +125°C 0.5 0 –10 –5 0 LOAD CURRENT (mA) Figure 13. ADR435 Load Regulation vs. Temperature 5 10 04500-026 SUPPLY VOLTAGE HEADROOM (V) 12 04500-023 LOAD REGULATION (ppm/mA) IL = 0mA to 10mA Figure 16. ADR435 Supply Voltage Headroom vs. Load Current over Temperature Rev. N | Page 12 of 23 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 1.9 NO LOAD MINIMUM HEADROOM (V) 1.7 CL = 0.01µF NO INPUT CAPACITOR VOUT = 1V/DIV 1.5 1.3 1.1 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) TIME = 4µs/DIV 04500-027 0.9 –40 Figure 17. ADR435 Minimum Headroom vs. Temperature 04500-031 VIN = 2V/DIV Figure 20. ADR431 Turn-On Response Settling Time, 0.01 µF Load Capacitor 20 VIN = 7V TO 18V VOUT = 1V/DIV 12 CIN = 0.01µF NO LOAD 8 4 0 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) 04500-028 –4 –40 TIME = 4µs/DIV 04500-032 VIN = 2V/DIV Figure 21. ADR431 Turn-Off Settling Time Response Figure 18. ADR435 Line Regulation vs. Temperature CIN = 0.01µF NO LOAD BYPASS CAPACITOR = 0µF LINE INTERRUPTION VOUT = 1V/DIV VIN = 500mV/DIV VOUT = 50mV/DIV TIME = 4µs/DIV TIME = 100µs/DIV Figure 22. ADR431 Line Transient Response Figure 19. ADR431 Turn-On Settling Time Response, No Load Rev. N | Page 13 of 23 04500-033 VIN = 2V/DIV 04500-030 LINE REGULATION (ppm/V) 16 ADR430/ADR431/ADR433/ADR434/ADR435 BYPASS CAPACITOR = 0.1µF Data Sheet LINE INTERRUPTION VIN = 500mV/DIV VOUT = 50mV/DIV TIME = 1s/DIV Figure 23. ADR431 Line Transient Response, 0.1 µF Bypass Capacitor 04500-037 TIME = 100µs/DIV 04500-034 2µV/DIV Figure 26. ADR435 0.1 Hz to 10.0 Hz Voltage Noise 1µV/DIV TIME = 1s/DIV Figure 24. ADR431 0.1 Hz to 10.0 Hz Voltage Noise 04500-038 TIME = 1s/DIV 04500-035 50µV/DIV Figure 27. ADR435 10 Hz to 10 kHz Voltage Noise 14 NUMBER OF PARTS 12 10 8 6 4 50µV/DIV 0 –110 –90 04500-036 TIME = 1s/DIV –70 –50 –30 –10 10 30 50 DEVIATION (PPM) Figure 25. ADR431 10 Hz to 10 kHz Voltage Noise Figure 28. ADR431 Typical Hysteresis Rev. N | Page 14 of 23 70 90 110 04500-029 2 Data Sheet ADR430/ADR431/ADR433/ADR434/ADR435 10 50 45 –10 RIPPLE REJECTION (dB) 35 30 25 ADR435 20 15 ADR433 –30 –50 –70 –90 –110 10 ADR430 5 –150 1k 10k FREQUENCY (Hz) 100k 10 100 1k 10k 100k FREQUENCY (Hz) Figure 29. Output Impedance vs. Frequency Figure 30. Ripple Rejection vs. Frequency Rev. N | Page 15 of 23 1M 04500-040 0 100 –130 04500-039 OUTPUT IMPEDANCE (Ω) 40 ADR430/ADR431/ADR433/ADR434/ADR435 Data Sheet THEORY OF OPERATION The ADR430/ADR431/ADR433/ADR434/ADR435 series of references uses a reference generation technique known as XFET. This technique yields a reference with low supply current, optimal thermal hysteresis, and exceptionally low noise. The core of the XFET reference consists of two junction field effect transistors (JFETs), one of which has an extra channel implant to raise its pinch off voltage. The two JFETs run at the same drain current, and the difference in pinch off voltage is amplified to form a highly stable voltage reference. When these devices are used in applications at higher currents, use the following equation to account for the temperature effects due to the power dissipation increases: The intrinsic reference voltage is around 0.5 V with a negative temperature coefficient of about −120 ppm/°C. This slope is essentially constant to the dielectric constant of silicon and can be compensated closely by adding a correction term generated in the same fashion as the proportional to absolute temperature (PTAT) term used to compensate band gap references. The primary advantage of an XFET reference is its correction term, which is ~30 times lower and requires less correction than that of a band gap reference. Because most of the noise of a band gap reference comes from the temperature compensation circuitry, the XFET results in much lower noise. BASIC VOLTAGE REFERENCE CONNECTIONS TJ = PD × θJA + TA where: TJ and TA are the junction and ambient temperatures, respectively. PD is the device power dissipation. θJA is the device package junction to ambient thermal resistance. Voltage references, in general, require a bypass capacitor connected from VOUT to ground. The circuit in Figure 32 shows the basic configuration for the ADR430/ADR431/ADR433/ADR434/ ADR435 family of references. Other than a 0.1 µF capacitor at the output to help improve noise suppression, a large output capacitor at the output is not required for circuit stability. ADR430/ADR431 ADR433/ADR434 ADR435 The ADR430/ADR431/ADR433/ADR434/ADR435 devices are created by on-chip adjustment of R2 and R3 to achieve 2.048 V to 5.000 V at the reference output. VIN I1 I1 ADR43x IPTAT + 0.1µF NIC GND 8 DNC COMP VOUT TOP VIEW 6 3 (Not to Scale) 4 5 TRIM 2 10µF 7 NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. (1) where: G is the gain of the reciprocal of the divider ratio. ∆VP is the difference in pinch-off voltage between the two JFETs. R1 is a resistor, as shown in Figure 31. IPTAT is the positive temperature coefficient correction current. 1 0.1µF 04500-044 DNC VIN Figure 31 shows the basic topology of the ADR430/ADR431/ ADR433/ADR434/ADR435 series. The temperature correction term is provided by a current source with a value designed to be PTAT. The general equation is VOUT = G (ΔVP – R1 × IPTAT) (2) Figure 32. Basic Voltage Reference Configuration NOISE PERFORMANCE The noise generated by the ADR430, ADR431, and ADR433 family of references is typically less than or equal to 3.75 µV p-p over the 0.1 Hz to 10.0 Hz band for. Figure 24 shows the 0.1 Hz to 10.0 Hz noise of the ADR431, which is only 3.5 µV p-p. The noise measurement is made with a band-pass filter composed of a two-pole, high-pass filter with a corner frequency at 0.1 Hz and a two-pole, low-pass filter with a corner frequency at 10.0 Hz. HIGH FREQUENCY NOISE VOUT The total noise generated by the ADR430/ADR431/ADR433/ ADR434/ADR435 family of references is composed of the reference noise and the op amp noise. Figure 33 shows the wideband noise from 10 Hz to 25 kHz. An internal node of the op amp is available on Pin 7, and by overcompensating the op amp, the overall noise can be reduced. R2 * R1 *EXTRA CHANNEL IMPLANT VOUT = G(ΔVP – R1 × IPTAT) R3 GND 04500-002 ΔVP Figure 31. Simplified Schematic Device Power Dissipation Considerations The ADR430/ADR431/ADR433/ADR434/ADR435 family of references is guaranteed to deliver load currents up to 10 mA with an input voltage that ranges from 4.1 V to 18 V. Consider that, in a closed-loop configuration, the effective output impedance of an op amp is as follows: RO = rO 1 + AVO β where: RO is the apparent output impedance. rO is the output resistance of the op amp. Rev. N | Page 16 of 23 (3) ADR430/ADR431/ADR433/ADR434/ADR435 However, references are used increasingly to drive the reference input of an analog-to-digital (ADC) that may present a dynamic, switching capacitive load. Large capacitors, in the microfarad range, reduce the change in reference voltage to less than one-half LSB. Figure 33 shows the ADR431 noise spectrum with various capacitive values to 50 µF. With no capacitive load, the noise spectrum is relatively flat at approximately 60 nV/√Hz to 70 nV/√Hz. With various values of capacitive loading, the predicted noise peaking becomes evident. 1000 ADR431 NO COMPENSATION CL = 1µF DNC VIN + 10µF 0.1µF NIC GND 1 8 2 7 DNC COMP 82kΩ VOUT TOP VIEW 6 (Not to Scale) 4 5 TRIM 10nF 3 0.1µF NOTES 1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. Figure 34. Compensated Reference The 82 kΩ resistor and 10 nF capacitor eliminate noise peaking (see Figure 35). Leave the COMP pin unconnected if unused. 100 CL = 10µF RC 82kΩ AND 10nF CL = 1µF RC 82kΩ AND 10nF CL = 50µF RC 82kΩ AND 10nF 10 10 CL = 50µF 100 100 1k FREQUENCY (Hz) 10k Figure 35. Noise with Compensation Network CL = 0µF 10 10 100 1k FREQUENCY (Hz) 10k TURN-ON SETTLING TIME 100k 04500-042 NOISE DENSITY (nV/√Hz) CL = 10µF ADR430/ADR431 ADR433/ADR434 ADR435 04500-003 Equation 3 shows that the apparent output impedance is approximately reduced by the excess loop gain; therefore, as the frequency increases, the excess loop gain decreases, and the apparent output impedance increases. A passive element whose impedance increases as its frequency increases is an inductor. When a capacitor is added to the output of an op amp or a reference, it forms a tuned circuit that resonates at a certain frequency and results in gain peaking. Gain peaking can be observed by using a model of an op amp with a single-pole response and some pure resistance in series with the output. Changing capacitive loads results in peaking at different frequencies. For most normal op amp applications with low capacitive loading (
ADR430ARMZ
物料型号: - ADR430/ADR431/ADR433/ADR434/ADR435

器件简介: - 这些是Analog Devices生产的超低噪声XFET电压基准源,具有低噪声、高准确度和低温度漂移性能。它们采用了Analog Devices特有的温度漂移曲率校正和额外植入的结型场效应晶体管(XFET)技术,最小化了电压随温度变化的非线性。

引脚分配: - 这些器件通常有8个引脚,包括供电(VIN)、输出电压(VOUT)、地(GND)、补偿输入(COMP)、修调(TRIM)等。

参数特性: - 输出电压精度:A级±3mV至±6mV,B级±1mV至±2mV。 - 温度系数:A级10ppm/°C,B级3ppm/°C。 - 线路调节:20ppm/V。 - 负载调节:15ppm/mA。 - 输出电流能力:源电流可达30mA,沉电流可达-20mA。 - 工作温度范围:-40°C至+125°C。

功能详解: - XFET参考源在较低的电流(800µA)和较低的供电电压余量(2V)下工作,比埋藏式齐纳二极管参考源的5V余量要低。这些参考源适用于5V系统,能够在不牺牲性能的情况下调整输出电压±0.5%的范围。

应用信息: - 适用于精密数据采集系统、高分辨率数据转换器、医疗仪器、工业过程控制系统和光学控制电路等。

封装信息: - 提供8引脚MSOP和8引脚窄体SOIC封装,所有版本均在扩展的工业温度范围内规格化。
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ADR430ARMZ
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