0.5 dB LSB, 6-Bit, Silicon Digital
Attenuator, 9 kHz to 40 GHz
ADRF5720
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
D5/CLK
D4/SERIN
D3/SEROUT
D2
D1
D0
ADRF5720
24
23
22
21
20
19
LE
1
18
VDD
PS
2
17
VSS
GND
3
16
GND
GND
4
15
GND
ATTIN
5
14
ATTOUT
GND
6
13
GND
SERIAL/
PARALLEL
INTERFACE
6-BIT DIGITAL
ATTENUATOR
12
PACKAGE
BASE
GND
15959-001
11
GND
10
GND
9
GND
8
GND
7
GND
Ultrawideband frequency range: 9 kHz to 40 GHz
Attenuation range: 0.5 dB steps to 31.5 dB
Low insertion loss with impedance match
2.0 dB up to 18 GHz
2.8 dB up to 26 GHz
4.5 dB up to 40 GHz
Attenuation accuracy with impedance match
±(0.20 + 1.0% of attenuation state) up to 18 GHz
±(0.20 + 1.5% of attenuation state) up to 26 GHz
±(0.40+ 3.0% of attenuation state) up to 40 GHz
Typical step error with impedance match
±0.25 dB up to 26 GHz
±0.65 dB up to 40 GHz
High input linearity
P0.1dB insertion loss state: 30 dBm
P0.1dB other attenuation states: 27 dBm
IP3: 50 dBm typical
High RF input power handling: 27 dBm average, 30 dBm peak
Tight distribution in relative phase
No low frequency spurious signals
SPI and parallel mode control, CMOS/LVTTL compatible
RF amplitude settling time (0.1 dB of final RF output): 8 µs
24-terminal, 4 mm × 4 mm LGA package
Pin-compatible with ADRF5730, fast switching version
GND
FEATURES
Figure 1.
APPLICATIONS
Industrial scanners
Test and instrumentation
Cellular infrastructure: 5G millimeter wave
Military radios, radars, electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
GENERAL DESCRIPTION
The ADRF5720 is a silicon, 6-bit digital attenuator with 31.5 dB
attenuation control range in 0.5 dB steps.
The ADRF5720 is pin-compatible with the ADRF5730, the fast
switching version, which operates from 100 MHz to 40 GHz.
This device operates from 9 kHz to 40 GHz with better than 4.5 dB
of insertion loss and excellent attenuation accuracy. The ATTIN
port of the ADRF5720 has a radio frequency (RF) input power
handling capability of 27 dBm average and 30 dBm peak for all
states.
The ADRF5720 RF ports are designed to match a characteristic
impedance of 50 Ω. For wideband applications, impedance
matching on the RF transmission lines can further optimize high
frequency insertion loss, return loss, and attenuation accuracy
characteristics. Refer to the Electrical Specifications section, the
Typical Performance Characteristics section, and the Applications
Information section for more details.
The ADRF5720 requires a dual supply voltage of +3.3 V and
−3.3 V. The device features serial peripheral interface (SPI),
parallel mode control, and complementary metal-oxide
semiconductor (CMOS)-/low voltage transistor to transistor
logic (LVTTL)-compatible controls.
Rev. B
The ADRF5720 comes in a 24-terminal, 4 mm × 4 mm, RoHS
compliant, land grid array (LGA) package and operates from
−40°C to +105°C.
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ADRF5720
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Insertion Loss, Return Loss, State Error, Step Error, and
Relative Phase ................................................................................8
Functional Block Diagram .............................................................. 1
Input Power Compression and Third-Order Intercept ......... 12
General Description ......................................................................... 1
Theory of Operation ...................................................................... 13
Revision History ............................................................................... 2
Power Sequence .......................................................................... 13
Specifications..................................................................................... 3
RF Input and Output ................................................................. 13
Electrical Specifications ............................................................... 3
Serial or Parallel Mode Selection ............................................. 14
Timing Specifications .................................................................. 5
Serial Mode Interface ................................................................. 14
Absolute Maximum Ratings............................................................ 6
Parallel Mode Interface.............................................................. 15
Power Derating Curves ................................................................ 6
Applications Information .............................................................. 16
ESD Caution .................................................................................. 6
Evaluation Board ........................................................................ 16
Pin Configuration and Function Descriptions ............................. 7
Probe Matrix Board ................................................................... 18
Interface Schematics..................................................................... 7
Outline Dimensions ....................................................................... 19
Typical Performance Characteristics ............................................. 8
Ordering Guide .......................................................................... 19
REVISION HISTORY
11/2020—Rev. A to Rev. B
Changes to tCH Parameter and tCO Parameter, Table 2 ................. 5
Changes to Figure 26 and Figure 27............................................. 11
Changes to Serial Mode Interface Section, Using SEROUT Section,
and Figure 34 ................................................................................... 14
Deleted Figure 33; Renumbered Sequentially ............................ 14
3/2020—Rev. 0 to Rev. A
Changes to RF Power Parameter, Table 1 .......................................5
Changes to Table 3.............................................................................6
Changes to Power Supply Section ................................................ 13
Added Power-Up State Section..................................................... 13
Moved Serial or Parallel Mode Selection Section and Table 7;
Renumbered Sequentially ......................................................................14
7/2018—Revision 0: Initial Version
Rev. B | Page 2 of 19
Data Sheet
ADRF5720
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
VDD = 3.3 V, VSS = −3.3 V, digital voltages = 0 V or VDD, case temperature (TCASE) = 25°C, and 50 Ω system, unless otherwise noted.
Table 1.
Parameter
FREQUENCY RANGE
INSERTION LOSS (IL)
With Impedance Match
Without Impedance Match
RETURN LOSS
With Impedance Match
Without Impedance Match
ATTENUATION
Range
Step Size
Accuracy
With Impedance Match
Without Impedance Match
Test Conditions/Comments
See Figure 43
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
See Figure 42
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
ATTIN and ATTOUT, all attenuation states
See Figure 43
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
See Figure 42
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
Between minimum and maximum
attenuation states
Between any successive attenuation states
Referenced to insertion loss
See Figure 43
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
See Figure 42
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
Rev. B | Page 3 of 19
Min
0.009
Typ
Max
40,000
Unit
MHz
1.5
2.0
2.8
3.7
4.5
dB
dB
dB
dB
dB
1.6
2.1
2.7
3.6
4.6
dB
dB
dB
dB
dB
18
17
17
15
15
dB
dB
dB
dB
dB
18
15
15
14
11
dB
dB
dB
dB
dB
31.5
dB
0.5
dB
±(0.15 + 1.0% of state)
±(0.20 + 1.0% of state)
±(0.20 + 1.5% of state)
±(0.25 + 2.5% of state)
±(0.40 + 3.0% of state)
dB
dB
dB
dB
dB
±(0.15 + 1.0% of state)
±(0.25 + 1.0% of state)
±(0.20 + 1.5% of state)
±(0.25 + 2.0% of state)
±(0.40 + 5.0% of state)
dB
dB
dB
dB
dB
ADRF5720
Parameter
Step Error
With Impedance Match
Without Impedance Match
RELATIVE PHASE
With Impedance Match
Without Impedance Match
SWITCHING CHARACTERISTICS
Rise and Fall Time (tRISE and tFALL)
On and Off Time (tON and tOFF)
RF Amplitude Settling Time
0.1 dB
0.05 dB
Overshoot
Undershoot
RF Phase Settling Time
5°
1°
INPUT LINEARITY 1
Data Sheet
Test Conditions/Comments
Between any successive state
See Figure 43
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
See Figure 42
9 kHz to 10 GHz
10 GHz to 18 GHz
18 GHz to 26 GHz
26 GHz to 35 GHz
35 GHz to 40 GHz
Referenced to insertion loss
See Figure 43
10 GHz
18 GHz
26 GHz
35 GHz
40 GHz
See Figure 42
10 GHz
18 GHz
26 GHz
35 GHz
40 GHz
All attenuation states at input power = 10 dBm
10% to 90% of RF output
50% triggered control (CTL) to 90% of RF output
Min
50% triggered CTL to 0.1 dB of final RF output
50% triggered CTL to 0.05 dB of final RF output
f = 5 GHz
50% triggered CTL to 5° of final RF output
50% triggered CTL to 1° of final RF output
1 MHz to 30 GHz
Typ
Max
Unit
±0.15
±0.23
±0.25
±0.50
±0.65
dB
dB
dB
dB
dB
±0.15
±0.23
±0.25
±0.40
±0.70
dB
dB
dB
dB
dB
15
30
50
75
100
Degrees
Degrees
Degrees
Degrees
Degrees
15
30
50
80
105
Degrees
Degrees
Degrees
Degrees
Degrees
1.3
3.9
µs
µs
8
10
2
−1.5
µs
µs
dB
dB
3
4
µs
µs
30
27
50
dBm
dBm
dBm
0.1 dB Power Compression (P0.1dB)
Insertion Loss State
Other Attenuation States
Third-Order Intercept (IP3)
DIGITAL CONTROL INPUTS
Voltage
Low (VINL)
High (VINH)
Current
Low (IINL)
High (IINH)
Two-tone input power = 14 dBm per tone,
Δf = 1 MHz, all attenuation states
LE, PS, D0, D1, D2, D3/SEROUT 2,
D4/SERIN, D5/CLK pins
0
1.2
D0, D1, D2
LE, PS, D3/SEROUT2, D4/SERIN, D5/CLK pins
Rev. B | Page 4 of 19
0.8
3.3