EV1HMC558ALC3B

5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A Data Sheet FUNCTIONAL BLOCK DIAGRAM Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 dB typical at 5.5 GHz to 10 GHz LO to intermediate frequency (IF) isolation: 45 dB typical at 10 GHz to 14 GHz Input third-order intercept (IIP3): 21 dBm typical at 10 GHz to 14 GHz Input P1dB: 11.5 dBm typical at 10 GHz to 14 GHz Input second-order intercept (IIP2): 55 dBm typical at 10 GHz to 14 GHz Passive double-balanced topology Wide IF bandwidth: dc to 6 GHz 12-lead ceramic leadless chip carrier package HMC558A LO RF IF 15000-001 FEATURES Figure 1. APPLICATIONS Point to point microwave radios Point to multipoint radios Military end use Instrumentation, automatic test equipment (ATE), and sensors GENERAL DESCRIPTION The HMC558A is a general-purpose, double-balanced mixer in a leadless RoHS compliant SMT package that can be used as an upconverter or downconverter between 5.5 GHz and 14 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process, and requires no external components or matching circuitry. Rev. C The HMC558A provides excellent LO to RF and LO to IF isolation due to optimized balun structures, and operates with LO drive levels as low as 9 dBm. The RoHS compliant HMC558A eliminates the need for wire bonding, and is compatible with high volume surface-mount manufacturing techniques. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2016–2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC558A Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Downconverter Performance ......................................................6 Applications ....................................................................................... 1 Upconverter Performance ............................................................9 Functional Block Diagram .............................................................. 1 Return Loss and Isolation Performance .................................. 10 General Description ......................................................................... 1 Spurious Performance ............................................................... 12 Revision History ............................................................................... 2 Theory of Operation ...................................................................... 13 Specifications..................................................................................... 3 Applications Information .............................................................. 14 Absolute Maximum Ratings ............................................................ 4 Typical Application Circuit ....................................................... 14 Thermal Resistance ...................................................................... 4 Evaluation Board Information.................................................. 14 ESD Caution .................................................................................. 4 Outline Dimensions ....................................................................... 15 Pin Configuration and Function Descriptions ............................. 5 Ordering Guide .......................................................................... 15 Interface Schematics..................................................................... 5 Typical Performance Characteristics ............................................. 6 REVISION HISTORY 7/2018—Rev. B to Rev. C Changes to Spurious Performance Section ................................. 12 Added IF Spurious Performance Table ........................................ 12 12/2017—Rev. A to Rev. B Changes to Figure 16 ........................................................................ 7 Changes to Ordering Guide .......................................................... 15 6/2017—Rev. 0 to Rev. A Changes E-12-1 to E-12-4 ............................................ Throughout Updated Outline Dimensions ....................................................... 15 Changes to Ordering Guide .......................................................... 15 11/2016—Revision 0: Initial Version Rev. C | Page 2 of 15 Data Sheet HMC558A SPECIFICATIONS LO drive level = 15 dBm, TA = 25°C, IF = 100 MHz, upper sideband, unless otherwise noted. All measurements performed as a downconverter. Table 1. Parameter RF FREQUENCY RANGE LO FREQUENCY RANGE LO DRIVE LEVEL IF FREQUENCY RANGE PERFORMANCE AT RF = 5.5 GHz to 10 GHz Conversion Loss Single Sideband (SSB) Noise Figure Input Third-Order Intercept (IIP3) Input 1 dB Compression Point (IP1dB) Input Second-Order Intercept (IIP2) RF to IF Isolation LO to RF Isolation LO to IF Isolation PERFORMANCE AT RF = 10 GHz to 14 GHz Conversion Loss SSB Noise Figure IIP3 IP1dB IIP2 RF to IF Isolation LO to RF Isolation LO to IF Isolation Min 5.5 5.5 Typ Max 14 14 15 DC 15 8 35 20 16 10 30 20 Rev. C | Page 3 of 15 6 Unit GHz GHz dBm GHz 7.5 7.5 17.5 10 50 16 45 35 9.5 dB dB dBm dBm dB dB dB dB 8.5 10 21 11.5 55 19 40 45 10 dB dB dBm dBm dB dB dB dB HMC558A Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter RF Input Power LO Input Power IF Input Power IF Source/Sink Current Maximum Junction Temperature Continuous PDISS (T = 85°C) (Derate 5.5 mW/°C Above 85°C) Operating Temperature Range Storage Temperature Range Lead Temperature Range (Soldering 60 sec) Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Field Induced Charged Device Model (FICDM) Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. Rating 25 dBm 25 dBm 25 dBm 3 mA 175°C 495 mW Table 3. Thermal Resistance Package Type E-12-41 1 −40°C to +85°C −65°C to +150°C −65°C to +150°C 2500 V (Class 2) 1000 V (Class C5) θJC 180 Unit °C/W See JEDEC standard JESD51-2 for additional information on optimizing the thermal impedance (PCB with 3 × 3 vias). ESD CAUTION Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. C | Page 4 of 15 Data Sheet HMC558A 3 NIC NIC HMC558A TOP VIEW (Not to Scale) 4 5 6 9 GND 8 RF 7 GND NOTES 1. NIC = NO INTERNAL CONNECTION. 2. EXPOSED PAD. CONNECT THE EXPOSED PAD TO A LOW IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE. 15000-002 2 10 GND LO GND 11 IF 1 12 GND GND NIC PIN CONFIGURATION AND FUNCTION DESCRIPTIONS Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. 1, 3, 4, 6, 7, 9 2 5 Mnemonic GND LO IF 8 10, 11, 12 RF NIC EPAD Description Ground. See Figure 6 for the ground interface schematic. Local Oscillator Port. This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the LO interface schematic. DC-Coupled IF. For applications not requiring operation to dc, dc block this port externally using a series capacitor whose value is chosen to pass the necessary IF frequency range. For operation to dc, this pin must not source or sink more than 3 mA of current, or device nonfunction and possible device failure may result. See Figure 5 for the IF interface schematic. RF Port. This pin is ac-coupled internally and matched to 50 Ω. See Figure 3 for the RF interface schematic. No Internal Connection. These pins can be grounded. Exposed Pad. Connect the exposed pad to a low impedance thermal and electrical ground plane. Figure 5. IF Interface Figure 3. RF Interface GND 15000-004 LO 15000-005 IF 15000-006 RF 15000-003 INTERFACE SCHEMATICS Figure 6. Ground Interface Figure 4. LO Interface Rev. C | Page 5 of 15 HMC558A Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS DOWNCONVERTER PERFORMANCE Data taken as downconverter, upper sideband (low-side LO), TA = 25°C, LO drive level = 15 dBm unless otherwise specified. 0 0 –40°C +25°C +85°C –2 –4 CONVERSION GAIN (dB) –6 –8 –10 –12 –14 –16 –8 –10 –12 –14 –16 –18 5 6 7 8 9 10 11 12 13 14 15 16 –20 7 8 9 10 11 12 13 14 15 16 32.5 30.0 27.5 27.5 25.0 25.0 22.5 22.5 20.0 20.0 15.0 12.5 17.5 15.0 12.5 10.0 10.0 7.5 7.5 5.0 9dBm 12dBm 15dBm 18dBm 20dBm 2.5 5.0 0 –40°C +25°C +85°C 4 5 –2.5 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) –5.0 15000-108 2.5 0 0 CONVERSION GAIN (dB) –4 –6 –8 –10 –12 –14 13 RF FREQUENCY (GHz) 14 15 16 12 13 14 15 16 16 –14 –20 15000-109 12 11 –12 –18 11 10 –10 –16 10 9 –8 –18 9 8 –6 –16 8 7 9dBm 12dBm 15dBm 18dBm 20dBm –2 –4 7 6 Figure 11. Input IP3 vs. RF Frequency at Various LO Powers, IF = 100 MHz –40°C +25°C +85°C 6 5 RF FREQUENCY (GHz) Figure 8. Input IP3 vs. RF Frequency at Various Temperatures, IF = 100 MHz –2 4 15000-111 IP3 (dBm) 17.5 –20 6 Figure 10. Conversion Gain vs. RF Frequency at Various LO Powers, IF = 100 MHz 30.0 0 5 RF FREQUENCY (GHz) Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures, IF = 100 MHz CONVERSION GAIN (dB) 4 15000-110 4 15000-107 –18 RF FREQUENCY (GHz) IP3 (dBm) –6 15000-112 CONVERSION GAIN (dB) –4 –20 9dBm 12dBm 15dBm 18dBm 20dBm –2 6 7 8 9 10 11 12 13 RF FREQUENCY (GHz) Figure 9. Conversion Gain vs. RF Frequency at Various Temperatures, IF = 2 GHz 14 15 Figure 12. Conversion Gain vs. RF Frequency at Various LO Powers, IF = 2 GHz Rev. C | Page 6 of 15 Data Sheet 18 –40°C +25°C +85°C 14 22.5 20.0 17.5 15.0 P1dB (dBm) 12 12.5 10.0 7.5 5.0 2.5 0 –2.5 10 8 6 4 2 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) 0 0 6 7 8 9 10 11 12 13 14 15 16 Figure 16. Input P1dB vs. RF Frequency at Various Temperatures, IF = 100 MHz 25 –40°C +25°C +85°C –40°C +25°C +85°C 20 –5.0 –7.5 NOISE FIGURE (dB) CONVERSION GAIN (dB) 5 RF FREQUENCY (GHz) Figure 13. Input IP3 vs. RF Frequency at Various Temperatures, IF = 2 GHz –2.5 4 15000-117 –5.0 –7.5 –40°C +25°C +85°C 16 15000-113 IP3 (dBm) 32.5 30.0 27.5 25.0 HMC558A –10.0 –12.5 –15.0 –17.5 –20.0 15 10 5 0 1 2 3 4 5 6 7 8 9 IF FREQUENCY (GHz) 4 5 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) Figure 17. SSB Noise Figure vs. RF Frequency at Various Temperatures, IF = 100 MHz 25 9dBm 12dBm 15dBm 18dBm 20dBm 9dBm 12dBm 15dBm 18dBm NOISE FIGURE (dB) 20 15 10 6 7 8 9 10 11 12 13 14 15 RF FREQUENCY (GHz) 16 0 4 5 6 7 8 9 10 11 12 RF FREQUENCY (GHz) 13 14 15 16 15000-123 5 15000-116 IP3 (dBm) Figure 14. Conversion Gain vs. IF Frequency at Various Temperatures 35.0 32.5 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 –2.5 –5.0 –7.5 –10.0 –12.5 0 15000-114 –25.0 15000-120 –22.5 Figure 18. SSB Noise Figure vs. RF Frequency at Various LO Powers, IF = 100 MHz Figure 15. Input IP3 vs. RF Frequency at Various LO Powers, IF = 2 GHz Rev. C | Page 7 of 15 Data Sheet 90 80 80 70 70 60 60 50 40 40 30 30 20 20 4 5 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) 0 60 IP2 (dBm) 70 50 40 9 10 11 12 13 14 15 16 50 40 30 30 20 20 10 10 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) 0 15000-126 7 8 80 60 6 7 90 70 0 6 Figure 21. Input IP2 vs. RF Frequency at Various LO Powers, IF = 100 MHz –40°C +25°C +85°C 80 5 RF FREQUENCY (GHz) Figure 19. Input IP2 vs. RF Frequency at Various Temperatures, IF = 100 MHz 90 4 9dBm 12dBm 15dBm 18dBm 20dBm 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) Figure 20. Input IP2 vs. RF Frequency at Various Temperatures, IF = 2000 MHz Figure 22. Input IP2 vs. RF Frequency, at Various LO Powers, IF = 2000 MHz Rev. C | Page 8 of 15 15000-129 0 9dBm 12dBm 15dBm 18dBm 20dBm 10 –40°C +25°C +85°C 10 IP2 (dBm) 50 15000-128 IP2 (dBm) 90 15000-125 IP2 (dBm) HMC558A Data Sheet HMC558A UPCONVERTER PERFORMANCE Data taken as upconverter, upper sideband, TA = 25°C, LO drive level = 15 dBm unless otherwise specified. –2 –4 –4 –6 –8 –10 –8 –12 –14 –14 –16 –16 –18 6 7 8 9 10 11 12 13 14 15 16 –20 27.5 32.5 27.5 22.5 20.0 20.0 17.5 17.5 IP3 (dBm) 25.0 22.5 15.0 12.5 10.0 5.0 2.5 2.5 0 –2.5 –2.5 8 9 10 11 12 13 14 15 16 RF FREQUENCY (GHz) 15000-031 0 7 10 11 12 13 14 15 16 10.0 7.5 6 9 12.5 5.0 5 8 15.0 7.5 4 7 12dBm 15dBm 18dBm 20dBm 30.0 25.0 –5.0 6 Figure 25. Conversion Gain vs. RF Frequency for Various LO Powers, IF = 100 MHz –40°C +25°C +85°C 30.0 5 RF FREQUENCY (GHz) Figure 23. Conversion Gain vs. RF Frequency for Various Temperatures, IF = 100 MHz 32.5 4 –5.0 4 5 6 7 8 9 10 11 12 13 14 15 16 RF FREQUENCY(GHz) Figure 26. Input IP3 vs. RF Frequency for Various LO Powers, IF = 100 MHz Figure 24. Input IP3 vs. RF Frequency for Various Temperatures, IF = 100 MHz Rev. C | Page 9 of 15 15000-033 5 15000-030 4 15000-032 –18 RF FREQUENCY (GHz) IP3 (dBm) –6 –10 –12 –20 12dBm 15dBm 18dBm 20dBm –2 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 0 –40°C +25°C +85°C HMC558A Data Sheet RETURN LOSS AND ISOLATION PERFORMANCE Data taken at TA = 25°C, LO drive level = 15 dBm unless otherwise specified. 80 –40°C +25°C +85°C 70 ISOLATION (dB) 40 LO TO IF 40 30 20 10 10 4 5 6 7 8 9 10 11 12 13 14 15 16 LO FREQUENCY (GHz) Figure 27. LO to RF and LO to IF Isolation vs. LO Frequency at Various Temperatures, IF = 100 MHz 40 0 4 5 6 7 8 9 10 11 12 13 14 15 16 Figure 29. LO to RF and LO to IF Isolation vs. LO Frequency at Various LO Powers, IF = 100 MHz 40 9dBm 12dBm 15dBm 18dBm 35 30 20 15 25 20 15 10 10 5 5 5 6 7 8 9 10 11 12 RF FREQUENCY (GHz) 13 14 15 16 0 15000-122 4 Figure 28. RF to IF Isolation vs. RF Frequency at Various Temperatures, IF = 100 MHz 4 5 6 7 8 9 10 11 12 RF FREQUENCY (GHz) 13 14 15 16 15000-119 ISOLATION (dB) 30 25 0 LO TO IF LO FREQUENCY (GHz) –40°C +25°C +85°C 35 ISOLATION (dB) 50 20 15000-115 ISOLATION (dB) LO TO RF 50 0 LO TO RF 60 60 30 9dBm 12dBm 15dBm 18dBm 20dBm 70 15000-118 80 Figure 30. RF to IF Isolation vs. RF Frequency at Various LO Powers, IF = 100 MHz Rev. C | Page 10 of 15 Data Sheet 10 HMC558A 5 –40°C +25°C +85°C 5 –5 –10 –15 –20 –25 –15 –20 –25 –30 –30 –35 –35 4 5 6 7 8 9 10 11 12 13 14 15 16 LO FREQUENCY (GHz) Figure 31. LO Return Loss vs. LO Frequency at Various Temperatures 5 0 –40 –40°C +25°C +85°C –10 –15 –20 –25 –30 1.1 2.1 3.1 4.1 5.1 6.1 7.1 IF FREQUENCY (GHz) 8.1 9.1 10.1 15000-124 –35 –40 0.1 4 5 6 7 8 9 10 11 12 RF FREQUENCY (GHz) 13 14 15 16 Figure 33. RF Return Loss vs. RF Frequency at Various Temperatures, IF = 100 MHz, LO Power = 15 dBm –5 RETURN LOSS (dB) –10 15000-224 RETURN LOSS (dB) –5 15000-121 RETURN LOSS (dB) 0 –40 –40°C +25°C +85°C 0 Figure 32. IF Return Loss vs. IF Frequency at Various Temperatures, LO Power = 15 dBm, LO Frequency = 11 GHz Rev. C | Page 11 of 15 HMC558A Data Sheet SPURIOUS PERFORMANCE Mixer spurious products are measured in decibels from either below the RF or the IF output power level. N/A means not applicable. IF frequency = 100 MHz at −10 dBm, LO frequency = 10.0 GHz at 15 dBm are applied. Spur values are (M × IF) + (N × LO). 0 RF frequency = 8.1 GHz at −10 dBm, LO frequency = 8.0 GHz at 15 dBm are applied. Spur values are (M × RF) − (N × LO), IF output = 100 MHz. M × RF 0 1 2 3 4 0 N/A +10.3 +83.6 +79 +76.3 1 −1 0 +59 +84.3 +78.4 N × LO 2 +24.7 +22.7 +64 +77.8 +84.6 3 +24.4 +34.9 +58.9 +69.6 +85.7 4 +35.9 +54.3 +81.9 +75.7 +91.3 M × IF Rev. C | Page 12 of 15 −4 −3 −2 −1 0 +1 +2 +3 +4 N/A N/A N/A N/A +69.8 N/A N/A N/A 1 N/A +60 +56.5 0 −1.4 +0.3 +55.8 +60.6 N/A N × LO 2 N/A +77 +70.2 +29.1 +31.6 +28 +71.8 +76.8 N/A 3 N/A +82.7 +71.8 +24.6 +27 +24.9 +74.4 +84.2 N/A 4 N/A N/A +74.8 +45.5 +37.5 +45.7 +75.5 +91.2 N/A Data Sheet HMC558A THEORY OF OPERATION The HMC558A is a general-purpose double balanced mixer in a leadless RoHS compliant SMT package that can be used as an upconverter or downconverter between 5.5 GHz and 14 GHz. This mixer is fabricated in a GaAs MESFET process, and requires no external components or matching circuitry. The HMC558A provides excellent LO to RF and LO to IF isolation due to optimized balun structures and operates with LO drive levels as low as 9 dBm. The RoHS compliant HMC558A eliminates the need for wire bonding, and is compatible with high volume surface mount manufacturing techniques. Rev. C | Page 13 of 15 HMC558A Data Sheet APPLICATIONS INFORMATION EVALUATION BOARD INFORMATION TYPICAL APPLICATION CIRCUIT LO 11 1 9 2 8 3 7 4 5 The circuit board used in an application must use RF circuit design techniques. Signal lines must have 50 Ω impedance, and the package ground leads and exposed pad must be connected directly to the ground plane, similarly to that shown in Figure 35. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 35 is available from Analog Devices, Inc., upon request. 10 RF 6 IF 15000-028 12 LO Figure 34. Typical Application Circuit RF J2 J1 IF U1 J3 Figure 35. HMC558A Evaluation Board Top Layer Table 5. Bill of Materials for the EV1HMC558ALC3B Evaluation Board Level 1 1 1 1 Item 1 2 3 4 Part Number 117611-1 104935 105192 HMC558ALC3B Quantity 1 2 1 1 Reference Designator J1 to J2 J3 U1 Rev. C | Page 14 of 15 Description PCB, evaluation board 2.92 mm connector, SRI SMA connector, Johnson Device under test (DUT) Data Sheet HMC558A OUTLINE DIMENSIONS 0.36 0.30 0.24 0.08 BSC 10 0.50 BSC PIN 1 12 1 9 3 7 TOP VIEW 0.90 0.80 0.70 1.60 1.50 SQ 1.40 EXPOSED PAD 6 0.32 BSC 4 BOTTOM VIEW 1.00 REF 2.10 BSC SIDE VIEW FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. PKG-004837 SEATING PLANE 03-02-2017-A PIN 1 INDICATOR 3.05 2.90 SQ 2.75 Figure 36. 12-Terminal Ceramic Leadless Chip Carrier [LCC] (E-12-4) Dimensions shown in millimeters ORDERING GUIDE Model1 HMC558ALC3B Temperature Range −40°C to +85°C HMC558ALC3BTR −40°C to +85°C HMC558ALC3BTR-R5 −40°C to +85°C EV1HMC558ALC3B 1 Description 12-Terminal Ceramic Leadless Chip Carrier [LCC] 12-Terminal Ceramic Leadless Chip Carrier [LCC] 12-Terminal Ceramic Leadless Chip Carrier [LCC] Evaluation PCB Assembly Package Option E-12-4 Package Body Material Alumina Ceramic E-12-4 Alumina Ceramic E-12-4 Alumina Ceramic The HMC558ALC3B, HMC558ALC3BTR, and HMC558ALC3BTR-R5 are RoHS Compliant. ©2016–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D15000-0-7/18(C) Rev. C | Page 15 of 15 Lead Finish Gold over Nickel Gold over Nickel Gold over Nickel MSL Rating MSL3 MSL3 MSL3