EV1HMC618ALP3

HMC618LP3 / 618LP3E v08.1210 Typical Applications Features The HMC618LP3E is ideal for: Noise Figure: 0.75 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure OIP3: 36 dBm • Repeaters and Femto Cells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output TE 16 Lead 3x3mm SMT Package: 9 mm2 Functional Diagram General Description LE The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3(E) offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). B SO Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Electrical Specifications O TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V Parameter Vdd = 5 Vdc Min. Frequency Range Gain Typ. Max. Min. 1200 - 1700 19 Gain Variation Over Temperature Typ. Max. Min. 1700 - 2000 23 16 0.012 13.5 MHz 17 dB 0.008 dB/°C Noise Figure 0.65 22.5 18 19.5 dB 13 12.5 10 dB 20 dBm Output Power for 1 dB Compression (P1dB) 14.5 19 16.5 1.1 Units Input Return Loss Output Return Loss 0.75 Max. 2000 - 2200 19 0.008 0.85 Typ. 20 0.85 18 1.15 dB Saturated Output Power (Psat) 20.5 20.5 20.5 dBm Output Third Order Intercept (IP3) 33.5 35 35.5 dBm Supply Current (Idd) 89 118 89 118 89 118 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TA = +25° C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V Vdd = 3 Vdc Parameter Min. Typ. Frequency Range Max. Min. Typ. 1200 - 1700 Gain 18 15 26 Output Return Loss 14 Output Power for 1 dB Compression (P1dB) 10 0.9 15 16 Output Third Order Intercept (IP3) 28 Supply Current (Idd) 47 65 MHz 15.8 dB 0.009 dB/°C 1.2 dB 19 dB 13 11 dB 15 dBm 16 16 dBm 28 28 12 1.2 Units 17 0.9 15 13 47 65 47 LE Saturated Output Power (Psat) 12.5 0.009 1.1 Max. TE 0.8 Input Return Loss Typ. 2000 - 2200 18 0.009 Noise Figure Min. 1700 - 2000 22 Gain Variation Over Temperature Max. 65 dBm mA * Rbias resistor sets current, see application circuit herein 1700 to 2200 MHz Tune Broadband Gain & Return Loss [1] [2] 25 Gain vs. Temperature [1] B SO 24 S21 5 Vdd=5V Vdd=3V S22 -5 -15 -25 0.8 22 20 GAIN (dB) RESPONSE (dB) 15 S11 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 18 +25C +85C - 40C 16 14 12 3 1.6 1.7 1.8 O FREQUENCY (GHz) Gain vs. Temperature [2] 2.2 2.3 0 20 RETURN LOSS (dB) -5 18 GAIN (dB) 1.9 2 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature [1] 22 16 +25C +85C - 40C 14 +25C +85C - 40C -10 -15 -20 12 -25 10 1.6 Amplifiers - Low Noise - SMT 7 Electrical Specifications 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 470 Ohm 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 HMC618LP3 / 618LP3E v08.1210 1700 to 2200 MHz Tune Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 0 -10 ISOLATION (dB) -10 +25C +85C - 40C -15 -20 TE RETURN LOSS (dB) -5 +25C +85C - 40C -5 -15 -25 -30 -20 -35 -40 -25 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 Noise Figure vs Temperature [1] [2] [3] 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output P1dB vs. Temperature [1] [2] 24 1.6 Vdd=5V Vdd=3V 1.2 22 1 0.8 B SO +85C +25 C 0.6 0.2 0 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 Psat vs. Temperature [1] [2] 1.8 1.9 FREQUENCY (GHz) 2 2.1 40 38 Vdd=5V 36 IP3 (dBm) 18 Vdd=3V 16 +25C +85C -40C 34 32 +25C +85C - 40C 30 28 26 Vdd=3V 24 10 1.6 1.7 Output IP3 vs. Temperature [1] [2] 20 12 +25C +85C - 40C 1.6 Vdd=5V 14 Vdd=3V 10 24 22 16 12 2.3 O 1.6 18 14 -40C 0.4 Vdd=5V 20 P1dB (dBm) 1.4 Psat (dBm) 1.7 LE 1.6 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [2] 38 140 36 120 36 120 34 100 34 100 32 80 32 80 30 60 30 60 28 40 28 40 26 20 26 20 IP3 (dBm) 140 TE 0 24 5 2.7 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [2] 38 140 120 36 120 100 34 100 32 80 30 60 40 28 40 20 26 20 0 24 80 60 28 26 24 4.5 5 Idd (mA) IP3 (dBm) 38 5.5 0 2.7 3 O VOLTAGE SUPPLY (V) Power Compression @ 1750 MHz [1] 3.3 VOLTAGE SUPPLY (V) Power Compression @ 1750 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm), GAIN (dB), PAE (%) Idd (mA) 140 B SO 36 30 3.3 VOLTAGE SUPPLY (V) Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [1] 32 3 LE VOLTAGE SUPPLY (V) 34 0 24 5.5 IP3 (dBm) 4.5 Idd (mA) 38 Idd (mA) IP3 (dBm) Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [1] Amplifiers - Low Noise - SMT 7 1700 to 2200 MHz Tune 20 10 0 Pout Gain PAE -10 20 10 Pout Gain PAE 0 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) [1] Vdd = 5V, Rbias = 470 Ohm -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC618LP3 / 618LP3E v08.1210 1700 to 2200 MHz Tune Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2] Pout (dBm), GAIN (dB), PAE (%) 30 20 0 Pout Gain PAE -10 10 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -18 24 16 GAIN P1dB 1.2 24 1 22 0.8 0.6 0.4 Noise Figure 14 12 4.5 0.2 0 5.5 5 22 16 0.4 0.2 0 5.5 SUPPLY VOLTAGE (V) [1] Vdd = 5V, Rbias = 470 Ohm 7-5 4 1 Noise Figure 0.8 0.6 GAIN P1dB 0.4 0.2 0 3.3 3 1.2 Noise Figure 1 20 0.8 18 0.6 16 0.4 GAIN P1dB 14 12 2.7 3 0.2 0 3.3 SUPPLY VOLTAGE (V) [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com NOISE FIGURE (dB) 0.6 5 2 SUPPLY VOLTAGE (V) 1 18 12 4.5 0 1.2 14 24 0.8 GAIN P1dB -2 16 1.2 20 14 -4 Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [2] NOISE FIGURE (dB) GAIN (dB) & P1dB (dBm) Noise Figure -6 18 12 2.7 GAIN (dB) & P1dB (dBm) O Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [1] 22 -8 20 SUPPLY VOLTAGE (V) 24 -10 Gain, Power & Noise Figure vs. Supply Voltage @ 1750 MHz [2] B SO 18 -12 NOISE FIGURE (dB) 20 -14 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1750 MHz [1] 22 -16 LE INPUT POWER (dBm) GAIN (dB) & P1dB (dBm) 20 TE 10 GAIN (dB) & P1dB (dBm) Pout (dBm), GAIN (dB), PAE (%) 30 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Gain, Noise Figure vs. Rbias @ 1750 MHz Output IP3 vs. Rbias @ 1750 MHz 22 1.6 34 21 1.4 20 1.2 19 1 18 0.8 GAIN (dB) 30 Vdd=5V Vdd=3V TE 28 26 24 14 1000 10000 100 Rbias (Ohms) 38 IP3 (dBm) 30 28 26 24 100 0.2 0 10000 Gain, Noise Figure vs. Rbias @ 2100 MHz Vdd=5V Vdd=3V 1000 0.4 10000 1.2 19 1 18 0.8 17 0.6 16 0.4 Vdd=5V Vdd=3V 0.2 15 0 14 100 1000 10000 Rbias(Ohms) O Rbias (Ohms) 20 NOISE FIGURE (dB) 32 0.6 Rbias(Ohms) B SO 36 1000 LE Output IP3 vs. Rbias @ 2100 MHz 34 Vdd=5V Vdd=3V 15 22 100 17 16 GAIN (dB) IP3 (dBm) 32 NOISE FIGURE (dB) 36 Amplifiers - Low Noise - SMT 7 1700 to 2200 MHz Tune [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC618LP3 / 618LP3E v08.1210 1200 to 1700 MHz Tune Gain vs. Temperature [2] 28 26 26 24 24 22 GAIN (dB) 28 20 20 +25C +85C - 40C 18 18 16 16 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1 1.8 1.1 1.2 Input Return Loss vs. Temperature [1] +25C +85C -40C -15 -20 -25 -30 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -10 1.8 -30 -40 1.8 O Output Return Loss vs. Temperature [1] 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 Output Return Loss vs. Temperature [2] 0 0 +25C +85C -40C RETURN LOSS (dB) -5 +25 C +85 C - 40 C -20 FREQUENCY (GHz) RETURN LOSS (dB) 1.7 Input Return Loss vs. Temperature [2] B SO -10 -35 -10 -15 +25 C +85 C - 40 C -5 -10 -15 -20 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 470 Ohm 7-7 1.6 0 0 -5 -20 1.3 1.4 1.5 FREQUENCY (GHz) LE 1 -40 22 TE +25C +85C - 40C RETURN LOSS (dB) GAIN (dB) Gain vs. Temperature [1] RETURN LOSS (dB) Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Reverse Isolation vs. Temperature [2] 0 -10 -10 ISOLATION (dB) 0 -30 -40 -50 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 Noise Figure vs. Temperature [1] 1.6 1.7 1.8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 1.7 1.8 1.7 1.8 LE 1 Noise Figure vs. Temperature [2] 1.6 1.4 1.4 1.2 1 B SO NOISE FIGURE (dB) -30 -40 -50 +85C 0.8 0.6 +25 C 0.4 -40C 0.2 0 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 Output P1dB vs. Temperature [1] 1 0.8 0.6 0.4 0.2 0 1 20 20 18 18 P1dB (dBm) 22 16 +25C +85C - 40C 12 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 Output P1dB vs. Temperature [2] 22 14 +25 C +85 C - 40 C 1.2 1.8 O 1 P1dB (dBm) +25 C +85 C - 40 C -20 TE +25 C +85 C - 40 C -20 NOISE FIGURE (dB) ISOLATION (dB) Reverse Isolation vs. Temperature [1] Amplifiers - Low Noise - SMT 7 1200 to 1700 MHz Tune 16 14 12 10 +25 C +85 C - 40 C 10 8 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 470 Ohm 1.6 1.7 1.8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 [2] Vdd = 3V, Rbias = 10K Ohm For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 HMC618LP3 / 618LP3E v08.1210 1200 to 1700 MHz Tune Psat vs. Temperature [2] 22 20 20 18 18 Psat (dBm) 22 16 +25C +85C -40C 12 16 14 TE 14 12 10 +25 C +85 C - 40 C 10 8 8 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 1.8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) LE 1 Output IP3 vs. Temperature [1] 1.6 1.7 1.8 1.7 1.8 Output IP3 vs. Temperature [2] 36 36 34 32 30 28 B SO 34 +25C +85C -40C 26 24 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 +25 C +85 C - 40 C 32 IP3 (dBm) Psat (dBm) Psat vs. Temperature [1] IP3 (dBm) Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 30 28 26 24 22 1 1.8 1.1 1.2 1.3 1.4 1.5 1.6 FREQUENCY (GHz) FREQUENCY (GHz) O Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd1 = Vdd2 (V) 3V 5V Min (Ohms) 1K [3] 0 Rbias Max (Ohms) Open Circuit Open Circuit R1 (Ohms) Idd1 + Idd2 (mA) 1k 28 1.5k 34 10k 47 120 71 270 84 470 89 [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Typical Supply Current vs. Vdd Rbias = 10 KOhm for 3V Rbias = 470 Ohm for 5V Drain Bias Voltage (Vdd1, Vdd2) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 9.68 mW/°C above 85 °C) 0.63 W Thermal Resistance (channel to ground paddle) 103.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd (Vdc) Idd (mA) 2.7 35 3.0 47 3.3 58 4.5 72 TE Absolute Maximum Ratings 5.0 89 5.5 106 Note: Amplifier will operate over full voltage ranges shown above. LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS B SO Outline Drawing Amplifiers - Low Noise - SMT 7 O NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC618LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 618 XXXX 618 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10 HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 Interface Schematic N/C 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 10 GND This pin and ground paddle must be connected to RC/DC ground. 8 RES This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT 13, 15 Vdd2, Vdd1 LE TE Description No connection required. These pins may be connected to RF/DC ground without affecting performance. This pin is matched to 50 Ohms. Power Supply Voltage for the amplifier. External bypass capacitors of 1000 pF, and 0.47 µF are required. B SO Pin Number Application Circuit, 1700 to 2200 MHz Tune O Amplifiers - Low Noise - SMT Function 1, 3 - 5, 7, 9, 12, 14, 16 [1] Vdd = 5V, Rbias = 470 Ohm 7 - 11 [2] Vdd = 3V, Rbias = 10K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TE LE B SO Evaluation PCB Ordering Information Content O Item Evaluation PCB HMC618LP3E Evaluation PCB List of Materials for Evaluation PCB Part Number 117905-HMC618LP3E The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Low Noise - SMT 7 Evaluation PCB, 1700 to 2200 MHz Tune Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 µF Capacitor, Tantalum L1 15 nH, Inductor, 0603 Pkg. L3 6.8 nH, Inductor, 0603 Pkg. C6 220 pF Capacitor, 0402 Pkg. C1 10 nF Capacitor, 0402 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [2] 120586 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 12 HMC618LP3 / 618LP3E v08.1210 B SO LE TE Application Circuit, 1200 to 1700 MHz Tune O Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 - 13 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC618LP3 / 618LP3E v08.1210 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TE LE B SO Evaluation PCB Ordering Information Content O Item Evaluation PCB HMC618LP3E Evaluation PCB List of Materials for Evaluation PCB Part Number EVAL01-HMC618LP3E The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Low Noise - SMT 7 Evaluation PCB, 1200 to 1700 MHz Tune Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C1 10 nF Capacitor, 0402 Pkg. C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 µF Capacitor, 0603 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 3 pF Capacitor, 0402 Pkg. L1 27 nH, Inductor, 0603 Pkg. L2 5.6 nH, Inductor, 0603 Pkg. L3 18 nH, Inductor, 0603 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [1] 120586 Evaluation PCB [1] Circuit Board Material: Rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 14