EVAL01-HMC1090LP3E

TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC1090LP3E v02.0113 Typical Applications Features The HMC1090LP3E is ideal for: Broadband Operation with no external matching • Multiband/Multi-standard Cellular BTS Diversity High-side and Low-side LO injection Operation • GSM & 3G & LTE/WiMAX/4G • MIMO Infrastructure Receivers • Wideband Radio Receivers • Multiband Basestations & Repeaters 1 Wide IF Frequency Range High Input IP3 of +25 dBm Power Conversion Gain of 7.9 dB Input P1dB of 12 dBm SSB Noise Figure of 10 dB TE Receivers Dedicated Enable Pins for IF & LO amplifiers Single-ended RF & LO input ports Functional Diagram LE Compact Solution, 3x3 mm QFN Package General Description B SO The HMC1090LP3E is a high linearity, single channel downconverting mixer optimized for multi-standard diversity receiver applications that require low power consumption and small size. The HMC1090LP3E features new wideband limiting LO amplifiers to achieve an unprecedented RF bandwidth of 700 MHz to 3500 MHz. Unlike conventional narrow-band downconverter RFICs, the HMC1090LP3E supports both high-side and low-side LO injection over the entire RF frequency band. The RF and LO input ports are internally matched to 50Ω. O Mixers - Downconverters - SMT BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz The HMC1090LP3E integrates LO and IF amplifiers with enable functions, LO and RF baluns and high linearity passive mixer cores with bias control interface. The balanced passive mixer combined with the high-linearity IF amplifier architecture provides excellent LO-to-RF, LO-to-IF and RF-to-IF isolations. The HMC1090LP3E provides a very low noise figure of 10 dB, and high IIP3 of +25 dBm allowing the device to be used in demanding wideband applications. The HMC1090LP3E’s input IP3 can be further improved by external matching in narrow-band applications. The HMC1090LP3E exhibits less than 1.5W power consumption which can be optimized through external bias control pins. The HMC1090LP3E also features a very fast enable control interface for reduced power consumption in Time Division Duplex (TDD) applications. The HMC1090LP3E is housed in a RoHS compliant 3x3 mm leadless QFN package. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Electrical Specifications, TA = +25°C, IF Frequency = 150 MHz, LO Power = 0 dBm, Typ. Typ. Typ. Typ. Units 900 [1] 1900 [2] 2200 [2] 2700 [2] MHz Conversion Gain [8] 8.4 8.3 8.2 7.3 dB IP3 (Input) 25.8 24.6 24.2 25.1 dBm Noise Figure (SSB) 8.5 9.4 9.7 10.5 dB 1 dB Compression (Input) 10.7 12.4 12.5 13.0 dBm LO leakage @ RF port -64 -55 -55 -61 dBm 41 37 +2RF-2LO Response 68 65 +3RF-3LO Response 64 85 LO Input Drive Level -3 to +3 -3 to +3 37 38 dB 62 65 dBc 82 83 dBc -3 to +3 -3 to +3 dBm LE RF to IF Isolation TE Parameter RF Frequency DC Power Supply Specifications Parameter Conditions IF Supply Voltage (VBIAS_IF[3], VDDIF[4]) LO Supply Volltage (LOVDD) VDDIF Typ. Max. Units. +5 +5.25 V +3.15 +3.3 +3.45 V 91 mA VBIAS_IF[4] 15 mA VCS[5] 2 mA VDDIF[3] 0 mA [3] B SO IF Amplifier Supply Current when enabled Min. +4.75 IF Amplifier Supply Current when disabled VBIAS_IF LO Amplifier Supply Current when enabled 1.6 mA VCS[5] 2.7 mA LOVDD 114 mA 4.5 mA [4] LOBIAS1 + LOBIAS2 [6] LO Amplifier Supply Current when disabled [6] LOVDD 2.7 mA LOBIAS1[6] + LOBIAS2[6] 5.2 mA Mixers - Downconverters - SMT RF Input Power = -5 dBm, LOVDD = 3.3V, VCS=VBIAS_IF[3]=VDDIF = 5V O LO/IF, Enable/Disable Interface Specifications Parameter Conditions Min. Typ. Max. Units. V LOEN High Level LO Amplifier Disabled +3 +5 LOEN Low Level LO Amplifier Enabled 0 0 +1 V IFEN High Level IF Amplifier Disabled +3 +5 5 V IFEN Low Level IF Amplifier Enabled 0 0 +1 V Enable Settling Time [7] Disable Settling Time[7] 30 ns 30 ns [1] High side LO injection, VGATE = 5.0V [2] Low side LO injection, VGATE = 4.8V [3] Supply voltage for IF amplifier through choke inductor. See application circuit. [4] Supply voltage for bias circuit of IF amplifier. See application circuit. [5] Bias Control pin for IF amplifier. See application circuit. [6] Bias Control pins for LO amplifier. See application circuit. [7] Remove bypass capacitors on LOEN and IFEN pins for given settling times. See application circuit. [8] Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. VGATE[1] Input IP3 vs. VGATE[1] 4.5V 4.6V 4.8V 5.0V 29 27 8 IIP3(dBm) 6 4 25 23 21 TE CONVERSION GAIN (dB) 31 4.5V 4.6V 4.8V 5.0V 10 19 2 0 17 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 3.5 FREQUENCY (GHz) 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) B SO 40 0.7 1.9 2.3 2.7 3.1 3.5 100 80 50 1.5 +3RF -3LO Response vs. VGATE[1] 4.5V 4.6V 4.8V 5.0V 90 60 1.1 LE 100 70 0.7 FREQUENCY (GHz) +2RF -2LO Response vs. VGATE[1] +2RF-2LO RESPONSE (dBc) Mixers - Downconverters - SMT 12 90 80 70 60 4.5V 4.6V 4.8V 5.0V 50 40 3.5 0.7 1.1 1.5 FREQUENCY (GHz) 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) 15 13 NOISE FIGURE (dB) O Noise Figure vs. VGATE[1] 11 9 4.5 V 4.6 V 4.8 V 5.0 V 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) [1] VGATE is bias voltage for passive mixer cores. Refer to pin description table. Balun losses at IF output ports are de-embedded. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. High Side LO & Low Side LO @ VGATE = 4.8V Input IP3 vs. High Side LO & Low Side LO @ VGATE = 4.8V 10 27 IIP3 (dBm) 8 6 25 23 21 TE 4 19 2 0 17 0.7 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 2.7 3.1 3.5 1.1 1.5 1.9 2.3 2.7 3.1 @ RF PORT @ IF PORT -20 -40 -60 -80 0.7 3.5 1.1 1.5 FREQUENCY (GHz) 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Input IP3 vs. LO Drive @ VGATE = 4.8V O Conversion Gain vs. LO Drive @ VGATE = 4.8V 12 31 -6 dBm -3 dBm 0 dBm +3 dBm 10 -6 dBm -3 dBm 0 dBm +3dBm 29 27 8 IIP3 (dBm) CONVERSION GAIN (dB) 2.3 0 B SO 0 0.7 1.9 LO Leakage @ VGATE = 4.8V +25 C +85 C -40 C 60 20 1.5 LE 80 40 1.1 FREQUENCY (GHz) RF/IF Isolation vs. Temperature @ VGATE = 4.8V ISOLATION (dB) High Side LO@4.8V High Side LO@4.9V High Side LO@5.0V Low Side LO 29 Mixers - Downconverters - SMT 31 High Side LO@4.8V High Side LO@4.9V High Side LO@5.0V Low Side LO LEAKAGE (dBm) CONVERSION GAIN (dB) 12 6 4 25 23 21 19 2 0 17 0.7 1.1 1.5 1.9 2.3 2.7 FREQUENCY (GHz) 3.1 3.5 15 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz +2RF, -2LO Response vs. LO Drive @ VGATE = 4.8V +3RF, -3LO Response vs. LO Drive @ VGATE = 4.8V +3RF-3LO RESPONSE (dBc) 80 70 50 1.1 1.5 1.9 2.3 2.7 3.1 1.1 1.5 2.7 3.1 LE 0.7 1.2 1.8 2.3 2.9 3.4 3.5 O +25 C +85 C -40 C -15 -20 -25 -30 0.1 4 IF Output Return Loss @ VGATE = 4.8V [1] 0.7 1.2 1.8 2.3 2.9 3.4 4 FREQUENCY (GHz) Input P1dB vs. Temperature @ VGATE = 4.8V 20 0 +25 C +85 C -40 C -5 +25 C +85 C -40 C 15 P1dB (dBm) RETURN LOSS (dB) 2.3 -10 FREQUENCY (GHz) -10 -15 -20 0.1 1.9 -5 B SO -5 -30 0.1 -6 dBm -3 dBm 0 dBm +3 dBm 50 LO Input Return Loss @ VGATE = 4.8V +25 C +85 C -40 C 0 -25 60 0 5 -20 70 FREQUENCY (GHz) RF Input Return Loss @ VGATE = 4.8V [1] -15 80 40 0.7 3.5 FREQUENCY (GHz) -10 90 TE 60 RETURN LOSS (dB) +2RF-2LO RESPONSE (dBc) 100 -6 dBm -3 dBm 0 dBm +3 dBm 90 40 0.7 RETURN LOSS (dB) Mixers - Downconverters - SMT 100 10 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 FREQUENCY (GHz) 0.9 1 0 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) [1] LO input Frequency = 1500MHz, LO power = 0 dBm. 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE = 5.0V Input IP3 vs. Temperature @ VGATE = 5.0V 10 27 8 6 25 23 21 TE 4 19 2 0 0.7 17 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 40 0.7 1.1 1.5 1.9 2.3 2.3 2.7 LE 2.7 3.1 +3RF-3LO RESPONSE (dBc) B SO 80 50 1.9 3.1 3.5 100 +25 C +85 C -40 C 90 60 1.5 +3RF, -3LO Response vs. Temperature @ VGATE = 5.0V 100 70 1.1 FREQUENCY (GHz) +2RF, -2LO Response vs. Temperature @ VGATE = 5.0V +2RF-2LO RESPONSE (dBc) +25 C +85 C -40 C 29 3.5 80 70 60 50 40 0.7 1.1 1.5 FREQUENCY (GHz) 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Noise Figure vs. Temperature @ VGATE = 5.0V 17 +25 C +85 C -40 C 15 NOISE FIGURE (dB) O +25 C +85 C -40 C 90 Mixers - Downconverters - SMT 31 +25 C +85 C -40 C IIP3 (dBm) CONVERSION GAIN (dB) 12 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 6 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE = 4.8V Input IP3 vs. Temperature @ VGATE = 4.8V +25 C +85 C -40 C 29 27 8 IIP3 (dBm) 6 4 25 23 21 TE CONVERSION GAIN (dB) 31 +25 C +85 C -40 C 10 19 2 0 0.7 17 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 FREQUENCY (GHz) 40 0.7 2.3 2.7 3.1 3.5 LE B SO 80 50 1.9 100 +25 C +85 C -40 C 90 60 1.5 +3RF, -3LO Response vs. Temperature @ VGATE = 4.8V 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) 100 70 1.1 FREQUENCY (GHz) +2RF, -2LO Response vs. Temperature @ VGATE = 4.8V +2RF-2LO RESPONSE (dBc) Mixers - Downconverters - SMT 12 3.5 90 80 70 60 +25 C +85 C -40 C 50 40 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Noise Figure vs. Temperature @ VGATE = 4.8V 17 +25 C +85 C -40 C 15 NOISE FIGURE (dB) O FREQUENCY (GHz) 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Balun losses at IF output ports are de-embedded. 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE = 4.6V Input IP3 vs. Temperature @ VGATE = 4.6V 27 8 6 4 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 1.5 1.9 2.3 2.7 3.1 3.5 LE +3RF, -3LO Response vs. Temperature @ VGATE = 4.6V B SO 80 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) 100 +25 C +85 C -40 C 90 40 0.7 1.1 FREQUENCY (GHz) 100 50 21 17 +2RF, -2LO Response vs. Temperature @ VGATE = 4.6V 60 23 19 FREQUENCY (GHz) 70 25 TE +25 C +85 C -40 C 2 0 0.7 +2RF-2LO RESPONSE (dBc) +25 C +85 C -40 C 29 10 3.5 80 70 60 50 40 0.7 1.1 1.5 FREQUENCY (GHz) 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Noise Figure vs. Temperature @ VGATE = 4.6V 17 +25 C +85 C -40 C 15 NOISE FIGURE (dB) O +25 C +85 C -40 C 90 Mixers - Downconverters - SMT 31 IIP3 (dBm) CONVERSION GAIN (dB) 12 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. Temperature @ VGATE = 4.5V Input IP3 vs. Temperature @ VGATE = 4.5V +25 C +85 C -40 C 29 27 8 IIP3 (dBm) 6 4 +25 C +85 C -40 C 2 1.1 1.5 1.9 2.3 2.7 3.1 15 0.7 3.5 1.5 1.9 2.3 2.7 3.1 3.5 LE +3RF, -3LO Response vs. Temperature @ VGATE=4.5V B SO 80 1.1 1.5 1.9 2.3 2.7 3.1 +3RF-3LO RESPONSE (dBc) 100 +25 C +85 C -40 C 90 40 0.7 1.1 FREQUENCY (GHz) 100 50 21 17 +2RF, -2LO Response vs. Temperature @ VGATE=4.5V 60 23 19 FREQUENCY (GHz) 70 25 TE CONVERSION GAIN (dB) 31 10 0 0.7 +2RF-2LO RESPONSE (dBc) Mixers - Downconverters - SMT 12 3.5 80 70 60 50 40 0.7 1.1 1.5 FREQUENCY (GHz) 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Noise Figure vs. Temperature @ VGATE = 4.5V 17 +25 C +85 C -40 C 15 NOISE FIGURE (dB) O +25 C +85 C -40 C 90 13 11 9 7 5 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Balun losses at IF output ports are de-embedded. 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Conversion Gain vs. Vdd @ VGATE = 4.8V Input IP3 vs. Vdd @ VGATE = 4.8V 27 6 4 Vdd_IF=4.75V, Vdd_LO=3.15V Vdd_IF=5.25V, Vdd_LO=3.45V 1.1 1.5 1.9 2.3 2.7 23 21 19 Vdd_IF=5.00V, Vdd_LO=3.30V 2 25 TE IIP3 (dBm) 8 0 0.7 17 3.1 15 0.7 3.5 FREQUENCY (GHz) 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) 12 IIP3 vs. IF Frequency @ LO=1800 MHz, VGATE = 4.8V LE Conversion Gain vs. IF Frequency @ LO=1800 MHz, VGATE = 4.8V 31 +25 C +85 C -40 C 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 27 0.7 25 23 21 19 17 15 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) O FREQUENCY (GHz) 0.6 +25 C +85 C -40 C 29 B SO CONVERSION GAIN (dB) Vdd_IF=4.75V, Vdd_LO=3.15V Vdd_IF=5.00V, Vdd_LO=3.30V Vdd_IF=5.25V, Vdd_LO=3.45V 29 10 Mixers - Downconverters - SMT 31 IIP3 (dBm) CONVERSION GAIN(dB) 12 Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Harmonics of LO MxN Spurious @ IF Port nLO 1 2 3 4 mRF 0 1 2 3 4 0.7 -55 -48 -68 -57 0 xx -52 -24 -61 -36 1.1 -53 -50 -66 -58 1 -50 0 -43 -24 -59 1.5 -51 -49 -66 -49 2 -52 -56 -74 -54 -67 -48 -49 -60 -48 3 -85 -74 -67 -55 -75 -49 -51 -56 -53 4 -70 -38 -59 -24 -43 2.7 -55 -45 -52 -46 3.1 -51 -44 -55 -36 3.5 -47 -44 -52 -30 TE 1.9 2.3 RF Freq. = 0.9 GHz @-5 dBm LO Freq. = 0.75 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). MxN Spurious @ IF Port MxN Spurious @ IF Port nLO mRF 0 1 2 3 0 xx -49 -27 -64 1 -44 -57 -46 2 3 4 0 LE LO = 0 dBm All values in dBm measured at RF port. -58 nLO 4 mRF 0 1 2 3 4 -45 0 xx -50 -39 -56 -44 1 -43 0 -53 -47 -76 -75 -70 -76 2 -79 -69 -62 -76 -82 -102 -93 -105 3 -107 -88 -108 -97 -109 -110 -110 -110 4 -109 -107 -110 -110 -108 B SO Mixers - Downconverters - SMT nLO Spur @ RF Port LO Freq. (GHz) -68 -64 -110 -88 -108 -109 RF Freq. = 1.9 GHz @-5 dBm LO Freq. = 1.75 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). RF Freq. = 2.5 GHz @-5 dBm LO Freq. = 2.35 GHz @ 0 dBm All values in dBc below IF power level (1RF - 1LO). O Typical Supply Current vs. Vdd VDDIF (V) Idd_IF (mA) LOVDD (V) Idd_LO (mA) 113 4.75 110 3.15 5.00 112 3.30 114 5.25 112 3.45 115 Truth Table IFEN (V) 11 IFAMP LOEN (V) LO_STAGES Low ON Low ON High OFF High OFF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Recommended Operating Conditions +20 dBm Parameter LO Input Power (VDDIF= +5V, LOVDD=3.3V) +20 dBm Junction Temperature VDDIF, LOVDD 6V Ambient Temperature VGATE 5.5V Max. Channel Temperature 175°C Continuous Pdiss (T = 85°C) (derate 41.8 mW/°C above 85°C) 2.72 W Thermal Resistance (channel to ground paddle) 23.9 °C/W -65 to 150°C -40 to +85 °C ESD Sensitivity (HBM) Class 1B Typ. Max. 150 -40 85 Units °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LE Storage Temperature Operating Temperature Min. TE RF Input Power (VDDIF= +5V, LOVDD=3.3V) B SO Outline Drawing Mixers - Downconverters - SMT Absolute Maximum Ratings O NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, WHITE INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 7. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 8. PACKAGE WARP SHALL NOT EXCEED 0.05mm 9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 10. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC1090LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking H1090 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 12 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Function Description 1 RF RF input pin of the mixer, internally matched to 50 Ohms. The RF input pin requires off-chip DC blocking capacitors. See application circuit. 2,9,10 N/C Not connected internally. 3 GND This pin and the package base must be connected to RF and DC ground. 4 LOVDD 3.3V bias supply for LO Drive stages. Refer to application circuit for appropriate filtering. 5 LO_BIAS2 Bias control pin for LO Amplifier. Connect to 5V supply through 390 Ohms resistor. Refer to application section for proper values of resistors to adjust LO amplifier current. 6 13 LE LO_BIAS1 Bias control pin for LO Amplifier. Connect to 5V supply through 270 Ohms resistor. Refer to application section for proper values of resistors to adjust LO amplifier current. LOEN Enable for LO Amplifier. When connected to LOW or left unconnected, amplifiers are enabled. For disable mode connect to HIGH. O 7 Interface Schematic TE Pin Number B SO Mixers - Downconverters - SMT Pin Descriptions 8 LO LO input of the mixer. Internally matched to 50 Ohms. Requires off-chip DC blocking capacitor. See application circuit. 11 IFEN Enable for IF Amplifier. When connected to LOW or left unconnected, amplifier is enabled. For disable mode connect to HIGH. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Pin Descriptions (continued) Description Interface Schematic 12 VCS Bias control pin for IF amplifier. Connect to 5V supply through 240 Ohms resistor. Refer to application section for proper values of resistors to adjust IF amplifier current. 13,14 IFP, IFN Differential IF outputs.Connect to 5V supply through choke inductors. See application circuit. 15 VDDIF Supply voltage pin for IF amplifier’s bias circuits. Connect to 5V supply through filtering. LE B SO VGATE Bias pins for mixer cores. Set from 4.4V to 5.0V for operating frequency band. O 16 Mixers - Downconverters - SMT Function TE Pin Number For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 14 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz B SO LE TE Mixers - Downconverters - SMT Evaluation PCB List of Materials for EVAL01- HMC1090LP3E [1] O Item Description J1 - J3 PCB Mount SMA Connector TP1-TP10 Test Point L1-L2 680 nH Inductor, 0603 Pkg. C26-28, C33 0.01 µF Capacitor, 0603 Pkg C7,C10,C13,C16,C22,C25,C29,C36,C39 4.7 µF CaSE A, Tantalum C4,C8,C11,C14,C20,C23,C34,C37 100 pF Capacitor, 0402 Pkg. C2,C5,C9,C12,C15,C19,C21,C24,C30,C35,C38 1 nF Capacitor, 0402 Pkg. C6 10 nF Capacitor, 0402 Pkg. R4-R6,R9-R13 0 ohm Resistor, 0402 Pkg. R1 270 ohm Resistor, 0402 Pkg. R3 390 ohm Resistor, 0402 Pkg. R7 240 Ohm Resistor, 0402 Pkg. T1 1:4 Transformer - ETC4-1T-7TR. The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB 15 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Mixers - Downconverters - SMT B SO LE TE Application Circuit - Broadband O Notes: 1-Differential IF output transmission lines should be symmetrical 2-Refer to evaluation PCB for component placements and distances For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 16 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz The HMC1090LP3E is a broadband single channel, high dynamic range, high gain, low noise, high-linearity downconverting mixer designed for RF frequencies from 700 MHz to 3.5 GHz. The HMC1090LP3E’s low noise and high linearity performance makes it suitable for a wide range of transmission standards, including TDD, FDD, LTE, CDMA, GSM, MC-GSM, W-CDMA, UMTS, TD-SCDMA and WiMAX applications. TE The HMC1090LP3E offers an easy-to-use and complete frequency conversion solution for broadband receiver applications in a highly compact 3x3 mm QFN package. The HMC1090LP3E greatly simplifies the design of receiver applications by increasing the integration level and reducing the number of required circuit elements thereby reducing cost, area, and power consumption. Principle of Operation LE The HMC1090LP3E incorporates a double-balanced passive mixer which is driven from a single-ended LO input that is broadband matched to 50 Ω and requires only a standard DC-blocking capacitor. The single-ended LO input is converted into differential through the on-chip balun and followed by a LO driver stage. The HMC1090LP3E’s single-ended RF input is converted into differential through the on-chip balun. The singleended RF input is internally broadband matched to 50 Ω and requires only a DC-blocking capacitor. Moreover, the HMC1090LP3E’s RF input can be externally matched for narrow band applications with a simple matching network, including a series inductor and a shunt capacitor, to further improve the performance. Please refer to the application circuit for narrowband RF input matching for more information. The HMC1090LP3E’s IF amplifier is designed for differential 200 Ω output impedance. As recommended in the application circuit a few external components are required at these IF outputs to acheive a broadband frequency response. Please refer to the IF output interface section for more information. The HMC1090LP3E requires 5V and 3.3V supply voltages and external bias voltages. Bias voltages generate reference currents for the IF and LO amplifiers. The 3.3V supply and the external bias voltages can be generated from the 5V supply in order to operate with a single supply. Please refer to the single supply operation section for more information. B SO Mixers - Downconverters - SMT Application Information The reference currents to the LO amplifiers and IF amplifiers can be disabled through LOEN and IFEN pins respectively. If the EN pin is connected to LOW or left unconnected, the part operates normally. If the EN pin is connected to HIGH, the LO amplifiers and IF amplifiers are disabled. Single Supply Operation O The HMC1090LP3E requires 5V and 3.3V supply voltages and external bias voltages. External bias voltages except VGATE pin voltage are already generated from 5V supply voltage on the evaluation board (see application circuit). These bias voltages can be optimized by series resistors with appropriate values from the 5V supply to the bias pins (VCS, LOBIAS1, LOBIAS2). The resistor values on VCS, LOBIAS1 and LOBIAS2 traces on the evaluation board are 240 Ohms, 270 Ohms and 390 Ohms respectively. Refer to the VCS Interface and LOBIAS Interface section for more information. The nominal VGATE pin voltage is 4.8V, which is applied externally. However, the VGATE pin voltage can be tuned from 4.4V to 5V for optimization of Input IP3 and conversion gain performance. Once optimized, the VGATE pin voltage can be generated from the 5V supply by changing the value of series resistor R13. Please refer to the VGATE interface section for more information. 17 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 LE TE The 3.3V supply for the LO amplifiers can be generated from the 5V supply by adding a 15 Ohm resistor between LOVDD pin and the 5V supply. Rvdd_lo can be added in series with the LOVDD test point as shown in Figure 1. The resistor must have a power rating of 1/2W or more. B SO Figure 1. Interface to generate 3.3V for LOVDD pin from the 5V Supply. VGATE Interface 18 30 15 25 12 20 INPUT IP3 9 6 15 10 CORVERSION GAIN 4.5V 4.6V 4.8V 5.0V 3 5 0 0.7 IIP3 (dBm) CONVERSION GAIN (dB) O The VGATE pin is a bias pin for the mixer core. The nominal VGATE pin voltage is 4.8V and is applied externally. This voltage can be tuned from 4.4V to 5V for optimizing input IP3 and conversion gain performance for the desired frequency band. Higher IIP3 values can be obtained by increasing the VGATE pin voltage but this will reduce the conversion gain. Figure-2 shows the measured conversion gain and IIP3 for different values of VGATE. Mixers - Downconverters - SMT BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz 0 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Figure-2. Conversion Gain & IIP3 vs. RF Frequency over VGATE Pin Voltage @25C, IF =150 MHz [1] [1] Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 18 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Table-1: Resistor values for different VGATE pin voltages R13 (Ohm) 4.4 330 TE VGATE (V) 4.5 281 4.6 219 4.7 163 4.8 106 4.9 47 0 LE 5.0 VCS Interface and LOBIAS Interface The VCS pin is the bias pin for the IF amplifier, which sets the reference current to the IF amplifier. The VCS voltage is generated from the 5V supply by a series resistance. Higher IIP3 values can be obtained by reducing the values of this series resistance R7, which will increase the total supply current of the IF amplifiers. Figure-3a shows the measured conversion gain and IIP3 vs. total supply current from the VBIASIF and VDDIF test points at 1900 MHz. B SO LOBIAS1 and LOBIAS2 pins are bias pins for LO amplifiers and set the reference currents to these LO amplifiers. The LOBIAS voltage is generated from the 5V supply by series resistances R3 and R1. Figure-3b shows the measured conversion gain and IIP3 vs. total supply current from the VDDLO test point at 1900MHz. 12 INPUT IP3 9 18 30 25 15 25 20 15 6 10 CONVERSION GAIN 3 NOMINAL BAIS CONDITION 0 5 0 95 100 105 110 115 120 125 130 IF SUPPLY CURRENT (mA) Figure 3a. IIP3 and conversion gain vs. IF stage’s Total supply current @ 25° C, RF = 1900 MHz, IF = 150 MHz , VGATE = 4.8V [1] 12 INPUT IP3 9 6 15 10 CONVERSION GAIN NOMINAL BIAS CONDITION 3 0 104 20 IIP3 (dBm) 15 30 CONVERSION GAIN (dB) CONVERSION GAIN (dB) O 18 IIP3 (dBm) Mixers - Downconverters - SMT Table-1 shows the typical resistor values to be added in series with VGATE pin to acheive different VGATE voltages. 5 0 109 114 119 124 LO SUPPLY CURRENT (mA) Figure 3b. IIP3 and conversion gain vs. LO stage’s Total supply current @ 25° C, RF = 1900 MHz, IF = 150 MHz , VGATE = 4.8V [1] [1] Balun losses at IF output ports are de-embedded. 19 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 Table-2 and Table-3 show the typical resistor values that are used in series with VCS, and LOBIAS2 pins for different total supply current values of IF and LO stages. A fine tune for these resistors can be performed if a better fit is required. IF Amplifiers Total Supply Current (mA) 95 TE Table-2: Resistor Values for Total Supply Current of IF Amplifier R7 (Ohm) 510 112 240 50 LE 130 Table-3: Resistor Values for Total Supply Current of LO Amplifier R3 (Ohm) 104 1.1K 114 390 124 0 B SO LO Amplifier Total Supply Current (mA) External RF Matching The HMC1090LP3E’s RF input is internally broadband matched to 50Ω. The RF input can be externally matched for a specific RF frequency band of interest to further improve Input IP3 (IIP3). Matching the RF input to a specific RF frequency band can be easily accomplished by adding a series inductor and a shunt capacitor. See Table-4 for values of the external matching components for corresponding RF frequency bands. Figure-4 shows the application circuit with the external components on the RF input pin. Mixers - Downconverters - SMT BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz O LOBIAS2 and VGATE pin voltages can be optimized for a specific RF frequency band by changing the resistor values in series with these pins. Table-1 shows the resistor value (R13) for corresponding VGATE pin voltages. Table-3 shows the resistor value (R3) for recommended LOBIAS2 pin voltages. Figure-5 shows the measured conversion gain and IIP3 for 900 MHz,1900 MHz and 2500 MHz RF frequency bands. Table-4: Components for Selected Frequency Bands Tune Option Rmatch Cmatch1, Cmatch2 Lmatch R13 Recommended VGATE Voltages 900 MHz 30 Ohm Open Open 0 Ohm 47 Ohm 4.9V 1900 MHz 0 Ohm 1 pF Open 5.1 nH 163 Ohm 4.7V 2500MHz 0 Ohm 1 pF Open 3.3 nH 106 Ohm 4.8V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 20 HMC1090LP3E v02.0113 B SO LE TE Mixers - Downconverters - SMT BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz Figure-4. Application Circuit for Narrowband RF Input Matching 35 25 15 30 20 INPUT IP3 9 15 6 10 CONVERSION GAIN +25C +85C -40C 3 5 0 0 700 800 900 1000 1100 FREQUENCY (GHz) Figure-5a. IIP3 and Conversion Gain with matching for 900 MHz band. Low side LO injection, VGATE = 5.0 V, IF = 100 MHz [1] 12 25 INPUT IP3 9 20 6 3 15 +25C +85C -40C CONVERSION GAIN 10 0 1700 IIP3 (dBm) 12 18 CONVERSION GAIN (dB) 15 30 IIP3 (dBm) CONVERSION GAIN (dB) O 18 5 1800 1900 2000 2100 2200 FREQUENCY (GHz) Figure-5b. IIP3 and Conversion Gain with matching for 1900 MHz band, VGATE= 4.7 V, IF= 100 MHz [1] [1] Balun losses at IF output ports are de-embedded. 21 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz 35 INPUT IP3 12 25 9 20 6 3 15 +25C +85C -40C CONVERSION GAIN 10 0 5 2300 2400 2500 2600 2700 FREQUENCY (GHz) Figure-5c. IIP3 and Conversion Gain with matching for 2500 MHz band VGATE = 4.8 V, IF = 100 MHz [1] 31 29 25 23 High Side LO@4.8V High Side LO@4.9V High Side LO@5.0V Low Side LO B SO IIP3 (dBm) 27 LE It is recommended to use high side LO injection for RF frequencies below 1 GHz for better IIP3. For instance, higher IIP3 can be obtained if LO input is driven with high side at RF=900 MHz. Please refer to Figure-6. 21 19 17 15 0.7 1.1 1.5 1.9 2.3 2.7 3.1 3.5 FREQUENCY (GHz) Mixers - Downconverters - SMT 30 IIP3 (dBm) 15 TE CONVERSION GAIN (dB) 18 Figure-6. Input IP3 vs. High Side LO & Low Side LO @ VGATE =4.8V Input IP3 Dependence on RF Input Power O The HMC1090LP3E accepts a wide range of RF input power. Figure-7 shows the IIP3 vs. RF input power for 1900 MHz RF and 150 MHz IF. 31 1900MHz 29 IIP3(dBm) 27 25 23 21 19 17 15 -10 -8 -6 -4 -2 0 RF POWER (dBm) Figure-7. IIP3 vs. RF Input Power, RF = 1900 MHz, IF = 150 MHz, VGATE = 4.8V [1] Balun losses at IF output ports are de-embedded. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 22 HMC1090LP3E v02.0113 BROADBAND HIGH IP3 DOWNCONVERTER 0.7 - 3.5 GHz The HMC1090LP3E’s differential IF output pins are biased at 5V through choke inductors as shown in the application circuit. The default value of these choke inductors is 820 nH. Figure-8 shows the measured conversion gain vs. IF frequency where the 1dB IF bandwidth is approximately 450 MHz and the 3 dB IF bandwidth is above 700 MHz. Higher IF bandwidth values can be obtained by reducing the value of the choke inductors. TE Baluns at the IF outputs are used to convert the 200 Ohms differential output impedance of HMC1090LP3E to 50 Ohms single-ended for characterization. LE 10 8 6 4 B SO CONVERSION GAIN (dB) 12 2 CG 0 0 100 200 300 400 500 600 700 FREQUENCY (GHz) Figure-8. Conversion gain vs. IF Frequency @ LO=1.5 GHz [1] O Mixers - Downconverters - SMT IF Output Interface [1] Balun losses at IF output ports are de-embedded. 23 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com