FEATURES
FUNCTIONAL BLOCK DIAGRAM
Ultrahigh detectivity photodetector
90 fA/√Hz (typical) ultralow noise floor
Signal-to-noise ratio (SNR) near shot noise limit
137 µA (typical) of supply current when active
(EE = 0 µW/cm2)
1 µA (typical) of supply current in standby
High speed, deep junction photodiode
Nominal linear output current: 240 µA (typical)
Flexible output configuration
Excellent pulse response
High ambient light rejection
Space-saving, 3 mm × 3 mm LFCSP package
VCC
+
CURRENT
AMPLIFIER
OUT
–
ADPD2211
PWDN GND
13720-001
Data Sheet
Low Noise, High Sensitivity Optical Sensor
ADPD2211
Figure 1.
APPLICATIONS
Heart rate, pulse oximetry monitoring
(photoplethysmography)
Battery-powered medical sensors
Chemical analysis
GENERAL DESCRIPTION
The ADPD2211 is an optical sensor optimized for biomedical
applications. Very low power consumption and near theoretical
signal-to-noise ratio (SNR) are achieved by packaging an ultralow
capacitance deep junction silicon photodiode operated in zero
bias photoconductive mode with a low noise current amplifier.
The ADPD2211 offers a typical 400 kHz bandwidth performance,
which is well suited for use with pulsed excitation. The ADPD2211
uses very little power during operation and incorporates a
power-down pin, enabling power cycling to optimize battery
Rev. 0
life in portable applications. The ADPD2211 provides shot
noise limited performance, making it an excellent choice for
measuring signals with the highest possible fidelity in low light
conditions. This combination of low power, very high SNR, and
electromagnetic interference (EMI) immunity enables low power
system solutions not possible with traditional photodiode (PD)
and transimpedance amplifier (TIA) systems.
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
ADPD2211
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Shot Noise Limited Performance ................................................9
Applications ....................................................................................... 1
Sensitivity and SNR .......................................................................9
Functional Block Diagram .............................................................. 1
Linearity..........................................................................................9
General Description ......................................................................... 1
Package Considerations ................................................................9
Revision History ............................................................................... 2
EPAD Connection .........................................................................9
Specifications..................................................................................... 3
Applications Information .............................................................. 10
Absolute Maximum Ratings............................................................ 4
Powering the Device .................................................................. 10
Thermal Resistance ...................................................................... 4
Power-Down Mode .................................................................... 10
Soldering Profile ........................................................................... 4
Pulse Mode Operation ............................................................... 10
ESD Caution .................................................................................. 4
Output Configuration ................................................................ 10
Pin Configuration and Function Descriptions ............................. 5
3-Wire Cable Voltage Configuration ....................................... 10
Typical Performance Characteristics ............................................. 6
3-Wire Current Mode Configuration ...................................... 10
Terminology ...................................................................................... 8
Evaluation Board Schematic and Layout .................................... 12
Theory of Operation ........................................................................ 9
Outline Dimensions ....................................................................... 13
Overview........................................................................................ 9
Ordering Guide .......................................................................... 13
REVISION HISTORY
4/16—Revision 0: Initial Version
Rev. 0 | Page 2 of 13
Data Sheet
ADPD2211
SPECIFICATIONS
VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is
irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance.
Table 1.
Parameter
GAIN
Gain (Current Amplifier)
DYNAMIC PERFORMANCE
Frequency Response Peaking
Rise Time
Fall Time
Bandwidth
OPTICAL PERFORMANCE
Diode Active Area
Saturation Irradiance
NOISE PERFORMANCE
Current Noise, Output Referred1
Current Noise Floor, Input Referred
Noise Equivalent Power
EE Required for SNR = 10000:1
POWER AND SUPPLY
Supply Voltage
Power Supply Rejection Ratio
Current
Standby
Supply at EE = 0 µW/cm2
Supply2
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred
Output Referred
Maximum Output Voltage
Nominal Linear Output Current
Linearity into TIA
Linearity into Resistive Load
Peak Output Current3
Output Capacitance
Output Resistance
POWER-DOWN LOGIC
Input Voltage
High Level
Low Level
Leakage Current
High
Low
OPERATING AMBIENT TEMPERATURE RANGE
1
2
3
Symbol
Test Conditions/Comments
Min
βTLA
tR
tF
BW
NEP
VCC
PSRR
ISTANDBY
IFLOOR
ISUPPLY
10% to 90% full scale (FS) (IOUT = 24 µA)
90% to 10% FS (IOUT =24 µA)
IPD = 10 nA, IMOD = 1 nA
EE = 0 µW/cm2
IPD = 10 nA to 300 nA
IPD > 300 nA
EE = 0 µW/cm2, at 1 kHz
At 1 kHz
At 1 kHz
1.8
VCC = 1.8 V to 5.0 V, EE = 2200 µW/cm2
PWDN > VIH
IOUT = 10 µA
IOUT = 240 µA
VOUT_MAX
IOUT_FS
VBIAS = 1.3 V, RFEEDBACK = 25 kΩ
IOUT < 100 µA , RLOAD = 5 kΩ
From OUT to GND
From OUT to GND
VIH
VIL
IIH
IIL
Max
Unit
24
EE = 0 µW/cm2
EE = 0 µW/cm2
COUT
ROUT
Typ
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