HMC-ALH102-SX

HMC-ALH102 v03.0118 LOW NOISE AMPLIFIERS - CHIP GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features This HMC-ALH102 is ideal for: Noise Figure: 2.5 dB • Wideband Communications Receivers Gain: 11.6 dB @ 10 GHz • Surveillance Systems P1dB Output Power: +10 dBm • Point-to-Point Radios Supply Voltage: +2V @ 55 mA • Point-to-Multi-Point Radios Die Size: 3.0 x 1.435 x 0.1 mm • Military & Space • Test Instrumentation General Description Functional Diagram The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMCALH102 amplifier is ideal for integration into MultiChip-Modules (MCMs) due to its small size. Electrical Specifications, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2] Parameter Min. Frequency Range Gain Max. Units GHz 10 dB Input Return Loss 15 dB Output Return Loss 12 dB 10 dBm Output Power for 1 dB Compression 8 Typ. 2 - 20 8 Noise Figure 2.5 dB Supply Current (Idd) 55 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC-ALH102 v03.0118 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Noise Figure vs. Frequency Linear Gain vs. Frequency 5 4 NOISE FIGURE (dB) GAIN (dB) 12 8 4 3 2 1 0 0 2 6 10 14 18 22 2 6 FREQUENCY (GHz) Input Return Loss vs. Frequency 14 18 22 Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 10 FREQUENCY (GHz) -10 -15 -20 -10 -15 LOW NOISE AMPLIFIERS - CHIP 16 -20 -25 -25 2 6 10 14 FREQUENCY (GHz) 18 22 2 6 10 14 18 22 FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC-ALH102 v03.0118 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage +3.7 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 5 dBm Channel Temperature 180 °C Continuous Pdiss (T = 85 °C) (derate 9.87 mW/°C above 85 °C) 0.94 W Thermal Resistance (channel to die bottom) 101.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC-ALH102 v03.0118 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Descriptions Function Pad Description 1 RFIN This pas is AC coupled and matched to 50 Ohms. 2 Vdd Power Supply Voltage for the amplifier. See Assembly Diagram for required external components. 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D LOW NOISE AMPLIFIERS - CHIP Pad Number 4 HMC-ALH102 v03.0118 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab LOW NOISE AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible