HMC-ALH311
v02.0209
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Typical Applications
Features
This HMC-ALH311 is ideal for:
P1dB Output Power: +12 dBm
• Point-to-Point Radios
Gain: 25 dB
• Point-to-Multi-Point Radios
Noise Figure: 3 dB @ 25 GHz
• Military & Space
Supply Voltage: +2.5V @ 52 mA
• Test Instrumentation
Die Size: 1.80 x 0.73 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH311 is a GaAs MMIC HEMT Low Noise
Driver Amplifier die which operates between 22 and
26.5 GHz. The amplifier provides 25 dB of gain, a
typical noise figure of 3 dB at 25 GHz, and +12 dBm of
output power at 1 dB gain compression while requiring
only 52 mA from a +2.5V supply voltage. The HMCALH311 is ideal for microwave radio driver amplifier
applications between 22 to 26.5 GHz. Due to its small
size, the HMC-ALH311 die is ideal for integration into
Multi-Chip-Modules (MCMs).
Electrical Specifi cations*, TA = +25° C, Vdd = 2.5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
22 - 24
22
Min.
Typ.
Max.
24 - 26.5
Units
GHz
25
dB
Gain Variation over Temperature
0.03
dB / °C
Noise Figure
3.5
Input Return Loss
10
15
Output Return Loss
12
15
dB
Output Power for 1 dB Compression
12
12
dBm
Supply Current (Vdd = 2.5V, Vgg1 = -0.3V Typ.)
52
52
mA
4.5
3
3.5
dB
dB
*Unless otherwise indicated, all measurements are from probed die
1 - 144
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-ALH311
v02.0209
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
4
NOISE FIGURE (dB)
GAIN (dB)
25
20
15
10
3
2
1
5
0
0
21
22
23
24
25
26
27
21
28
22
23
24
25
26
27
28
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
-5
-5
RETURN LOSS (dB)
0
-10
-15
-20
-25
-10
-15
LOW NOISE AMPLIFIERS - CHIP
5
30
RETURN LOSS (dB)
1
Noise Figure vs. Frequency
Linear Gain vs. Frequency
-20
-25
-30
-30
21
22
23
24
25
26
27
28
FREQUENCY (GHz)
21
22
23
24
25
26
27
28
FREQUENCY (GHz)
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
1 - 145
HMC-ALH311
v02.0209
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage
+5 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
RF Input Power
-7 dBm
Channel Temperature
180 °C
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
Standard
Alternate
GP-5 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 146
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-ALH311
v02.0209
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
3
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
4
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
LOW NOISE AMPLIFIERS - CHIP
1
Pad Descriptions
1 - 147
HMC-ALH311
v02.0209
Assembly Diagram
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of
