HMC-ALH435

HMC-ALH435 v03.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Features Typical Applications This HMC-ALH435 is ideal for: Noise Figure: 2.2 dB @ 12 GHz • Wideband Communication Systems Gain: 13 dB @ 14 GHz • Surveillance Systems P1dB Output Power: +16 dBm @ 12 GHz • Point-to-Point Radios Supply Voltage: +5V @ 30 mA • Point-to-Multi-Point Radios Die Size: 1.48 x 0.9 x 0.1 mm • Military & Space • Test Instrumentation • VSAT General Description Functional Diagram The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz. The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage. The HMC-ALH435 amplifier is ideal for integration into Multi-ChipModules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= +5V Parameter Min. Frequency Range Gain Typ. Max. 5 - 20 10 Units GHz 13 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure 2.2 2.6 dB Input Return Loss 5 dB Output Return Loss 10 dB Output IP3 25 dBm Output Power for 1 dB Compression 16 dBm Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) 30 mA *Unless otherwise indicated, all measurements are from probed die 1 - 180 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz GAIN (dB) 12 8 4 0 3 2 1 0 2 6 10 14 18 22 26 30 4 6 8 10 FREQUENCY (GHz) 12 14 16 18 20 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 -2 -4 RETURN LOSS (dB) 0 -4 -6 -8 -8 -12 LOW NOISE AMPLIFIERS - CHIP 4 OUTPUT RETURN LOSS (dB) 16 RETURN LOSS (dB) 1 Noise Figure vs. Frequency Linear Gain vs. Frequency -16 -10 -20 2 6 10 14 18 22 26 30 2 FREQUENCY (GHz) 6 10 14 18 22 26 30 FREQUENCY (GHz) P1dB vs. Frequency For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 1 - 181 HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power 15 dBm Channel Temperature 180 °C Continuous Power Pdiss (T = 85 °C) derate 4.7 mW/ °C above 85 °C 0.45 W Thermal Resistance (channel to die bottom) 213.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 182 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vgg1 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 3 Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 183 HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Assembly Diagram LOW NOISE AMPLIFIERS - CHIP 1 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of