HMC-ALH476-SX

HMC-ALH476 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Typical Applications Features This HMC-ALH476 is ideal for: Noise Figure: < 2 dB @ 20 GHz • Point-to-Point Radios Gain: 20 dB • Point-to-Multi-Point Radios P1dB Output Power: +14 dBm • Military & Space Supply Voltage: +4V @ 90 mA • Test Instrumentation Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description The HMC-ALH476 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 14 and 27 GHz. The amplifier provides 20 dB of gain, 2 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH476 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= +4V Parameter Min. Frequency Range Gain Typ. Max. Min. 14 - 18 18 Typ. Max. 18 - 27 20 18 Units GHz 20 dB 0.02 dB / °C Gain Variation over Temperature 0.02 Noise Figure 2.5 Input Return Loss 16 17 Output Return Loss 18 20 dB Output Power for 1 dB Compression 14 14 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.3V Typ.) 90 90 mA 3 2 2.6 dB dB *Unless otherwise indicated, all measurements are from probed die 1 - 198 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz 20 4 15 10 3 2 1 0 0 13 15 17 19 21 23 25 27 13 15 17 FREQUENCY (GHz) 19 21 23 25 27 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 -20 -25 -30 -10 -15 -20 LOW NOISE AMPLIFIERS - CHIP 5 NOISE FIGURE (dB) GAIN (dB) 25 5 RETURN LOSS (dB) 1 Noise Figure vs. Frequency Linear Gain vs. Frequency -25 -30 -35 -35 13 15 17 19 21 23 25 27 FREQUENCY (GHz) 13 15 17 19 21 23 25 27 FREQUENCY (GHz) For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 1 - 199 HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz LOW NOISE AMPLIFIERS - CHIP 1 Absolute Maximum Ratings Drain Bias Voltage +4.5V RF Input Power -2 dBm Gate Bias Voltage -1 to 0.3V Thermal Resistance (Channel to die bottom) 44.6 °C/W Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 200 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 6 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 3, 5 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. LOW NOISE AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 201 HMC-ALH476 v02.0209 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Assembly Diagram LOW NOISE AMPLIFIERS - CHIP 1 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of