HMC-APH196
v02.0209
LINEAR & POWER AMPLIFIERS - CHIP
3
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Typical Applications
Features
This HMC-APH196 is ideal for:
Output IP3: +31 dBm
• Point-to-Point Radios
P1dB: +22 dBm
• Point-to-Multi-Point Radios
Gain: 20 dB @ 20 GHz
• VSAT
Supply Voltage: +4.5V
• Military & Space
50 Ohm Matched Input/Output
Die Size: 3.3 x 1.95 x 0.1 mm
Functional Diagram
General Description
The HMC-APH196 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 17 and 30 GHz. The HMC-APH196
provides 20 dB of gain at 20 GHz, and an output
power of +22 dBm at 1 dB compression from a +4.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-APH196
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data Shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA [2]
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
17 - 24
15
20
Typ
Max
Min
24 - 27
14
17
11
Typ
Max
Units
27 - 30
GHz
16
dB
Input Return Loss
17
17
17
dB
Output Return Loss
25
23
23
dB
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Supply Current (Idd1 + Idd2)
20
22
22
dBm
31
20
22
31
20
31
dBm
400
400
400
dBm
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd total = 400 mA
3 - 160
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Pulsed P1dB vs. Frequency
25
26
20
24
15
10
5
3
22
20
18
0
16
15
20
25
30
15
FREQUENCY (GHz)
25
30
FREQUENCY (GHz)
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
20
-10
-15
-20
-25
-10
-15
-20
-25
-30
-30
15
20
25
30
FREQUENCY (GHz)
15
20
25
30
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - CHIP
POUT (dBm)
GAIN (dB)
Pulsed Gain vs. Frequency
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4.5 V, Idd1 + Idd2 = 400 mA
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
3 - 161
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Absolute Maximum Ratings
LINEAR & POWER AMPLIFIERS - CHIP
3
Drain Bias Voltage
6 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
RF Input Power
10 dBm
Thermal Resistance
(Channel to die bottom)
35.7 °C/W
Channel Temperature
180 °C
Storage Temperature
-65 °C to +150 °C
Operating Temperature
-55 °C to +85 °C
Drain Bias Current (stage 1)
176 mA
Drain Bias Current (stage 2)
440 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 162
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2, 4
Vgg1, Vgg2
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
3, 5
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
6
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Number
3 - 163
HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 164
Note 1: Bypass caps should be 100 pF ceramic (single-layer) placed no further than 30 mils from the amplifier
Note 2: Best performance obtained from use of
