HMC-APH596-SX

HMC-APH596 v02.0208 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Typical Applications Features This HMC-APH596 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output Die Size: 2.55 x 1.87 x 0.1 mm General Description Functional Diagram The HMC-APH596 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 16 and 33 GHz. The HMC-APH596 provides 17 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH596 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA [2] Parameter Min. Frequency Range Gain 16 Typ. Max. Units 16 - 33 GHz 17 dB Input Return Loss 17 dB Output Return Loss 18 dB Output power for 1dB Compression (P1dB) 24 dBm Output Third Order Intercept (IP3) 33 dBm Supply Current (Idd1+Idd2) 400 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Iddtotal = 400 mA 3 - 208 For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Fixtured Pout vs. Frequency Gain vs. Frequency 24 36 22 32 18 16 14 3 P1dB P3dB IP3 @ 18dBm/tone 28 24 12 10 20 12 16 20 24 28 32 36 16 20 FREQUENCY (GHz) Input Return Loss vs. Frequency 28 32 36 Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 24 FREQUENCY (GHz) -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 -35 12 16 20 24 28 32 36 FREQUENCY (GHz) 12 16 20 24 28 32 36 FREQUENCY (GHz) For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. LINEAR & POWER AMPLIFIERS - CHIP POUT (dBm) GAIN (dB) 20 3 - 209 HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - CHIP 3 Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input 6 dBm Thermal Resistance (Channel to die bottom) 56.6 °C/W Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C Drain Bias Current (Idd1) 180 mA Drain Bias Current (Idd2) 290 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 210 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone:Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vdd1 Power Supply Voltage for the amplifier. See assembly for required external components. 3 Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 6 Vgg1 Gate control for the amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to placeCorporation: orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 211 HMC-APH596 v02.0208 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 212 Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of