HMC-APH608
v03.0409
LINEAR & POWER AMPLIFIERS - CHIP
3
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Typical Applications
Features
This HMC-APH608 is ideal for:
Output IP3: +40 dBm
• Point-to-Point Radios
P1dB: +30 dBm
• Point-to-Multi-Point Radios
Gain: 17 dB
• VSAT
Supply Voltage: +5V
• Military & Space
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
General Description
Functional Diagram
The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Amplifier which
operates between 22.5 and 26.5 GHz. The HMCAPH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifi cations[1], TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA [2]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
22.5 - 26.5
14.5
17
16
Typ.
Max.
Units
24 - 26.5
GHz
17
dB
Input Return Loss
8
11
dB
Output Return Loss
9
12
dB
Output power for 1dB Compression (P1dB)
27
30
28
30
dBm
Output Third Order Intercept (IP3)
36
39
37
40
dBm
950
mA
Supply Current (Idd1+Idd2)
950
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
3 - 214
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Fixtured Pout vs. Frequency
Linear Gain vs. Frequency
20
42
40
16
14
3
38
P1dB
IP3 @ 18 dBm/Tone
36
34
32
12
30
10
28
22
23
24
25
26
27
22
23
FREQUENCY (GHz)
Input Return Loss vs. Frequency
25
26
27
Output Return Loss vs. Frequency
0
0
-4
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
24
FREQUENCY (GHz)
-8
-12
-16
-8
-12
-16
-20
-20
22
23
24
25
26
27
FREQUENCY (GHz)
22
23
24
25
26
27
FREQUENCY (GHz)
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
LINEAR & POWER AMPLIFIERS - CHIP
POUT (dBm), IP3 (dB)
GAIN (dB)
18
3 - 215
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Absolute Maximum Ratings
LINEAR & POWER AMPLIFIERS - CHIP
3
Drain Bias Voltage
+5.5 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
Thermal Resistance
(Channel to die bottom)
23.9 °C/W
Channel Temperature
180 °C
Storage Temperature
-65 °C to +150 °C
Operating Temperature
-55 °C to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 216
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone:Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
3, 5
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
4, 6
Vgg1, Vgg2
Gate control for the amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for
required external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Number
3 - 217
HMC-APH608
v03.0409
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 - 26.5 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 218
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of
