HMC1106
v01.0314
MIXERS - CHIP
GaAs MMIC MIXER
15 - 36 GHz
Typical Applications
Features
The HMC1106 is ideal for:
Passive: No DC Bias Required
• Microwave Point-to-Point Radios
Low LO Power: +15 dBm
• VSAT & SATCOM
LO/RF Isolation: 38 dB
• Test Equipment & Sensors
LO/IF Isolation: 32 dB
• Military End-Use
RF/IF Isolation: 25 dB
• Automotive Radar
Wide IF Bandwidth: DC to 24 GHz
Die Size: 1.79 x 1.46 x 0.1 mm
General Description
Functional Diagram
The HMC1106 is a double-balanced mixer which can
be used as a downconverter with DC to 24 GHz at
the IF port, 20 to 50 GHz at the LO port, and 15 to
36 GHz at the RF port. This passive MMIC mixer is
fabricated with GaAs Shottky diode technology. All
bond pads and the die backside are Ti/Au metallized
and the Shottky devices are fully passivated for
reliable operation. All data shown herein is measured
with the chip in a 50 Ohm environment and contacted
with RF probes.
Electrical Specifications, TA = +25° C, LO = 36.1 GHz, LO = +15 dBm, LSB [1]
Parameter
Min.
RF Frequency Range
Typ.
Max.
Min.
15 -24
Typ.
Max
Min.
24 - 27
Typ.
Max
27 - 36
Units
GHz
LO Frequency Range
20 - 50
GHz
IF Frequency Range
DC - 24
GHz
Conversion Loss
9
LO to RF Isolation
38
12
11
14
10
38
14
dB
38
dB
LO to IF Isolation
[2]
25
32
25
32
25
32
dB
RF to IF Isolation
[3]
15
22
15
18
15
25
dB
22
dBm
IP3 (Input)
16
16
[1] Unless otherwise noted , all measurements performed as downconverter with LO Frequency = 36.1 GHz and LO Power = +15 dBm
[2] Typical value = 22 dB at LO = 20 GHz
[3] Data taken with LO = 30 GHz
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
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Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
0
0
-2
-2
-4
-6
-8
-10
-12
-14
-16
-4
-6
-8
-10
-12
-14
-16
-18
-18
14
16
18
20
22
24
26
28
30
32
34
36
14
16
18
20
RF FREQUENCY (GHz)
+25 C
+85 C
-55 C
26
28
30
32
34
36
15 dBm
17 dBm
Conversion Loss vs. LO Power
IF = 12.1 GHz [2]
0
0
-2
-2
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
24
13 dBm
Conversion Loss vs. Temperature
IF = 12.1 GHz [2]
-4
-6
-8
-10
-12
-14
-16
-4
-6
-8
-10
-12
-14
-16
-18
-18
15
17
19
21
23
25
27
29
31
33
35
37
15
17
19
21
RF FREQUENCY (GHz)
+25 C
23
25
27
29
31
33
35
37
RF FREQUENCY (GHz)
+85 C
-55 C
13 dBm
Conversion Loss vs. Temperature
IF = 16.1 GHz [2]
15 dBm
17 dBm
Conversion Loss vs. LO Power
IF = 16.1 GHz [2]
0
0
-2
-2
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
22
RF FREQUENCY (GHz)
MIXERS - CHIP
Conversion Loss vs. LO Power
LO = 36.1 GHz [1]
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
Conversion Loss vs. Temperature
LO = 36.1 GHz [1]
-4
-6
-8
-10
-12
-14
-16
-4
-6
-8
-10
-12
-14
-16
-18
-18
15
17
19
21
23
25
27
29
31
33
15
17
19
RF FREQUENCY (GHz)
+25 C
+85 C
21
23
25
27
29
31
33
RF FREQUENCY (GHz)
-55 C
13 dBm
15 dBm
17 dBm
[1] Measurement taken at fixed LO frequency, LSB
[2] Measurement taken at fixed IF frequency, LSB
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
2
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
Conversion Loss vs. IF [1]
Input IP3 vs. IF [1]
0
35
30
-4
25
-6
IP3 (dBm)
CONVERSION LOSS (dB)
MIXERS - CHIP
-2
-8
-10
-12
20
15
10
-14
5
-16
-18
0
14
16
18
20
22
24
26
28
30
32
34
36
38
40
14
16
18
20
22
RF FREQUENCY (GHz)
0.1 GHz
4.1 GHz
8.1 GHz
12.1 GHz
16.1 GHz
20.1 GHz
24.1 GHz
28
30
32
34
36
38
40
16.1 GHz
20.1 GHz
24.1 GHz
Input IP3 vs. LO Power
LO = 36.1 GHz [2]
35
35
30
30
25
25
IP3 (dBm)
IP3 (dBm)
26
0.1 GHz
4.1 GHz
8.1 GHz
12.1 GHz
Input IP3 vs. Temperature
LO = 36.1 GHz [2]
20
15
20
15
10
10
5
5
0
0
14
16
18
20
22
24
26
28
30
32
34
36
14
16
18
20
RF FREQUENCY (GHz)
+25 C
22
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
+85 C
-55 C
13 dBm
Input IP3 vs. Temperature
IF = 12.1 GHz [1]
15 dBm
17 dBm
Input IP3 vs. LO Power
IF = 12.1 GHz [1]
35
35
30
30
25
25
IP3 (dBm)
IP3 (dBm)
24
RF FREQUENCY (GHz)
20
15
20
15
10
10
5
5
0
0
14
16
18
20
22
24
26
28
30
32
34
RF FREQUENCY (GHz)
+25 C
+85 C
36
14
16
18
20
22
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
-55 C
13 dBm
15 dBm
17 dBm
[1] Measurement taken at fixed IF frequency, LSB
[2] Measurement taken at fixed LO frequency, LSB
3
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
35
35
30
30
25
25
20
15
20
15
10
10
5
5
0
0
14
16
18
20
22
24
26
28
30
32
34
14
16
18
20
RF FREQUENCY (GHz)
+25 C
+85 C
-55 C
26
28
30
32
34
15 dBm
17 dBm
RF Return Loss vs. LO Power
LO = 30GHz
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
24
13 dBm
RF Return Loss vs. Temperature
LO = 30GHz
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-35
-35
14
16
18
20
22
24
26
28
30
32
34
36
38
40
14
16
18
20
22
RF FREQUENCY (GHz)
25 C
24
26
28
30
32
34
36
38
40
RF FREQUENCY (GHz)
85 C
-85 C
13 dBm
LO Return Loss vs. Temperature [2]
0
-5
-5
-10
-15
-20
15 dBm
17 dBm
LO Return Loss vs. LO Power
0
RETURN LOSS (dB)
RETURN LOSS (dB)
22
RF FREQUENCY (GHz)
MIXERS - CHIP
Input IP3 vs. LO Power
IF = 16.1 GHz [1]
IP3 (dBm)
IP3 (dBm)
Input IP3 vs. Temperature
IF = 16.1 GHz [1]
-10
-15
-20
-25
-25
20
25
30
35
40
45
50
LO FREQUENCY (GHz)
25 C
85 C
20
25
30
35
40
45
50
LO FREQUENCY (GHz)
-55 C
13 dBm
14 dBm
[1] Measurement taken at fixed IF frequency, LSB
[2] Measurement taken at LO power = +14 dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
4
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
LO/RF Isolation vs. LO Power
0
0
-10
-10
-20
-20
ISOLATION (dB)
ISOLATION (dB)
MIXERS - CHIP
LO/RF Isolation vs. Temperature
-30
-40
-50
-30
-40
-50
-60
-60
-70
-70
-80
-80
10
15
20
25
30
35
40
45
50
10
15
20
LO FREQUENCY (GHz)
+25 C
+85 C
0
-10
-10
ISOLATION (dB)
ISOLATION (dB)
35
40
45
50
15 dBm
17 dBm
LO/IF Isolation vs. LO Power
0
-20
-30
-40
-20
-30
-40
-50
-50
10
15
20
25
30
35
40
45
50
10
15
20
LO FREQUENCY (GHz)
+25 C
25
30
35
40
45
50
LO FREQUENCY (GHz)
+85 C
13 dBm
-55 C
RF/IF Isolation vs. Temperature
LO = 20 GHz
15 dBm
17 dBm
RF/IF Isolation vs. LO Power
LO = 20 GHz
0
0
-10
-10
ISOLATION (dB)
ISOLATION (dB)
30
13 dBm
-55 C
LO/IF Isolation vs. Temperature
-20
-30
-40
-20
-30
-40
-50
-50
10
15
20
25
30
35
40
10
15
20
RF FREQUENCY (GHz)
+25 C
5
25
LO FREQUENCY (GHz)
+85 C
25
30
35
40
RF FREQUENCY (GHz)
-55 C
13 dBm
15 dBm
17 dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
0
0
-10
-10
-20
-30
-40
MIXERS - CHIP
RF/IF Isolation vs. LO Power
LO = 30 GHz
ISOLATION (dB)
ISOLATION (dB)
RF/IF Isolation vs. Temperature
LO = 30 GHz
-20
-30
-40
-50
-50
10
15
20
25
30
35
40
10
15
20
RF FREQUENCY (GHz)
+25 C
25
30
35
40
RF FREQUENCY (GHz)
+85 C
13 dBm
-55 C
MxN Spurious Outputs, RF = 20GHz
15 dBm
17 dBm
MxN Spurious Outputs, RF = 25 GHz
nLO
nLO
mRF
0
1
2
3
4
mRF
0
1
2
3
4
0
xx
1
0
0
0
0
xx
0
0
0
0
1
9.8
0
0
0
0
1
12.5
0
22.5
0
0
2
58.5
30.3
41.7
0
0
2
56.5
25
33.3
0
0
3
0
35
46.6
56
0
3
0
53.7
55.8
57
0
4
0
78.5
62.6
57.4
0
4
0
0
73.6
64.4
68.8
RF = 20 GHz @ -4 dBm
RF = 25 GHz @ -4 dBm
LO = 35 GHz @ +13 dBm
LO = 35 GHz @ +13 dBm
Data taken without IF hybrid
Data taken without IF hybrid
All values in dBc below IF power level
All values in dBc below IF power level
MxN Spurious Outputs, RF = 30 GHz
nLO
mRF
0
1
2
3
4
0
xx
5
0
0
0
1
16.5
0.2
22.7
0
0
2
0
42.6
57.3
45.5
0
3
0
0
50.5
60.1
0
4
0
0
63.2
68.5
67.3
RF = 30 GHz @ -4 dBm
LO = 35 GHz @ +13 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
6
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
MIXERS - CHIP
Absolute Maximum Ratings
LO Input Power
+17 dBm
Maximum Junction Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 1.75 mW/°C above 85°C)
157 mW
Thermal Resistance (RTH)
(junction to die bottom)
570 °C/W
Operating Temperature
-55 to +85 °C
Storage Temperature
-65 to 150 °C
ESD Sensitivity (HBM)
Class1A, passed 250V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] For more information refer to the “Packaging
information” Document in the Product Support Section of
our website.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS 0.004”
3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099].
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± 0.002
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
Pad Descriptions
Function
Description
1
LO
This pad is AC coupled
and Matched to 50 Ohms.
2
RF
This pad is AC coupled
and Matched to 50 Ohms.
3
IF
This pad is DC coupled
and Matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground
Pad Schematic
MIXERS - CHIP
Pad Number
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
8
HMC1106
v01.0314
GaAs MMIC MIXER
15 - 36 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
MIXERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). One way to accomplish this is to attach the 0.102mm (4 mil)
thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (molytab) which is then attached to the ground plane (Figure 2). Microstrip
substrates should be located as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to
0.152 mm (3 to 6 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, tweezers,
or fingers.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible
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