HMC1131LC4TR

HMC1131LC4 v00.0215 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Typical Applications Features The HMC1131LC4 is ideal for: High Saturated Output Power: 25 dBm @ 16% PAE • Point-to-Point Radios High Output IP3: 35 dBm • Point-to-Multi-Point Radios High Gain: 22 dB • VSAT & SATCOM High P1dB Output Power: 24 dBm DC Supply: +5V @ 225 mA Compact 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description The HMC1131LC4 is a GaAs pHEMT MMIC driver amplifier which operates between 24 and 35 GHz. The amplifier provides 22 dB of gain, +35 dBm Output IP3, and +24 dBm of output power at 1 dB gain compression, while requiring 225 mA from a +5V supply. The HMC1131LC4 is capable of supplying +25 dBm of saturated output power with 16% PAE and is housed in a compact leadless 4x4 mm ceramic surface mount package. The HMC1131LC4 is an ideal driver amplifier for a wide range of applications including point-to-point radio from 24 to 35 GHz. Electrical Specifications TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = +5V, Idd = +225 mA [1] Parameter Min Frequency Range Gain Typ. Max Min 24 - 27 22 Units GHz 22 dB 0.022 dB/°C Input Return Loss 8 8 dB Output Return Loss 7 7 dB 24 24 dBm Saturated Output Power (Psat) 27 25 dBm Output Third Order Intercept (IP3) [2] 34 35 dBm Supply Current (Idd) 225 225 mA Output Power for 1 dB Compression (P1dB) 22 20 Max 0.031 Gain Variation over temperature 24 Typ. 27 - 35 [1] Adjust Vgg1 and Vgg2 between -2 to 0V to achieve Idd = 225mA typical [2] Measurement taken at Pout / tone = +10dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Broadband Gain & Return Loss Gain vs. Temperature 30 28 20 RESPONSE (dB) 26 10 GAIN (dB) 24 0 -10 22 20 18 16 -20 14 -30 12 23 25 27 29 31 33 35 24 37 25 26 27 28 S21 S11 S22 31 32 33 34 35 36 0 -5 -5 -10 -15 -20 -25 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 30 +25 C Input Return Loss vs. Temperature -30 -10 -15 -20 -25 -30 -35 -35 24 25 26 27 28 29 30 31 32 33 34 35 36 24 25 26 27 FREQUENCY (GHz) +25 C 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) +85 C -40 C P1dB vs. Temperature +25 C +85 C -40 C P1dB vs. Supply Voltage 30 30 28 28 26 26 24 24 P1dB (dBm) P1dB (dBm) 29 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT 30 22 20 22 20 18 18 16 16 14 14 12 12 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) +25 C +85 C 36 24 25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) -40 C 4V 5V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz 30 28 28 26 26 24 24 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 30 22 20 22 20 18 18 16 16 14 14 12 12 24 25 26 27 28 29 30 31 32 33 34 35 36 24 25 26 27 FREQUENCY (GHz) +25 C +85 C -40 C 29 30 31 32 33 4V 34 35 36 34 35 36 5V Psat vs. Supply Current 30 28 28 26 26 24 24 Psat (dBm) 30 22 20 22 20 18 18 16 16 14 14 12 12 24 25 26 27 28 29 30 31 32 33 34 35 24 36 25 26 27 175 mA 200 mA 28 29 30 31 32 33 FREQUENCY (GHz) FREQUENCY (GHz) 225 mA 250 mA 175 mA 200 mA Output IP3 vs. Temperature [1] 225 mA 250 mA Output IP3 vs. Supply Current [1] 40 40 38 38 36 36 34 34 IP3 (dBm) IP3 (dBm) 28 FREQUENCY (GHz) P1dB vs. Supply Current P1dB (dBm) AMPLIFIERS - LINEAR & POWER - SMT Psat vs. Temperature 32 30 28 32 30 28 26 26 24 24 22 22 20 20 24 25 26 27 28 29 30 31 32 33 34 35 FREQUENCY (GHz) +25 C +85 C 36 24 25 26 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) -40 C 175 mA 200 mA 225 mA 250 mA [1] Pout/Tone = +10 dBm 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Output IP3 vs. Supply Voltage [1] Output IM3 @ Vdd = +4V 40 70 36 60 IM3 (dBc) IP3 (dBm) 34 32 30 28 50 40 26 24 30 22 20 20 24 25 26 27 28 29 30 31 32 33 34 35 36 4 6 8 FREQUENCY (GHz) 4V 12 14 28 GHz 30 GHz 5V Output IM3 @ Vdd = +5V 16 32 GHz 34 GHz Power Compression @ 30.5 GHz 30 400 60 25 370 20 340 15 310 10 280 5 250 Pout(dBm), GAIN(dB), PAE(%) 70 50 40 30 20 220 0 4 6 8 10 12 14 16 -15 -13 -11 -9 Pout/TONE (dBm) 28 GHz 30 GHz Idd (mA) IM3 (dBc) 10 Pout/TONE (dBm) -7 -5 -3 -1 1 3 5 7 9 INPUT POWER (dBm) 32 GHz 34 GHz Pout Gain PAE AMPLIFIERS - LINEAR & POWER - SMT 38 Idd Gain & Power vs. Supply Current @ 30.5 GHz Gain & Power vs. Supply Voltage @ 30.5 GHz 27 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 27 26 25 24 23 22 21 20 26 25 24 23 22 21 20 19 19 175 200 225 250 4 4.2 4.4 Idd (mA) GAIN P1dB 4.6 4.8 5 Vdd (V) Psat GAIN P1dB Psat [1] Pout/Tone = +10 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Reverse Isolation vs. Temperature Power Dissipation @ 85C 2 POWER DISSIPATION (W) ISOLATION (dB) -10 -20 -30 -40 -50 1.8 1.6 1.4 1.2 1 0.8 0.6 -12 -60 24 25 26 27 28 29 30 31 32 33 34 35 36 -9 -6 +25 C -3 0 3 6 9 INPUT POWER (dBm) FREQUENCY (GHz) +85 C -40 C Input IP3 vs Idd over Pout/tone @ 30 GHz [1] 27 GHz 28 GHz 30 GHz 32 GHz 33 GHz 34 GHz Output IP3 vs Idd over Pout/tone @ 30 GHz [1] 25 40 35 20 30 IP3 (dBm) IP3 (dBm) AMPLIFIERS - LINEAR & POWER - SMT 0 15 10 25 20 15 10 5 5 0 170 175 180 185 190 195 200 205 210 215 220 225 0 170 175 180 185 190 195 200 205 210 215 220 225 Idd (mA) Idd (mA) 14 dBm 12 dBm 10 dBm 14 dBm 12 dBm 10 dBm Gain vs Idd over Pout/tone = 14 dBm @ 30 GHz [1] 25 GAIN (dB) 20 15 10 5 0 170 175 180 185 190 195 200 205 210 215 220 225 Idd (mA) [1] Vdd = 5V, Idd2 fixed =170mA, Idd1 varied 0 to 50 mA 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) 5.5V Vdd (V) Idd (mA) RF Input Power (RFIN) +12 dBm +4 225 Channel Temperature 175 °C +5 225 Continuous Pdiss (T=85 °C) (derate 22mW/°C 1.97W Thermal Resistance (RTH) (junction to ground paddle) 45.5°C/W Operating Temperature -40 °C to +85 °C Storage Temperature -65 °C to 150 °C ESD Sensitivity (HBM) Class 0, Passed 150V Adjust Vgg1 to achieve Idd = 225 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish HMC1131LC4 Alumina White Gold over Nickel MSL Rating [2] MSL3 [2] Package Marking [1] H1131 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 6 HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz Pin Descriptions AMPLIFIERS - LINEAR & POWER - SMT Pin Number 7 Function Description 1, 5, 6, 7, 9, 10, 12, 13, 14, 18, 19, 24 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 3 RF IN This pin is DC coupled and matched to 50 Ohms. 2, 4, 15, 17 GND These pins and package bottom must be connected to RF/DC ground. 8, 11 Vgg1, Vgg2 Gate control for amplifier. External bypass capacitors of 100 pF, 10 nF and 4.7 uF are required. 16 RF OUT This pin is DC coupled and matched to 50 Ohms. 20, 21, 22, 23 Vdd1, Vdd2, Vdd3, Vdd4 Drain bias voltage for amplifier. External bypass capacitors of 100 pF, 10 nF and 4.7 uF are required. Pin Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz AMPLIFIERS - LINEAR & POWER - SMT Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 8 HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB THRU CAL VD2 TP1 VD3 TP2 TP3 + C16 C18 C11 C3 C1 C2 C4 C15 C10 C17 + C9 + C8 + VD4 TP4 VD1 U1 C12 C6 C7 C5 C13 C20 TP5 VG2 C14 600-00145-00-1 RFIN + + RFOUT + C21 C19 TP6 TP7 VCTRL VG1 List of Materials for Evaluation PCB EV1HMC1131LC4 Item Description J1, J2 PCB Mount K Connectors TP1 - TP7 DC Pin C1 - C6 100 pF Capacitor, 0402 Pkg. C8 - C13 10000 pF Capacitor, 0402 Pkg C15 - C20 2.2 uF Capacitor, 0402 Pkg. U1 HMC1131LC4 PCB [2] 600-00145-00 Evaluation Board [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from ADI upon request. [1] Reference this number when ordering Complete Evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC1131LC4 v00.0215 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 24 - 35 GHz AMPLIFIERS - LINEAR & POWER - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 10