HMC144

HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Typical Applications Features The HMC143 & HMC144 is ideal for: Input IP3: +25 dBm • Microwave Point-to-Point Radios LO / RF Isolation: 30 dB • VSAT IF Bandwidth: DC to 3 GHz Small Size: 2.10 x 1.45 x 0.1 mm B SO LE The HMC143 chip is a minature double-balanced mixer which can be used as an upconverter or downconverter. The chip utilizes a standard 1μm GaAs MESFET process. The HMC144 is identical to the HMC143 except that the layout is a mirror image designed to ease integration into image-reject mixer modules. Broadband operation and excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. The design is similar to the HMC141/142 mixers but with an IF combiner in a double-balanced design, providing improved RF/IF isolation. These devices are much smaller and more reliable replacements to hybrid diode mixers. Electrical Specifi cations, TA = +25° C, LO Drive = +20 dBm Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range, RF & LO 5 - 10.5 10.5 - 15.5 15.5 - 20 GHz Frequency Range, IF DC - 3 DC - 3 DC - 3 GHz Conversion Loss 10 12 10 12 10 12 dB Noise Figure (SSB) 10 12 10 12 10 12 dB LO to RF Isolation 26 30 24 28 26 30 dB LO to IF Isolation 15 18 12 15 14 17 dB IP3 (Input) 21 25 23 dBm IP2 (Input) 50 50 50 dBm 15 dBm 1 dB Gain Compression (Input) 4 - 28 General Description TE Functional Diagram O MIXERS - DOUBLE-BALANCED - CHIP 4 10 15 10 15 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Conversion Gain vs. Temperature @ LO = +20 dBm Isolation @ LO = +20 dBm 0 -10 -30 TE +25 C +85 C -55 C -15 -20 -50 4 6 8 10 12 14 16 18 20 4 22 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) LE FREQUENCY (GHz) Conversion Gain vs. LO Drive Return Loss @ LO = +20 dBm 0 0 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +20 dBm -10 -15 4 6 8 10 12 14 16 18 20 LO -10 -15 -20 -25 4 22 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +20 dBm O IF Bandwidth @ LO = +20 dBm 0 0 CONVERSION GAIN (dB) -5 -10 -15 -20 IF CONVERSION GAIN -25 RF -5 B SO -5 -20 RESPONSE (dB) 4 -40 -5 MIXERS - DOUBLE-BALANCED - CHIP ISOLATION (dB) -5 -20 CONVERSION GAIN (dB) RF to IF LO to RF LO to IF -10 RETURN LOSS (dB) CONVERSION GAIN (dB) 0 -10 -15 IF RETURN LOSS -30 -20 0 1 2 3 4 FREQUENCY (GHz) 5 6 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 29 HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Input IP3 vs. Temperature @ LO = +20 dBm 35 30 30 25 25 20 15 10 20 15 +25 C +85 C -55 C 10 TE LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +20 dBm 5 5 0 0 4 6 8 10 12 14 16 18 20 4 22 6 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) LE FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +20 dBm Input IP2 vs. LO Drive* 25 80 70 40 30 B SO 50 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +20 dBm 20 10 0 4 6 8 10 12 14 16 18 20 22 15 10 +25C +85C -55C 5 0 4 6 8 10 12 14 16 FREQUENCY (GHz) O FREQUENCY (GHz) P1dB (dBm) 20 60 IP3 (dBm) MIXERS - DOUBLE-BALANCED - CHIP 4 35 IP3 (dBm) IP3 (dBm) Input IP3 vs. LO Drive* * Two-tone input power = 0 dBm each tone, 1 MHz spacing. 4 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz MxN Spurious @ IF Port Harmonics of LO nLO Spur @ RF Port 1 2 3 4 LO Freq. (GHz) 1 2 3 4 0 XX -11 18 2 22 6 37 35 58 38 1 43 0 46 15 31 8 38 36 54 46 2 67 61 63 69 68 10 33 36 50 56 3 77 74 80 68 80 12 28 28 41 N/A 4 72 77 77 80 80 14 30 40 N/A N/A TE 0 RF = 6 GHz @ -10 dBm LO = 6.1 GHz @ 20 dBm All values in dBc relative to the IF power level. Measured as downconverter. 16 33 41 N/A N/A 18 32 47 N/A N/A 20 29 43 N/A N/A Absolute Maximum Ratings LE LO = +20 dBm All values in dBc below input LO level @ RF port. +15 dBm LO Drive +27 dBm IF DC Current ± 2 mA Channel Temperature 150 °C 924 mW Thermal Resistance (RTH) (junction to package bottom) 70.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Standard Alternate WP-4 [2] ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS O Continuous Pdiss (T=85 °C) (derate 14.2 mW/°C above 85 °C) [1] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. B SO RF / IF Input Die Packaging Information For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP nLO mRF 4 - 31 HMC143 / HMC144 v05.1007 Outline Drawings GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz (See HMC143/144 Operation Application Note) HMC143 4 - 32 TE LE B SO HMC144 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. O MIXERS - DOUBLE-BALANCED - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Pad Descriptions HMC143 (HMC144) Description 1 (2) LO This pin is AC coupled and matched to 50 Ohms. 2 (1) RF This pin is AC coupled and matched to 50 Ohms. IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/ sink more than 2 mA of current or die non-function and possible die failure will result. GND The backside of the die must be connected to RF ground. LE O B SO 3 (3) Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP Function TE Pad Number 4 - 33 HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Assembly Drawing 4 - 34 TE LE B SO O MIXERS - DOUBLE-BALANCED - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC143 / HMC144 v05.1007 GaAs MMIC DOUBLE-BALANCED MIXER, 5 - 20 GHz Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. TE General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding LE Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. O B SO RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 4 - 35