HMC331

HMC331 v04.1007 Features The HMC331 is suitable for: Conversion Loss: 14 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 50 dB • LMDS, VSAT, and Point-to-Point Radios Passive: No Bias Required • Test Equipment Die Size: 0.85 x 0.55 x 0.1 mm Functional Diagram General Description TE Typical Applications B SO LE The HMC331 is a passive miniature frequency doubler MMIC. Suppression of undesired fundamental and higher order harmonics is 50 dB typical with respect to input signal level. The doubler utilizes the same GaAs Schottky diode/balun technology found in Hittite MMIC mixers. It features small size, requires no DC bias, and adds no measurable additive phase noise onto the multiplied signal. Electrical Specifi cations, TA = +25° C, As a Function of Drive Level O FREQUENCY MULTIPLIERS - PASSIVE - CHIP 2 Parameter Input = +11 dBm Min. Typ. Input = +13 dBm Max. Min. Typ. Input = +15 dBm Max. Min. Typ. Frequency Range, Input 13 - 18 12 - 18 12 - 18 Frequency Range, Output 26 - 36 24 - 36 24 - 36 Conversion Loss 2 - 22 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT 15 20 14 20 14 Max. Units GHz GHz 19 dB FO Isolation (with respect to input level) 45 50 45 50 45 50 dB 3FO Isolation (with respect to input level) 50 60 45 60 47 60 dB 4FO Isolation (with respect to input level) 50 60 50 60 50 60 dB For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Conversion Loss @ 25 C Vs. Drive Level CONVERSION GAIN (dB) + 25 C + 85 C -55 C -5 -10 -5 + 15 dBm + 13 dBm + 11 dBm -10 -15 -20 TE -15 -20 -25 -25 -30 12 13 14 15 16 17 18 12 Isolation @ +15 dBm Drive Level* 13 14 15 16 17 18 FREQUENCY (GHz) LE INPUT FREQUENCY (GHz) Input Return Loss vs. Drive Level 0 0 Fo 3Fo 4Fo -40 -60 -80 -100 10 -5 B SO -20 ISOLATION (dB) 2 0 15 20 25 30 35 40 45 50 RETURN LOSS (dB) CONVERSION GAIN (dB) 0 -10 -15 + 15 dBm + 13 dBm + 11 dBm -20 -25 -30 12 13 14 15 16 17 18 FREQUENCY (GHz) FREQUENCY (GHz) *With respect to input level Output Return Loss For Three Input Frequencies O Absolute Maximum Ratings RETURN LOSS (dB0 0 13 GHz In 15 GHz In 18 GHz In -6 Input Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C FREQUENCY MULTIPLIERS - PASSIVE - CHIP Conversion Loss vs. Temperature @ +15 dBm Drive Level -12 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS -18 -24 -30 22 24 26 28 30 32 34 36 OUTPUT FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 2 - 23 HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Outline Drawing 2 - 24 TE LE Die Packaging Information [1] Standard Alternate GP-5 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. B SO [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Pad Description O FREQUENCY MULTIPLIERS - PASSIVE - CHIP 2 Pad Number Function Description 1 RFIN DC coupled and matched to 50 Ohm. 2 RFOUT DC coupled and matched to 50 Ohm. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC331 v04.1007 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 12 - 18 GHz INPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) TE RF Ground Plane Microstrip substrate should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075mm ( 3 mil) width and minimal length