HMC349AMS8G

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM RF2 HMC349AMS8G VDD 50Ω DRIVER RFC 50Ω EN CTRL GND RF1 15025-001 Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI_SO_EP) Figure 1. APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment GENERAL DESCRIPTION The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm. The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad. Rev. F Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC349AMS8G Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Insertion Loss, Return Loss, and Isolation ................................6 Functional Block Diagram .............................................................. 1 Input Power Compression and Third-Order Intercept (IP3).......7 General Description ......................................................................... 1 Theory of Operation .........................................................................8 Revision History ............................................................................... 2 Applications Information .................................................................9 Specifications..................................................................................... 3 Evaluation Board ...........................................................................9 Absolute Maximum Ratings............................................................ 4 Outline Dimensions ....................................................................... 10 ESD Caution .................................................................................. 4 Ordering Guide .......................................................................... 10 Pin Configuration and Function Descriptions ............................. 5 Interface Schematics..................................................................... 5 REVISION HISTORY 10/2019—Rev. E to Rev. F Changes to Table 1 ............................................................................ 3 Updated Outline Dimensions ....................................................... 10 Changes to Ordering Guide .......................................................... 10 8/2019—Rev. D to Rev. E Updated Outline Dimensions ....................................................... 10 Changes to Ordering Guide .......................................................... 10 8/2018—Rev. C to Rev. D Changed Reflow (MSL1 Rating) to Reflow, Table 2 .................... 4 Deleted Note 2, Table 2; Renumbered Sequentially ..................... 4 Changes to Ordering Guide .......................................................... 10 12/2016—Rev. B to Rev. C Change to Frequency Range Parameter, Table 1 ...........................3 This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 10/2016—v01.0214 to Rev. B Changes to Features Section ............................................................1 Changes to Table 2.............................................................................4 Changes to Theory of Operation Section.......................................8 Updated Outline Dimensions ....................................................... 10 Changes to Ordering Guide .......................................................... 10 Rev. F | Page 2 of 10 Data Sheet HMC349AMS8G SPECIFICATIONS VDD = 3 V to 5 V, VCTRL = 0 V or VDD, VEN = 0 V, TCASE = 25°C, 50 Ω system, unless otherwise noted. Table 1. Parameter FREQUENCY RANGE INSERTION LOSS Between RFC and RF1/RF2 Symbol 0.1 GHz to 1 GHz 0.1 GHz to 2 GHz 0.1 GHz to 3 GHz 0.1 GHz to 4 GHz 0.1 GHz to 1 GHz 0.1 GHz to 2 GHz 0.1 GHz to 3 GHz 0.1 GHz to 4 GHz Between RF1 and RF2 RETURN LOSS RFC RF1/RF2 On Off 1 tRISE, tFALL tON, tOFF P0.1dB 1 dB Power Compression P1dB Third-Order Intercept IP3 SUPPLY Voltage Current DIGITAL CONTROL INPUTS Low Voltage High Voltage Low Current High Current Min 0.1 0.1 GHz to 1 GHz 0.1 GHz to 2 GHz 0.1 GHz to 3 GHz 0.1 GHz to 4 GHz ISOLATION Between RFC and RF1/RF2 SWITCHING Rise and Fall Time On and Off Time INPUT LINEARITY1 0.1 dB Power Compression Test Conditions/Comments Max 4 Unit GHz 0.8 0.9 1.2 1.8 1.1 1.2 1.5 2.1 dB dB dB dB 70 57 50 45 55 46 43 38 dB dB dB dB dB dB dB dB 0.1 GHz to 1 GHz 0.1 GHz to 2 GHz 0.1 GHz to 3 GHz 0.1 GHz to 4 GHz 21 18 16 14 dB dB dB dB 0.1 GHz to 1 GHz 0.1 GHz to 2 GHz 0.1 GHz to 3 GHz 0.1 GHz to 4 GHz 0.5 GHz to 1 GHz 0.5 GHz to 2 GHz 0.5 GHz to 3 GHz 0.5 GHz to 4 GHz 22 20 19 19 23 18 15 13 dB dB dB dB dB dB dB dB 10% to 90% of radio frequency (RF) output 50% VCTRL to 90% of RF output 250 MHz to 4 GHz VDD = 3 V VDD = 5 V VDD = 3 V VDD = 5 V Input power = 10 dBm/tone, Δf = 1 MHz VDD = 3 V VDD = 5 V VDD pin 60 160 ns ns 25 31 28 34 dBm dBm dBm dBm 54 52 dBm dBm VDD IDD 60 54 45 42 Typ 30 3 1.2 5 3.5 V mA 0.8 VDD V V μA μA CTRL pin and EN pin VINL VINH IINL IINH 0 2