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HMC374SC70ETR

HMC374SC70ETR

  • 厂商:

    AD(亚德诺)

  • 封装:

    SOT-363

  • 描述:

    IC AMP LNA GAAS PHEMT SC70-6

  • 数据手册
  • 价格&库存
HMC374SC70ETR 数据手册
HMC374SC70E v01.0814 Amplifiers - SMT GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Typical Applications Features The HMC374SC70E is ideal for: Single Supply: Vdd = +3.0 to +3.6V • Cellular/PCS/3G Broadband Performance • WCS, MMDS & ISM Low Noise Figure: 1.6 dB • Fixed Wireless & WLAN High Output IP3: +35 dBm • Private Land Mobile Radio High Gain: 15 dB @ 0.6 GHz Functional Diagram General Description The HMC374SC70E is a general purpose broadband Low Noise Amplifier (LNA) for use in the 0.3 3 GHz frequency range. The LNA provides 15 dB of gain and a 1.6 dB noise figure from a single positive supply of +3.0 to +3.6V. The low noise figure coupled with a high P1dB (17 dBm) and high OIP3 (35 dBm) make this part ideal for cellular applications. The compact LNA is designed for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SC70E package that occupies only 0.089" x 0.053". Electrical Specifications, Vdd= +3.3V Parameter Min. [2] Frequency Gain Typ.[1] Max. [2] Min. [2] 0.6 14 Gain Variation Over Temperature (-40°C to +25°C) Typ. [1] Max. [2] Min. [2] 1.0 15 13 14.5 6 Typ. [1] Units GHz 8.5 dB 0.005 0.008 0.012 0.004 0.005 0.008 dB/°C Gain Variation Over Temperature (+25 °C to +85 °C) Noise Figure 2 2.6 1.6 2.3 1.8 Input Return Loss 4.5 5.5 6 7.5 8 9 Output Return Loss 5.5 7.5 8 10 13 15 Output 1 dB Compression (P1dB) 15.5 16.5 16 17 16.5 18 Saturated Output Power (Psat) 17.5 18.5 17.5 18.5 18 Output Third Order Intercept (OIP3) 34 Supply Current (Idd) (Vdd = +3.3V) Supply Voltage (Vdd) Max. [2] 3.0 33.5 75 3.0 3.3 3.0 3.3 dB 19 dBm 36 75 3.6 2.2 75 3.6 3.0 3.3 mA 3.6 V [1] Typical values are determined at TA=+25°C [2] Minimum and maximum values are determined from TA=-40°C to TA=+85°C 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz 20 20 16 18 12 16 8 14 4 0 S21 S11 S22 -4 12 10 8 -8 6 -12 4 -16 2 -20 +25C +85C -40C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FREQUENCY (GHz) Input Return Loss vs. Temperature 2 2.5 3 3.5 4 Output Return Loss vs. Temperature 0 0 -2 -2 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 1.5 FREQUENCY (GHz) -4 -6 -8 -10 -12 +25C +85C -40C -14 Amplifiers - SMT Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss -4 +25C +85C -40C -6 -8 -10 -12 -14 -16 -18 -20 -16 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 1 1.5 2 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature [1] 5 3 3.5 4 46 44 42 +25C +85C -40C +25C +85C -40C 40 OIP3 (dBm) NOISE FIGURE (dB) 4 3 2 38 36 34 32 30 1 28 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 FREQUENCY (GHz) 2.7 3 26 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) [1] OIP3 measurements were taken for Pout = 0 dBm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 2 HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Output Psat vs. Temperature 22 22 20 20 Psat (dBm) P1dB (dBm) Amplifiers - SMT Output P1dB vs. Temperature 18 16 +25C +85C -40C 14 12 0.5 1 1.5 2 2.5 3 18 16 +25C +85C -40C 14 12 0.5 3.5 1 1.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Pout (dBm), Gain (dB), PAE (%) +25C +85C -40C -10 ISOLATION (dB) 3 3.5 30 -5 -15 -20 -25 -30 -35 Pout Gain PAE 25 20 15 10 5 0 -40 0 0.5 1 1.5 2 2.5 3 3.5 -5 -4 -3 -2 -1 4 0 Gain, Noise Figure & P1dB vs. Supply Voltage @ 2 GHz 4 5 6 7 8 9 10 11 7 75 Noise Figure 14 4 12 3 10 2 8 1 0 6 4 4.5 Vdd (V) 5 5.5 NOISE FIGURE (dB) 5 16 Idd (mA) 6 18 3.5 3 76 8 P1dB Gain 3 2 Supply Current vs. Input Power @ 2 GHz 22 20 1 INPUT POWER (dBm) FREQUENCY (GHz) GAIN (dB), P1dB (dBm) 2.5 Pout, Gain & PAE @ 2 GHz 0 3 2 FREQUENCY (GHz) 74 73 72 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 INPUT POWER (dBm) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7.0 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5.0 Vdc) 15 dBm 3 75 Channel Temperature 150 °C 3.3 75 3.6 75 Continuous Pdiss (T = 85 °C) (derate 4.88 mW/°C above 85 °C) 0.32 W Thermal Resistance (channel to lead) 205 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 0 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Amplifiers - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. C  HARACTERS TO BE HELVETICA MEDIUM, .015 HIGH, WHITE INK OR LASER, LOCATED APPROXIMATELY AS SHOWN. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 7. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 8. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC374SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [3] H374E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 4 HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Amplifiers - SMT Pin Descriptions Pin Number Function Description 1,4 N/C These pins may be connected to RF/DC ground. Performance will not be affected. 2, 5 GND These pins must be connected to RF/DC ground. 3 IN RF input pin is DC coupled. An off-chip DC blocking capacitor is required. 6 OUT RF output and DC Bias for the output stage. See application circuit for off-chip components. Interface Schematic Application Circuit 5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Amplifiers - SMT Evaluation PCB List of Materials for EVAL01-HMC374SC70E [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1 27 pF Capacitor, 0402 Pkg. C2 150 pF Capacitor, 0402 Pkg. C3 10 nF Capacitor, 0603 Pkg. C4 4.7 Capacitor, Tantalum L1 27 nH Inductor, 0603 Pkg. L2 22 nH Inductor, 0402 Pkg. R1 10 Ohms Resistor, 0402 Pkg. R2 0 Ohm Resistor, 0402 Pkg. U1 HMC374SC70E Amplifier PCB [2] 600-00435-00 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery,Drive, and to Chelmsford, place orders: Analog Devices, Inc., Foris assumed price, bydelivery andforto place orders: Analog Devices, 2 Elizabeth MA 01824 responsibility Analog Devices its use, nor for any infringements of patents or other Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 6
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