HMC441-SX

HMC441 v09.0917 LINEAR & POWER AMPLIFIERS - CHIP GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features The HMC441 is ideal for: Gain: 15.5 dB • Point-to-Point and Point-to-Multi-Point Radios Saturated Power: +22 dBm @ 23% PAE • VSAT • LO Driver for HMC Mixers Single Supply Voltage: +5V w/ Optional Gate Bias • Military EW & ECM 50 Ohm Matched Input/Output Die Size: 0.94 x 0.94 x 0.1 mm Functional Diagram General Description The HMC441 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 6 and 18 GHz. The amplifier provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. The HMC441 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open Parameter Min. Frequency Range Gain 13 Gain Variation Over Temperature Max. Min. 15.5 0.015 Typ. Max. Min. 8.0 - 12.5 14 0.02 16.5 0.015 Typ. Max. Min. 12.5 - 14.0 13 0.02 15.5 0.015 Typ. Max. 14.0 - 15.5 12 0.02 GHz 14.5 0.015 Units dB 0.02 dB/ °C Input Return Loss 10 13 15 14 dB Output Return Loss 14 17 23 18 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 Typ. 7.0 - 8.0 15.5 18.5 16 19 17 20 17 20 dBm 17 20 18 21 19 22 19 22 dBm dBm Output Third Order Intercept (IP3) 29 31 32 32 Noise Figure 5.0 4.5 4.5 4.5 Supply Current (Idd) 90 90 90 115 90 115 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. dB 115 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz 20 10 16 0 -10 12 8 4 -20 0 -30 4 6 8 10 12 14 16 18 6 20 8 10 S21 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) S11 S22 +25 C Input Return Loss vs. Temperature +85 C -55 C Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -12 -10 -15 -20 -25 -16 -30 -35 -20 6 8 10 12 14 16 6 18 8 10 +25 C +85 C +25 C -55 C P1dB vs. Temperature 14 16 18 +85 C -55 C Psat vs. Temperature 25 25 23 23 Psat (dBm) P1dB (dBm) 12 FREQUENCY (GHz) FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - CHIP Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 21 19 17 21 19 17 15 15 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) +25 C +85 C 12 14 16 18 FREQUENCY (GHz) -55 C +25 C +85 C -55 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Power Compression @ 11 GHz Power Compression @ 15 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -10 -6 -2 2 6 25 20 15 10 5 0 -10 10 -6 -2 INPUT POWER (dBm) Pout (dBm) Gain (dB) Pout (dBm) PAE (%) 32 8 NOISE FIGURE (dB) 10 28 24 20 10 14 Gain (dB) PAE (%) 6 4 2 16 0 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) +25 C +85 C -55 C +25 C 14 16 18 0 22 -10 20 18 16 14 +85 C -55 C Reverse Isolation vs. Temperature 24 -20 -30 -40 -50 12 10 2.7 12 FREQUENCY (GHz) ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) 6 Noise Figure vs. Temperature 36 Gain & Power vs. Supply Voltage @ 11 GHz -60 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 6 8 10 Vdd (V) Gain 3 2 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIERS - CHIP 30 P1dB 12 14 16 18 FREQUENCY (GHz) Psat +25 C +85 C -55 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz -70 30 180 -80 25 150 20 120 15 90 10 60 5 30 0 0 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 PHASE NOISE (dBc/Hz) 210 Idd (mA) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 35 -90 -100 -110 -120 -130 -140 -150 -160 Vgg1, Vgg2 Gate Voltage (V) Gain P1dB Psat IP3 -170 10 100 Idd 1K 10K 100K 1M OFFSET FREQUENCY (Hz) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +4.5 88 RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 90 Channel Temperature 175 °C +5.5 92 +2.7 80 +3.0 82 +3.3 83 Continuous Pdiss (T= 85 °C) (derate 8.5 mW/°C above 85 °C) 0.76 W Thermal Resistance (channel to die bottom) 118 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above LINEAR & POWER AMPLIFIERS - CHIP Additive Phase Noise Vs Offset Frequency, RF Frequency = 8 GHz, RF Input Power = 5 dBm (P1dB) Gain, Power & Output IP3 vs. Gate Voltage @ 12 GHz ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz LINEAR & POWER AMPLIFIERS - CHIP Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Pad Descriptions Pad Number 5 Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3 Vdd1, Vdd2 Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5, 6 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. Pin Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz LINEAR & POWER AMPLIFIERS - CHIP (a) Assembly for Single Supply Voltage Operation For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz LINEAR & POWER AMPLIFIERS - CHIP (b) Assembly with Optional Gate Bias Voltage Operation 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441 v09.0917 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible