HMC442-SX

HMC442 v04.0913 LINEAR & POWER AMPLIFIERS - CHIP GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Typical Applications Features The HMC442 is ideal for use as a medium power amplifier for: Saturated Power: +23 dBm @ 25% PAE • Point-to-Point and Point-to-Multi-Point Radios Supply Voltage: +5V • VSAT 50 Ohm Matched Input/Output Gain: 15 dB Die Size: 1.03 x 1.13 x 0.1 mm Functional Diagram General Description The HMC442 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 17.5 and 25.5 GHz. The HMC442 provides 15 dB of gain, +23 dBm of saturated power and 25% PAE from a +5V supply voltage. The amplifier chip can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 85mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 17.5 - 21.0 12 Gain Variation Over Temperature Max. Min. 21.0 - 24.0 14.5 0.02 Typ. 12 0.03 Max. 24.0 - 25.5 15 0.02 Typ. 13.5 0.03 GHz 16 0.02 Units dB 0.03 dB/ °C Input Return Loss 15 13 10 Output Return Loss 10 10 10 dB dB Output Power for 1 dB Compression (P1dB) 18 21 18.5 21.5 19 22 dBm Saturated Output Power (Psat) 20 23 20 23 20 23.5 dBm dBm Output Third Order Intercept (IP3) 29 28 27 Noise Figure 6.5 5.5 6 Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.) 85 110 85 110 85 dB 110 mA * Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC442 v04.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz 20 10 16 0 -10 -20 12 8 4 -30 0 14 17 20 23 26 29 16 17 18 19 FREQUENCY (GHz) S21 S11 22 23 24 25 26 27 0 -5 -5 -10 -15 -20 +85 C -55 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 21 +25 C S22 Input Return Loss vs. Temperature -25 -10 -15 -20 -25 -30 -30 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) +25 C 20 21 22 23 24 25 26 27 FREQUENCY (GHz) +85 C -55 C +25 C P1dB vs. Temperature +85 C -55 C Psat vs. Temperature 30 30 26 26 Psat (dBm) P1dB (dBm) 20 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - CHIP Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 22 18 14 22 18 14 10 10 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 +25 C +85 C 20 21 22 23 24 25 26 27 FREQUENCY (GHz) FREQUENCY (GHz) -55 C +25 C +85 C -55 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC442 v04.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Power Compression @ 21 GHz Power Compression @ 25 GHz 35 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -10 -6 -2 2 6 10 30 25 20 15 10 5 0 -10 14 -6 -2 Pout (dBm) Gain (dB) PAE (%) Output IP3 vs. Temperature Pout (dBm) 30 8 NOISE FIGURE (dB) 10 26 22 18 10 14 Gain (dB) PAE (%) 6 4 2 14 0 16 17 18 19 20 21 22 23 24 25 26 27 16 17 18 19 FREQUENCY (GHz) +25 C 20 21 22 23 24 25 26 FREQUENCY (GHz) +85 C +25 C -55 C +85 C -55 C Reverse Isolation vs. Temperature 0 26 24 -10 22 ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) 6 Noise Figure vs. Temperature 34 Gain & Power vs. Supply Voltage @ 25 GHz 20 18 16 -20 -30 -40 14 -50 12 10 2.7 -60 3.1 3.5 3.9 4.3 4.7 5.1 5.5 16 17 18 19 Gain P1dB 20 21 22 23 24 25 26 27 FREQUENCY (GHz) Vdd Supply Voltage (Vdc) 3 2 INPUT POWER (dBm) INPUT POWER (dBm) IP3 (dBm) LINEAR & POWER AMPLIFIERS - CHIP 28 Psat +25 C +85 C -55 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC442 v04.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Drain Bias Voltage (Vdd) +5.5 Vdc Gate Bias Voltage (Vgg) -4 to 0 Vdc Vdd (Vdc) Idd (mA) +4.5 82 RF Input Power (RFIN)(Vdd = +5Vdc) Channel Temperature +20 dBm +5.0 85 175 °C +5.5 89 +2.7 79 Continuous Pdiss (T= 85 °C) (derate 7.1 mW/°C above 85 °C) 0.64 W Thermal Resistance (channel to die bottom) 141 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C +3.0 83 +3.3 86 Note: Amplifier will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. LINEAR & POWER AMPLIFIERS - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC442 v04.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz LINEAR & POWER AMPLIFIERS - CHIP Pad Descriptions 5 Pad Number Function Description 1 Vgg Gate control for amplifier. Adjust to achieve Id of 85mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. 2 RFIN This pad is AC coupled and matched to 50 Ohms 3 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 µF are required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Pin Schematic Assembly Diagram Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC442 v04.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIERS, 17.5 - 25.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible