HMC462-SX

HMC462 v02.0213 Amplifiers - Low Noise Amplifiers - Chip GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 is ideal for: Noise Figure: 2 dB • Test Instrumentation Gain: 15 dB • Microwave Radio & VSAT P1dB +15.5 dBm • Military & Space Self-Biased: +5V @ 63 mA • Telecom Infrastructure 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.0 x 1.3 x 0.1 mm Functional Diagram General Description The HMC462 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier which operates between 2 and 20 GHz. The amplifier provides 15 dB of small signal gain, 2.5 dB noise figure, and up to +15.5 dBm of output power at 1dB compression. Gain flatness is excellent at ±0.3 dB from 8 - 14 GHz making the HMC462 ideal for EW, ECM, and Radar applications. The HMC462 requires a single supply of +5V @ 63 mA and is the self biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-ChipModules (MCMs). All data is measured with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 63 mA Parameter Min. Frequency Range Gain Max. Min. 2-8 13.5 Typ. Max. Min. 8 - 16 15.5 13 15 12.5 Typ. Max. Units 16 - 20 GHz 14.5 dB Gain Flatness ±0.2 ±0.3 ±0.2 dB Gain Variation Over Temperature 0.005 0.011 0.019 dB/ °C Input Return Loss 16 19 16 dB Output Return Loss 18 19 18 dB 13 dBm Output Power for 1 dB Compression (P1dB) 12.5 15.5 11.5 14.5 10 Saturated Output Power (Psat) 18 17 15.5 dBm Output Third Order Intercept (IP3) 26 25 24 dBm Noise Figure Supply Current (Idd) 1 Typ. 3 41 63 2.5 84 41 63 2.5 84 41 63 dB 84 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Gain & Return Loss Gain vs. Temperature 16 14 GAIN (dB) RESPONSE (dB) 10 0 -10 12 10 -20 8 -30 6 0 4 8 12 16 20 2 24 4 6 8 FREQUENCY (GHz) S21 S11 S22 14 16 18 20 22 0 0 -10 -10 -20 +85 C -55 C Output Return Loss vs. Temperature RESPONSE (dB) RETURN LOSS (dB) 12 +25 C Input Return Loss vs. Temperature -20 -30 -30 -40 -40 2 4 6 8 10 12 14 16 18 20 2 22 4 6 8 +25 C 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +85 C -55 C +25 C +85 C -55 C Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 6 -10 5 NOISE FIGURE (dB) ISOLATION (dB) 10 FREQUENCY (GHz) -20 -30 -40 -50 Amplifiers - Low Noise Amplifiers - Chip 18 20 4 3 2 1 -60 0 -70 2 4 6 8 10 12 14 16 18 20 +85 C 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) +25 C 22 -55 C +25 C +85 C -55 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 22 20 20 18 18 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 22 14 12 14 12 10 10 8 8 6 6 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 FREQUENCY (GHz) +25 C +85 C -55 C 14 16 18 20 22 +85 C -55 C Psat vs. Vdd 22 22 20 20 18 18 16 16 Psat (dBm) P1dB (dBm) 12 +25 C 14 12 14 12 10 10 8 8 6 6 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 FREQUENCY (GHz) +4V 10 12 14 16 18 20 22 FREQUENCY (GHz) +5V +6V +4V Output IP3 vs. Temperature @ Pout = 4 dBm Tone +5V +6V Output IP3 vs. Vdd @ Pout = 4 dBm Tone 30 27 27 IP3 (dBm) 30 24 21 18 24 21 18 15 15 2 4 6 8 10 12 14 16 18 20 22 2 4 6 8 FREQUENCY (GHz) +25 C 3 10 FREQUENCY (GHz) P1dB vs. Vdd IP3 (dBm) Amplifiers - Low Noise Amplifiers - Chip P1dB vs. Temperature +85 C 10 12 14 16 18 20 22 FREQUENCY (GHz) -55 C +4V +5V +6V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Power Compression @ 4 GHz Power Compression @ 12 GHz 16 12 8 4 0 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 16 12 8 4 0 -15 7 -13 -11 -9 INPUT POWER (dBm) Pout Gain PAE -3 -1 1 3 5 7 Gain PAE Power Dissipation 0.6 POWER DISSIPATION (W) 20 Pout (dBm), GAIN (dB), PAE (%) -5 Pout Power Compression @ 20 GHz 16 12 8 4 0 -14 -7 INPUT POWER (dBm) -12 -10 -8 -6 -4 -2 0 2 4 0.5 0.4 0.3 0.2 0.1 0 -14 -12 -10 -8 INPUT POWER (dBm) Pout Gain -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) PAE 4 GHz 12 GHz 20 GHz Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Low Noise Amplifiers - Chip 20 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 20 4 HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Supply Current vs. Vdd Amplifiers - Low Noise Amplifiers - Chip Absolute Maximum Ratings Drain Bias Voltage (Vdd) +9 Vdc RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 24.4 mW/°C above 85 °C) Vdd (V) Idd (mA) +18 dBm 4 64 175 °C 5 66 6 68 2.2 W Thermal Resistance (channel to die bottom) 41 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C 70 8 72 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] For more information refer to the “Packaging Information” Document in the Product Support Section of our website . [2] For alternate packaging information contact Hittite Microwave Corporation. 5 7 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004” 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±0.002” Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms 2 Vdd Power supply voltage for teh amplifier External bypass capacitors are required 3 RFOUT This pad is AC coupled and matched to 50 Ohms Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Low Noise Amplifiers - Chip Pad Number 6 HMC462 v02.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Amplifiers - Low Noise Amplifiers - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work Thin Film Substrate surface temperature of 255 °C and a tool temperature of 265 °C. When Figure 2. hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible