HMC464LP5E

HMC464LP5E

  • 厂商:

    AD(亚德诺)

  • 封装:

    VFQFN32_EP

  • 描述:

    宽带功率放大器,采用SMT封装,2 - 20 GHZ

  • 数据手册
  • 价格&库存
HMC464LP5E 数据手册
HMC464LP5E v04.0218 LINEAR &POWER AMPLIFIERS -SMT GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC464LP5E is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military EW, ECM & C I Supply Voltage: +8V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 25 mm2 Leadless SMT Package Functional Diagram General Description 3 The HMC464LP5E is a GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm surface mount packages which operate between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5E ideal for EW, ECM and radar driver amplifiers as well as test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 2.0 - 6.0 12 14 Gain Flatness ±0.5 Gain Variation Over Temperature 0.025 Typ. Max. Min. 6.0 - 16.0 11.5 13.5 8 ±0.5 0.035 0.03 Typ. Max. GHz 11 dB ±1.0 0.04 Units 16.0 - 20.0 0.05 dB 0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB 21 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 23.5 26.5 22 25 18 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz 20 15 18 10 16 5 14 S21 S11 S22 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -40C 0 -30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 8 0 14 16 18 20 22 0 -5 -10 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 12 Output Return Loss vs. Temperature Input Return Loss vs. Temperature -15 -20 -10 -15 -20 -25 -30 -25 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 FREQUENCY (GHz) Gain & Return Loss @ Vdd= 5V, Vgg2= 2V, Idd= 160 mA Gain & Return Loss @ Vdd= 5V, Vgg2= 2V, Idd= 180 mA 20 20 15 15 10 10 5 RESPONSE (dB) RESPONSE (dB) 10 FREQUENCY (GHz) FREQUENCY (GHz) LINEAR &POWER AMPLIFIERS -SMT Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Gain & Return Loss S21 S11 S22 0 -5 -10 -15 5 -5 -10 -15 -20 -20 -25 -25 -30 S21 S11 S22 0 -30 0 2 4 6 8 10 12 FREQUENCY (GHz) 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Gain & Return Loss @ Vdd= 5V, Vgg2= 2V, Idd= 200 mA Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) 15 RESPONSE (dB) 10 5 S21 S11 S22 0 -5 -10 -15 -20 -10 -20 -30 -40 -50 +25C +85C -40C -60 -25 -30 -70 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 FREQUENCY (GHz) 12 28 11 14 16 18 20 22 16 18 20 22 10 NOISE FIGURE (dB) 26 24 22 20 18 +25C +85C -40C 16 14 +25C +85C -40C 9 8 7 6 5 4 3 2 12 1 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 FREQUENCY (GHz) 28 26 26 24 24 P1dB (dBm) 30 28 22 20 18 14 22 20 18 16 160 mA 180 mA 200 mA 14 12 P1dB vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=160mA 30 16 10 FREQUENCY (GHz) P1dB vs. Iddq @ Vdd=5V, Vgg2=2V P1dB (dBm) 12 Noise Figure vs. Temperature 30 0 +25C +85C -40C 14 12 12 10 10 0 2 4 6 8 10 12 FREQUENCY (GHz) 3 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) LINEAR &POWER AMPLIFIERS -SMT 20 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz 30 30 28 28 26 26 24 24 22 20 18 16 22 20 18 +25C +85C -40C 16 +25C +85C -40C 14 12 14 12 10 10 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) -9 -6 -3 0 3 6 16 18 20 9 12 15 20 22 26 24 Psat (dBm) Pout(dBm), GAIN(dB), PAE(%) 14 28 22 20 18 +25C +85C -40C 16 14 12 10 18 0 INPUT POWER (dBm) Pout 12 30 Idd (mA) 375 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -12 10 Psat vs. Temperature Power Compression at 10.9 GHz -15 8 FREQUENCY (GHz) Gain LINEAR &POWER AMPLIFIERS -SMT P1dB vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=200mA P1dB (dBm) P1dB (dBm) P1dB vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=180mA 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) PAE Idd Psat vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=160mA 30 30 28 28 26 26 24 24 Psat (dBm) Psat (dBm) Psat vs. Iddq @ Vdd=5V, Vgg2=2V 22 20 18 160mA 180mA 200mA 290mA 16 14 22 20 18 +25C +85C -40C 16 14 12 12 10 10 0 2 4 6 8 10 Vdd (V) 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz 30 28 28 26 26 24 24 Psat (dBm) Psat (dBm) Psat vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=200mA 30 22 20 18 +25C +85C -40C 16 22 20 18 +25C +85C -40C 16 14 14 12 12 10 10 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) 40 34 38 32 36 30 34 IP3 (dBm) 28 26 24 16 18 20 30 28 160 mA 180 mA 200 mA 22 16 20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 40 40 35 35 IP3 (dBm) 45 30 25 12 14 16 18 20 30 25 20 +25C +85C -40C 15 10 Output IP3 vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=180mA 45 20 8 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=160mA IP3 (dBm) 14 32 24 18 +25C +85C -40C 15 10 10 0 2 4 6 8 10 12 FREQUENCY (GHz) 5 12 26 +25C +85C -40C 20 10 Output IP3 vs. Iddq @ Vdd=5V, Vgg2=2V 36 22 8 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LINEAR &POWER AMPLIFIERS -SMT Psat vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=180mA 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Output IP3 vs. Temperature @ Vdd=5V, Vgg2=2V, Iddq=200mA Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg1 IP3 (dBm) 35 30 25 20 +25C +85C -40C 15 10 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +9 Vdc Gate Bias Voltage (Vgg1) -2 to 0 Vdc Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 51.5 mW/°C above 85 °C) 3.35 W Thermal Resistance (channel to ground paddle) 19.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 32 30 28 26 24 22 Gain P1dB Psat IP3 20 18 16 14 12 10 7.5 8 8.5 Vdd (V) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +7.5 292 +8.0 290 +8.5 288 LINEAR &POWER AMPLIFIERS -SMT 40 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 45 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz 32-Lead Lead Frame Chip Scale Package [LFCSP] 5 x 5 mm Body and 0.85 mm Package Height (HCP-32-1) Dimensions shown in millimeters Outline Drawing DETAIL A 5.10 5.00 SQ 4.90 0.30 0.25 0.18 PIN 1 INDICATOR AREA OPTIONS 1 24 0.50 BSC 3.80 3.70 SQ 3.60 EXPOSED PAD 17 TOP VIEW 0.90 0.85 0.80 0.45 0.40 0.35 8 16 9 0.20 MIN BOTTOM VIEW 3.50 REF 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF SEATING PLANE (SEE DETAIL A) 32 25 FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 03-09-2017-B PIN 1 INDICATOR PKG-004898 LINEAR &POWER AMPLIFIERS -SMT (JEDEC 95) COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-4. 32-Lead Lead Frame Chip Scale Package [LFCSP] 5 mm × 5 mm Body and 0.85 mm Package Height (HCP-32-1) Dimensions shown in millimeters. Package Information Part Number Package Body Material Lead Finish HMC464LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] H464 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Pin Descriptions Function Description 5 RFIN This pin is AC coupled and matched to 50 Ohms. 15 Vgg1 Gate Control for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA. 21 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 30 Vgg2 Control voltage for amplifier. +3V should be applied to Vgg2 for nominal operation. Ground Paddle GND Ground paddle must be connected to RF/DC ground. 1 - 4, 6 - 14, 16 - 20, 22 - 29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic Application Circuit LINEAR &POWER AMPLIFIERS -SMT Pin Number NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8 HMC464LP5E v04.0218 GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz LINEAR &POWER AMPLIFIERS -SMT Evaluation PCB List of Materials for Evaluation PCB 108344 Item Description J1, J2 PCB Mount SMA Connector J3, J4 2 mm Molex Header C1, C2 100 pF Capacitor, 0402 Pkg. C3, C4 1000 pF Capacitor, 0603 Pkg. C5, C6 4.7 µF Capacitor, Tantalum U1 HMC464LP5E PCB [2] 109762 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 9 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Analog Devices upon request. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
HMC464LP5E 价格&库存

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