HMC517
v03.0917
LOW NOISE AMPLIFIERS - CHIP
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
Typical Applications
Features
The HMC517 is ideal for use as a LNA or Driver amplifier for:
Noise Figure: 2.2 dB
• Point-to-Point Radios
OIP3: +24 dBm
• Point-to-Multi-Point Radios & VSAT
Single Supply: +3V @ 65 mA
• Test Equipment and Sensors
50 Ohm Matched Input/Output
• Military & Space
Die Size: 2.14 x 1.32 x 0.1 mm
Functional Diagram
General Description
Gain: 19 dB
The HMC517 chip is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) which
covers the 17 to 26 GHz frequency range. The
HMC517 provides 19 dB of small signal gain, 2.2 dB
of noise figure and has an output IP3 greater than
+24 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Min.
Frequency Range
Gain
16
Gain Variation Over Temperature
Max.
Min.
Typ.
Max.
22 - 26
19
15
Units
GHz
18
dB
0.015
0.025
0.015
0.025
dB/ °C
Noise Figure
2.2
2.7
2.4
2.9
dB
Input Return Loss
17
15
Output Return Loss
10
10
dB
12.5
dBm
15
dBm
Output Power for 1 dB Compression (P1dB)
1
Typ.
17 - 22
8
11
Saturated Output Power (Psat)
15
Output Third Order Intercept (IP3)
23
Supply Current (Idd)(Vdd = +3V)
65
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
9.5
dB
24
88
65
dBm
88
mA
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
22
20
S21
S11
S22
5
GAIN (dB)
RESPONSE (dB)
15
-5
18
16
+25C
+85C
-55C
14
-15
12
-25
10
12
16
20
24
28
32
16
18
FREQUENCY (GHz)
24
26
28
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
+25C
+85C
-55C
-4
RETURN LOSS
-5
RETURN LOSS
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-20
-8
-12
-16
-25
-20
16
18
20
22
24
26
28
16
18
FREQUENCY (GHz)
20
22
24
26
28
FREQUENCY (GHz)
Noise Figure vs. Temperature
Output IP3 vs. Temperature
30
10
25
8
20
+25C
+85C
-55C
6
IP3 (dBm)
NOISE FIGURE (dB)
20
LOW NOISE AMPLIFIERS - CHIP
24
4
+25C
+85C
-55C
15
10
2
5
0
0
16
18
20
22
FREQUENCY (GHz)
24
26
16
18
20
22
24
26
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2
HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
20
16
16
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature
20
12
8
+25C
+85C
-55C
4
12
+25C
+85C
-55C
8
4
0
0
16
18
20
22
24
26
16
18
20
FREQUENCY (GHz)
Pout (dBm), GAIN (dB), PAE (%)
-10
+25C
+85C
-55C
-30
-40
-50
-60
16
18
20
22
24
24
26
Power Compression @ 21 GHz
0
-20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
ISOLATION (dB)
LOW NOISE AMPLIFIERS - CHIP
P1dB vs. Temperature
26
28
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-24
Pout
Gain
PAE
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
FREQUENCY (GHz)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
2.5
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Gain
Noise Figure
P1dB
2.75
3
3.25
NOISE FIGURE (dB)
GAIN (dB), P1dB (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 21 GHz
3.5
Vdd (V)
3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
+2 dBm
+2.5
61
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 18 mW/°C above 85 °C)
1.65 W
Thermal Resistance
(channel to die bottom)
54.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
+3.0
65
+3.5
69
Note: Amplifier will operate over full voltage ranges shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Analog
Devices, Inc.
LOW NOISE AMPLIFIERS - CHIP
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
4
HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
LOW NOISE AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 µF are required.
5
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
6, 7, 8
Vgg3, Vgg2, Vgg1
These pads must be connected
to RF/DC ground for proper operation.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
Note: Vgg1, Vgg2 and Vgg3 must be connected to RF/DC ground.
5
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
3 mil Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm
to 0.152 mm (3 to 6 mils). Gold ribbon of 0.075 mm (3 mils) width and minimum
< 0.31 mm (
