HMC576-SX

HMC576 v00.0506 FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Applications Features The HMC576 is suitable for: High Output Power: +17 dBm • Clock Generation Applications: SONET OC-192 & SDH STM-64 Low Input Power Drive: -2 to +6 dBm • Point-to-Point & VSAT Radios Fo Isolation: >20 dBc @ Fout= 24 GHz 100 KHz SSB Phase Noise: -132 dBc/Hz • Test Instrumentation Single Supply: +5V@ 82 mA • Military EW / Radar Die Size: 1.18 x 1.23 x 0.1 mm • Space Functional Diagram General Description The HMC576 die is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology. When driven by a +3 dBm signal, the multiplier provides +17 dBm typical output power from 18 to 29 GHz. The Fo and 3Fo isolations are >20 dBc and >30 dBc respectively at 24 GHz. The HMC576 is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level Parameter Min. Frequency Range, Input Frequency Range, Output Output Power 11 Max. Units GHz 18 - 29 GHz 17 dBm Fo Isolation (with respect to output level) 20 dBc 3Fo Isolation (with respect to output level) 17 dBc Input Return Loss 10 dB Output Return Loss SSB Phase Noise (100 kHz Offset) Supply Current (Idd1 & Idd2) 2 - 44 Typ. 9.0 - 14.5 9 dB -132 dBc/Hz 82 mA For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Output Power vs. Drive Level 20 25 18 20 16 15 14 12 10 +25C +85C -55C 8 6 4 2 10 5 0 -5 -10 -15 -6dBm -4dBm -2dBm 0dBm -20 2 -25 0 2dBm 4dBm 6dBm -30 17 18 19 20 21 22 23 24 25 26 27 28 29 30 17 18 19 20 OUTPUT FREQUENCY (GHz) 21 22 23 24 25 26 27 28 29 30 28 29 30 OUTPUT FREQUENCY (GHz) Output Power vs. Supply Voltage @ 3 dBm Drive Level Isolation @ 3 dBm Drive Level 20 20 16 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 18 14 12 10 4.5V 5.0V 5.5V 8 6 4 10 0 -10 Fo 2Fo 3Fo -20 2 0 -30 17 18 19 20 21 22 23 24 25 26 27 28 29 17 30 18 19 20 OUTPUT FREQUENCY (GHz) 21 22 23 24 25 26 27 OUTPUT FREQUENCY (GHz) Output Power vs. Input Power 20 FREQUENCY MULTIPLIERS - ACTIVE - CHIP OUTPUT POWER (dBm) OUTPUT POWER (dBm) Output Power vs. Temperature @ 3 dBm Drive Level OUTPUT POWER (dBm) 15 10 5 0 -5 18GHz 24GHz 29GHz -10 -15 -20 -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 2 - 45 HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Input Return Loss vs. Temperature 2 - 46 0 0 +25C +85C -55C -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 Output Return Loss vs. Temperature -10 -15 -20 -25 -2 -4 -6 -8 -10 -12 -14 -16 +25C +85C -55C -18 -30 -20 8 9 10 11 12 13 14 15 FREQUENCY (GHz) 17 18 19 20 21 22 23 24 25 26 27 28 29 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Supply Current vs. Vdd RF Input (Vdd = +5V) +20 dBm Vdd (V) Idd (mA) Supply Voltage (Vdd1, Vdd2) +6.0 Vdc 4.5 82 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 7.9 mW/°C above 85 °C) 709 mW Thermal Resistance (channel to die bottom) 126 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 5.0 82 5.5 83 Note: Multiplier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate [2] GP-2 (Gel Pack) — [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging. 2 FREQUENCY MULTIPLIERS - ACTIVE - CHIP Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE. 4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER. 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 2 - 47 HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Pad Description FREQUENCY MULTIPLIERS - ACTIVE - CHIP 2 2 - 48 Pad Number Function Description 1, 2 Vdd1, Vdd2 Supply voltage 5V ± 0.5V. 3 RFOUT Pin is AC coupled and matched to 50 Ohms from 18 - 29 GHz. 4, 5 GND Die bottom must be connected to RF ground. 6 RFIN Pin is AC coupled and matched to 50 Ohms from 9 - 14.5 GHz. Interface Schematic Assembly Diagram For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC576 v00.0506 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length