HMC5805ALS6
v02.0517
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Typical Applications
Features
The HMC5805ALS6 is ideal for:
High P1dB Output Power: 24.5 dBm
• Test Instrumentation
High Psat Output Power: 27 dBm
• Microwave Radio & VSAT
Gain: 11.5 dB
• Military & Space
Output IP3: 29 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 175 mA
• Fiber Optics
16 Lead Ceramic 6x6 mm SMT Package: 36 mm2
Functional Diagram
General Description
The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 11.5 dB of gain,
29 dBm output IP3 and +24 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805ALS6 is ideal for EW,
ECM, Radar and test equipment applications. The
HMC5805ALS6 amplifier I/Os are internally matched
to 50 Ohms and the 6x6 mm SMT package is well
suited for automated assembly techniques.
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
DC - 5
9
12.5
Typ.
5 - 30
9
Max.
Min.
Typ.
Max.
Units
30 - 40
GHz
dB
11.5
11.5
Gain Flatness
±1.0
±0.75
±0.75
dB
Gain Variation Over Temperature
0.01
0.02
0.025
dB/ °C
dB
Input Return Loss
17
11
11
Output Return Loss
18
13
9
dB
24.5
23
dBm
27
27
26
dBm
Output Third Order Intercept (IP3)
34
29
26
dBm
Noise Figure
4.5
4
7
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
19
25
18
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Gain vs. Temperature
20
20
15
18
16
RESPONSE (dB)
10
14
GAIN (dB)
5
0
-5
12
10
8
6
-10
4
-15
2
0
-20
0
5
10
15
20
25
30
35
40
45
0
50
5
10
15
S21
S11
+25C
S22
Input Return Loss vs. Temperature
25
30
35
40
+85C
-40C
Output Return Loss vs. Temperature
0
0
-2
-2
-4
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
20
FREQUENCY (GHz)
FREQUENCY (GHz)
-6
-8
-10
-12
-14
-6
-8
-10
-12
-14
-16
-16
-18
-18
-20
-20
0
5
10
15
20
25
30
35
40
0
4
8
12
FREQUENCY (GHz)
+25C
16
20
24
28
32
36
40
FREQUENCY (GHz)
+85C
+25C
-40C
+85C
-40C
AMPLIFIERS - LINEAR & POWER - SMT
Gain & Return Loss
P1dB vs. Temperature
Noise Figure vs. Temperature
10
30
28
26
P1dB (dBm)
NOISE FIGURE(dB)
8
6
4
24
22
20
2
18
16
0
0
4
8
12
16
20
24
28
32
36
+85C
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
+25C
40
-40C
+25C
+85C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Psat vs. Temperature
30
28
28
26
26
Psat (dBm)
P1dB (dBm)
30
24
22
24
22
20
20
18
18
16
16
0
5
10
15
20
25
30
35
40
0
5
10
15
FREQUENCY (GHz)
+8V
20
25
30
35
40
FREQUENCY (GHz)
+10V
+11V
+25C
Psat vs. Supply Voltage
+85C
-40C
P1dB vs. Supply Current
30
30
28
28
26
26
P1dB (dBm)
Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
P1dB vs. Supply Voltage
24
22
24
22
20
20
18
18
16
16
0
5
10
15
20
25
30
35
40
0
4
8
12
FREQUENCY (GHz)
+8V
16
20
24
28
32
36
40
FREQUENCY (GHz)
+10V
+11V
125 mA
175 mA
Output IP3 vs.
Temperature
@ Pout=12 dBm / Tone
40
Psat vs. Supply Current
30
28
36
IP3 (dBm)
Psat (dBm)
26
24
22
32
28
20
24
18
20
16
0
4
8
12
16
20
24
28
32
36
40
0
5
10
125 mA
3
15
20
25
30
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
175 mA
+25C
+85C
-40C
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Output IP3 vs. Supply Voltage
@ Pout=12 dBm / Tone
Output IM3 @ Vdd=+8V
40
80
AMPLIFIERS - LINEAR & POWER - SMT
70
36
IM3 (dBc)
IP3 (dBm)
60
32
28
50
40
30
20
24
10
20
0
0
5
10
15
20
25
30
35
40
0
2
4
6
FREQUENCY (GHz)
+8V
+10V
12
14
16
24GHz
28GHz
30GHz
Output IM3 @ Vdd=+11V
80
80
70
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
10
2GHz
8GHz
14GHz
20GHz
+11V
Output IM3 @ Vdd=+10V
40
30
40
30
20
20
10
10
0
0
0
2
4
6
8
10
12
14
16
0
2
4
6
Pout/TONE (dBm)
8
10
12
14
16
Pout/TONE (dBm)
2 GHz
8 GHz
14 GHz
20 GHz
24 GHz
28 GHz
30 GHz
2 GHz
8 GHz
14 GHz
20 GHz
Reverse Isolation vs. Temperature
24 GHz
28 GHz
30 GHz
Power Compression @ 20GHz
230
-10
24
220
20
210
16
200
12
190
8
180
4
170
Pout(dBm), GAIN(dB), PAE(%)
28
-30
-40
-50
-60
-70
-80
160
0
0
4
8
12
16
20
24
28
32
36
40
FREQUENCY (GHz)
+25C
+85C
44
Idd (mA)
0
-20
ISOLATION (dB)
8
Pout/TONE (dBm)
0
2
4
6
8
10
12
14
16
18
INPUT POWER (dBm)
-40C
Pout
Gain
PAE
Idd
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
4
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Gain and Power vs. Supply Voltage
Gain and Power vs. Supply Current
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
30
25
20
15
10
5
9
10
11
20
15
10
125
135
145
155
165
175
Idd (mA)
Vdd (V)
GAIN(dB)
P1dB(dBm)
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Psat(dBm)
Second Harmonics vs. Temperature @
Pout=14 dBm
Power Dissipation @ 85C
3
SECOND HARMONIC (dBc)
60
2
1
50
40
30
20
10
0
0
3
6
9
12
15
18
0
INPUT POWER (dBm)
0
4GHz
10GHz
4
8
12
+25C
20
24
+85C
-40C
Second Harmonics vs. Pout
60
60
50
50
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
16
FREQUENCY(GHz)
20GHz
30GHz
Second Harmonics vs. Vdd
@ Pout=14 dBm
40
30
20
10
0
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
+8V
5
25
5
8
POWER DISSIPATION (W)
AMPLIFIERS - LINEAR & POWER - SMT
30
+10V
0
4
8
12
16
20
24
FREQUENCY(GHz)
+11V
+4dBm
+6dBm
+8dBm
+10dBm
+12dBm
+14dBm
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Drain Bias Voltage (Vdd)
12V
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
Vdd (V)
Idd (mA)
-3 to 0 Vdc
+8
175
For Vdd = 12V, Vgg2 = 5.5V
Idd >145mA
+10
175
+11
175
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 175 mA.
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN)
22 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
2.89 W
(derate 32.2 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
31.1 °C/W
Storage Temperature
-65 to 150 °C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class1B Passed 500V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
16-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS]
Dimensions shown in millimeters.
Table 1. Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Option
Package Marking [1]
HMC5805ALS6
ALUMINA, WHITE
Gold over Nickel
MSL3
EP-16-2
H5805A
XXXX
HMC5805ALS6TR
ALUMINA, WHITE
Gold over Nickel
MSL3
EP-16-2
H5805A
XXXX
[1] 4-Digit lot number XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
6
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number
7
Function
Description
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
RFOUT & VDD
RF output for amplifier. Connect DC bias (VDD) network
to provide drain current (Idd). See application circuit
herein.
3
VGG2
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For normal
operation +3.5V should be applied to Vgg2.
6
RFIN
This pin is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
9
VGG1
Gate control 1 for amplifier. Attach bypass
capacitors per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
10
ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
11
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5, 7, 13, 15
GND
These pins and exposed ground paddle must be
connected to RF/DC ground.
4, 8, 12, 16
N/C
These pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
1, 2, 14
Interface Schematic
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Application Information
BIASING PROCEDURES:
DC bias must be applied to the drain via an RF choke/inductor connection to the RFOUT/VDD pin. Gate bias must be applied to
mended for ACG1-ACG4, as shown in the Application Circuit.
The recommended bias sequence during power-up is as follows:
1. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
2. Set VDD to 10.0 V. Because the lower FETs are pinched off, IDQ remains very low upon application of VDD.
3. Set VGG2 to 3.5 V.
3. Adjust VGG1 to be more positive until a quiescent drain current of 175 mA has been obtained.
4. Apply the RF input signal.
The recommended bias sequence during power-down is as follows:
1. Turn off the RF input signal.
2. Set VGG1 to −2.0 V to pinch off the channels of the lower FETs.
3. Set VGG2 to 0 V.
4. Set VDD to 0 V.
5. Set VGG1 to 0 V.
Power-up and power-down sequences may differ from the ones described, though care must always be taken to
ensure adherence to the values shown in the Absolute Maximum Ratings.
Unless otherwise noted, all measurements and data shown were taken using the typical application circuit as configured on our evaluation board. The bias conditions shown in the specifications section are the operating points recommended to optimize the overall performance. Operation using other bias conditions may provide performance that
differs from what is shown in this data sheet.
Application Circuit
AMPLIFIERS - LINEAR & POWER - SMT
VGG1 and VGG2. Capacitive bypassing is recommended for all of the DC bias pins and AC terminations to ground are recom-
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 250 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
8
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation EV1HMC5805ALS6
Item
Description
J1, J2
PCB Mount K Connectors, SRI
J5, J6
DC Pins
C3 - C5
100 pF Capacitors, 0402 Pkg.
C8 - C11
0.01 μF Capacitors, 0603 Pkg.
C13, C15, C16 , C18
4.7 μF Capacitors, Case A Pkg.
R2
Zero Ohm Resistor, 0402 Pkg.
U1
HMC5805ALS6 Amplifier
PCB [2]
128996 Evaluation PCB
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Analog Devices upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
9
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC5805ALS6
v02.0517
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
The HMC5805ALS6 is a GaAs, pHEMT, MMIC power amplifier. Its basic architecture is that of a cascode distributed
amplifier which allows for control of DC bias for a drain and two gates. The cascode distributed architecture uses a
fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected
to the drain of the lower FET. The fundamental cell is then duplicated several times, with a transmission line feeding the RFIN signal to the gates of the lower FETs and a separate transmission line interconnecting the drains of the
upper FETs and routing the amplified signal to the RFOUT/VDD pin. Additional circuit design techniques are used
around each cell to optimize the overall performance for broadband operation. The major benefit of this architecture
is that high performance is maintained across a bandwidth far greater than what a single instance of the fundamental cell would provide. Additionally, ACG1-ACG4 provide access to internal nodes which, when provided with the
recommended AC terminations to ground, ensure that the overall response remains flat across the widest possible
frequency range. A simplified Schematic of Architecture is shown in below.
Schematic of Architecture
ACG2
ACG1
T-Line
RFOUT/VDD
VGG2
AMPLIFIERS - LINEAR & POWER - SMT
Theory of Operation
T-Line
RFIN
VGG1
ACG4 ACG3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
10
