HMC5846LS6TR

HMC5846LS6 v01.0414 Features The HMC5846LS6 is ideal for: Saturated Output Power: 35.5 dBm @ 30% PAE • Point-to-Point Radios High Output IP3: 42.5 dBm • Point-to-Multi-Point Radios High Gain: 31 dB • VSAT & SATCOM DC Supply: +7V @ 1200 mA • Military & Space No External Matching Required TE Typical Applications General Description Functional Diagram LE The HMC5846LS6 is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated power detector which operates between 12 and 16 GHz. The HMC5846LS6 provides 31 dB of gain, 35.5 dBm of saturated output power, and 30% PAE from a +7V supply. The HMC5846LS6 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. B SO AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Electrical Specifications, TA = +25 °C O Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +7V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 26 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. 12 - 16 32.5 Max. Units GHz 31 dB 0.06 dB/ °C 10 dB 17 dB 34.5 dBm Saturated Output Power (Psat) 35.5 dBm Output Third Order Intercept (IP3)[2] 42.5 dBm Total Supply Current (Idd) 1200 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +7V @ 1200 mA, Pout / Tone = +22 dBm 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 40 30 GAIN (dB) RESPONSE (dB) 34 20 10 0 30 26 -10 TE 22 -20 -30 18 10 11 12 13 14 15 FREQUENCY (GHz) 17 18 12 13 S11 S22 0 15 16 17 +25C +85C -40C Output Return Loss vs. Temperature 0 -12 -16 -20 11 B SO -8 12 13 14 15 16 RETURN LOSS (dB) -5 -4 -10 -15 -20 -25 -30 17 11 12 13 FREQUENCY (GHz) +25C +85C 14 15 16 17 FREQUENCY (GHz) -40C +25C +85C -40C P1dB vs. Supply Voltage O P1dB vs. Temperature 38 38 36 36 34 34 P1dB (dBm) P1dB (dBm) 14 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 11 LE S21 16 AMPLIFIERS - LINEAR & POWER - SMT 38 32 32 30 30 28 28 26 26 12 13 14 15 16 12 13 +25C +85C 14 15 16 FREQUENCY (GHz) FREQUENCY (GHz) -40C 5V 6V 7V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 2 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz 38 36 36 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 38 34 32 30 34 32 TE 30 28 28 12 13 14 15 16 12 FREQUENCY (GHz) 13 +85C 5V -40C P1dB vs. Supply Current (Idd) 15 16 6V 7V Psat vs. Supply Current (Idd) 38 38 36 36 32 28 26 12 13 14 15 Psat(dBm) 34 B SO 34 30 32 30 28 26 16 12 13 FREQUENCY (GHz) 900mA 1000mA O 46 44 44 42 42 IP3 (dBm) 48 1100mA 1200mA 40 38 36 36 34 34 32 32 30 16 Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 46 38 15 900mA 1000mA 48 40 14 FREQUENCY (GHz) 1100mA 1200mA Output IP3 vs. Temperature, Pout/Tone = +22 dBm IP3 (dBm) 14 FREQUENCY (GHz) LE +25C P1dB (dBm) AMPLIFIERS - LINEAR & POWER - SMT Psat vs. Temperature 30 12 13 14 15 16 12 13 FREQUENCY (GHz) +25C +85C 14 15 16 FREQUENCY (GHz) -40C 900mA 1000mA 1100mA 1200mA [1] Footnote if needed 3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Output IM3 @ Vdd = +5V 48 80 46 70 44 60 IM3 (dBc) IP3 (dBm) 42 40 38 40 30 36 20 TE 34 10 32 30 0 12 13 14 15 16 10 FREQUENCY (GHz) 12 14 6V 7V Output IM3 @ Vdd = +6V 18 20 22 24 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz Output IM3 @ Vdd = +7V 80 80 70 70 40 30 20 10 0 10 B SO 50 12 14 16 18 20 22 IM3 (dBc) 60 60 50 40 30 20 10 0 10 24 12 14 12 GHz 13 GHz 14 GHz 15 GHz O Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 -6 -4 -2 0 Gain 24 14 GHz 15 GHz 16 GHz 2 4 6 8 35 30 25 20 15 10 5 0 -10 -8 -6 -4 INPUT POWER (dBm) Pout 22 40 35 -8 20 Power Compression @ 14 GHz 40 0 -10 18 12 GHz 13 GHz 16 GHz Power Compression @ 13 GHz 16 Pout/TONE (dBm) Pout/TONE (dBm) Pout (dBm), GAIN (dB), PAE (%) 16 Pout/TONE (dBm) LE 5V IM3 (dBc) 50 AMPLIFIERS - LINEAR & POWER - SMT Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm -2 0 2 4 6 8 10 INPUT POWER (dBm) PAE Pout Gain PAE Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 4 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Power Compression @ 15 GHz Detector Voltage Over Temperature 10 30 Vref-Vdet (V) 25 20 15 0.1 10 5 0.01 -8 -6 -4 -2 0 2 4 6 8 10 3 11 Gain 27 12.5GHz +25C 12.5GHz +85C 12.5GHz -55C PAE Reverse Isolation vs. Temperature 35 15.5GHz +25C 15.5GHz +85C 15.5GHz -55C Gain & Power vs. Supply Current @ 14 GHz -20 -30 -50 -60 -70 -80 -90 11 B SO -40 12 13 14 15 16 Gain (dB), P1dB (dBm), Psat (dBm) 40 0 -10 35 30 25 20 900 17 1000 +25C +85C 1100 1200 Idd (mA) FREQUENCY (GHz) Gain -40C P1dB Psat O Power Dissipation 45 10 9 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) 19 LE Pout -5 OUTPUT POWER (dBm) INPUT POWER (dBm) Gain & Power vs. Supply Voltage @ 14 GHz 40 35 30 25 8 7 6 5 4 3 2 1 20 5 5.5 6 6.5 7 Vdd (V) Gain 5 1 TE Pout (dBm), GAIN (dB), PAE (%) 35 0 -10 ISOLATION (dB) AMPLIFIERS - LINEAR & POWER - SMT 40 P1dB 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Psat Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Drain Bias Voltage (Vdd) +8V RF Input Power (RFIN) +24 dBm Channel Temperature 150 °C 150 °C Nominal Junction Temperature (T= 85 °C and Pin = 10 dBm) 90 °C Continuous Pdiss (T= 85 °C) (derate 133 mW/°C above 85 °C) 8.6 W Operating Temperature -55 to +85 °C Thermal Resistance (channel to ground paddle) 7.55 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Pass 250V TE Junction Temperature to Maintain 1 Million Hour MTTF LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS O B SO Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Reliability Information Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC5846LS6 ALUMINA WHITE Gold over Nickel N/A H5846 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 6 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Function Description 6 RFIN This Pin is DC coupled and matched to 50 Ohms over the operating frequency. 1-4 9, 10 Vdd4, Vdd3, Vdd2, Vdd1, Vdd5, Vdd6 Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pin followed by 0.01 μF capacitors and a 4.7 μF capacitors. 8 Vgg1 Gate controlled amplifier. External bypass capacitors of 100 pF are required followed by 0.01 μF capacitors and a 4.7 μF capacitors. 5, 7, 13, 15, 16 GND These Pins and Package bottom must be connected to RF/DC ground. 11 Vref DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. 12 Vdet DC voltage representing RF output rectified by diode which is biased through an external resistor. LE B SO 14 Interface Schematic TE Pad Number RFOUT This Pin is DC coupled and matched to 50 Ohms. Application Circuit O AMPLIFIERS - LINEAR & POWER - SMT Pin Descriptions 7 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz O List of Materials for Evaluation PCB EVAL01-HMC5846L56 Item Description J1, J2 PCB Mount K Connectors, SRI J5, J6 DC Pins C1 - C6, C20, C21, C23 100 pF Capacitors, 0402 Pkg. C7 - C12, C19, C25, C26 0.01 μF Capacitors, 0603 Pkg. C13 - C18, C29 - C31 4.7 μF Capacitors, Case A Pkg. R1 - R2 40.2 kOhm Resistor, 0402 Pkg. U1 HMC5846LS6 Amplifier PCB [2] 128996 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB AMPLIFIERS - LINEAR & POWER - SMT B SO LE TE Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of theirSupport: respective owners. Phone: 978-250-3343 or apps@hittite.com 8