HMC606
v05.0221
LOW NOISE AMPLIFIERS - CHIP
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Typical Applications
Features
The HMC606 is ideal for:
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
• Radar, EW & ECM
P1dB Output Power: +15 dBm
• Microwave Radio
Gain: 14 dB
• Test Instrumentation
Output IP3: +27 dBm
• Military & Space
Supply Voltage: +5V @ 64 mA
• Fiber Optic Systems
50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm
General Description
Functional Diagram
The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplifier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplifier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a significant improvement
over FET-based distributed amplifiers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply.
The HMC606 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50
Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V
Parameter
Min.
Frequency Range
Gain
11
Max.
Min.
Typ.
Max.
12 - 18
13
dB
dB
0.021
0.25
dB/ °C
Noise Figure
4.5
6.5
dB
Input Return Loss
20
22
dB
Output Return Loss
Output Power for 1 dB Compression (P1dB)
10
GHz
±1.0
Gain Variation Over Temperature
14.0
Units
±1.0
Gain Flatness
15
12
15
10
15
dB
13
dBm
dBm
Saturated Output Power (Psat)
18
15
Output Third Order Intercept (IP3)
27
22
dBm
Phase Noise @ 100 Hz
-140
-140
dBc/Hz
Phase Noise @ 1 kHz
-150
-150
dBc/Hz
Phase Noise @ 10 kHz
-160
-160
dBc/Hz
Phase Noise @ 1 MHz
-170
-170
dBc/Hz
Supply Current
1
Typ.
2 - 12
64
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
95
64
95
mA
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC606
v05.0221
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Gain & Return Loss
Gain vs. Temperature
18
16
14
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
10
-10
12
10
8
6
-20
+25C
+85C
-55C
4
2
-30
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
12
14
16
18
0
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
10
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-55C
-10
-15
-20
-25
+25C
+85C
-55C
-5
-10
-15
-20
-25
-30
-30
2
4
6
8
10
12
14
16
2
18
4
6
8
10
14
16
18
Noise Figure vs. Temperature
Power Compression
14
20
12
+25C
+85C
-55C
NOISE FIGURE (dB)
15
10
5
0
-5
-15
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Pout (dBm), Gain (dB), PAE (%)
8
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - CHIP
20
20
Output Power
Gain
PAE
10
8
6
4
2
0
-10
-5
0
Pin (dBm)
5
10
2
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2
HMC606
v05.0221
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
25
18
23
16
21
14
19
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature
20
12
10
8
+25C
+85C
-55C
6
4
15
13
+25C
+85C
-55C
9
7
0
2
4
6
8
10
12
14
16
5
18
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
FREQUENCY (GHz)
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 8 GHz,
RF Input Power = 12 dBm (Psat
Output IP3 vs. Temperature
-80
ADDITIVE PHASE NOISE (dBc/Hz)
35
30
25
20
+25C
+85C
-55C
15
10
5
2
4
6
8
10
12
FREQUENCY (GHz)
3
17
11
2
IP3 (dBm)
LOW NOISE AMPLIFIERS - CHIP
P1dB vs. Temperature
14
16
18
-90
-100
-110
-120
-130
-140
-150
-160
-170
-180
100
1K
10K
100K
1M
OFFSET FREQUENCY (Hz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC606
v05.0221
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Vdd1= Vdd2= 5V
7V
RF Input Power (RFIN)
+15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 14.6 mW/°C above 85 °C)
1.32 W
Thermal Resistance
(channel to die bottom)
68.37 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vcc1= Vcc2 (V)
Icc1 + Icc2 (mA)
+4.5
53
+5.0
64
+5.5
74
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Analog
Devices.
LOW NOISE AMPLIFIERS - CHIP
Typical Supply Current vs. Vcc1, Vcc2
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
4
HMC606
v05.0221
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
LOW NOISE AMPLIFIERS - CHIP
Pad Descriptions
5
Pad Number
Function
Description
1
RFIN
This Pad is AC coupled
and matched to 50 Ohms.
2, 4
Vcc1, Vcc2
Vcc1= Vcc2= 5V
3
RFOUT
This Pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
Assembly Diagram
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC606
v05.0221
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.150mm (0.005”) Thick
Moly Tab
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile
air bridges and should not be touched with vacuum collet, tweezers, or fingers.
LOW NOISE AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible
