HMC636ST89

HMC636ST89 / 636ST89E v02.0311 Typical Applications Features The HMC636ST89(E) is ideal for: Low Noise Figure: 2.2 dB • Cellular / PCS / 3G High P1dB Output Power: +22 dBm • WiMAX, WiBro, & Fixed Wireless High Output IP3: +40 dBm • CATV & Cable Modem Gain: 13 dB 9 • Microwave Radio 50 Ohm I/O’s - No External Matching Amplifiers - Linear & Power - SMT GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Functional Diagram Industry Standard SOT89 Package General Description The HMC636ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness. Electrical Specifications, Vs= 5.0 V, TA = +25° C Parameter Min Frequency Range Gain Typ. Max Min. 0.2 - 2.0 10 Gain Variation Over Temperature Input Return Loss Max. 2.0 - 4.0 13 0.01 Typ. 5 0.02 10 GHz 10 0.01 Units dB 0.02 dB/ °C 10 dB Output Return Loss 13 15 dB Reverse Isolation 22 20 dB Output Power for 1 dB Compression (P1dB) 19 22 20 23 dBm Output Third Order Intercept (IP3) 36 39 36 39 dBm Noise Figure 2.5 2 Supply Current (Icq) 155 155 dB 175 mA Note: Data taken with broadband bias tee on device output. 9-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Gain vs. Temperature 20 16 15 14 10 12 S21 S11 S22 0 -5 10 8 6 -10 4 -15 2 -20 0 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 2 3 4 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 9 +25C +85C -40C -10 +25C +85C -40C -15 -20 +25C +85C -40C -10 -15 -20 0 1 2 3 4 0 1 FREQUENCY (GHz) 2 3 4 3 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 +25C +85C -40C -5 -10 -15 +25C +85C -40C 7 Amplifiers - Linear & Power - SMT 5 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 6 5 4 3 2 -20 1 0 -25 0 1 2 FREQUENCY (GHz) 3 4 0 1 2 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz 25 25 20 20 Psat (dBm) 30 15 10 +25C +85C -40C 5 0 0 0 1 2 3 4 0 1 2 FREQUENCY (GHz) 28 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 24 20 16 12 8 4 0 Pout Gain PAE -4 -16 -12 -8 -4 0 4 8 12 20 16 12 8 4 0 -4 -8 -20 16 Pout Gain PAE 24 -16 -12 45 35 30 0 dBm + 5 dBm +10 dBm 20 FREQUENCY (GHz) 0 4 8 12 16 3 4 160 50 Is 140 120 40 100 30 Gain P1dB Psat OIP3 80 60 Is (mA) IP3 (dBm) 40 2 -4 Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 850 MHz Output IP3 vs. Input Tone Power 1 -8 INPUT POWER (dBm) INPUT POWER (dBm) 0 4 Power Compression @ 2200 MHz 28 -8 -20 3 FREQUENCY (GHz) Power Compression @ 850 MHz 25 9-3 15 10 +25C +85C -40C 5 Amplifiers - Linear & Power - SMT Psat vs. Temperature 30 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 9 P1dB (dBm) P1dB vs. Temperature 40 20 20 0 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Absolute Maximum Ratings +5.5 Volts RF Input Power (RFIN)(Vcc = +5 Vdc) +16 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 13.3 mW/°C above 85 °C) 0.86 W Thermal Resistance (Channel to lead) 75.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 9 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Amplifiers - Linear & Power - SMT Collector Bias Voltage (Vcc) Package Information Part Number Package Body Material Lead Finish MSL Rating HMC636ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC636ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H636 XXXX H636 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Pin Descriptions Pin Number Function Description 1 RFIN This pin is DC coupled. An off-chip DC blocking capacitor is required. 3 RFOUT RF Output and DC BIAS for the amplifier. See Application Circuit for off-chip components. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Amplifiers - Linear & Power - SMT 9 9-5 Interface Schematic Application Circuit Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Evaluation PCB List of Materials for Evaluation PCB 119394 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. U1 HMC636ST89(E) PCB [2] 119392 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Linear & Power - SMT 9 [2] Circuit Board Material: FR4 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 9-6