HMC637A

HMC637A v01.0715 AMPLIFIERS - LINEAR & POWER - CHIP GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz Typical Applications Features The HMC637A is ideal for: P1dB Output Power: +30.5 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm • Military & Space Bias Supplies: +12V, +6V, -1V • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 2.98 x 2.48 x 0.1 mm Functional Diagram General Description The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications. The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA[1] Frequency Min. Typ. Gain Parameter DC - 6.0 GHz 11 14 Gain Flatness DC - 6.0 GHz ±0.5 dB Gain Variation Over Temperature DC - 6.0 GHz 0.008 dB/ °C Units dB dB Input Return Loss DC - 6.0 GHz 14 Output Return Loss DC - 6.0 GHz 18 dB Output Power for 1 dB Compression (P1dB) DC - 6.0 GHz 30.5 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure [2] DC - 6.0 GHz 31.5 dBm DC - 6.0 GHz 43 dBm DC - 2 GHz 2.0 - 6.0 GHz 12 4 dB dB 400 mA Supply Current (Idd) 1 Max. [1] Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical. [2] Two-Tone Output Power = 0dBm Per Tone , 1 MHz Spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz Broadband Gain & Return Loss Gain vs. Temperature 16 14 GAIN (dB) RESPONSE (dB) 10 0 -10 12 10 8 6 4 -20 2 0 -30 0 2 4 6 0 8 2 4 S21 S11 +25 C S22 8 +85 C -55 C Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 0 2 4 6 8 0 2 4 FREQUENCY (GHz) +25 C 6 8 FREQUENCY (GHz) +85 C -55 C +25 C +85 C -55 C Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 24 -10 21 NOISE FIGURE (dB) ISOLATION (dB) 6 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP 18 20 -20 -30 -40 -50 -60 18 15 12 9 6 3 0 -70 0 2 4 6 8 0 2 +25 C +85 C 4 6 8 FREQUENCY (GHz) FREQUENCY (GHz) -55 C +25 C +85 C -55 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz 34 32 32 30 30 Psat (dBm) P1dB (dBm) Psat vs. Temperature 34 28 26 28 26 24 24 22 22 20 20 0 2 4 6 8 0 2 FREQUENCY (GHz) +25 C +85 C +85 C -55 C Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 55 50 45 40 35 30 25 20 2 4 +25 C 8 -55 C 6 8 45 40 35 30 25 20 15 10 11.5 12 FREQUENCY (GHz) +25C 6 Gain, Power & Output IP3 vs. Supply Voltage @ 3 GHz, Fixed Vgg 60 0 4 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) AMPLIFIERS - LINEAR & POWER - CHIP P1dB vs. Temperature 12.5 Vdd (V) +85C Gain P1dB -55C Psat IP3 Output IP3 vs. Output Tone Power 60 55 IP3 (dBm) 50 45 40 35 30 25 20 0 2 4 6 8 FREQUENCY (GHz) 0 dBm 3 10 dBm 20 dBm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz Drain Bias Voltage (Vdd) +14 Vdc Gate Bias Voltage (Vgg1) -3 to 0 Vdc Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +12V Vdc) Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 95 mW/°C above 85 °C) 5.6 W Thermal Resistance (channel to die bottom) 10.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1B Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 11.5 375 +4 to +7V 12.0 400 +25 dBm 12.5 430 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - LINEAR & POWER - CHIP Absolute Maximum Ratings 4 HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz AMPLIFIERS - LINEAR & POWER - CHIP Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz Pad Descriptions Function Description 1 IN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 Vgg2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +6V should be applied to Vgg2. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6, 7 ACG3, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 Vgg1 Gate control 1 for amplifier. Attach bypass capacitors per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - LINEAR & POWER - CHIP Pad Number 6 HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz AMPLIFIERS - LINEAR & POWER - CHIP Application Circuit 7 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA Assembly Diagram Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637A v01.0715 GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnished by Analog Devices is believed to be accurate and reliable. However, no For 2price, delivery, and toChelmsford, place orders: Analog Devices, Inc., Forisprice, and for toitsplace Analog Devices, Elizabeth Drive, MA 01824 responsibility assumeddelivery by Analog Devices use, nor orders: for any infringements of patents or otherInc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 • Fax: 978-250-3373 • Order at www.hittite.com Phone:On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 8