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HMC669LP3

HMC669LP3

  • 厂商:

    AD(亚德诺)

  • 封装:

    VFQFN16_EP

  • 描述:

    IC MMIC AMP LNA BYPASS 16-QFN

  • 数据手册
  • 价格&库存
HMC669LP3 数据手册
HMC669LP3 / 669LP3E v04.0709 Typical Applications Features The HMC669LP3(E) is ideal for: Noise Figure: 1.4 dB • Cellular/3G and LTE/WiMAX/4G Output IP3: +29 dBm • BTS & Infrastructure Gain: 17 dB • Repeaters and Femtocells Failsafe Operation: Bypass is enabled when LNA is unpowered • Tower Mounted Amplifiers Single Supply: +3V or +5V TE • Test & Measurement Equipment 16 Lead 3x3mm QFN Package: 9 mm 2 Functional Diagram General Description LE The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. Failsafe topology also enables the LNA bidirectional bypass path when no DC power is available. B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Electrical Specifications, TA = +25° C, Rbias = 15 Ohm LNA Mode Parameter Vdd = +3V Min. O Frequency Range Gain Gain Variation Over Temperature Typ. Max. Min. 1.7 - 2.2 12 Bypass Mode Vdd = +5V Typ. Max. Min. 1.7 - 2.2 15 14 0.015 Min. -3 -2.1 Typ. 1.7 - 2.2 -3 Units Max. GHz -2.1 dB 0.0008 0.0008 dB / °C Noise Figure 1.4 Input Return Loss 10 11 12 12 dB Output Return Loss 13 13 12 12 dB Reverse Isolation 28 30 - - dB 11.5 12 21 24 dBm Power for 1dB Compression (P1dB)[1] Third Order Intercept (IP3)[2] 25 Supply Current (Idd) 49 1.4 Max. 1.7 - 2.2 17 0.014 1.65 Typ. Failsafe Mode 1.65 29 59 86 105 dB 25 25 dBm 0.04 - mA 80 - ns ns Switching Speed LNA Mode to Bypass Mode Bypass Mode to LNA Mode 100 100 [1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN. [2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN. 7-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz LNA - Broadband Gain & Return Loss 25 S21 20 10 Vdd=5V Vdd=3V 0 GAIN (dB) 18 5 S22 -5 -10 TE S11 -20 +25C +85C -40C 12 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) LNA - Gain vs. Temperature [2] +25C +85C -40C 20 12 10 1.6 10 1.6 3 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 Input Return Loss -10 -15 -30 1.6 2.3 O IP3 (dBm) 1.2 1 0.4 [1] Vdd = 5V 1.9 2 2.1 FREQUENCY (GHz) [2] Vdd = 3V 2.2 2.3 26 22 18 Vdd=5V Vdd=3V 1.8 1.9 2 2.1 FREQUENCY (GHz) Vdd=5V 1.4 1.7 1.8 30 1.6 1.6 1.7 34 +25C -40C +25C +85C -40C LNA - Output IP3 vs. Temperature, Output Power @ 0 dBm +85C 0.8 Output Return Loss -20 -25 2 0.6 1.8 -5 LNA - Noise Figure vs. Temperature [3] 1.8 1.7 LNA - Return Loss vs. Temperature [1] B SO 18 14 2.8 0 22 16 2.6 LE -30 0.8 GAIN (dB) 16 14 -15 RETURN LOSS (dB) RESPONSE (dB) 15 Amplifiers - Low Noise - SMT 22 20 NOISE FIGURE (dB) 7 LNA - Gain vs. Temperature [1] 2.2 2.3 14 1.6 Vdd=3V 1.7 1.8 +25C +85C -40C 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [3] Measurement reference plane shown on evaluation PCB drawing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 HMC669LP3 / 669LP3E v04.0709 7 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz LNA - Output P1dB vs. Temperature [1] LNA - Output P1dB vs. Temperature [2] 16 18 14 12 P1dB (dBm) 14 12 10 8 2 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2 1.6 2.3 Gain 1.9 2 2.1 FREQUENCY (GHz) 45 18 41 16 B SO 33 29 IP3 75 80 25 85 90 30 26 10 22 8 40 45 O GAIN (dB) & P1dB (dBm) ISOLATION (dB) [1] Vdd = 5V 7-3 1.8 1.9 2 2.1 FREQUENCY (GHz) [2] Vdd = 3V 2.2 2.3 2 1.8 P1dB Gain 16 1.6 14 1.4 12 1.2 10 NOISE FIGURE (dB) -35 55 LNA - Output P1dB, Gain & Noise Figure [3] vs. Vdd @ 1900 MHz 18 -30 50 Idd (mA) -15 -25 34 IP3 20 +25C +85C -40C 38 P1dB 12 -10 -20 42 14 95 LNA - Reverse Isolation vs. Temperature [1] 1.7 2.3 Gain Idd (mA) -40 1.6 2.2 LNA - Gain, P1dB, Output IP3 vs. Current [2] @ 1900 MHz 37 P1dB 70 1.8 LE 16 8 1.7 IP3 (dBm) GAIN (dB) , P1dB (dBm) 18 10 +25C +85C -40C 4 LNA - Gain, P1dB, Output IP3 vs. Current [1] @ 1900 MHz 12 8 TE +25C +85C -40C 4 14 10 6 6 GAIN (dB) , P1dB (dBm) P1dB (dBm) 16 IP3 (dBm) Amplifiers - Low Noise - SMT 20 1 NF 0.8 8 3 3.5 4 4.5 5 Voltage Supply (V) [3] Measurement reference plane shown on evaluation PCB drawing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Bypass Mode Broadband Gain & Return Loss Bypass Mode Input IP3 vs. Output Power @ 1900 MHz -2 IP3 (dBm) S21 S11 S22 -8 -12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 5 Pout (dBm) 10 15 Bypass Mode Insertion Loss vs. Temperature B SO -1 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 O -2 -3 -5 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Bypass Mode Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) -5 +25C +85C -40C -4 2.3 Bypass Mode Input Return Loss vs. Temperature RETURN LOSS (dB) 0 LE +25C +85C -40C 28 -10 -15 -20 1.6 -5 0 32 IP3 (dBm) 15 -10 3 Bypass Mode - Input IP3 vs. Temperature, Output Power @ 5 dBm 16 1.6 25 20 -14 20 30 TE -10 GAIN (dB) RESPONSE (dB) -6 24 +25C +85C -40C 35 -4 Amplifiers - Low Noise - SMT 40 0 -16 0.8 7 -10 -15 -20 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC669LP3 / 669LP3E v04.0709 7 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Failsafe Mode Broadband Gain & Return Loss Failsafe Mode Input IP3 vs. Output Power @ 1900 MHz 40 -2 IP3 (dBm) S21 S11 S22 -8 -12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 B SO -1 10 15 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 O -2 -3 -5 1.6 2.3 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Failsafe Mode Output Return Loss vs. Temperature 0 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) -5 +25C +85C -40C -4 0 RETURN LOSS (dB) 5 Pout (dBm) Failsafe Mode Insertion Loss vs. Temperature Failsafe Mode Input Return Loss vs. Temperature 7-5 0 LE +25C +85C -40C 28 -10 -15 -20 1.6 -5 0 32 16 1.6 15 -10 3 Failsafe Mode - Input IP3 vs. Temperature, Output Power @ 5 dBm 20 25 20 -14 24 30 TE -10 GAIN (dB) RESPONSE (dB) -6 -16 0.8 +25C +85C -40C 35 -4 IP3 (dBm) Amplifiers - Low Noise - SMT 0 -10 -15 -20 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 Vdc Control Voltage (Vctl) +6 Vdc RF Input Power (RFIN) +5 dBm +20 dBm Channel Temperature Continuous Pdiss (T = 85 °C) (derate 10.71 mW/°C above 85 °C) Rbias Ω 150 °C Vdd= 5V 0 55 95 15 49 86 41 73 28 50 47 180 0.70 W Idd (mA) Vdd= 3V [1] [1] Recommended maximum Rbias 93.33 °C/W Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C ESD Sensitivity (HBM) Class 1A Truth Table LNA Mode Vctl = Vdd = 3 to 5V Bypass Mode Vctl= 0V, Vdd = 3 to 5V Failsafe Mode Vctl = Vdd = N/C LE Thermal Resistance (channel to ground paddle) TE LNA Mode Bypass / Fail safe Mode 7 Typical Supply Current vs. Vdd O B SO ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Amplifiers - Low Noise - SMT v04.0709 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC669LP3 / 669LP3E v04.0709 LE TE Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Package Body Material Lead Finish HMC669LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 100% matte Sn MSL1 [2] O Part Number HMC669LP3E RoHS-compliant Low Stress Injection Molded Plastic MSL Rating Package Marking [3] 669 XXXX 669 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz Description 1, 2, 5, 8, 11, 12, 13, 15 N/C These pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 3 RFIN This pin is DC coupled. Off-chip DC blocking capacitor required. 4, 9 GND These pins and the exposed ground paddle must be connected to RF/DC ground. 6 ACG AC Ground. Attach bypass capacitor per application circuit. 7 RES External resistor pin for current control. See table for external resistor value vs. bias current data. 10 14 LE RFOUT This pin is matched to 50 Ohms Vdd Power Supply voltage pin. External bypass capacitors required. Vctl Control voltage pin for LNA / Bypass Modes. Setting voltage equal to VDD enables LNA Mode. External Bypass capacitor required. O 16 Interface Schematic TE Function B SO Pin Number Amplifiers - Low Noise - SMT 7 Pin Descriptions Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 HMC669LP3 / 669LP3E v04.0709 B SO LE TE Application Circuit O Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 7-9 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz TE LE B SO Amplifiers - Low Noise - SMT 7 Evaluation PCB O List of Materials for Evaluation PCB 121923 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 82 pF Capacitor, 0402 Pkg. C2 8200 pF Capacitor, 0402 Pkg. C3 10 nF Capacitor, 0603 Pkg. C4 1 µF Capacitor, 0603 Pkg. C5 100 pF Capacitor, 0603 Pkg. R1 15 Ohm Resistor, 0402 Pkg. R2 0 Ohm Resistor, 0402 Pkg. U1 HMC669LP3(E) Amplifier PCB [2] 118911 Evaluation Board The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10
HMC669LP3 价格&库存

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