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HMC715LP3ETR

HMC715LP3ETR

  • 厂商:

    AD(亚德诺)

  • 封装:

    VFQFN16_EP

  • 描述:

    RF Amplifier IC LTE, WiMax 2.1GHz ~ 2.9GHz 16-QFN (3x3)

  • 数据手册
  • 价格&库存
HMC715LP3ETR 数据手册
HMC715LP3 / 715LP3E v01.0808 Typical Applications Features The HMC715LP3(E) is ideal for: Noise Figure: 0.9 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure Output IP3: +33 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 TE • Access Points Functional Diagram General Description LE The HMC715LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 2.1 and 2.9 GHz. The amplifier has been optimized to provide 0.9 dB noise figure, 19 dB gain and +33 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC715LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Electrical Specifications O TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1] Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 2.1 - 2.9 14.5 Gain Variation Over Temperature Vdd = +5V Typ. Max. Min. 2.3 - 2.7 18 15 0.01 Min. 15.5 16.5 MHz 19 dB 0.01 dB/ °C 0.9 11.5 11 11.5 11 dB 14 13.5 12.5 12 dB 19.5 dBm 10.5 14.5 12.5 15 15 1.2 Units Noise Figure Output Power for 1 dB Compression (P1dB) 0.9 Max. 2.3 - 2.7 19 0.01 1.2 Typ. Input Return Loss Output Return Loss 0.9 Max. 2.1 - 2.9 18 0.01 1.2 Typ. 19 0.9 16.5 1.2 dB Saturated Output Power (Psat) 16 16.5 20 20.5 dBm Output Third Order Intercept (IP3) 28 28.5 33 33.5 dBm Supply Current (Idd) 47 65 47 65 95 126 95 126 mA [1] Rbias resistor sets current, see application circuit herein 7-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Broadband Gain & Return Loss [1] [2] 30 S11 0 GAIN (dB) 6 S22 -6 -12 20 18 +25C +85C -40C TE 16 5V 3V -24 12 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 5 2 2.2 Gain vs. Temperature [2] 2.8 3 Input Return Loss vs. Temperature [1] 26 0 24 +25C +85C -40C 20 18 16 14 2 B SO 22 2.2 2.4 2.6 2.8 -10 -15 -20 3 O Output Return Loss vs. Temperature [1] 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Reverse Isolation vs. Temperature [1] -20 0 -25 +25C +85C -40C ISOLATION (dB) -5 +25C +85C -40C -5 FREQUENCY (GHz) RETURN LOSS (dB) 2.4 2.6 FREQUENCY (GHz) LE -30 0.5 14 RETURN LOSS (dB) RESPONSE (dB) 22 12 -18 GAIN (dB) 24 S21 18 Amplifiers - Low Noise - SMT 26 24 12 7 Gain vs. Temperature [1] -10 -30 -35 +25C +85C -40C -40 -15 -45 -50 -20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 [1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 47kΩ Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 HMC715LP3 / 715LP3E v01.0808 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 23 +85C 21 +25C Vdd=5V 19 P1dB (dBm) 1.2 0.9 0.6 +25C +85C -40C 11 0 9 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 LE 2 Psat vs. Temperature [1] [2] Output IP3 vs. Temperature [1] [2] 24 44 41 22 Vdd=5V 18 16 14 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 29 Vdd=3V 20 3 O Output IP3 and Supply Current vs. Supply Voltage @ 2300 MHz [3] Vdd=5V 32 23 Vdd=3V 2 35 26 +25C +85C -40C 10 +25C +85C -40C 38 B SO 20 2 2.2 2.4 2.6 FREQUENCY (GHz) 2.8 3 Output IP3 and Supply Current vs. Supply Voltage @ 2700 MHz [3] 38 125 34 110 36 110 32 95 34 95 30 80 32 80 28 65 30 65 Idd IP3 26 50 IP3 (dBm) 125 Idd IP3 28 50 24 35 26 35 22 20 24 20 20 5 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 47kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 47kΩ for Vdd = 3V 2.7 Idd (mA) 36 Idd (mA) IP3 (dBm) Vdd=3V 15 TE -40C Vdd=5V Vdd=3V 12 7-3 17 13 0.3 IP3 (dBm) NOISE FIGURE (dB) 1.5 Psat (dBm) Amplifiers - Low Noise - SMT 1.8 5 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [4] Measurement reference plane shown on evaluation PCB drawing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Pout (dBm), Gain (dB), PAE (%) 15 10 0 Pout Gain PAE -5 -16 -14 -12 -10 -8 -6 -4 INPUT POWER (dBm) -2 0 20 -10 -20 Pout Gain PAE -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 4 O 1.4 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 1.2 18 1.1 16 1 14 0.9 12 0.8 0.6 8 3.9 10 5 0 Pout Gain PAE -5 -15 -10 -5 INPUT POWER (dBm) 0 5 1.3 4.3 20 1.2 P1dB Gain 18 1.1 16 1 14 0.9 0.7 NF 3.5 15 4.7 5.1 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 47kΩ NOISE FIGURE (dB) 20 3.1 20 1.3 P1dB Gain 10 25 22 NOISE FIGURE (dB) GAIN (dB) & P1dB (dBm) -5 Gain, Power & Noise Figure vs. Supply Voltage @ 2700 MHz [3] 24 2.7 Pout Gain PAE -10 -20 7 Gain, Power & Noise Figure vs. Supply Voltage @ 2300 MHz [3] 22 Pout (dBm), Gain (dB), PAE (%) 25 -5 0 30 30 0 5 Power Compression @ 2700 MHz [2] B SO Pout (dBm), Gain (dB), PAE (%) 35 5 10 -10 -20 2 Power Compression @ 2700 MHz [1] 10 15 LE -10 -20 -18 20 TE 5 GAIN (dB) & P1dB (dBm) Pout (dBm), Gain (dB), PAE (%) 20 Amplifiers - Low Noise - SMT 25 25 15 7 Power Compression @ 2300 MHz [2] Power Compression @ 2300 MHz [1] NF 0.8 12 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 47kΩ for Vdd = 3V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC715LP3 / 715LP3E v01.0808 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Gain, Noise Figure & Rbias @ 2300 MHz Output IP3 vs. Rbias @ 2300 MHz GAIN (dB) 29 23 20 100 Vdd=3V Vdd=5V 1000 10000 26 23 100 10000 0.95 14 0.9 12 0.85 1000 10000 0.8 100000 LE 100000 20 1.4 18 1.3 16 1.2 14 1.1 12 1 10 Vdd=3V Vdd=5V 0.8 8 100 0.9 1000 10000 100000 Rbias (Ohms) O Rbias (Ohms) Vdd=3V Vdd=5V 16 Gain, Noise Figure & Rbias @ 2700 MHz Vdd=3V Vdd=5V 1000 1 100 B SO IP3 (dBm) 29 18 NOISE FIGURE (dB) 32 1.05 Rbias (Ohms) Output IP3 vs. Rbias @ 2700 MHz 35 20 10 100000 Rbias (Ohms) 38 1.1 TE 26 GAIN (dB) IP3 (dBm) 32 22 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 35 7-5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Rbias (Ohms) 3V Idd (mA) Min Max Recommended 2K 28 1.8k [1] Open Circuit 5.6K 40 47K 47 270 61 820 81 2K 95 5V 0 Open Circuit TE Vdd (V) Absolute Maximum Ratings +5.5V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 11.1 mW/°C above 85 °C) 0.72 W Thermal Resistance (channel to ground paddle) 90 °C/W ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS B SO Drain Bias Voltage (Vdd) LE [1] With Vdd= 3V and Rbias < 1.8k Ohms may result in the part becoming conditionally stable which is not recommended. Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Amplifiers - Low Noise - SMT 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values O Typical Supply Current vs. Supply Voltage (Rbias = 2k for Vdd = 5V, Rbias = 47k for Vdd = 3V) Vdd (V) Idd (mA) 2.7 35 3.0 47 3.3 57 4.5 80 5.0 95 5.5 110 Note: Amplifier will operate over full voltage ranges shown above. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC715LP3 / 715LP3E v01.0808 LE TE Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. O 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC715LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC715LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 715 XXXX 715 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz Description N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. Interface Schematic 2 RFIN This pin is DC coupled. See application circuit for off chip component. 11 RFOUT This pin is DC coupled. See application circuit for off chip component. 8 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power supply voltage. Bypass capacitors are required. See application circuit. LE B SO Pin Number TE Function 1, 3 - 7, 9, 10, 12 - 14, 16 Ground paddle must be connected to RF/DC ground. O GND Amplifiers - Low Noise - SMT 7 Pin Descriptions Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 HMC715LP3 / 715LP3E v01.0808 B SO LE TE Application Circuit O Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7-9 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz TE LE B SO O List of Materials for Evaluation PCB 122492 Item Description J1, J2 PCB Mount SMA RF Connector J3, J4 DC Pin C1 100pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 0.47µF Capacitor, 0603 Pkg. C4 68pF Capacitor, 0402 Pkg. C5 3.3pF Capacitor, 0402 Pkg. R1 2kΩ Resistor, 0402 Pkg. U1 HMC715LP3(E) Amplifier PCB [2] 122490 Evaluation PCB Amplifiers - Low Noise - SMT 7 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. or Arlon 25R Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 20 delivery, and to place orders: Analog For price, delivery and to place orders: Microwave Corporation, Alpha Road, Chelmsford, MADevices, 01824 Inc., responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10
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