HMC717LP3E

HMC717LP3E v06.1113 Features The HMC717LP3E is ideal for: Noise Figure: 1.1 dB • Fixed Wireless and LTE/WiMAX/4G Gain: 16.5 dB • BTS & Infrastructure Output IP3: +31.5 dBm • Repeaters and Femtocells Single Supply: +3V to +5V TE Typical Applications • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 • Access Points Functional Diagram General Description SO LE The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. B AMPLIFIER - LOW NOISE - SMT GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Electrical Specifi cations O TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Parameter Vdd = +3V Min. Frequency Range Gain Typ. 12 14.3 0.01 Noise Figure 1.25 Input Return Loss Output Third Order Intercept (IP3) Total Supply Current (Idd) 21 13.5 1.5 16.5 1.1 15 15 25.5 27 40 [3] Units GHz 21 dB dB/ °C 1.4 13 14 31 Max. 0.01 13 12 Typ. 4.8 - 6.0 13 Output Return Loss Saturated Output Power (Psat) Min. 4.8 - 6.0 Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) Vdd = +5V Max. dB dB 18 dB 18.5 dBm 19.5 dBm 31.5 73 dBm 100 mA [1] Rbias resistor sets current, see application circuit herein [2] Vdd = Vdd1 = Vdd2 [3] Guaranteed by Design at 5GHz. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from978-250-3343 its use. Specifications subject to change without notice. No Phone: Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Broadband Gain & Return Loss [1][2] Gain vs. Temperature [1] 25 25 S21 21 10 S11 0 -5 -10 -15 S22 -25 -30 1 2 3 4 5 6 7 FREQUENCY (GHz) 8 SO 5 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 5.3 5.7 FREQUENCY (GHz) +25C 6.1 +85C 6.5 -40C +85C -5 -10 -15 -20 4.5 6.5 4.9 -40C B +25C Output Return Loss vs. Temperature [1] 5.3 5.7 FREQUENCY (GHz) +25C 6.1 +85C 6.5 -40C Reverse Isolation vs. Temperature [1] -20 O 0 -25 ISOLATION (dB) -5 -10 -15 -20 -25 4.5 4.9 0 21 9 5 4.5 Input Return Loss vs. Temperature [1] 25 13 10 Vdd=3V Gain vs. Temperature [2] 17 9 LE Vdd=5V GAIN (dB) 13 9 -20 RETURN LOSS (dB) 17 TE GAIN (dB) 5 RETURN LOSS (dB) RESPONSE (dB) 15 AMPLIFIER - LOW NOISE - SMT 20 -30 -35 -40 -45 4.9 5.3 5.7 FREQUENCY (GHz) +25C [1] Vdd = 5V, Rbias = 2kΩ +85C 6.1 6.5 -40C -50 4.5 4.9 5.3 5.7 FREQUENCY (GHz) +25C +85C 6.1 6.5 -40C [2] Vdd = 3V, Rbias = 20kΩ Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. 2 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 2.1 24 20 1.5 P1dB (dBm) 1.2 0.9 0.6 +25C 18 16 TE NOISE FIGURE (dB) Vdd=5V 22 1.8 14 12 -40C 0.3 10 Vdd=3V 0 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 12 10 8 4.5 +25C +85C 6.5 -40C 34 IP3 (dBm) 31 28 25 22 Vdd=3V 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 +85C 19 Vdd=3V 16 4.5 6.5 4.9 Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz [3] 5.3 5.7 FREQUENCY (GHz) +25C -40C B +25C 6.1 +85C 6.5 -40C Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz [3] 125 30 95 32 110 80 30 95 28 28 80 26 65 26 65 24 50 24 50 22 35 22 35 20 20 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 IP3 (dBm) 34 O 110 20 20 2.7 3.1 3.5 Voltage Supply (V) IP3-3V IP3-5V Idd (mA) 32 Idd (mA) IP3 (dBm) 6.1 Vdd=5V 37 SO 14 5.3 5.7 FREQUENCY (GHz) 40 Vdd=5V 20 16 4.9 Output IP3 vs. Temperature [1] [2] 24 18 6.5 Vdd=3V Psat vs. Temperature [1] [2] 22 8 4.5 LE Vdd=5V Psat (dBm) AMPLIFIER - LOW NOISE - SMT +85C 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Idd-3V Idd-5V IP3-3V IP3-5V Idd-3V Idd-5V [1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 20kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing. 3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from978-250-3343 its use. Specifications subject to change without notice. No Phone: Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Power Compression @ 4800 MHz [1] Power Compression @ 4800 MHz [2] 25 Pout (dBm), GAIN (dB), PAE (%) 20 15 5 0 -5 -10 -20 -15 -10 -5 INPUT POWER (dBm) PAE -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 Gain 4 PAE Power Compression @ 5900 MHz [2] 20 SO 15 Pout (dBm), GAIN (dB), PAE (%) 25 10 5 0 -5 -10 -20 -16 -12 -8 -4 0 INPUT POWER (dBm) Gain 18 1.4 16 1.3 14 1.2 12 1.1 10 O 1.5 8 [1] Vdd = 5V, Rbias = 2k Ω -10 -20 -15 4.7 5.1 -10 -5 INPUT POWER (dBm) Pout 0 Gain 5 PAE 1.6 20 1.5 18 1.4 16 1.3 14 1.2 1 12 1.1 0.9 10 5.5 Voltage Supply (V) P1dB Gain 0 -5 2.7 NOISE FIGURE (dB) 20 4.3 5 22 NOISE FIGURE (dB) 1.6 3.9 10 Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz [3] 22 3.5 15 8 Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz [3] 3.1 20 PAE B Pout 4 Gain (dB) & P1dB (dBm) Pout (dBm), GAIN (dB), PAE (%) 25 Gain (dB) & P1dB (dBm) 0 -5 Pout Power Compression @ 5900 MHz [1] 2.7 5 -10 -20 5 Gain 10 LE Pout 0 15 TE 10 20 AMPLIFIER - LOW NOISE - SMT Pout (dBm), GAIN (dB), PAE (%) 25 1 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) NF [2] Vdd = 3V, Rbias = 20kΩ P1dB Gain NF [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. 4 HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz 2.2 30 17 2 28 14 1.8 11 1.6 8 1.4 5 1.2 26 24 22 20 100 10000 Rbias (Ohms) 100000 10000 Vdd=3V Vdd=5V Gain, Noise Figure & Rbias @ 5900 MHz SO 1000 10000 Rbias (Ohms) 100000 Vdd=5V 18 1.7 16 1.6 14 1.5 12 1.4 10 1.3 8 1.2 1.1 6 100 1000 10000 100000 Rbias (Ohms) Vdd=3V Vdd=5V O B Vdd=3V 100000 NOISE FIGURE (dB) IP3 (dBm) 32 20 100 1000 LE Vdd=5V 35 23 100 Rbias (Ohms) Output IP3 vs. Rbias @ 5900 MHz 26 1 2 1000 Vdd=3V 29 TE GAIN (dB) 20 GAIN (dB) IP3 (dBm) Gain, Noise Figure & Rbias @ 4800 MHz 32 NOISE FIGURE (dB) AMPLIFIER - LOW NOISE - SMT Output IP3 vs. Rbias @ 4800 MHz 5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax:rights 978-250-3373 Order781-329-4700 On-line at www.hittite.com Phone: • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Rbias (Ohms) Min Max 2k [1] 3V Open Circuit 150 [2] 5V Recommended Open Circuit Idd (mA) 2k 20 4.7k 26 20k 31 261 50 1k 65 2k 73 TE Vdd (V) [1] With Vdd= 3V and Rbias < 2k Ω may result in the part becoming conditionally stable which is not recommended. LE [2] With Vdd = 5V and Rbias