HMC755LP4E

HMC755LP4E v05.0312 Typical Applications Features The HMC755LP4E is Ideal for: High Gain: 31 dB • Cellular/3G & LTE/4G High PAE: 28% @ +33 dBm Pout • WiMAX, WiBro & Fixed Wireless Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal • Military & SATCOM High Output IP3: +43 dBm • Test Equipment TE Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² Functional Diagram General Description LE The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components. B SO Amplifiers - Linear & Power - SMT GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V Parameter Min. O Frequency Range Gain 28 Gain Variation Over Temperature Typ. Max. Units 2.3 - 2.8 GHz 31 dB 0.05 dB/ °C Input Return Loss 10 dB Output Return Loss 7 dB Output Power for 1dB Compression (P1dB) 31 dBm Saturated Output Power (Psat) 33 dBm Output Third Order Intercept (IP3) [1] 43 dBm Error Vector Magnitude @ 2.5 GHz (54 Mbps OFDM Signal @ +24.5 dBm Pout) 2.5 % Supply Current (Icc1 + Icc2 + Icc3) 28 400 480 600 mA Control Current (Ien1 + Ien2 + Ien3) 16 mA Bias Current (Ics) 12 mA [1] Two-tone output power of +25 dBm per tone, 1 MHz spacing. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz 40 30 35 20 30 10 GAIN (dB) S21 S11 S22 -10 15 -20 10 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 2 FREQUENCY (GHz) 2.2 2.4 2.6 2.8 3 3.2 LE FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 -5 -10 B SO RETURN LOSS (dB) +25 C +85 C - 40 C 20 TE 0 25 +25 C +85 C - 40 C -15 -20 2 2.2 2.4 2.6 2.8 3 +25 C +85 C - 40 C -5 -10 -15 2 3.2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) FREQUENCY (GHz) Amplifiers - Linear & Power - SMT Gain vs. Temperature 40 RETURN LOSS (dB) RESPONSE (dB) Broadband Gain & Return Loss 0 -10 ISOLATION (dB) O Reverse Isolation vs. Temperature -20 +25 C +85 C - 40 C -30 -40 -50 -60 -70 2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz 35 35 Psat (dBm) 40 30 +25 C +85 C - 40 C 25 20 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2.1 2.2 2.3 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) Output IP3 vs. Temperature @ 26 dBm 50 Output IP3 vs. Temperature @ 2.4 GHz 50 45 40 B SO 45 +25 C +85 C - 40 C 35 30 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 40 +25 C +85 C - 40 C 35 30 3 18 19 20 FREQUENCY (GHz) O 2.5 22 23 24 25 26 27 Power Compression @ 2.5 GHz 50 Pout (dBm), GAIN (dB), PAE (%) 3 21 SINGLE TONE POUT (dBm) 3.5 VDET (V) 2.4 LE FREQUENCY (GHz) VDET Output Voltage vs. Temperature +25 C +85 C - 40 C 2 1.5 1 0.5 0 40 30 20 Pout Gain PAE 10 0 13 17 21 25 OUTPUT POWER (dBm) 3 30 TE +25 C +85 C - 40 C IP3 (dB) P1dB (dBm) Psat vs. Temperature 40 25 IP3 (dBm) Amplifiers - Linear & Power - SMT P1dB vs. Temperature 29 33 -20 -15 -10 -5 0 5 INPUT POWER (dBm) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain & Power vs. Supply Voltage Noise Figure vs. Temperature NOISE FIGURE (dB) 10 40 Gain P1dB IP3 4 +25 C +85 C - 40 C 2 20 0 4.5 5 5.5 2.2 SUPPLY VOLTAGE (V) 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 LE FREQUENCY (GHz) EVM vs. Frequency (54 Mbps OFDM Signal) Power Dissipation 6 7 5.5 6 Max Pdiss @ +85C 5 5 4.5 4 3.5 3 2.5 2 -20 B SO POWER DISSIPATION (W) 6 TE 30 8 -15 -10 -5 0 5 4 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 3 2 1 0 15 17 INPUT POWER (dBm) 19 21 23 25 27 OUTPUT POWER (dBm) Amplifiers - Linear & Power - SMT 12 EVM (%) GAIN (dB), P1dB (dBm), IP3 (dBm) 50 O EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal) 7 6 EVM (%) 5 4 +25 C +85 C - 40 C 3 2 1 0 15 17 19 21 23 25 27 OUTPUT POWER (dBm) Information furnished by Analogand Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery to isplace Hittite Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order 781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Supply Current vs. Supply Voltage 5.5V Control Voltage (VEN1, 2, 3) Vcc +0.5 Vcc (V) Icq (mA) 4.5 430 RF Input Power (RFIN)(Vcc = +5V) Junction Temperature +5 dBm 5.0 480 150 °C 5.5 Continuous Pdiss (T = 85 °C) (derate 80 mW/°C above 85 °C) 530 5.2 W Thermal Resistance (junction to ground paddle) 12.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1B TE Collector Bias Voltage (Vcc1, Vcc2, Vcc3) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS LE Outline Drawing B SO Amplifiers - Linear & Power - SMT Absolute Maximum Ratings NOTES: O 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC755LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H755 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 N/C 2 GND Ground: Backside of package has exposed metal paddle that must be connected to ground thru a short path. Vias under the device are required. 4 RFIN This pin is DC coupled and matched to 50 Ohms. 7 VCS DC power supply pin for bias circuitry. VEN1 - 3 Power control pins. For max power these pins should be connected to 5V. This voltage can be reduced, or R1-R4 resistor values increased to reduce the quiescent current. For full power down, apply V