HMC788LP2ETR

HMC788LP2ETR

  • 厂商:

    AD(亚德诺)

  • 封装:

    VDFN6_EP

  • 描述:

    IC GAIN BLOCK AMP 6DFN

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC788LP2ETR 数据手册
HMC788LP2E v03.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications Gain: 14 dB • Microwave Radio 50 Ohm I/O’s • Test & Measurement Equipment 6 Lead 2x2 mm DFN SMT Package: 4 mm2 • UWB Communications Functional Diagram General Description The HMC788LP2E is a GaAs pHEMT Gain Block MMIC SMT DC to 10 GHz amplifier. This 2x2 mm DFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of many of HIttite’s single and double-balanced mixers with up to +20 dBm output power. The HMC788LP2E offers 14 dB of gain and an output IP3 of +30 dBm while requiring only 76 mA from a +5V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C Parameter Min. Typ. 12 9 14 12 Max. Units dB dB Gain DC - 6.0 GHz 6.0 - 10.0 GHz Gain Variation Over Temperature DC - 6.0 GHz 6.0 - 10.0 GHz 0.012 0.025 dB/ °C dB/ °C Return Loss Input DC - 6.0 GHz 6.0 - 10.0 GHz 16 9 dB dB Return Loss Output DC - 6.0 GHz 6.0 - 10.0 GHz 9 15 dB dB Reverse Isolation DC - 10.0 GHz Output Power for 1 dB Compression (P1dB) DC - 6.0 GHz 6.0 - 10.0 GHz Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 25 dB 20 18 dBm dBm DC - 6.0 GHz 6.0 - 10.0 GHz 30 27 dBm dBm DC - 6.0 GHz 6.0 - 10.0 GHz 7 9 dB 76 mA 18 15 Note: Data taken with broadband bias tee on device output. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC788LP2E v03.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Broadband Gain & Return Loss Gain vs. Temperature 15 10 GAIN (dB) RESPONSE (dB) 20 0 10 -10 -20 5 -30 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) S21 S11 +25 C S22 8 10 12 0 -5 -5 -10 -15 -20 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 -15 -20 -25 -25 -30 -30 0 2 4 6 8 10 0 12 2 4 +25 C 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz) +85 C +25 C -40 C Reverse Isolation vs. Temperature 20 -15 15 -20 -25 +85 C -40 C Noise Figure vs. Temperature -10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 6 FREQUENCY (GHz) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 20 30 10 5 0 -30 0 2 4 6 8 10 12 0 2 4 +25 C +85 C 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz) -40 C +25 C +85 C -40 C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC788LP2E v03.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz 25 20 20 Psat (dBm) P1dB (dBm) Psat vs. Temperature 25 15 15 10 10 5 5 0 2 4 6 8 10 0 12 2 4 +25 C +85 C +25 C -40 C Power Compression @ 1 GHz 8 10 12 +85 C -40 C Power Compression @ 10 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 60 50 40 30 20 10 25 20 15 10 5 0 0 -10 -5 0 5 -10 10 -5 Pout 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) Gain Pout PAE Output IP3 vs. Temperature [1] Gain PAE Gain & Power vs. Supply Voltage @ 1 GHz 35 GAIN (dB), P1dB (dBm), IP3 (dBm) 40 30 IP3 (dBm) 6 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT P1dB vs. Temperature 25 20 15 30 20 10 10 0 2 4 6 8 10 12 +25 C +85 C 4.5 5 5.5 SUPPLY VOLTAGE (V) FREQUENCY (GHz) -40 C Gain P1dB IP3 [1] +5 dBm / Tone Output Power 3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC788LP2E v03.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) +7V Vcc (V) Icq (mA) RF Input Power (RFIN)(Vs = +5V) +15 dBm 4.5 64 Junction Temperature 150 °C 5.0 76 5.5 88 Continuous Pdiss (T = 85 °C) (derate 10.4 mW/°C above 85 °C) 0.68 W Thermal Resistance (junction to ground paddle) 96 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Typical Supply Current 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC788LP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] 788 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 4 HMC788LP2E v03.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Pin Descriptions AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Pin Number 5 Function Description 1, 4, 6 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT RF output and DC Bias for the output stage. 3 GND This pin and exposed ground paddle must be connected to RF/DC ground. Interface Schematic Application Circuit Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com HMC788LP2E v03.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz List of Materials for Evaluation PCB 129550 Item Description J1 - J2 PC Mount SMA Connector J5, J6 DC Pin C1, C2 0.01 µF Capacitor, 0502 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 2.2 µF Case A Pkg. R1 0 Ohm Resistor, 0402 Pkg. L1 Inductor, Conical 6.35 µH U1 HMC788LP2E PCB [2] 129549 Evaluation PCB [1] AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2 delivery, andDrive, to place orders: AnalogMA Devices, For price, delivery andDevices to place orders: Hittite Microwave Elizabeth Chelmsford, 01824Inc., responsibility is assumed by Analog for its use, nor for any infringements of patents orCorporation, other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order at www.hittite.com Phone: On-line 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 6
HMC788LP2ETR
物料型号:HMC788LP2E

器件简介:HMC788LP2E是一款GaAs pHEMT增益模块MMIC SMT DC至10 GHz放大器。它采用2x2 mm DFN封装,可作为可级联的50欧姆增益阶段或驱动许多Hittite单平衡和双平衡混频器的本振端口,输出功率高达+20 dBm。

引脚分配: - 1.4.6:N/C(未连接) - 2:RFIN(射频输入) - 5:RFOUT(射频输出和输出阶段的直流偏置) - 3:GND(必须连接到射频/直流地)

参数特性: - 增益:14 dB - 输出IP3:+30 dBm - 1 dB压缩输出功率(P1dB):DC-6.0GHz时为18 dBm,6.0-10.0GHz时为15 dBm - 供电电流(Icq):76 mA - 工作温度范围:-40°C 至 +85°C

功能详解:HMC788LP2E提供14 dB的增益和+30 dBm的输出IP3,同时只需要76 mA的+5V电源。它采用达林顿反馈对,对正常工艺变化的敏感性降低,提供了出色的增益稳定性,同时只需要最少数量的外部偏置组件。

应用信息:适用于蜂窝/3G、LTE/WiMAX/4G、微波无线电、测试和测量设备、超宽带通信等。

封装信息:6引脚2x2 mm DFN SMT封装,面积为4 mm²。
HMC788LP2ETR 价格&库存

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