Low Noise Amplifier,
0.01 GHz to 10 GHz
HMC8411LP2FE
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low noise figure: 1.7 dB typical
Single positive supply (self biased)
High gain: 15.5 dB typical
High OIP3: 34 dBm typical
6-lead, 2 mm × 2 mm LFCSP
HMC8411LP2FE
TOP VIEW
(Not to Scale)
RFIN 2
NC 3
APPLICATIONS
6 GND
5 RFOUT/VDD
4 NC
15859-001
RBIAS 1
Figure 1.
Test instrumentation
Military communications
GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 10 GHz.
The HMC8411LP2FE also features inputs and outputs that are
internally matched to 50 Ω, making the device ideal for surfacemounted technology (SMT)-based, high capacity microwave
radio applications.
The HMC8411LP2FE provides a typical gain of 15.5 dB, a
1.7 dB typical noise figure, and a typical output third-order
intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V
supply voltage. The saturated output power (PSAT) of 19.5 dBm
typical enables the low noise amplifier (LNA) to function as a
local oscillator (LO) driver for many of Analog Devices, Inc.,
balanced, in-phase/quadrature (I/Q), or image rejection mixers.
The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm ×
2 mm, 6-lead LFCSP.
Rev. B
Multifunction pin names may be referenced by their relevant
function only.
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©2019 Analog Devices, Inc. All rights reserved.
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HMC8411LP2FE
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications ....................................................................................... 1
Interface Schematics .....................................................................6
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................7
General Description ......................................................................... 1
Theory of Operation ...................................................................... 18
Revision History ............................................................................... 2
Applications Information .............................................................. 19
Specifications..................................................................................... 3
Recommended Bias Sequencing .............................................. 19
0.01 GHz to 1 GHz Frequency Range........................................ 3
Typical Application Circuit ....................................................... 20
1 GHz to 6 GHz Frequency Range ............................................. 3
Evaluation Board ............................................................................ 21
6 GHz to 10 GHz Frequency Range ........................................... 4
Outline Dimensions ....................................................................... 23
Absolute Maximum Ratings ............................................................ 5
Ordering Guide .......................................................................... 23
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
REVISION HISTORY
8/2019—Rev. A to Rev. B
Changes to Figure 68 ...................................................................... 17
3/2019—Revision 0: Initial Version
5/2019—Rev. 0 to Rev. A
Changes to Table 3 ............................................................................ 4
Changes to Theory of Operation Section .................................... 18
Rev. B | Page 2 of 23
Data Sheet
HMC8411LP2FE
SPECIFICATIONS
0.01 GHz TO 1 GHz FREQUENCY RANGE
VDD = 5 V, supply current (IDQ) = 55 mA, and TA = 25°C, unless otherwise noted.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
Symbol
Output Second-Order Intercept
POWER ADDED EFFICIENCY
SUPPLY CURRENT
SUPPLY VOLTAGE
OIP2
PAE
IDQ
VDD
P1dB
PSAT
OIP3
Min
0.01
12.5
17
2
Typ
Max
1
15.5
0.005
1.8
Unit
GHz
dB
dB/°C
dB
22
17
dB
dB
20
20.5
33.5
dBm
dBm
dBm
43
30
55
5
dBm
%
mA
V
6
Test Conditions/Comments
Measurement taken at output power (POUT) per
tone = 6 dBm
Measurement taken at POUT per tone one = 6 dBm
Measured at PSAT
1 GHz TO 6 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 55 mA, and TA = 25°C, unless otherwise noted.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
Output Second-Order Intercept
POWER ADDED EFFICIENCY
SUPPLY CURRENT
SUPPLY VOLTAGE
Symbol
P1dB
PSAT
OIP3
OIP2
PAE
IDQ
VDD
Min
1
12
17
2
Typ
Max
6
15
0.01
1.7
Unit
GHz
dB
dB/°C
dB
25
18
dB
dB
20
21
34
39
34
55
5
dBm
dBm
dBm
dBm
%
mA
V
6
Rev. B | Page 3 of 23
Test Conditions/Comments
Measurement taken at POUT per tone = 6 dBm
Measurement taken at POUT per tone = 6 dBm
Measured at PSAT
HMC8411LP2FE
Data Sheet
6 GHz TO 10 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 55 mA, and TA = 25°C, unless otherwise noted.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
Output Second-Order Intercept
POWER ADDED EFFICIENCY
SUPPLY CURRENT
SUPPLY VOLTAGE
Symbol
P1dB
PSAT
OIP3
OIP2
PAE
IDQ
VDD
Min
6
11
13
2
Typ
Max
10
14
0.018
2
Unit
GHz
dB
dB/°C
dB
15
17
dB
dB
16
19.5
33
40
23
55
5
dBm
dBm
dBm
dBm
%
mA
V
6
Rev. B | Page 4 of 23
Test Conditions/Comments
Measurement taken at POUT per tone = 6 dBm
Measurement taken at POUT per tone = 6 dBm
Measured at PSAT
Data Sheet
HMC8411LP2FE
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 4.
Parameter1
Drain Bias Voltage (VDD)
Radio Frequency Input (RFIN) Power
Channel Temperature
Continuous Power Dissipation (PDISS), T = 85°C
(Derate 12.2 mW/°C Above 85°C)
Storage Temperature Range
Operating Temperature Range
Peak Reflow Temperature Moisture
Sensitivity Level 1 (MSL1)2
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Close attention to
PCB thermal design is required.
Rating
7V
20 dBm
175°C
1.098 W
θJC is the junction to case thermal resistance.
Table 5. Thermal Resistance
−65°C to +150°C
−40°C to +85°C
260°C
Package Type
CP-6-12
ESD CAUTION
500 V,
Class 1B passed
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the specification is listed.
For full pin names of multifunction pins, refer to the Pin Configuration and
Function Descriptions section.
2
See the Ordering Guide section for more information.
1
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. B | Page 5 of 23
θJC
82
Unit
°C/W
HMC8411LP2FE
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC8411LP2FE
TOP VIEW
(Not to Scale)
RFIN 2
NC 3
6 GND
5 RFOUT/VDD
4 NC
NOTES
1. NC = NO CONNECT. THIS PIN IS NOT
CONNECTED INTERNALLY. THIS PIN MUST BE
CONNECTED TO THE RF AND DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF AND DC GROUND.
15859-002
RBIAS 1
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
1
Mnemonic
RBIAS
2
3, 4
5
RFIN
NC
RFOUT/VDD
6
GND
EPAD
Description
Current Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See
Figure 3 for the interface schematic.
RF Input (RFIN). This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
No Connect. This pin is not connected internally. This pin must be connected to the RF and dc ground.
RF Output (RFOUT). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Drain Bias for the Amplifier (VDD). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface
schematic.
Ground. This pin must be connected to the RF and dc ground. See Figure 6 for the interface schematic.
Exposed Pad. The exposed pad must be connected to RF and dc ground.
INTERFACE SCHEMATICS
RBIAS
15859-005
15859-006
RFOUT/VDD
Figure 3. RBIAS Interface Schematic
15859-003
GND
15859-004
RFIN
Figure 5. RFOUT/VDD Interface Schematic
Figure 6. GND Interface Schematic
Figure 4. RFIN Interface Schematic
Rev. B | Page 6 of 23
Data Sheet
HMC8411LP2FE
20
20
10
10
RESPONSE (dB)
0
S11
S21
S22
–10
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
–30
Figure 7. Gain and Return Loss (Response) vs. Frequency, 10 MHz to 200 MHz,
VDD = 5 V, IDQ = 55 mA
0
6
8
10
12
14
16
Figure 10. Broadband Gain and Return Loss (Response) vs. Frequency,
200 MHz to 16 GHz, VDD = 5 V, IDQ = 55 mA
16
16
14
14
GAIN (dB)
18
10
4
FREQUENCY (GHz)
18
12
2
15859-010
0
15859-007
–30
8
12
10
8
+85°C
+25°C
–40°C
4
0
25
50
75
100
125
150
175
+85°C
+25°C
–40°C
6
200
FREQUENCY (MHz)
4
15859-008
6
Figure 8. Gain vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
0
6
8
10
12
Figure 11. Gain vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
16
16
14
14
GAIN (dB)
18
10
4
FREQUENCY (GHz)
18
12
2
15859-011
GAIN (dB)
–10
–20
–20
GAIN (dB)
S11
S21
S22
0
8
12
10
8
6
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
4
0
2
4
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
6
6
FREQUENCY (GHz)
8
10
12
4
15859-009
2V,
3V,
4V,
5V,
6V,
Figure 9. Gain vs. Frequency for Various Supply Voltages and Currents (IDD),
RBIAS = 1.1 kΩ
0
2
4
6
FREQUENCY (GHz)
8
10
12
15859-012
RESPONSE (dB)
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 12. Gain vs. Frequency for Various Bias Resistor Values and IDQ,
VDD = 5 V
Rev. B | Page 7 of 23
HMC8411LP2FE
Data Sheet
0
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
INPUT RETURN LOSS (dB)
–10
–15
–15
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
–25
15859-013
–25
0
2
4
6
8
10
Figure 13. Input Return Loss vs. Frequency, 10 MHz to 200 MHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
Figure 16. Input Return Loss vs. Frequency, 200 MHz to 12 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
0
0
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
–5
INPUT RETURN LOSS (dB)
2V,
3V,
4V,
5V,
6V,
–5
–10
–15
–10
–15
0
2
4
6
8
10
12
FREQUENCY (GHz)
–25
15859-014
–25
Figure 14. Input Return Loss vs. Frequency for Various Supply Voltages and IDD,
RBIAS = 1.1 kΩ
0
2
4
6
8
10
12
FREQUENCY (GHz)
15859-017
–20
–20
Figure 17. Input Return Loss vs. Frequency for Various Bias Resistor Values and IDQ,
VDD = 5 V
0
0
+85°C
+25°C
–40°C
OUTPUT RETURN LOSS (dB)
+85°C
+25°C
–40°C
–5
–10
–15
–20
0
25
50
75
100
125
FREQUENCY (MHz)
150
175
200
15859-015
OUTPUT RETURN LOSS (dB)
12
FREQUENCY (GHz)
15859-016
–20
–20
INPUT RETURN LOSS (dB)
–10
Figure 15. Output Return Loss vs. Frequency, 10 MHz to 200 MHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
–5
–10
–15
–20
–25
0
2
4
6
FREQUENCY (GHz)
8
10
12
15859-018
INPUT RETURN LOSS (dB)
–5
Figure 18. Output Return Loss vs. Frequency, 200 MHz to 12 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
Rev. B | Page 8 of 23
Data Sheet
HMC8411LP2FE
0
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
–10
–15
–20
–25
0
2
4
6
8
10
12
FREQUENCY (GHz)
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
–5
–10
–15
–20
–25
0
6
8
10
12
Figure 22. Output Return Loss vs. Frequency for
Various Bias Resistor Values and IDQ, VDD = 5 V
0
0
+85°C
+25°C
–40°C
–5
–10
–15
–20
–25
–10
–15
–20
–25
+85°C
+25°C
–40°C
–30
–30
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
–35
0
–5
–5
REVERSE ISOLATION (dB)
0
–10
–15
–20
–25
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
–35
0
2
4
6
8
10
FREQUENCY (GHz)
12
8
10
12
–10
–15
–20
–25
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
–30
15859-021
–30
6
Figure 23. Reverse Isolation vs. Frequency, 200 MHz to 12 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
0
IDD
IDD
IDD
IDD
IDD
4
FREQUENCY (GHz)
Figure 20. Reverse Isolation vs. Frequency, 10 MHz to 200 MHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
2V,
3V,
4V,
5V,
6V,
2
Figure 21. Reverse Isolation vs. Frequency for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
–35
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 24. Reverse Isolation vs. Frequency for
Various Bias Resistor Values and IDQ, VDD = 5 V
Rev. B | Page 9 of 23
12
15859-024
0
15859-020
–35
15859-023
REVERSE ISOLATION (dB)
–5
REVERSE ISOLATION (dB)
4
FREQUENCY (GHz)
Figure 19. Output Return Loss vs. Frequency for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
REVERSE ISOLATION (dB)
2
15859-022
–5
IDD
IDD
IDD
IDD
IDD
OUTPUT RETURN LOSS (dB)
2V,
3V,
4V,
5V,
6V,
15859-019
OUTPUT RETURN LOSS (dB)
0
HMC8411LP2FE
Data Sheet
6
10
+85°C
+25°C
–40°C
5
6
4
2
20
40
60
80
100
120
140
160
180
200
2
FREQUENCY (MHz)
+85°C
+25°C
–40°C
0
15859-025
0
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 25. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
Figure 28. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
6
10
2V,
3V,
4V,
5V,
6V,
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
2V,
3V,
4V,
5V,
6V,
5
NOISE FIGURE (dB)
8
6
4
2
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
4
3
2
0
20
40
60
80
100
120
140
160
180
200
FREQUENCY (MHz)
0
15859-026
0
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 26. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
15859-029
1
Figure 29. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
10
6
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
5
NOISE FIGURE (dB)
8
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
6
4
2
4
3
2
0
0
20
40
60
80
100
120
140
160
180
200
FREQUENCY (MHz)
15859-027
1
Figure 27. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
0
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 30. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
Rev. B | Page 10 of 23
15859-030
NOISE FIGURE (dB)
3
1
0
NOISE FIGURE (dB)
4
15859-028
NOISE FIGURE (dB)
NOISE FIGURE (dB)
8
HMC8411LP2FE
24
24
20
20
P1dB (dBm)
16
12
8
16
12
8
+85°C
+25°C
–40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
Figure 31. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
0
28
24
24
20
20
12
6
8
10
12
16
12
8
4
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0.8
0.9
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2V,
3V,
4V,
5V,
6V,
4
1.0
FREQUENCY (GHz)
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0
15859-032
2V,
3V,
4V,
5V,
6V,
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 32. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
15859-035
8
Figure 35. P1dB vs. Frequency, 1 GHz to 12 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
28
24
24
20
20
P1dB (dBm)
28
16
12
16
12
8
8
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
4
0
0
0.1
0.2
0.3
0.4
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
4
0.5
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1.0
15859-033
P1dB (dBm)
4
Figure 34. P1dB vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
28
16
2
FREQUENCY (GHz)
P1dB (dBm)
P1dB (dBm)
4
15859-031
4
15859-034
+85°C
+25°C
–40°C
Figure 33. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 36. P1dB vs. Frequency, 1 GHz to 12 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
Rev. B | Page 11 of 23
12
15859-036
P1dB (dBm)
Data Sheet
Data Sheet
24
24
20
20
PSAT (dBm)
16
12
16
12
8
8
+85°C
+25°C
–40°C
0
0.1
0.2
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
Figure 37. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
0
28
24
24
20
20
12
6
8
10
12
16
12
8
4
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0.2
0.3
0
0
0.1
2V,
3V,
4V,
5V,
6V,
4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0
15859-038
2V,
3V,
4V,
5V,
6V,
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 38. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
15859-041
8
Figure 41. PSAT vs. Frequency, 1 GHz to 12 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
28
24
24
20
20
PSAT (dBm)
28
16
12
16
12
8
8
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
4
0
0
0.1
0.2
0.3
0.4
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
4
0.5
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1.0
15859-039
PSAT (dBm)
4
Figure 40. PSAT vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
28
16
2
FREQUENCY (GHz)
PSAT (dBm)
PSAT (dBm)
4
15859-037
4
15859-040
+85°C
+25°C
–40°C
Figure 39. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 42. PSAT vs. Frequency, 1 GHz to 12 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
Rev. B | Page 12 of 23
12
15859-042
PSAT (dBm)
HMC8411LP2FE
HMC8411LP2FE
45
45
40
40
35
35
30
30
PAE (%)
25
20
25
20
15
15
10
+85°C
+25°C
–40°C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
0
0
10
12
68
6
–6
–2
2
6
10
14
89
24
18
75
12
68
6
54
0
–10
61
54
–6
10
6
2
–2
14
18
INPUT POWER (dBm)
Figure 44. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 1 GHz, VDD = 5 V, IDQ = 55 mA
Figure 47. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 5 GHz, VDD = 5 V, IDQ = 55 mA
30
180
25
POUT
GAIN
PAE
I DD
GAIN (dB), P1dB (dBm), PSAT (dBm)
89
75
IDD (mA)
82
12
68
6
54
–2
2
6
10
14
18
INPUT POWER (dBm)
15859-045
61
–6
GAIN
P1dB
PSAT
I DD
96
18
IDD (mA)
82
61
18
96
Figure 45. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 10 GHz, VDD = 5 V, IDQ = 55 mA
20
160
140
15
120
100
10
80
5
60
40
0
2
3
4
5
6
7
8
SUPPLY VOLTAGE (V)
Figure 48. POUT, Gain, PAE, and IDD vs. Supply Voltage,
Power Compression at 1 GHz, RBIAS = 1.1 kΩ
Rev. B | Page 13 of 23
IDD (mA)
12
30
15859-047
POUT (dBm), GAIN (dB), PAE (%)
75
IDD (mA)
18
15859-044
POUT (dBm), GAIN (dB), PAE (%)
89
INPUT POWER (dBm)
POUT (dBm), GAIN (dB), PAE (%)
8
POUT
GAIN
PAE
I DD
96
82
0
–10
6
36
POUT
GAIN
PAE
I DD
24
24
4
Figure 46. PAE vs. Frequency, 1 GHz to 12 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
36
0
–10
2
FREQUENCY (GHz)
Figure 43. PAE vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Temperatures, VDD = 5 V, IDQ = 55 mA
30
+85°C
+25°C
–40°C
5
15859-043
5
15859-046
10
15859-048
PAE (%)
Data Sheet
HMC8411LP2FE
Data Sheet
180
80
GAIN
P1dB
PSAT
I DD
5
60
0
3
4
5
6
8
7
140
15
SUPPLY VOLTAGE (V)
120
100
10
80
GAIN
P1dB
PSAT
I DD
5
40
6
7
8
SUPPLY VOLTAGE (V)
Figure 52. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 10 GHz, RBIAS = 1.1 kΩ
0.6
75
0.5
60
IM3 (dBc)
0.4
0.3
45
30
0.2
15
10GHz
5GHz
1GHz
0
–10
–6
–2
2
6
10
14
10GHz
5GHz
1GHz
18
INPUT POWER (dBm)
0
0
1
2
3
4
5
6
7
8
POUT PER TONE (dBm)
Figure 50. Power Dissipation vs. Input Power at TA = 85°C,
VDD = 5 V, IDQ = 55 mA
15859-053
0.1
15859-050
Figure 53. IM3 vs. POUT per Tone for Various Frequencies,
VDD = 5 V, IDQ = 55 mA
40
35
35
30
30
OIP3 (dBm)
40
25
20
25
20
15
15
+85°C
+25°C
–40°C
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1.0
10
15859-051
10
Figure 51. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
+85°C
+25°C
–40°C
0
2
4
6
FREQUENCY (GHz)
8
10
12
15859-054
POWER DISSIPATION (W)
5
4
3
2
Figure 49. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 5 GHz, RBIAS = 1.1 kΩ
OIP3 (dBm)
60
0
15859-049
40
2
20
15859-052
100
10
IDD (mA)
140
120
160
GAIN (dB), P1dB (dBm), PSAT (dBm)
GAIN (dB), P1dB (dBm), PSAT (dBm)
160
20
15
180
25
IDD (mA)
25
Figure 54. OIP3 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
Rev. B | Page 14 of 23
HMC8411LP2FE
42
42
36
36
30
30
OIP3 (dBm)
24
18
12
24
18
12
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0.8
0.9
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2V,
3V,
4V,
5V,
6V,
6
1.0
FREQUENCY (GHz)
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 58. OIP3 vs. Frequency, 1 GHz to 12 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
45
45
40
40
35
35
30
30
OIP3 (dBm)
25
20
25
20
15
15
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
5
5
0
0
0.1
0.2
0.3
0.4
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
10
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
0
15859-056
10
0
50
45
45
40
40
35
35
OIP2 (dBm)
55
50
30
25
20
15
10
+85°C
+25°C
–40°C
0.4
0.5
0.6
FREQUENCY (GHz)
0.7
0.8
0.9
1.0
0
15859-057
0.3
12
+85°C
+25°C
–40°C
5
0
0.2
10
25
15
0.1
8
30
20
0
6
Figure 59. OIP3 vs. Frequency, 1 GHz to 12 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
55
5
4
FREQUENCY (GHz)
Figure 56. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
10
2
15859-059
OIP3 (dBm)
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0
Figure 55. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
OIP2 (dBm)
IDD
IDD
IDD
IDD
IDD
15859-058
6
IDD
IDD
IDD
IDD
IDD
15859-055
2V,
3V,
4V,
5V,
6V,
Figure 57. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
0
2
4
6
FREQUENCY (GHz)
8
10
12
15859-060
OIP3 (dBm)
Data Sheet
Figure 60. OIP2 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures,
VDD = 5 V, IDQ = 55 mA
Rev. B | Page 15 of 23
Data Sheet
55
55
50
50
45
45
40
40
35
35
OIP2 (dBm)
30
25
30
25
20
20
15
10
5
IDD
IDD
IDD
IDD
IDD
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
0.8
0.9
5
0
0
0.1
0.2
0.4
0.3
0.5
0.6
0.7
2V,
3V,
4V,
5V,
6V,
10
1.0
FREQUENCY (GHz)
0
= 20mA
= 32mA
= 44mA
= 55mA
= 67mA
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 61. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
Figure 64. OIP2 vs. Frequency, 1 GHz to 12 GHz, for
Various Supply Voltages and IDD, RBIAS = 1.1 kΩ
55
55
50
50
45
45
40
40
35
35
OIP2 (dBm)
OIP2 (dBm)
IDD
IDD
IDD
IDD
IDD
0
15859-061
2V,
3V,
4V,
5V,
6V,
15859-064
15
30
25
30
25
20
20
15
15
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
5
5
0
0
0.1
0.2
0.3
0.4
510Ω, IDQ = 75mA
780Ω, IDQ = 65mA
1.1kΩ, IDQ = 55mA
1.8kΩ, IDQ = 45mA
3.0kΩ, IDQ = 35mA
10
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
0
15859-062
10
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 62. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
15859-065
OIP2 (dBm)
HMC8411LP2FE
Figure 65. OIP2 vs. Frequency, 1 GHz to 12 GHz, for
Various Bias Resistor Values and IDQ, VDD = 5 V
75
–120
65
60
55
50
–10
–6
–2
2
6
10
INPUT POWER (dBm)
14
15859-063
IDD (mA)
70
Figure 63. IDD vs. Input Power for Various Frequencies,
VDD = 5 V
–130
–140
–150
–160
–170
–180
1k
10k
100k
1M
OFFSET FREQUENCY (Hz)
Figure 66. Additive Phase Noise vs. Offset Frequency,
RF Frequency = 6 GHz, RF Input Power = 0 dBm
Rev. B | Page 16 of 23
10M
15859-066
ADDITIVE PHASE NOISE (dBc/Hz)
10GHz
5GHz
1GHz
Data Sheet
HMC8411LP2FE
125
90
80
100
70
60
IDQ (mA)
IDQ (mA)
75
50
25
50
40
30
20
0
0
1
2
3
4
VDD (V)
5
6
7
8
Figure 67. IDQ vs. VDD, Representative of a Typical Device, RBIAS = 1.1 kΩ
Rev. B | Page 17 of 23
0
0
2000
4000
6000
8000
BIAS RESISTOR VALUE (Ω)
Figure 68. IDQ vs. Bias Resistor Value, VDD = 5 V
10000
15859-068
–25
15859-067
10
HMC8411LP2FE
Data Sheet
THEORY OF OPERATION
The HMC8411LP2FE is a GaAs, MMIC, pHEMT, low noise
wideband amplifier.
The HMC8411LP2FE is a cascode amplifier that uses a
fundamental cell of two field effect transistors (FETs) in series,
source to drain. The basic schematic for the cascode cell is shown
in Figure 69, which forms a low noise amplifier operating from
0.01 GHz to 10 GHz with excellent noise figure performance.
VDD
RFOUT
The HMC8411LP2FE is a single-supply bias amplifier using an
external resistor on the RBIAS pin to set the IDQ current. To adjust
the IDQ current, change the RBIAS resistor value.
15859-069
RFIN
The HMC8411LP2FE has single-ended input and output ports
with impedances that nominally equal 50 Ω over the 0.01 GHz
to 10 GHz frequency range. As a result, the device can be directly
inserted into a 50 Ω system with external components on the
RF input and output, as shown in Figure 70, without narrowbanded matching solutions. There is a need for an external bias
choke for VDD on the RFOUT pin followed by a dc blocking
capacitor, as well as a dc blocking capacitor on the RFIN port. On
the RF input, there is an additional resistor, inductor, and
capacitor (RLC) shunt network that aids unconditional stability
below 100 MHz.
Figure 69. GaAs, MMIC, pHEMT, Low Noise Wideband Amplifier Schematic
Rev. B | Page 18 of 23
Data Sheet
HMC8411LP2FE
APPLICATIONS INFORMATION
The basic connections for operating the HMC8411LP2FE are
shown in Figure 70. AC couple the input and output of the
HMC8411LP2FE with appropriately sized capacitors. DC block
capacitors are supplied on the RFIN and RFOUT pin of the
evaluation board. A 5 V dc bias is supplied to the amplifier
through the choke inductor connected to the RFOUT pin.
The HMC8411LP2FE operates in self-bias mode when the RBIAS
pin is connected to a 1.1 kΩ external resistor to achieve a 55 mA
supply current.
Refer to Table 7 for the recommended resistor values to achieve
different supply currents.
RECOMMENDED BIAS SEQUENCING
During Power-Up
The recommended bias sequence during power-up follows:
1.
2.
Set VDD to 5 V.
Apply the RF signal.
During Power-Down
The recommended bias sequence during power-down follows:
1.
2.
Turn off the RF signal.
Set VDD to 0 V.
The bias conditions, VDD = 5 V and IDQ = 55 mA, are the
recommended operating point to achieve optimum performance.
The data used in this data sheet was taken with the recommended
bias conditions. Using the HMC8411LP2FE with different bias
conditions can provide different performance than what is
shown in the Typical Performance Characteristics section.
Table 7. Recommended Bias Resistor Values
RBIAS (Ω)
400
510
635
780
960
1100
1400
1800
2270
3000
4000
5700
9000
IDQ (mA)
80
75
70
65
60
55
50
45
40
35
30
25
20
Amplifier Current, IDQ_AMP (mA)
75.97
71.32
66.64
61.95
57.27
52.47
47.82
43.16
38.45
33.75
29.15
24.93
19.95
Rev. B | Page 19 of 23
RBIAS Current, IDQ_BIAS (mA)
4.03
3.68
3.36
3.05
2.73
2.53
2.18
1.84
1.55
1.25
0.85
0.07
0.05
HMC8411LP2FE
Data Sheet
TYPICAL APPLICATION CIRCUIT
VDD
C3
0.1µF
C4
10pF
GND
R1
1.1kΩ
HMC8411LP2FE
C1
RFIN
10nF
L2
590nH
1
6
2
5
3
4
GND
L1
0.9µH
C2
RFOUT
10nF
GND
R2
43Ω
15859-070
C11
0.1µF
GND
Figure 70. Typical Application Circuit
Rev. B | Page 20 of 23
Data Sheet
HMC8411LP2FE
EVALUATION BOARD
The EV1HMC8411LP2F evaluation board is a 4-layer board
fabricated using Rogers 4350 and using best practices for high
frequency RF design. The RF input and RF output traces have a
50 Ω characteristic impedance.
The evaluation board and populated components operate over
the −40°C to +85°C ambient temperature range. For proper bias
sequence, see the Applications Information section.
15859-071
The evaluation board schematic is shown in Figure 72. A fully
populated and tested evaluation board (see Figure 71) is
available from Analog Devices upon request.
Figure 71. EV1HMC8411LP2F Printed Circuit Board (PCB)
VDD
C3
0.1µF
C4
10pF
C14
100pF
DNI
GND
R1
1.1kΩ
GND
RBIAS
C1
10nF
RFIN
RFIN
NC
L2
590nH
GND
GND
R2
43Ω
1
6
2
5
3
EPAD
4
L1
0.9µH
GND
RFOUT/VDD
C2
10nF
RFOUT
NC
DUT1
GND
GND
HMC8411LP2FE
15859-072
C11
0.1µF
GND
Figure 72. EV1HMC8411LP2F Evaluation Board Schematic
Rev. B | Page 21 of 23
HMC8411LP2FE
Data Sheet
Table 8. Bill of Materials for Evaluation PCB EV1HMC8411LP2F
Item
RFIN, RFOUT
VDD, GND
C1, C2
C3
C4
C11
L1
L2
R1
R2
DUT1
Heat sink
Description
PCB mount SMA RF connectors, SRI 21-146-1000-01
DC bias test points
10 nF broadband dc blocking capacitors, Presidio LBB0201X103MET5C8L
Capacitor, 0.1 µF, 0402 package
Capacitor, 10 pF, 0201 package
Capacitor, 0.1 µF, 0201 package
Inductor, 0.9 µH, 0402, 5% ferrite, Coilcraft 0402DF-901XJRW
Inductor, 590 nH, 0402, 5% ferrite, Coilcraft 0402DF-591XJRU
1.1 kΩ resistor, 0201 package
43 Ω resistor, 0201 package
IC, HMC8411LP2FE
Heat sink
Rev. B | Page 22 of 23
Data Sheet
HMC8411LP2FE
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
1.70
1.60
1.50
2.05
2.00 SQ
1.95
0.65
BSC
5
8
PIN 1 INDEX
AREA
PKG-005241
SEATING
PLANE
SIDE VIEW
1
4
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.35
0.30
0.25
P IN 1
IN D IC ATO R AR E A OP T IO N S
(SEE DETAIL A)
BOTTOM VIEW
1.30 REF
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.203 REF
08-17-2018-A
0.30
0.25
0.20
TOP VIEW
0.90
0.85
0.80
1.10
1.00
0.90
EXPOSED
PAD
Figure 73. 6-Lead Lead Frame Chip Scale Package [LFCSP],
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-6-12)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1, 2
HMC8411LP2FE
HMC8411LP2FETR
EV1HMC8411LP2F
Temperature Range
−40°C to +85°C
−40°C to +85°C
MSL Rating 3
MSL1
MSL1
Package Description 4
6-Lead Lead Frame Chip Scale Package [LFCSP]
6-Lead Lead Frame Chip Scale Package [LFCSP]
Evaluation Board
The HMC8411LP2FE and HMC8411LP2FETR are RoHS compliant parts.
When ordering the evaluation board only, reference the model number, EV1HMC8411LP2F.
3
See the Absolute Maximum Ratings section for additional information.
4
The lead finish of the HMC8411LP2FE and HMC8411LP2FETR is nickel palladium gold (NiPdAu).
1
2
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15859-0-8/19(B)
Rev. B | Page 23 of 23
Package Option
CP-6-12
CP-6-12
工商网监
湘ICP备2023018690号
