HMC8411LP2FETR

Low Noise Amplifier, 0.01 GHz to 10 GHz HMC8411LP2FE Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.7 dB typical Single positive supply (self biased) High gain: 15.5 dB typical High OIP3: 34 dBm typical 6-lead, 2 mm × 2 mm LFCSP HMC8411LP2FE TOP VIEW (Not to Scale) RFIN 2 NC 3 APPLICATIONS 6 GND 5 RFOUT/VDD 4 NC 15859-001 RBIAS 1 Figure 1. Test instrumentation Military communications GENERAL DESCRIPTION The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surfacemounted technology (SMT)-based, high capacity microwave radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP. Rev. B Multifunction pin names may be referenced by their relevant function only. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC8411LP2FE Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions..............................6 Applications ....................................................................................... 1 Interface Schematics .....................................................................6 Functional Block Diagram .............................................................. 1 Typical Performance Characteristics ..............................................7 General Description ......................................................................... 1 Theory of Operation ...................................................................... 18 Revision History ............................................................................... 2 Applications Information .............................................................. 19 Specifications..................................................................................... 3 Recommended Bias Sequencing .............................................. 19 0.01 GHz to 1 GHz Frequency Range........................................ 3 Typical Application Circuit ....................................................... 20 1 GHz to 6 GHz Frequency Range ............................................. 3 Evaluation Board ............................................................................ 21 6 GHz to 10 GHz Frequency Range ........................................... 4 Outline Dimensions ....................................................................... 23 Absolute Maximum Ratings ............................................................ 5 Ordering Guide .......................................................................... 23 Thermal Resistance ...................................................................... 5 ESD Caution .................................................................................. 5 REVISION HISTORY 8/2019—Rev. A to Rev. B Changes to Figure 68 ...................................................................... 17 3/2019—Revision 0: Initial Version 5/2019—Rev. 0 to Rev. A Changes to Table 3 ............................................................................ 4 Changes to Theory of Operation Section .................................... 18 Rev. B | Page 2 of 23 Data Sheet HMC8411LP2FE SPECIFICATIONS 0.01 GHz TO 1 GHz FREQUENCY RANGE VDD = 5 V, supply current (IDQ) = 55 mA, and TA = 25°C, unless otherwise noted. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature NOISE FIGURE RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept Symbol Output Second-Order Intercept POWER ADDED EFFICIENCY SUPPLY CURRENT SUPPLY VOLTAGE OIP2 PAE IDQ VDD P1dB PSAT OIP3 Min 0.01 12.5 17 2 Typ Max 1 15.5 0.005 1.8 Unit GHz dB dB/°C dB 22 17 dB dB 20 20.5 33.5 dBm dBm dBm 43 30 55 5 dBm % mA V 6 Test Conditions/Comments Measurement taken at output power (POUT) per tone = 6 dBm Measurement taken at POUT per tone one = 6 dBm Measured at PSAT 1 GHz TO 6 GHz FREQUENCY RANGE VDD = 5 V, IDQ = 55 mA, and TA = 25°C, unless otherwise noted. Table 2. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature NOISE FIGURE RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept Output Second-Order Intercept POWER ADDED EFFICIENCY SUPPLY CURRENT SUPPLY VOLTAGE Symbol P1dB PSAT OIP3 OIP2 PAE IDQ VDD Min 1 12 17 2 Typ Max 6 15 0.01 1.7 Unit GHz dB dB/°C dB 25 18 dB dB 20 21 34 39 34 55 5 dBm dBm dBm dBm % mA V 6 Rev. B | Page 3 of 23 Test Conditions/Comments Measurement taken at POUT per tone = 6 dBm Measurement taken at POUT per tone = 6 dBm Measured at PSAT HMC8411LP2FE Data Sheet 6 GHz TO 10 GHz FREQUENCY RANGE VDD = 5 V, IDQ = 55 mA, and TA = 25°C, unless otherwise noted. Table 3. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature NOISE FIGURE RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept Output Second-Order Intercept POWER ADDED EFFICIENCY SUPPLY CURRENT SUPPLY VOLTAGE Symbol P1dB PSAT OIP3 OIP2 PAE IDQ VDD Min 6 11 13 2 Typ Max 10 14 0.018 2 Unit GHz dB dB/°C dB 15 17 dB dB 16 19.5 33 40 23 55 5 dBm dBm dBm dBm % mA V 6 Rev. B | Page 4 of 23 Test Conditions/Comments Measurement taken at POUT per tone = 6 dBm Measurement taken at POUT per tone = 6 dBm Measured at PSAT Data Sheet HMC8411LP2FE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 4. Parameter1 Drain Bias Voltage (VDD) Radio Frequency Input (RFIN) Power Channel Temperature Continuous Power Dissipation (PDISS), T = 85°C (Derate 12.2 mW/°C Above 85°C) Storage Temperature Range Operating Temperature Range Peak Reflow Temperature Moisture Sensitivity Level 1 (MSL1)2 Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Close attention to PCB thermal design is required. Rating 7V 20 dBm 175°C 1.098 W θJC is the junction to case thermal resistance. Table 5. Thermal Resistance −65°C to +150°C −40°C to +85°C 260°C Package Type CP-6-12 ESD CAUTION 500 V, Class 1B passed When referring to a single function of a multifunction pin in the parameters, only the portion of the pin name that is relevant to the specification is listed. For full pin names of multifunction pins, refer to the Pin Configuration and Function Descriptions section. 2 See the Ordering Guide section for more information. 1 Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. B | Page 5 of 23 θJC 82 Unit °C/W HMC8411LP2FE Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS HMC8411LP2FE TOP VIEW (Not to Scale) RFIN 2 NC 3 6 GND 5 RFOUT/VDD 4 NC NOTES 1. NC = NO CONNECT. THIS PIN IS NOT CONNECTED INTERNALLY. THIS PIN MUST BE CONNECTED TO THE RF AND DC GROUND. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF AND DC GROUND. 15859-002 RBIAS 1 Figure 2. Pin Configuration Table 6. Pin Function Descriptions Pin No. 1 Mnemonic RBIAS 2 3, 4 5 RFIN NC RFOUT/VDD 6 GND EPAD Description Current Mirror Bias Resistor Pin. Use this pin to set the current to the internal resistor by the external resistor. See Figure 3 for the interface schematic. RF Input (RFIN). This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic. No Connect. This pin is not connected internally. This pin must be connected to the RF and dc ground. RF Output (RFOUT). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic. Drain Bias for the Amplifier (VDD). This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic. Ground. This pin must be connected to the RF and dc ground. See Figure 6 for the interface schematic. Exposed Pad. The exposed pad must be connected to RF and dc ground. INTERFACE SCHEMATICS RBIAS 15859-005 15859-006 RFOUT/VDD Figure 3. RBIAS Interface Schematic 15859-003 GND 15859-004 RFIN Figure 5. RFOUT/VDD Interface Schematic Figure 6. GND Interface Schematic Figure 4. RFIN Interface Schematic Rev. B | Page 6 of 23 Data Sheet HMC8411LP2FE 20 20 10 10 RESPONSE (dB) 0 S11 S21 S22 –10 25 50 75 100 125 150 175 200 FREQUENCY (MHz) –30 Figure 7. Gain and Return Loss (Response) vs. Frequency, 10 MHz to 200 MHz, VDD = 5 V, IDQ = 55 mA 0 6 8 10 12 14 16 Figure 10. Broadband Gain and Return Loss (Response) vs. Frequency, 200 MHz to 16 GHz, VDD = 5 V, IDQ = 55 mA 16 16 14 14 GAIN (dB) 18 10 4 FREQUENCY (GHz) 18 12 2 15859-010 0 15859-007 –30 8 12 10 8 +85°C +25°C –40°C 4 0 25 50 75 100 125 150 175 +85°C +25°C –40°C 6 200 FREQUENCY (MHz) 4 15859-008 6 Figure 8. Gain vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 6 8 10 12 Figure 11. Gain vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 16 16 14 14 GAIN (dB) 18 10 4 FREQUENCY (GHz) 18 12 2 15859-011 GAIN (dB) –10 –20 –20 GAIN (dB) S11 S21 S22 0 8 12 10 8 6 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 4 0 2 4 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 6 6 FREQUENCY (GHz) 8 10 12 4 15859-009 2V, 3V, 4V, 5V, 6V, Figure 9. Gain vs. Frequency for Various Supply Voltages and Currents (IDD), RBIAS = 1.1 kΩ 0 2 4 6 FREQUENCY (GHz) 8 10 12 15859-012 RESPONSE (dB) TYPICAL PERFORMANCE CHARACTERISTICS Figure 12. Gain vs. Frequency for Various Bias Resistor Values and IDQ, VDD = 5 V Rev. B | Page 7 of 23 HMC8411LP2FE Data Sheet 0 0 +85°C +25°C –40°C +85°C +25°C –40°C –5 INPUT RETURN LOSS (dB) –10 –15 –15 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) –25 15859-013 –25 0 2 4 6 8 10 Figure 13. Input Return Loss vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA Figure 16. Input Return Loss vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 0 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA –5 INPUT RETURN LOSS (dB) 2V, 3V, 4V, 5V, 6V, –5 –10 –15 –10 –15 0 2 4 6 8 10 12 FREQUENCY (GHz) –25 15859-014 –25 Figure 14. Input Return Loss vs. Frequency for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 0 2 4 6 8 10 12 FREQUENCY (GHz) 15859-017 –20 –20 Figure 17. Input Return Loss vs. Frequency for Various Bias Resistor Values and IDQ, VDD = 5 V 0 0 +85°C +25°C –40°C OUTPUT RETURN LOSS (dB) +85°C +25°C –40°C –5 –10 –15 –20 0 25 50 75 100 125 FREQUENCY (MHz) 150 175 200 15859-015 OUTPUT RETURN LOSS (dB) 12 FREQUENCY (GHz) 15859-016 –20 –20 INPUT RETURN LOSS (dB) –10 Figure 15. Output Return Loss vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA –5 –10 –15 –20 –25 0 2 4 6 FREQUENCY (GHz) 8 10 12 15859-018 INPUT RETURN LOSS (dB) –5 Figure 18. Output Return Loss vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA Rev. B | Page 8 of 23 Data Sheet HMC8411LP2FE 0 = 20mA = 32mA = 44mA = 55mA = 67mA –10 –15 –20 –25 0 2 4 6 8 10 12 FREQUENCY (GHz) 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA –5 –10 –15 –20 –25 0 6 8 10 12 Figure 22. Output Return Loss vs. Frequency for Various Bias Resistor Values and IDQ, VDD = 5 V 0 0 +85°C +25°C –40°C –5 –10 –15 –20 –25 –10 –15 –20 –25 +85°C +25°C –40°C –30 –30 25 50 75 100 125 150 175 200 FREQUENCY (MHz) –35 0 –5 –5 REVERSE ISOLATION (dB) 0 –10 –15 –20 –25 = 20mA = 32mA = 44mA = 55mA = 67mA –35 0 2 4 6 8 10 FREQUENCY (GHz) 12 8 10 12 –10 –15 –20 –25 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA –30 15859-021 –30 6 Figure 23. Reverse Isolation vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 IDD IDD IDD IDD IDD 4 FREQUENCY (GHz) Figure 20. Reverse Isolation vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 2V, 3V, 4V, 5V, 6V, 2 Figure 21. Reverse Isolation vs. Frequency for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ –35 0 2 4 6 8 10 FREQUENCY (GHz) Figure 24. Reverse Isolation vs. Frequency for Various Bias Resistor Values and IDQ, VDD = 5 V Rev. B | Page 9 of 23 12 15859-024 0 15859-020 –35 15859-023 REVERSE ISOLATION (dB) –5 REVERSE ISOLATION (dB) 4 FREQUENCY (GHz) Figure 19. Output Return Loss vs. Frequency for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ REVERSE ISOLATION (dB) 2 15859-022 –5 IDD IDD IDD IDD IDD OUTPUT RETURN LOSS (dB) 2V, 3V, 4V, 5V, 6V, 15859-019 OUTPUT RETURN LOSS (dB) 0 HMC8411LP2FE Data Sheet 6 10 +85°C +25°C –40°C 5 6 4 2 20 40 60 80 100 120 140 160 180 200 2 FREQUENCY (MHz) +85°C +25°C –40°C 0 15859-025 0 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 25. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA Figure 28. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 6 10 2V, 3V, 4V, 5V, 6V, IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 2V, 3V, 4V, 5V, 6V, 5 NOISE FIGURE (dB) 8 6 4 2 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 4 3 2 0 20 40 60 80 100 120 140 160 180 200 FREQUENCY (MHz) 0 15859-026 0 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 26. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 15859-029 1 Figure 29. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 10 6 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 5 NOISE FIGURE (dB) 8 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 6 4 2 4 3 2 0 0 20 40 60 80 100 120 140 160 180 200 FREQUENCY (MHz) 15859-027 1 Figure 27. Noise Figure vs. Frequency, 10 MHz to 200 MHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 0 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 30. Noise Figure vs. Frequency, 200 MHz to 12 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V Rev. B | Page 10 of 23 15859-030 NOISE FIGURE (dB) 3 1 0 NOISE FIGURE (dB) 4 15859-028 NOISE FIGURE (dB) NOISE FIGURE (dB) 8 HMC8411LP2FE 24 24 20 20 P1dB (dBm) 16 12 8 16 12 8 +85°C +25°C –40°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) Figure 31. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 28 24 24 20 20 12 6 8 10 12 16 12 8 4 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 0.8 0.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2V, 3V, 4V, 5V, 6V, 4 1.0 FREQUENCY (GHz) IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 0 15859-032 2V, 3V, 4V, 5V, 6V, 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 32. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 15859-035 8 Figure 35. P1dB vs. Frequency, 1 GHz to 12 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 28 24 24 20 20 P1dB (dBm) 28 16 12 16 12 8 8 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 4 0 0 0.1 0.2 0.3 0.4 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 4 0.5 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1.0 15859-033 P1dB (dBm) 4 Figure 34. P1dB vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 28 16 2 FREQUENCY (GHz) P1dB (dBm) P1dB (dBm) 4 15859-031 4 15859-034 +85°C +25°C –40°C Figure 33. P1dB vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 0 0 2 4 6 8 10 FREQUENCY (GHz) Figure 36. P1dB vs. Frequency, 1 GHz to 12 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V Rev. B | Page 11 of 23 12 15859-036 P1dB (dBm) Data Sheet Data Sheet 24 24 20 20 PSAT (dBm) 16 12 16 12 8 8 +85°C +25°C –40°C 0 0.1 0.2 0.4 0.3 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) Figure 37. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 28 24 24 20 20 12 6 8 10 12 16 12 8 4 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 0.2 0.3 0 0 0.1 2V, 3V, 4V, 5V, 6V, 4 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 0 15859-038 2V, 3V, 4V, 5V, 6V, 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 38. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 15859-041 8 Figure 41. PSAT vs. Frequency, 1 GHz to 12 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 28 24 24 20 20 PSAT (dBm) 28 16 12 16 12 8 8 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 4 0 0 0.1 0.2 0.3 0.4 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 4 0.5 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1.0 15859-039 PSAT (dBm) 4 Figure 40. PSAT vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 28 16 2 FREQUENCY (GHz) PSAT (dBm) PSAT (dBm) 4 15859-037 4 15859-040 +85°C +25°C –40°C Figure 39. PSAT vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 0 0 2 4 6 8 10 FREQUENCY (GHz) Figure 42. PSAT vs. Frequency, 1 GHz to 12 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V Rev. B | Page 12 of 23 12 15859-042 PSAT (dBm) HMC8411LP2FE HMC8411LP2FE 45 45 40 40 35 35 30 30 PAE (%) 25 20 25 20 15 15 10 +85°C +25°C –40°C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) 0 0 10 12 68 6 –6 –2 2 6 10 14 89 24 18 75 12 68 6 54 0 –10 61 54 –6 10 6 2 –2 14 18 INPUT POWER (dBm) Figure 44. POUT, Gain, PAE, and IDD vs. Input Power, Power Compression at 1 GHz, VDD = 5 V, IDQ = 55 mA Figure 47. POUT, Gain, PAE, and IDD vs. Input Power, Power Compression at 5 GHz, VDD = 5 V, IDQ = 55 mA 30 180 25 POUT GAIN PAE I DD GAIN (dB), P1dB (dBm), PSAT (dBm) 89 75 IDD (mA) 82 12 68 6 54 –2 2 6 10 14 18 INPUT POWER (dBm) 15859-045 61 –6 GAIN P1dB PSAT I DD 96 18 IDD (mA) 82 61 18 96 Figure 45. POUT, Gain, PAE, and IDD vs. Input Power, Power Compression at 10 GHz, VDD = 5 V, IDQ = 55 mA 20 160 140 15 120 100 10 80 5 60 40 0 2 3 4 5 6 7 8 SUPPLY VOLTAGE (V) Figure 48. POUT, Gain, PAE, and IDD vs. Supply Voltage, Power Compression at 1 GHz, RBIAS = 1.1 kΩ Rev. B | Page 13 of 23 IDD (mA) 12 30 15859-047 POUT (dBm), GAIN (dB), PAE (%) 75 IDD (mA) 18 15859-044 POUT (dBm), GAIN (dB), PAE (%) 89 INPUT POWER (dBm) POUT (dBm), GAIN (dB), PAE (%) 8 POUT GAIN PAE I DD 96 82 0 –10 6 36 POUT GAIN PAE I DD 24 24 4 Figure 46. PAE vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 36 0 –10 2 FREQUENCY (GHz) Figure 43. PAE vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 30 +85°C +25°C –40°C 5 15859-043 5 15859-046 10 15859-048 PAE (%) Data Sheet HMC8411LP2FE Data Sheet 180 80 GAIN P1dB PSAT I DD 5 60 0 3 4 5 6 8 7 140 15 SUPPLY VOLTAGE (V) 120 100 10 80 GAIN P1dB PSAT I DD 5 40 6 7 8 SUPPLY VOLTAGE (V) Figure 52. POUT, Gain, PAE, and IDD vs. Input Power, Power Compression at 10 GHz, RBIAS = 1.1 kΩ 0.6 75 0.5 60 IM3 (dBc) 0.4 0.3 45 30 0.2 15 10GHz 5GHz 1GHz 0 –10 –6 –2 2 6 10 14 10GHz 5GHz 1GHz 18 INPUT POWER (dBm) 0 0 1 2 3 4 5 6 7 8 POUT PER TONE (dBm) Figure 50. Power Dissipation vs. Input Power at TA = 85°C, VDD = 5 V, IDQ = 55 mA 15859-053 0.1 15859-050 Figure 53. IM3 vs. POUT per Tone for Various Frequencies, VDD = 5 V, IDQ = 55 mA 40 35 35 30 30 OIP3 (dBm) 40 25 20 25 20 15 15 +85°C +25°C –40°C 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1.0 10 15859-051 10 Figure 51. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA +85°C +25°C –40°C 0 2 4 6 FREQUENCY (GHz) 8 10 12 15859-054 POWER DISSIPATION (W) 5 4 3 2 Figure 49. POUT, Gain, PAE, and IDD vs. Input Power, Power Compression at 5 GHz, RBIAS = 1.1 kΩ OIP3 (dBm) 60 0 15859-049 40 2 20 15859-052 100 10 IDD (mA) 140 120 160 GAIN (dB), P1dB (dBm), PSAT (dBm) GAIN (dB), P1dB (dBm), PSAT (dBm) 160 20 15 180 25 IDD (mA) 25 Figure 54. OIP3 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA Rev. B | Page 14 of 23 HMC8411LP2FE 42 42 36 36 30 30 OIP3 (dBm) 24 18 12 24 18 12 = 20mA = 32mA = 44mA = 55mA = 67mA 0.8 0.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2V, 3V, 4V, 5V, 6V, 6 1.0 FREQUENCY (GHz) 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 58. OIP3 vs. Frequency, 1 GHz to 12 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 45 45 40 40 35 35 30 30 OIP3 (dBm) 25 20 25 20 15 15 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 5 5 0 0 0.1 0.2 0.3 0.4 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 10 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) 0 15859-056 10 0 50 45 45 40 40 35 35 OIP2 (dBm) 55 50 30 25 20 15 10 +85°C +25°C –40°C 0.4 0.5 0.6 FREQUENCY (GHz) 0.7 0.8 0.9 1.0 0 15859-057 0.3 12 +85°C +25°C –40°C 5 0 0.2 10 25 15 0.1 8 30 20 0 6 Figure 59. OIP3 vs. Frequency, 1 GHz to 12 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 55 5 4 FREQUENCY (GHz) Figure 56. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 10 2 15859-059 OIP3 (dBm) = 20mA = 32mA = 44mA = 55mA = 67mA 0 Figure 55. OIP3 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ OIP2 (dBm) IDD IDD IDD IDD IDD 15859-058 6 IDD IDD IDD IDD IDD 15859-055 2V, 3V, 4V, 5V, 6V, Figure 57. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA 0 2 4 6 FREQUENCY (GHz) 8 10 12 15859-060 OIP3 (dBm) Data Sheet Figure 60. OIP2 vs. Frequency, 1 GHz to 12 GHz, for Various Temperatures, VDD = 5 V, IDQ = 55 mA Rev. B | Page 15 of 23 Data Sheet 55 55 50 50 45 45 40 40 35 35 OIP2 (dBm) 30 25 30 25 20 20 15 10 5 IDD IDD IDD IDD IDD = 20mA = 32mA = 44mA = 55mA = 67mA 0.8 0.9 5 0 0 0.1 0.2 0.4 0.3 0.5 0.6 0.7 2V, 3V, 4V, 5V, 6V, 10 1.0 FREQUENCY (GHz) 0 = 20mA = 32mA = 44mA = 55mA = 67mA 2 4 6 8 10 12 FREQUENCY (GHz) Figure 61. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ Figure 64. OIP2 vs. Frequency, 1 GHz to 12 GHz, for Various Supply Voltages and IDD, RBIAS = 1.1 kΩ 55 55 50 50 45 45 40 40 35 35 OIP2 (dBm) OIP2 (dBm) IDD IDD IDD IDD IDD 0 15859-061 2V, 3V, 4V, 5V, 6V, 15859-064 15 30 25 30 25 20 20 15 15 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 5 5 0 0 0.1 0.2 0.3 0.4 510Ω, IDQ = 75mA 780Ω, IDQ = 65mA 1.1kΩ, IDQ = 55mA 1.8kΩ, IDQ = 45mA 3.0kΩ, IDQ = 35mA 10 0.5 0.6 0.7 0.8 0.9 1.0 FREQUENCY (GHz) 0 15859-062 10 0 2 4 6 8 10 12 FREQUENCY (GHz) Figure 62. OIP2 vs. Frequency, 0.01 GHz to 1.0 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 15859-065 OIP2 (dBm) HMC8411LP2FE Figure 65. OIP2 vs. Frequency, 1 GHz to 12 GHz, for Various Bias Resistor Values and IDQ, VDD = 5 V 75 –120 65 60 55 50 –10 –6 –2 2 6 10 INPUT POWER (dBm) 14 15859-063 IDD (mA) 70 Figure 63. IDD vs. Input Power for Various Frequencies, VDD = 5 V –130 –140 –150 –160 –170 –180 1k 10k 100k 1M OFFSET FREQUENCY (Hz) Figure 66. Additive Phase Noise vs. Offset Frequency, RF Frequency = 6 GHz, RF Input Power = 0 dBm Rev. B | Page 16 of 23 10M 15859-066 ADDITIVE PHASE NOISE (dBc/Hz) 10GHz 5GHz 1GHz Data Sheet HMC8411LP2FE 125 90 80 100 70 60 IDQ (mA) IDQ (mA) 75 50 25 50 40 30 20 0 0 1 2 3 4 VDD (V) 5 6 7 8 Figure 67. IDQ vs. VDD, Representative of a Typical Device, RBIAS = 1.1 kΩ Rev. B | Page 17 of 23 0 0 2000 4000 6000 8000 BIAS RESISTOR VALUE (Ω) Figure 68. IDQ vs. Bias Resistor Value, VDD = 5 V 10000 15859-068 –25 15859-067 10 HMC8411LP2FE Data Sheet THEORY OF OPERATION The HMC8411LP2FE is a GaAs, MMIC, pHEMT, low noise wideband amplifier. The HMC8411LP2FE is a cascode amplifier that uses a fundamental cell of two field effect transistors (FETs) in series, source to drain. The basic schematic for the cascode cell is shown in Figure 69, which forms a low noise amplifier operating from 0.01 GHz to 10 GHz with excellent noise figure performance. VDD RFOUT The HMC8411LP2FE is a single-supply bias amplifier using an external resistor on the RBIAS pin to set the IDQ current. To adjust the IDQ current, change the RBIAS resistor value. 15859-069 RFIN The HMC8411LP2FE has single-ended input and output ports with impedances that nominally equal 50 Ω over the 0.01 GHz to 10 GHz frequency range. As a result, the device can be directly inserted into a 50 Ω system with external components on the RF input and output, as shown in Figure 70, without narrowbanded matching solutions. There is a need for an external bias choke for VDD on the RFOUT pin followed by a dc blocking capacitor, as well as a dc blocking capacitor on the RFIN port. On the RF input, there is an additional resistor, inductor, and capacitor (RLC) shunt network that aids unconditional stability below 100 MHz. Figure 69. GaAs, MMIC, pHEMT, Low Noise Wideband Amplifier Schematic Rev. B | Page 18 of 23 Data Sheet HMC8411LP2FE APPLICATIONS INFORMATION The basic connections for operating the HMC8411LP2FE are shown in Figure 70. AC couple the input and output of the HMC8411LP2FE with appropriately sized capacitors. DC block capacitors are supplied on the RFIN and RFOUT pin of the evaluation board. A 5 V dc bias is supplied to the amplifier through the choke inductor connected to the RFOUT pin. The HMC8411LP2FE operates in self-bias mode when the RBIAS pin is connected to a 1.1 kΩ external resistor to achieve a 55 mA supply current. Refer to Table 7 for the recommended resistor values to achieve different supply currents. RECOMMENDED BIAS SEQUENCING During Power-Up The recommended bias sequence during power-up follows: 1. 2. Set VDD to 5 V. Apply the RF signal. During Power-Down The recommended bias sequence during power-down follows: 1. 2. Turn off the RF signal. Set VDD to 0 V. The bias conditions, VDD = 5 V and IDQ = 55 mA, are the recommended operating point to achieve optimum performance. The data used in this data sheet was taken with the recommended bias conditions. Using the HMC8411LP2FE with different bias conditions can provide different performance than what is shown in the Typical Performance Characteristics section. Table 7. Recommended Bias Resistor Values RBIAS (Ω) 400 510 635 780 960 1100 1400 1800 2270 3000 4000 5700 9000 IDQ (mA) 80 75 70 65 60 55 50 45 40 35 30 25 20 Amplifier Current, IDQ_AMP (mA) 75.97 71.32 66.64 61.95 57.27 52.47 47.82 43.16 38.45 33.75 29.15 24.93 19.95 Rev. B | Page 19 of 23 RBIAS Current, IDQ_BIAS (mA) 4.03 3.68 3.36 3.05 2.73 2.53 2.18 1.84 1.55 1.25 0.85 0.07 0.05 HMC8411LP2FE Data Sheet TYPICAL APPLICATION CIRCUIT VDD C3 0.1µF C4 10pF GND R1 1.1kΩ HMC8411LP2FE C1 RFIN 10nF L2 590nH 1 6 2 5 3 4 GND L1 0.9µH C2 RFOUT 10nF GND R2 43Ω 15859-070 C11 0.1µF GND Figure 70. Typical Application Circuit Rev. B | Page 20 of 23 Data Sheet HMC8411LP2FE EVALUATION BOARD The EV1HMC8411LP2F evaluation board is a 4-layer board fabricated using Rogers 4350 and using best practices for high frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance. The evaluation board and populated components operate over the −40°C to +85°C ambient temperature range. For proper bias sequence, see the Applications Information section. 15859-071 The evaluation board schematic is shown in Figure 72. A fully populated and tested evaluation board (see Figure 71) is available from Analog Devices upon request. Figure 71. EV1HMC8411LP2F Printed Circuit Board (PCB) VDD C3 0.1µF C4 10pF C14 100pF DNI GND R1 1.1kΩ GND RBIAS C1 10nF RFIN RFIN NC L2 590nH GND GND R2 43Ω 1 6 2 5 3 EPAD 4 L1 0.9µH GND RFOUT/VDD C2 10nF RFOUT NC DUT1 GND GND HMC8411LP2FE 15859-072 C11 0.1µF GND Figure 72. EV1HMC8411LP2F Evaluation Board Schematic Rev. B | Page 21 of 23 HMC8411LP2FE Data Sheet Table 8. Bill of Materials for Evaluation PCB EV1HMC8411LP2F Item RFIN, RFOUT VDD, GND C1, C2 C3 C4 C11 L1 L2 R1 R2 DUT1 Heat sink Description PCB mount SMA RF connectors, SRI 21-146-1000-01 DC bias test points 10 nF broadband dc blocking capacitors, Presidio LBB0201X103MET5C8L Capacitor, 0.1 µF, 0402 package Capacitor, 10 pF, 0201 package Capacitor, 0.1 µF, 0201 package Inductor, 0.9 µH, 0402, 5% ferrite, Coilcraft 0402DF-901XJRW Inductor, 590 nH, 0402, 5% ferrite, Coilcraft 0402DF-591XJRU 1.1 kΩ resistor, 0201 package 43 Ω resistor, 0201 package IC, HMC8411LP2FE Heat sink Rev. B | Page 22 of 23 Data Sheet HMC8411LP2FE OUTLINE DIMENSIONS DETAIL A (JEDEC 95) 1.70 1.60 1.50 2.05 2.00 SQ 1.95 0.65 BSC 5 8 PIN 1 INDEX AREA PKG-005241 SEATING PLANE SIDE VIEW 1 4 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.35 0.30 0.25 P IN 1 IN D IC ATO R AR E A OP T IO N S (SEE DETAIL A) BOTTOM VIEW 1.30 REF FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 0.203 REF 08-17-2018-A 0.30 0.25 0.20 TOP VIEW 0.90 0.85 0.80 1.10 1.00 0.90 EXPOSED PAD Figure 73. 6-Lead Lead Frame Chip Scale Package [LFCSP], 2 mm × 2 mm Body and 0.85 mm Package Height (CP-6-12) Dimensions shown in millimeters ORDERING GUIDE Model 1, 2 HMC8411LP2FE HMC8411LP2FETR EV1HMC8411LP2F Temperature Range −40°C to +85°C −40°C to +85°C MSL Rating 3 MSL1 MSL1 Package Description 4 6-Lead Lead Frame Chip Scale Package [LFCSP] 6-Lead Lead Frame Chip Scale Package [LFCSP] Evaluation Board The HMC8411LP2FE and HMC8411LP2FETR are RoHS compliant parts. When ordering the evaluation board only, reference the model number, EV1HMC8411LP2F. 3 See the Absolute Maximum Ratings section for additional information. 4 The lead finish of the HMC8411LP2FE and HMC8411LP2FETR is nickel palladium gold (NiPdAu). 1 2 ©2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D15859-0-8/19(B) Rev. B | Page 23 of 23 Package Option CP-6-12 CP-6-12