HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
The HMC930 is ideal for:
High P1dB Output Power: 22 dBm
• Test Instrumentation
High Psat Output Power: 24 dBm
• Microwave Radio & VSAT
High Gain: 13 dB
• Military & Space
High Output IP3: 33.5 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 175 mA
• Fiber Optics
50 Ohm Matched Input/Output
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Features
Die Size: 2.82 x 1.50 x 0.1 mm
Functional Diagram
General Description
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The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 13 dB of gain,
33.5 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC930 exhibits a slightly
positive gain slope from 8 to 32 GHz, making it
ideal for EW, ECM, Radar and test equipment
applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA*
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Amplifiers - Linear & Power - Chip
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Typical Applications
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
DC - 12
11.5
13.5
Typ.
Max.
Min.
12 - 32
11
13
10
Typ.
Max.
Units
32 - 40
GHz
12
dB
Gain Flatness
±0.5
±0.3
±1.0
dB
Gain Variation Over Temperature
0.01
0.017
0.032
dB/ °C
dB
Input Return Loss
18
16
15
Output Return Loss
28
20
20
dB
20
dBm
23
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
21
23
20
22
25
24
18
Output Third Order Intercept (IP3)
36
33.5
29
dBm
Noise Figure
4.5
5
7.5
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
175
175
mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Gain & Return Loss
Gain vs. Temperature
20
18
16
-10
-20
12
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10
-30
+25C
+85C
-55C
8
-40
0
5
10
15
20
25
30
35
40
45
6
50
0
FREQUENCY (GHz)
4
8
12
20
24
28
32
36
40
44
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Output Return Loss vs. Temperature
0
0
-20
-30
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-10
-10
+25C
+85C
-55C
-20
-30
+25C
+85C
-55C
-40
0
4
8
12
16
20
24
28
32
36
40
-40
0
44
4
8
12
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10
28
32
36
28
32
40
44
+25C
+85C
-55C
NOISE FIGURE(dB)
8
S21
S11
S22
-20
-30
6
4
2
-40
-50
0.00001
24
10
20
-10
20
Noise Figure vs. Temperature
Low Frequency Gain & Return Loss
0
16
FREQUENCY (GHz)
FREQUENCY (GHz)
RESPONSE (dB)
16
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
3
14
GAIN (dB)
0
Amplifiers - Linear & Power - Chip
S21
S11
S22
RETURN LOSS (dB)
RESPONSE (dB)
10
0
0.0001
0.001
0.01
0.1
FREQUENCY (GHz)
1
10
0
4
8
12
16
20
24
36
40
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-2
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
P1dB vs. Supply Voltage
P1dB vs. Temperature
28
28
+25C
+85C
-55C
26
P1dB (dBm)
24
22
24
22
20
TE
20
+8V
+10V
+11V
18
18
16
16
0
4
8
12
16
20
24
28
32
36
40
0
44
4
8
12
16
20
24
28
32
36
40
44
FREQUENCY (GHz)
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FREQUENCY (GHz)
Psat vs. Temperature
Psat vs. Supply Voltage
30
30
+25C
+85C
-55C
28
24
22
20
18
0
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26
4
8
12
16
20
24
28
32
36
40
Psat (dBm)
28
Psat (dBm)
26
24
22
+8V
+10V
+11V
20
18
44
0
4
8
12
FREQUENCY (GHz)
P1dB vs. Supply Current
16
20
24
28
32
36
40
44
32
36
40
44
FREQUENCY (GHz)
Psat vs. Supply Current
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Amplifiers - Linear & Power - Chip
3
P1dB (dBm)
26
28
28
26
26
22
Psat (dBm)
P1dB (dBm)
24
20
18
24
22
125 mA
175 mA
20
16
125 mA
175 mA
14
18
16
12
0
4
8
12
16
20
24
28
FREQUENCY (GHz)
3-3
32
36
40
44
0
4
8
12
16
20
24
28
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Output IP3 vs.
Supply Voltage @ Pout = 14 dBm / Tone
38
38
36
36
34
34
32
30
28
+8V
+10V
+11V
28
26
26
24
24
0
4
8
12
16
20
24
28
32
36
40
0
44
4
8
12
20
24
28
32
36
40
44
40
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Output IP3 vs.
Supply Currents @ Pout = 14 dBm / Tone
Output IM3 @ Vdd = +8V
80
38
125 mA
175 mA
36
70
60
32
30
28
26
24
22
20
0
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34
4
8
12
16
20
24
28
32
36
40
50
40
30
20
2 GHz
8 GHz
14 GHz
20 GHz
10
0
2
4
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80
70
70
60
60
50
50
IM3 (dBc)
80
40
30
2 GHz
8 GHz
14 GHz
20 GHz
10
6
8
10
12
14
16
14
16
Pout/TONE (dBm)
Output IM3 @ Vdd = +11V
Output IM3 @ Vdd = +10V
20
28 GHz
34 GHz
40 GHz
0
44
FREQUENCY (GHz)
IM3 (dBc)
16
FREQUENCY (GHz)
FREQUENCY (GHz)
IP3 (dBm)
30
TE
+25C
+85C
-55C
3
32
40
30
20
28 GHz
34 GHz
40 GHz
2 GHz
8 GHz
14 GHz
20 GHz
10
0
Amplifiers - Linear & Power - Chip
40
IP3 (dBm)
40
IM3 (dBc)
IP3 (dBm)
Output IP3 vs.
Temperature @ Pout = 14 dBm / Tone
28 GHz
34 GHz
40 GHz
0
0
2
4
6
8
10
Pout/TONE (dBm)
12
14
16
0
2
4
6
8
10
12
Pout/TONE (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-4
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Power Compression @ 20 GHz
Reverse Isolation vs. Temperature
32
+25C
+85C
-55C
-30
-40
-50
28
Pout
Gain
PAE
24
20
16
12
TE
ISOLATION (dB)
-20
-60
-70
-80
8
4
0
0
4
8
12
16
20
24
28
32
36
40
44
0
125
B
SO
10
12
15
Gain & Power vs. Supply Voltage @ 20 GHz
Gain (dB), P1dB (dBm), Psat (dBm)
Gain
P1dB
Psat
30
15
9
35
35
20
6
INPUT POWER (dBm)
Gain & Power vs. Supply Current @ 20 GHz
25
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FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm)
135
145
155
165
30
Gain
P1dB
Psat
25
20
15
10
8
175
9
Idd (mA)
10
11
Vdd (V)
Power Dissipation
3
POWER DISSIPATION (W)
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Amplifiers - Linear & Power - Chip
3
Pout (dBm), GAIN (dB), PAE (%)
0
-10
2
4 GHz
10 GHz
20 GHz
30 GHz
40 GHz
1
0
0
3
6
9
12
15
INPUT POWER (dBm)
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Second Harmonics vs. Temperature @ Pout =
14 dBm, Vdd = 10V & Vgg = 3.5V, 175mA
Second Harmonics vs.
Vdd @ Pout = 14 dBm, Idd = 175mA [1]
70
+25C
+85C
-40C
50
40
30
3
+8V
+10V
+11V
50
40
30
20
TE
20
60
10
10
0
0
0
4
8
12
16
20
0
24
4
8
12
16
20
24
FREQUENCY(GHz)
FREQUENCY(GHz)
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Second Harmonics vs. Pout
Vdd = 10V & Vgg = 3.5V & Idd = 175mA
+4 dBm
+6 dBm
+8 dBm
+10 dBm
+12 dBm
+14 dBm
60
50
40
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SECOND HARMONIC (dBc)
70
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
12V
Output Power into VSWR >7:1
24 dBm
-3 to 0 Vdc
Storage Temperature
-65 to 150 °C
For Vdd = 12V, Vgg2 = 5.5V
Idd >145mA
Operating Temperature
-55 to 85 °C
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) up to 4.5V
For Vdd < 8.5V,
Vgg2 must remain > 2V
RF Input Power (RFIN)
17 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
2.1 W
Thermal Resistance
(channel to die bottom)
Amplifiers - Linear & Power - Chip
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
70
31.1 °C/W
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+9
175
+10
175
+11
175
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-6
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Outline Drawing
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Die Packaging Information
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Amplifiers - Linear & Power - Chip
3
[1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3-7
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Pad Descriptions
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
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GND
Die bottom must be connected to RF/DC ground.
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Die Bottom
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3
Amplifiers - Linear & Power - Chip
Function
TE
Pad Number
3-8
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Assembly Diagram
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Application Circuit
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Amplifiers - Linear & Power - Chip
3
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC930
v00.0610
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Wire Bond
0.076mm
(0.003”)
TE
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
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Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
Figure 1.
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Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
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The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
3
Amplifiers - Linear & Power - Chip
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3 - 10
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