HMC952
v02.0813
Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Typical Applications
Features
The HMC952 is ideal for:
+35 dBm Pout @ 28% PAE
• Point-to-Point Radios
High Output IP3: +42 dBm
• Point-to-Multi-Point Radios
High Gain: 36 dB
• SATCOM
DC Supply: +6V @ 1400 mA
No External Matching Required
Die Size: 3.46 x 1.73 x 0.1 mm
Functional Diagram
General Description
The HMC952 is a four-stage GaAs pHEMT MMIC 2
Watt Power Amplifier with an integrated temperature
compensated on-chip Power Detector which operates
between 9 and 14 GHz. The HMC952 provides 36 dB
of gain and +35 dBm of saturated output power at 28%
PAE from a +6V power supply. The HMC952 exhibits
excellent linearity and is optimized for high capacity
Point-to-Point and Point-to-Multi-Point Radio systems.
The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
preceding the antenna. All data is taken with the chip
in a 50 Ohm test fixture connected via (2) 0.025 mm
(1 mil) diameter wire bonds of 0.31mm (12 mil) length.
Electrical Specifications, TA = +25° C,
Vdd1, Vdd2, Vdd3, Vdd4, Vdd5= +6V, Idd = 1400 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
9 - 10
34
Units
GHz
dB
0.04
0.04
dB/ °C
Input Return Loss
12
16
dB
Output Return Loss
8
12
dB
34.5
dBm
Output Power for 1 dB Compression (P1dB)
31
34
33
Max.
36
Gain Variation Over Temperature
37
Typ.
10 - 14
31.5
Saturated Output Power (Psat)
35
35
dBm
Output Third Order Intercept (IP3)[2]
41
42.5
dBm
1400
1400
mA
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Measurement taken at Pout / Tone = +20 dBm
1
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One
Technology
P.O. Box 9106, Norwood, MA 02062-9106
Phone:
Fax:
978-250-3373
Order
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its use. Specifications subject
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without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
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Trademarks and registered trademarks are
the property of their
respective owners.
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
45
30
40
20
35
S21
S11
S22
10
0
+25C
+85C
-55C
25
-10
20
-20
-30
15
8
9
10
11
12
13
FREQUENCY (GHz)
14
15
16
9
10
12
13
14
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-55C
RETURN LOSS (dB)
-10
-5
-15
-20
-25
-10
-15
+25C
+85C
-55C
-20
-25
-30
-35
-30
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
12
13
14
13
14
P1dB vs. Supply Voltage [1]
38
38
36
36
P1dB (dBm)
34
+25C
+85C
-55C
32
11
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
11
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
30
Amplifiers - Linear & Power - Chip
Gain vs. Temperature
40
GAIN (dB)
RESPONSE (dB)
Broadband Gain &
Return Loss vs. Frequency
34
32
30
30
28
28
26
5V
6V
7V
26
9
10
11
12
13
14
FREQUENCY (GHz)
9
10
11
12
FREQUENCY (GHz)
[1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA.
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One
Technology
P.O. Box 9106, Norwood, MA 02062-9106
Phone:
Fax:
978-250-3373
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
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Trademarks and registered trademarks are
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2
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
38
38
36
36
34
34
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage [1]
+25C
+85C
-55C
32
32
30
30
28
28
26
5V
6V
7V
26
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
36
36
34
34
Psat(dBm)
38
32
1000 mA
1100 mA
1200 mA
1300 mA
1400 mA
13
14
13
14
1000 mA
1100 mA
1200mA
1300mA
1400mA
32
30
28
28
26
26
9
10
11
12
13
14
9
10
FREQUENCY (GHz)
12
Output IP3 vs.
Supply Current, Pout/Tone = +20 dBm
46
44
44
42
42
40
40
IP3 (dBm)
46
38
+25C
+85C
-55C
36
11
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +20 dBm
IP3 (dBm)
12
Psat vs. Supply Current (Idd)
38
30
11
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
P1dB (dBm)
Amplifiers - Linear & Power - Chip
Psat vs. Temperature
38
34
34
32
32
30
1000 mA
1100 mA
1200 mA
1300 mA
1400 mA
36
30
9
10
11
12
13
14
FREQUENCY (GHz)
9
10
11
12
13
14
FREQUENCY (GHz)
[1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA.
3
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reliable. However,Corporation,
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For price,
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One
Technology
P.O. Box 9106, Norwood, MA 02062-9106
Phone:
Fax:
978-250-3373
Order
On-lineWay,
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rights of third parties that may
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its use. Specifications subject
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without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
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Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
80
44
70
42
60
40
50
38
36
5V
6V
7V
34
40
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
30
20
32
10
30
0
9
10
11
12
13
14
10
12
14
FREQUENCY (GHz)
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
80
70
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
30
20
18
20
22
24
20
22
24
Output IM3 @ Vdd = +7V [2]
80
40
16
Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
40
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
30
20
10
10
0
0
10
12
14
16
18
20
22
24
10
12
14
Pout/TONE (dBm)
18
Power Compression @ 9.5 GHz
10
6
4
2
40
3200
35
2800
30
2400
25
2000
20
1600
1200
15
Idd
10
800
Pout
Gain
PAE
5
400
0
0
0
9
10
11
12
13
14
FREQUENCY (GHz)
-20
Idd (mA)
Pout (dBm), Gain (dB), PAE (%)
+25C
+85C
-55C
8
16
Pout/TONE (dBm)
Noise Figure vs Temperature
NOISE FIGURE (dB)
Amplifiers - Linear & Power - Chip
Output IM3 @ Vdd = +5V
46
IM3 (dBc)
IP3 (dBm)
Output IP3 vs.
Supply Voltage, Pout/Tone = +20 dBm [1]
-15
-10
-5
0
5
INPUT POWER (dBm)
[1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA.
[2] 7V plot taken at Idd= 1200 mA.
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and Microwave
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no
For price,
delivery
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01824
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orders: AnalogMA
Devices,
Inc.,
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One
Technology
P.O. Box 9106, Norwood, MA 02062-9106
Phone:
Fax:
978-250-3373
Order
On-lineWay,
at www.hittite.com
rights of third parties that may
result from978-250-3343
its use. Specifications subject
to change
without notice. No
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support:
Phone: 978-250-3343
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Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
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respective owners.
4
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Power Compression @ 13.5 GHz
40
3200
35
2800
35
2800
30
2400
30
2400
25
2000
25
2000
20
1600
20
1600
1200
15
Idd
10
800
Pout
Gain
PAE
5
400
Pout (dBm), Gain (dB), PAE (%)
Pout (dBm), Gain (dB), PAE (%)
3200
0
0
-20
-15
-10
-5
0
Idd
10
5
-15
-10
-5
0
-10
+25C
+85C
-55C
-20
ISOLATION (dB)
1
Vref-Vdet (V)
5
Reverse Isolation vs. Temperature
10
0.1
10 GHz +25C
10 GHz +85C
10 GHz -40C
12 GHz +25C
12 GHz +85C
12 GHz -40C
0.01
-6
-2
2
6
10
14
18
22
26
30
-30
-40
-50
-60
-70
-80
-90
34
11
OUTPUT POWER (dBm)
12
13
14
15
16
17
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 11.5 GHz
40
40
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
0
INPUT POWER (dBm)
Detector Voltage vs. Frequency &
Temperature
36
32
GAIN
P1dB
Psat
28
24
20
1000
400
0
-20
INPUT POWER (dBm)
0.001
-10
800
Pout
Gain
PAE
0
5
Gain & Power vs.
Supply Current @ 11.5 GHz
36
32
GAIN
P1dB
Psat
28
24
20
1050
1100
1150
1200
Idd (mA)
5
1200
15
Idd (mA)
40
Idd (mA)
Amplifiers - Linear & Power - Chip
Power Compression @ 11.5 GHz
1250
1300
1350
1400
5
5.2
5.4
5.6
5.8
6
Vdd (V)
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One
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P.O. Box 9106, Norwood, MA 02062-9106
Phone:
Fax:
978-250-3373
Order
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Trademarks and registered trademarks are
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HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Power Dissipation
10
8
6
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
14 GHz
4
2
0
-15
-12
-9
-6
-3
0
3
6
INPUT POWER (dBm)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8V
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
-3 ~ 0 Vdc
+5.0
1400
RF Input Power (RFIN)
+24 dBm
+6.0
1400
Channel Temperature
150 °C
+7.0
1200
Continuous Pdiss (T= 85 °C)
(derate 133 mW/°C above 85 °C)
8.6 W
Thermal Resistance
(channel to die bottom)
7.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD sensitivity (HBM)
Class 0, Passed 150V
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 1400 mA at +6V. Vgg
adjusted to achieve Idd = 1200 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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Amplifiers - Linear & Power - Chip
POWER DISSIPATION (W)
12
6
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .0032” SQUARE
4. TYPICAL RF BOND PAD IS .0039 X .0076”
5. BACKSIDE METALLIZATION: GOLD
6. BOND PAD METALLIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
9. Overall die size ± .002”
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7
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Trademarks and registered trademarks are
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HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2 - 5, 9
Vdd1, Vdd2, Vdd3,
Vdd4, Vdd5
Drain bias voltage for amplifier. External bypas capacitors
of 100pF, 10nF, and 4.7uF are required.
6
RFOUT
This pad is DC coupled and matched to 50 Ohms.
7
Vdet
DC voltage representing RF output power rectified by diode
which is biased through an external resistor. See application circuit.
8
Vref
DC bias of diode biased through external resistor, used for
temperature compensation of Vdet. See application circuit
10 - 12
Vgg3, Vgg2, Vgg1
Gate control for amplifier. External bypass capacitors of
100pF and 100nF are required
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
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Amplifiers - Linear & Power - Chip
Pad Number
8
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Application Circuit
9
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HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Assembly Diagram
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10
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible
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