HMC998
v01.0811
Amplifiers - Linear & Power - Chip
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Typical Applications
Features
The HMC998 is ideal for:
High P1dB Output Power: +31 dBm
• Test Instrumentation
High Psat Output Power: +33 dBm
• Microwave Radio & VSAT
High Gain: 12 dB
• Military & Space
High Output IP3: +41 dBm
• Telecom Infrastructure
Supply Voltage: Vdd = +10V to +15V @ 500 mA
• Fiber Optics
50 Ohm Matched Input/Output
Die Size: 2.99 x 1.84 x 0.1 mm
Functional Diagram
General Description
The HMC998 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 GHz. The amplifier provides 12 dB of gain,
+41 dBm output IP3 and +31 dBm of output power at
1 dB gain compression while requiring 500 mA from
a +15V supply. This versatile PA exhibits a positive
gain slope from 1 to 18 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC998 amplifier I/Os are internally matched to
50 Ohms facilitating integration into mutli-chipmodules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA*
Parameter
Min.
9.5
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Max.
Min.
0.1 - 2
Frequency Range
Gain
Typ.
29
11.5
Typ.
Max.
Min.
2 - 18
10.5
12.5
10.5
Typ.
Max.
Units
18 - 22
GHz
12.5
dB
±0.1
±0.7
±0.6
dB
0.006
0.11
0.016
dB/ °C
-20
-20
-15
dB
-7
-20
-20
dB
30
dBm
31
29
31.5
27
Saturated Output Power (Psat)
33
33.5
33
dBm
Output Third Order Intercept (IP3)
41
41
40
dBm
Noise Figure
10
4
5
dB
500
500
500
mA
Supply Current
(Idd) (Vdd= 15V, Vgg1= -0.7V Typ.)
* Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical.
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Gain & Return Loss
Gain vs. Temperature
20
16
S21
S11
S22
0
14
GAIN (dB)
RESPONSE (dB)
10
-10
12
10
-20
+25C
+85C
-55C
8
-30
6
0
5
10
15
20
25
30
0
2
4
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
12
14
16
18
20
22
0
+25C
+85C
-55C
-10
+25C
+85C
-55C
-10
RESPONSE (dB)
RETURN LOSS (dB)
10
Output Return Loss vs. Temperature
0
-20
-20
-30
-30
-40
-40
0
2
4
6
8
10
12
14
16
18
20
0
22
4
8
16
20
24
Noise Figure vs. Frequency
Low Frequency Gain & Return Loss
10
20
9
10
NOISE FIGURE (dB)
8
0
S21
S11
S22
-10
-20
-30
+25C
+85C
-55C
7
6
5
4
3
2
-40
-50
0.0001
12
FREQUENCY (GHz)
FREQUENCY (GHz)
RESPONSE (dB)
8
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
18
1
0.001
0.01
0.1
FREQUENCY (GHz)
1
10
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
2
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
P1dB vs. Temperature
Psat vs. Temperature
36
+25C
+85C
-55C
34
32
Psat (dBm)
P1dB (dBm)
34
30
30
28
26
26
+25C
+85C
-55C
24
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
10
12
14
16
18
20
22
16
18
20
22
16
18
20
22
Psat vs. Vdd
P1dB vs. Vdd
36
36
10V
12V
14V
15V
34
34
Psat (dBm)
32
30
32
30
28
28
26
26
24
10V
12V
14V
15V
24
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
10
12
14
Output IP3 vs. Vdd
@ Pout = 18 dBm Tone
50
50
45
45
40
40
35
+25C
+85C
-55C
30
8
FREQUENCY (GHz)
IP3 (dBm)
IP3 (dBm)
8
FREQUENCY (GHz)
Output IP3 vs. Temperature
@ Pout = 18 dBm Tone
35
10V
12V
14V
15V
30
25
25
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
3
32
28
24
P1dB (dBm)
Amplifiers - Linear & Power - Chip
36
16
18
20
22
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Output IP3 vs. Output Power @ 11 GHz
Power Compression @ 4 GHz
45
IP3 (dBm)
Pout (dBm), GAIN (dB), PAE (%)
400 mA
450 mA
500 mA
40
35
30
Pout
Gain
PAE
30
25
20
15
10
5
0
25
10
12
14
16
18
20
0
22
5
Power Compression @ 10 GHz
20
25
20
25
35
Pout
Gain
PAE
30
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
15
Power Compression @ 20 GHz
35
25
20
15
10
5
0
Pout
Gain
PAE
30
25
20
15
10
5
0
0
5
10
15
20
25
0
5
INPUT POWER (dBm)
10
60
SECOND HARMONIC (dBc)
70
8
6
Max Pdis @ 85C
2 GHz
10 GHz
20 GHz
2
15
Second Harmonics vs.
Temperature @ Pout = 18 dBm
12
4
10
INPUT POWER (dBm)
Power Dissipation
POWER DISSIPATION (W)
10
INPUT POWER (dBm)
OUTPUT POWER (dBm)
Amplifiers - Linear & Power - Chip
35
50
+25C
+85C
-55C
50
40
30
20
10
0
0
0
2
4
6
8
10
12
14
INPUT POWER (dBm)
16
18
20
22
0
4
8
12
16
20
24
FREQUENCY(GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
4
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Second Harmonics vs.
Vdd @ Pout = 18 dBm
Second Harmonics vs. Pout
70
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
+12V
+14V
+15V
50
40
30
20
10
0
50
40
30
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
20
0
0
4
8
12
16
20
24
0
4
8
FREQUENCY(GHz)
12
16
20
24
FREQUENCY(GHz)
Reverse Isolation vs Temperature
0
-10
+25C
+85C
-55C
-20
-30
-40
-50
-60
-70
-80
0
4
8
12
16
20
24
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
5
60
10
ISOLATION (dB)
Amplifiers - Linear & Power - Chip
70
+17 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V)
RF Input Power (RFIN)
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 129 mW/°C above 85
°C)
8.4 W
Thermal Resistance
(channel to die bottom)
7.73 °C/W
Output Power into VSWR >7:1
+32 dBm
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+12
500
+14
500
+15
500
Vgg1 adjust to achieve Idd = 500 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] For more information refer to the “Packaging
Information” Document in the Product Support Section of
our website .
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. TYPICAL BOND PAD IS 0.004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±0.002”
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
Amplifiers - Linear & Power - Chip
Outline Drawing
6
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Amplifiers - Linear & Power - Chip
Pad Descriptions
7
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2
VGG2
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +9.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass
capacitor per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Application Circuit
Amplifiers - Linear & Power - Chip
Assembly Diagram
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 800mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, 2delivery,
and to
placeChelmsford,
orders: Analog MA
Devices,
Inc.,
For price,
delivery
and
to place
orders:
Microwave
Corporation,
Elizabeth
Drive,
01824
responsibility
is assumed
by Analog
Devices
for its use,
nor for anyHittite
infringements
of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373 Phone:
Order781-329-4700
On-line at www.hittite.com
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application
Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are
the property of their
respective owners.
Application
Support:
Phone: 978-250-3343
or apps@hittite.com
8
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible
工商网监
湘ICP备2023018690号
